提高193nm ArF Stepper分辨率的几种技术

193nm ArF Stepper是量产90nm芯片的主流光刻机。在此基础上。综合采用浸入式光刻技术和增大数值孔径NA技术等。已制造出193nm ArF浸入式光刻机．它将是量产65／45nm芯片的主流光刻机。     

新世纪光刻技术及光刻设备的发展趋势

本文主要阐述了光刻技术的发展极限及193nm,157nm光学光刻技术和电子束投影光刻（SCALPEL）、X－射线光刻（XRL）离子投影光刻（IPL）等技术的发展趋势。并详细介绍了国际著名品牌的光刻机以及即将推出的新一代光刻机。对国内光刻设备的发展现状作了简要概述。     

193nm浸入式光刻技术独树一帜

介绍了193nm浸入式光刻机和193nm光刻胶的最新发展动态以及下一代193nm浸入式光刻机。     

自动投影光刻机

直接在硅片上分步重复曝光的自动投影光刻机，是目前１Ｍ、４ＭＤＲＡ及更高集成度各种超大规模集成电路生产的主流光刻工具，本文简要介绍深圳丰德微电子有限公司以引进，消化，吸收与单元技术相结合的方式，进行１微米实用线宽自动投影光刻机的研制及工艺衫化试验的情况，开发如何与集成电路生产，研究相结合。促进共同扫展等谈一些体会和看法。     

193nm光刻技术延伸方法

介绍了提高193nm光刻分辨力的方法,如浸入式光刻技术、相位移技术等。并介绍了193nm浸入式光刻机的优点和前景。     

浸没式光刻技术的研究进展

浸没式光刻技术是将某种液体充满投影物镜最后一个透镜的下表面与硅片之间来增加系统的数值孔径,可以将193nm光刻延伸到45nm节点以下。阐述了浸没式光刻技术的原理,讨论了液体浸没带来的问题,最后介绍了浸没式光刻机的研发进展。     

光学光刻的现状及未来

简要概述了光学光刻的现状、目前典型光刻机的技术水平、以及即将推出的新一代光刻机，并总结光学光刻的发展趋势。     

从特征尺寸的缩小看光刻技术的发展

从特征尺寸不断缩小变化的角度阐述了近代光刻技术发展的历程。指出90nm节点的主流光刻技术是193nmArF光刻;193nm浸入式光刻技术作为65nm和45nm节点的首选光刻技术,如果配合二次曝光技术,还可以扩展到32nm节点的应用,但成本会增加;如果特征尺寸缩小到22nm和16nm节点,EUV光刻、无掩模光刻以及纳米压印光刻等将成为未来发展的重要研究方向。在对各种光刻技术的原理、特点以及优缺点等分析对比的基础上,对未来主流光刻技术的发展做了一定的展望。     

第二届尼康中国研讨会成功召开

协会与尼康公司3月19日召开了第二届尼康中国研讨会。研讨会上,协会领导和尼康公司资深专家就集成电路产业发展、已商用40—45nm量产的液浸式光刻机、Cuttingedge、Double patterning、EUVL等未来光刻技术,以及最新型i线光刻机虾155和尼康二手设备情况作了研讨。     

ASML公司光学光刻技术最新进展

荷兰ASML公司作为全球三大光刻机集成生产商之一，通过不断的技术创新，在全球光刻机市场上居于领先地位。在简单介绍光刻机基本工作原理和主要技术指标的基础上，详细分析了ASML公司在光学光刻技术方面的最新技术进展。     

光源掩模协同优化的原理与应用

当半导体技术节点缩小至14 nm及以下时,光刻技术也逐渐接近了其物理极限.光源掩模协同优化(SMO)作为一种新型的分辨率增强技术,能够显著提升极限尺寸下半导体光刻的重叠工艺窗口,有效延伸当前常规光刻技术的生存周期.综述了SMO这一技术,分析了SMO的原理,介绍了该技术的发展和在半导体制造工艺中的应用,重点探讨了其在先进光刻节点研发中的应用,并对其挑战和发展趋势进行了展望,认为SMO不仅是193 nm浸润式光刻技术的重要组成部分,也将是EUV光刻中必不可少的一种技术.     

193nm光刻投影物镜单镜支撑仿真分析及实验研究

光刻是大规模集成电路制造过程中最为关键的工艺,光刻的分辨力主要取决于光刻投影物镜的光学性能。光刻投影物镜光学元件面形精度为纳米量级,其对光学元件的加工及物镜单镜支撑提出了极高的要求。为193nm光刻投影物镜高精度的单镜面形,设计了一种运动学单镜支撑结构。运用有限元法(FEM)分析光刻投影物镜单镜运动学支撑结构在重力下物镜镜片的面形变化量,经分析物镜镜片的峰值(PV)值为15.46nm,均方根(RMS)误差为3.62nm。为了验证有限元计算精度,建立了可去除参考面面形及被测面原始面形的方法。经过分析对比,仿真结果与实验结果面形的PV值为2.356nm,RMS误差为0.357nm。研究结果表明,所设计的基于运动学193nm光刻投影物镜单镜支撑结构能够满足193nm光刻投影物镜系统对于物镜机械支撑结构的要求。     

Self-Healing Lithographic Patterning of Perovskite Nanocrystals for Large-Area Single-Mode Laser Array

Lead halide perovskites exhibit extraordinary optoelectronic performances and are being considered as a promising medium for high-quality photonic devices such as single-mode lasers. However, for perovskite-based single-mode lasers to become practical, fabrication and integration on a chip via the standard top-down lithography process are strongly desired. The chief bottleneck to achieving lithography of perovskites lies in their reactivity to chemicals used for lithography as illustrated by issues of instability, surface roughness, and internal defects with the fabricated structures. The realization of lithographic perovskite single-mode lasers in large areas remains a challenge. In this work, a self-healing lithographic patterning technique using perovskite CsPbBr₃ nanocrystals is demonstrated to realize high-quality and high-crystallinity single-mode laser arrays. The self-healing process is compatible with the standard lithography process and greatly improves the quality of lithographic laser cavities. A single-mode microdisk laser array is demonstrated with a low threshold of 3.8 µJ cm⁻². Moreover, the control of the lasing wavelength is made possible over a range of up to 6.4 nm by precise fabrication of the laser cavities. This work presents a general and promising strategy for standard top-down lithography fabrication of high-quality perovskite devices and enables research on large-area perovskite-based integrated optoelectronic circuits.     

POLYMETHYLMETHACRYLATE LANGMUIR-BLODGETT FILMS FOR HIGH RESOLUTION ELECTRON BEAM RESIST

Ultra-thin (20-100nm) polymethylmethacrylate(PMMA) films prepared by Langmuir-Blodgett techniques have been explored as high resolution electron beam resists. A Hitachi S-450 Scanning Electron Microscope (SEM) has been refitted for a high resolution electron beam exposure system. The lithographic properties and exposure conditions of LB PMMA films were investigated. 0.15μm lines-and-spaces patterns were achieved by using the SEM as the exposure tool. The results demonstrate that the etch resistance of such films is sufficiently good to allow patterning of a 20 nm aluminum film suitable for mask fabrication.     

聚甲基丙烯酸甲酯LB膜用作高分辨率电子束抗蚀层的研究

应用LB技术制备了厚度为20100nm的聚甲基丙烯酸甲酯(PMMA)超薄高分辨率电子束抗蚀层。应用改装的日立S-450扫描电子显微镜(SEM),研究了PMMALB膜的曝光特性和刻蚀条件。结果得到线宽0.15m的铝掩模光栅图形,表明此种超薄膜具有良好的分辨率和足够的抗蚀性。     

Soft Lithography of Ceramic Patterns

Polymer‐based precursor solutions are patterned using a soft‐lithographic patterning technique to yield sub‐micrometer‐sized ceramic patterns. By using a polymer–metal‐nitrate solution as a lithographic resist, we demonstrate a micromolding procedure using a simple rubber stamp that yields a patterned precursor layer. A subsequent high‐temperature annealing step degrades the polymer giving rise to a patterned metal oxide film. This procedure is demonstrated for three different ceramic materials: Al₂O₃, ZnO, and PbTiO₃. Al₂O₃ initially forms an amorphous phase that is subsequently converted into a polycrystalline material upon electron irradiation. The formed ZnO and PbTiO₃ are polycrystalline. PbTiO₃ exhibits epitaxial alignment when cast onto a SrTiO₃(001) surface that matches its lattice periodicity. This epitaxial alignment is maintained when the PbTiO₃ phase is patterned by micromolding, giving rise to epitaxially grown PbTiO₃ patterns with feature sizes down to 300 nm.     

Green Lithography for Delicate Materials

A variety of unconventional materials, including biological nanostructures, organic and hybrid semiconductors, as well as monolayer, and other low-dimensional systems, are actively explored. They are usually incompatible with standard lithographic techniques that use harsh organic solvents and other detrimental processing. Here, a new class of green and gentle lithographic resists, compatible with delicate materials and capable of both top-down and bottom-up fabrication routines is developed. To demonstrate the excellence of this approach, devices with sub-micron features are fabricated on organic semiconductor crystals and individual animal's brain microtubules. Such structures are created for the first time, thanks to the genuinely water-based lithography, which opens an avenue for the thorough research of unconventional delicate materials at the nanoscale.     

激光光刻大面积扫描投影成像光学系统测试及评价

基于351nm XeF激光大面积投影成像光刻系统,通过对其光学系统包括光学照明系统和折叠投影系统进行光学性能测试。由激光经过柱面透镜、微透镜阵列均束器以及投影折叠物镜之后产生的能量及光束质量变化,将准分子激光光束均匀性评价指标部分运用到光学系统的评价之中,得到光学系统在不同关键位置的能量分布曲线以及平顶因子关系图,表明微透镜阵列均束器虽保证了整个光学系统各处光斑的均匀性,但衍射却造成了能量利用率的降低。同时,通过对印制电路板(PCB)和玻璃(ITO)进行曝光和显影实验,表明该双远心共焦投影光学系统,只要控制使均匀输出的能量符合曝光剂量,就能够满足分辨率的要求。     

基于光刻模型的动态自适应切分OPC

光学邻近校正(OPC)技术已经成为纳米级半导体工艺技术中的一个关键.目前在OPC中多边形的切分算法均基于配方(recipe),但随着特征线宽减小及版图越来越复杂,用于切分的配方难以覆盖所有的情况;不完备的配方引发或加剧了芯片上的纹波、断线和桥连等现象.论文提出了一种新的基于光刻模型的动态自适应切分算法,根据不同的光刻模型和几何环境可以给出不同的切分,并且可在校正循环中动态改变切分方式和采样点的放置位置.通过90nm工艺下版图设计的验证,这种切分不仅减少了被切分出的小线段(segment)数量的10%～15%,节省了调试切分规则的时间,而且提高了 OPC的质量,使PRV(post RET verification)错误率降低了35%.