Dielectric and impedance characteristics of Ba(Bi0.5Nb0.5)O3 ceramics

A lead free polycrystalline material Ba(Bi_0.5Nb_0.5)O₃ was prepared using a high-temperature mixed oxide technique using high purity ingredients. The formation of the material in monoclinic crystal structure was confirmed by an X-ray structural analysis at room temperature. The nature and texture of microstructure by scanning electron microscopy show that the compound has well defined grains uniformly distributed throughout the surface of the sample. Detailed studies of dielectric and impedance properties of the material, carried out in the frequency range of (1 kHz–1 MHz) at different temperatures (30 °C to 475 °C), have shown many interesting properties. Dielectric study showed an existence of diffuse phase transition around 317 °C. The temperature dependence of impedance parameters (impedance, modulus etc.) of the material exhibits a strong correlation of its micro-structure (i.e., bulk, grain boundary, etc.) with the electrical parameters. An existence of negative temperature coefficient of resistance (NTCR) type behavior in the material similar to that of semiconductors was also observed. The complex electric modulus analysis indicates the existence of hopping conduction mechanism in the system with non-exponential type of conductivity relaxation. The nature of variation of dc conductivity with temperature confirms the Arrhenius behavior of the material. The ac conductivity spectra show a typical signature of an ionic conducting system, and are found to obey Jonscher’s universal power law. The temperature dependent pre-exponential factor (A) shows peak and frequency exponent (n) possesses a minimum at transition temperature.     

Dielectric and electrical properties of 0.5(BiGd0.05Fe0.95O3)-0.5(PbZrO3) composite

The 0.5(BiGd_0.05Fe_0.95O₃)-0.5(PbZrO₃) composite was synthesized by means of a high temperature solid-state reaction technique using high purity ingredients. Preliminary X-ray structural analysis confirms the formation of the composite. The dielectric constant and loss tangent have been studied. The impedance parameters have been measured using an impedance analyzer in a wide range of frequency (10²–10⁶ Hz) at different temperatures. The Nyquist plot suggests the contribution of bulk effect only and the bulk resistance decreases with a rise in temperature. Electrical impedance confirms the presence of grain effect and hopping mechanism in the electrical transport of the material. The dc conductivity increases with a rise of temperature. The frequency variation of ac conductivity shows that the compound obeys Jonscher’s universal power law and from Jonscher’s power law fit confirms the Small Polaron (SP) tunneling effect. Temperature dependence of dc and ac conductivity indicates that electrical conduction in the material is a thermally activated process.     

Investigation of density of states and electrical properties of Ba<Subscript>0.5</Subscript>Co<Subscript>0.5</Subscript>Bi<Subscript>2</Subscript>Nb<Subscript>2</Subscript>O<Subscript>9</Subscript> nanoceramics prepared by chemical route

Barium-cobalt-bismuth-niobate, Ba_0.5Co_0.5Bi₂Nb₂O₉ (BCoBN) nanocrystalline ferroelectric ceramic was prepared through chemical route. XRD analysis showed single phase layered perovskite structure of BCoBN when calcined at 650 °C, 2 h. The average crystallite size was found to be 18 nm. The microstructure was studied through scanning electron microscopy. The dielectric and ferroelectric properties were investigated in the temperature range 50–500 °C. The dielectric constant and dielectric loss plot with respect to temperature both indicated strong relaxor behavior. Frequency versus complex impedance plot also supported the relaxor properties of the material. The impedance spectroscopy study showed only grain conductivity. Variation of ac conductivity study exhibited Arrhenius type of electrical conductivity where the hopping frequency shifted towards higher frequency region with increasing temperature. The ac conductivity values were used to evaluate the density of state at the Fermi level. The minimum hopping distance was found to be decreased with increasing temperature.     

Structural,electrical and magneto-electric characteristics of complex multiferroic perovskite Bi<Subscript>0.5</Subscript>Pb<Subscript>0.5</Subscript>Fe<Subscript>0.5</Subscript>Ce<Subscript>0.5</Subscript>O<Subscript>3</Subscript>

The polycrystalline sample of bismuth based-complex multiferroic of a composition Bi_0.5Pb_0.5Fe_0.5Ce_0.5O₃ was prepared by a high-temperature solid-state reaction technique (calcinations temperature = 900 °C, sintering temperature = 960 °C, time = 4 h). Preliminary structural analysis using XRD data exhibits the formation of a single-phase compound. Studies of surface morphology of the ceramic sample of the compound, recorded at room temperature using a scanning electron microscope, show uniform distribution of grains of different size with few voids. Detailed studies of dielectric properties (ε_r, tan δ) supported the existence of multiferroic properties in the above complex system. The analysis of impedance parameters, recorded in a wide frequency (1 kHz–1 MHz) and temperature (room temperature to 450 °C) range of the material provide better understanding of (a) role of grains and grain boundaries in resistive and capacitative characteristics, (c) structure-properties relationship and (b) type of relaxation process occurred in the material. Study of temperature dependence of dc conductivity of the compound shows the existence of negative temperature coefficient of resistance in it. The nature of variation of ac conductivity with temperature of the material follows the Josher’s universal power law. Study of magneto-electric characteristics of the sample at room temperature has provided many useful and new data on magneto-electric coupling coefficient of different orders.     

Structural,dielectric and impedance spectroscopy studies of (Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>)(Zr<Subscript>0.025</Subscript>Ti<Subscript>0.975</Subscript>)O<Subscript>3</Subscript> ceramic

Structural, vibrational, dielectric and electrical properties of (Na_0.5Bi_0.5)(Zr_0.025Ti_0.975)O₃ ceramic synthesized by the solid-state reaction technique have been carried out. The X-ray diffraction analysis was indicated as a pure perovskite phase in the rhombohedral structure. The modes of rhombohedral vibrations were appeared in the experimental Raman spectrum at room temperature. The dielectric and electrical properties of the material were investigated by impedance spectroscopy analysis for a broad range of temperatures (50–560 °C) and frequency domain of 10²?10⁶ Hz. The dielectric measurement exhibit two phase transitions: a ferro-antiferroelectric transition followed by an antiferro-paraelectric transition at higher temperatures. Complex impedance analysis was carried out in order to distinct the contribution of the grains and the grain boundaries to the total electrical conduction. The Nyquist plot was proved to be a non-Debye relaxation mechanism. The combined spectroscopic plots of the imaginary part of electric impedance and modulus confirmed the non-Debye type behavior. The frequency dependent ac conductivity obeys the double power law behavior and shows three types of conduction process. The significant decrease of dc conductivity spectrum followed the Arrhenius relationship. The values of calculated activation energy of the compound implied that the electrical conduction is mostly due the high oxygen mobility.     

Semiconductor to Metallic Phase Transition in Nickel Doped Co0.5Ni X Fe(0.5−X) Fe2O4

Co_0.5Ni _X Fe_(0.5?X) Fe₂O₄ of composition (X=0.1 to 0.5) has been prepared by sol gel auto combustion citrate nitrate method. The molar ratio of metal nitrates to citric acid was maintained as 1:3 to obtain the small crystallite size. A systematic study of XRD, impedance, ac conductivity and dielectric studies of the samples were carried out in the present work. A semiconducting to metallic changeover accompanied by the grain boundary effect gradually replaced by grain contribution has been found from the impedance analysis. Confirmation of phase transition is also obtained from ac conductivity and dielectric analysis of activation energy graph where the slope changes from negative to positive. Nickel doped cobalt ferrite exhibits a semiconducting nature up to 513 K for all the compositions and underwent to metallic phase above 513 K. It is attributed to cation distribution between A and B sites as a function of temperature.     

Structural,Thermal, and Electrical Study of Bi0.5Sr0.5MnO3

Solid oxide fuel cell (SOFC) is considered as a potential candidate for clean and efficient alternate energy source. Efforts are being made to reduce their operating temperature for SOFCs commercialization. However, the reduction in operating temperature increases the polarization effect in the existing cathodes. In the present study, Bi_0.5Sr_0.5MnO₃ was synthesized and studied for its structural, thermal, and electrical properties. Bi_0.5Sr_0.5MnO₃ was synthesized by conventional solid state reaction method. The as-prepared sample was characterized by x-ray diffraction, scanning electron microscope, thermogravimetric analysis, dilatometer and impedance spectroscopy. The Rietveld refinement results confirm that Bi_0.50Sr_0.50MnO₃ shows the tetragonal symmetry with p4 mm space group. Scanning electron microscopy study shows that the distribution of grains is uniform and the grains are well connected to each other due to better sinterability of the samples. The dilatometric curve shows linear behavior up to 600°C and after that becomes steeper. This can be due to the loss of lattice oxygen at higher temperatures and creation of oxygen vacancies. The thermal expansion coefficient of the system is ～8.9 × 10^?6 °C^?1 and total conductivity of the sample is ～4.78 × 10^?3 S/cm.     

Dielectric and impedance study of lead-free ceramic: (Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>)ZrO<Subscript>3</Subscript>

Polycrystalline sample of (Na_0.5Bi_0.5)ZrO₃ was prepared using a high-temperature solid-state reaction technique. XRD analysis indicated the formation of a single-phase orthorhombic structure. Dielectric study revealed the diffuse phase transition at 425 °C. AC impedance plots were used as tools to analyse the electrical behaviour of the sample as a function of frequency at different temperatures. The ac impedance studies revealed the presence of grain boundary effect at and above 350 °C. Complex impedance analysis indicated non-Debye type dielectric relaxation and negative temperature coefficient of resistance (NTCR) character of (Na_0.5Bi_0.5)ZrO₃. AC conductivity data were used to evaluate the density of states at Fermi level and activation energy of the compound. DC electrical and thermal conductivities of grain and grain boundary have been assessed.     

Dielectric and impedance spectroscopy of Sr(Bi0.5Ta0.5)O3 electroceramics

Polycrystalline sample of Sr(Bi_0.5Ta_0.5)O₃ was prepared by a high-temperature solid-state reaction technique. Preliminary X-ray diffraction analysis confirms the formation of single-phase compound of orthorhombic crystal structure at room temperature. The study of microstructure of gold-coated pellet by scanning electron microscopy shows well-defined and homogeneous distribution of grains on the surface of the sample. The dielectric properties of the compound studied in a wide frequency range (1 kHz–1 MHz) at different temperatures (27–500 °C), exhibits that they are temperature dependent. Detailed analysis of impedance spectra showed that the electric properties of the material are strongly dependent on frequency and temperature. Studies of electric modulus show the presence of hopping conduction mechanism in the material with non-exponential type of relaxation. The decrease in value of bulk resistance on increasing temperature suggests the negative temperature co-efficient of resistance behavior of the material. The AC-conductivity spectrum provides a typical-signature of an ionic conducting system, and is found to obey Jonscher’s universal power law.     

Investigation of charge transport mechanism in semiconducting La<Subscript>0.5</Subscript>Ca<Subscript>0.5</Subscript>Mn<Subscript>0.5</Subscript>Fe<Subscript>0.5</Subscript>O<Subscript>3</Subscript> manganite prepared by sol–gel method

Here in, we report the charge transport mechanism in semiconducting La_0.5Ca_0.5Mn_0.5Fe_0.5O₃ (LCMFO) polycrystalline material synthesized via sol–gel auto combustion route. X-ray diffraction (XRD) analysis confirmed the orthorhombic phase of the prepared material. Temperature dependent resistivity and impedance spectroscopy measurements have been carried out to probe the dielectric and electrical conduction mechanism which revealed a change of Mott variable range to the small polaronic hopping conduction mechanism around 303 K. The complex impedance and modulus spectra undoubtedly showed the contribution of both grain and grain boundary effect on the conduction properties of LCMFO. An equivalent circuit [(R_gbQ_gb) (R_gQ_g)] model has been used to address the electrical parameters associated with the different phases (grains and grain boundaries) having different relaxation times. The values of resistances of two phases obtained after fitting the equivalent circuit in the nyquist plot have been analyzed which confirmed the change of conduction mechanism around 303 K. The resultant change in conduction mechanism is also supported by the conductivity plots.     

Dielectric and impedance properties of LiCa2Nb5O15 ceramics

Polycrystalline sample of LiCa₂Nb₅O₁₅ was prepared by a high-temperature solid-state reaction technique. Structural and microstructural characterizations were performed by X-ray diffraction (XRD) and scanning electron microscope (SEM). X-ray studies reveal that the material has orthorhombic structure at room temperature. Electrical properties of the material have been studied using a complex impedance spectroscopy (CIS) technique in a wide temperature (31–500 °C) and frequency (10²–10⁶ Hz) ranges. The complex impedance plots reveal the main contribution of bulk effects in it. The bulk resistance, evaluated from complex impedance spectrum, has been observed to decrease with rise in temperature showing a typical negative temperature coefficient of resistance (NTCR) behavior. Variation of dc conductivity (bulk) with temperature demonstrates that the compound exhibits Arrhenius type of electrical conductivity.     

Structural, dielectric and electrical properties of Li2Pb2La2W2Ti4Nb4O30 ceramic

Li₂Pb₂La₂W₂Ti₄Nb₄O₃₀ complex ferroelectric oxide was prepared by using a high-temperature solid-state reaction method (calcination temperature, ~1100 °C and sintering temperature, ~1150 °C). Room temperature preliminary structural analysis shows formation of a single-phase compound. The nature of microstructure (i.e. grain distribution, presence of voids, grain size, etc) recorded using scanning electron microscope (SEM) clearly suggests the formation of high quality and density of pellet samples. Studies of temperature dependence of dielectric constant, tangent loss and polarization show the existence of ferroelectric phase transition in the material at high temperature (307 °C). Detailed studies of temperature dependence of electrical parameters (i.e. impedance (400?475 °C), modulus, conductivity, etc) of the material clearly suggest a strong correlation between its microstructure (i.e. bulk, grain boundary, etc) and electrical properties. The nature of temperature variation of d.c. conductivity showed an Arrhenius behaviour of the material. A signature of ionic conductivity in the material was observed in its a.c. conductivity spectrum. The nature of frequency dependence of a.c. conductivity of the material can be explained by Jonscher’s universal power law. Electrical transport properties of the material show existence of non-exponential type of conductivity relaxation.     

Heat capacity, thermopower and magnetoresistance effects in multiferroic La0.5Bi0.5Mn0.5Fe0.5O3

We have carried out systematic investigations in perovskite multiferroic La_0.5Bi_0.5Mn_0.5Fe_0.5O₃ by means of X-ray diffraction, magnetisation, electrical resistivity, thermoelectric and heat capacity measurements. The magnetic behaviour of this composition is rather complex, though the magnetisation curve seems to be like a weak ferromagnetic material. However, there is no clear evidence of λ-anomaly in the heat capacity data down to 2 K, yet this behaviour corroborate the trends of semiconducting silicon below room temperature. The sensitivity of magnetic behaviour to the iron-manganese ratio is also demonstrated. In presence of an external field of 7 T, it exhibits a magnetoresistance of ?5 % at 130 K. The thermoelectric value increases linearly with decreasing temperature, and at room temperature the value is +85 μV/K, which is associated with the p-type polaronic conductivity.     

Electrical and crystallographic properties of nanocrystalline CdSe<Subscript>0.5</Subscript>S<Subscript>0.5</Subscript> composite thin films deposited by dip method

A dip method is employed for the deposition of CdSe_0.5S_0.5 composite thin film at room temperature. Cadmium sulphate, thiourea and sodium selenosulphate were used as the basic source material. Solid solution with cubic phase was observed from X-ray diffraction studies. The specific conductivity of the film was found to be in order of 10⁻⁷ (Ωcm)⁻¹. The temperature dependence of an electrical conductivity, thermoelectrical power, carrier density and carrier mobility for CdSe_0.5S_0.5 thin films have been examined. The low temperature conductivity is governed by a variable range of conduction while grain boundary limited conduction mechanism is predominant at higher temperature.     

Electrical and dielectric properties of bismuth holmium cobalt titanate (BiHoCoTiO<Subscript>6</Subscript>): a complex double perovskite

A lead-free bismuth holmium cobalt titanate multiferroic(BiHoCoTiO₆) was synthesized at high temperatures by a solid-state reaction (a mixed oxide) route. Structural analysis of the compound is performed using X-ray diffraction data and an orthorhombic crystal system is suggested for the material. Study of room temperature scanning electron microigrapgh exhibited better morphology for the material. The uniform distribution of the small rod-type of grains with dimension of 1–2 µm length and 0.2–0.3 µm diameters was visible. Analysis of temperature-frequency dielectric data exhibited two dielectric anomalies or phase transitions: first transition temperature(t_c1) at 175?°C and the second one at 325?^°C. Study of frequency and temperature dependence of resistive characteristics (performed using complex impedance spectroscopy) has shown significant contributions of grains and grain boundaries, which in turn, helps in understanding the electrical conduction mechanism and microstructure behaviour of the material in a better way. The impedance or Nyquist plots were modelled with an equivalent circuit containing capacitance, resistance and related parameters due to grain (bulk), grain boundaries and capacitance. The transport properties, AC conductivity and electrical modulus of the material were also investigated and reported here.     

Dielectric,humidity behavior and conductivity mechanism of Mn<Subscript>0.2</Subscript>Ni<Subscript>0.3</Subscript>Zn<Subscript>0.5</Subscript>Fe<Subscript>2</Subscript>O<Subscript>4</Subscript> ferrite prepared by co-precipitation method

Mn–Ni–Zn ferrite with the chemical formula of Mn_0.2Ni_0.3Zn_0.5Fe₂O₄ was prepared by co-precipitation method. The X-ray diffraction (XRD) results show that the prepared sample crystallizes in the cubic spinel structure with the space group of Fm3m. The morphological analysis of the sample was investigated by scanning electron microscopy (SEM). The dielectric properties of Mn_0.2Ni_0.3Zn_0.5Fe₂O₄ ferrite were studied in a frequency range from 20 Hz to 10 MHz and at a temperature range from 293 to 733 K. The dielectric constant decreases with the increasing frequency for all the temperature values chosen. The AC conductivity mechanism was found the small polaron type of conductivity, and in addition to that, the DC conductivity can be explained by Arrhenius type conductivity. According to the dielectric results, relaxation process fits Cole–Cole model. Finally, the effect of the relative humidity upon the impedance of the sample was discussed for a frequency range between 20 Hz and 10 MHz. It is found that the impedance values decrease almost linearly with the increasing % RH (relative humidity) values at low frequencies, while the impedance of the sample is independent of % RH at high frequencies.     

Longitudinal conductivity of LaF3/SrF2 multilayer heterostructures

LaF₃/SrF₂ multilayer heterostructures with thicknesses of individual layers in the range 5–100 nm have been grown on MgO(100) substrates using molecular beam epitaxy. The longitudinal conductivity of the films has been measured using impedance spectroscopy in the frequency range 10^?1–10⁶ Hz and a temperature range 300–570 K. The ionic DC conductivities have been determined from Nyquist impedance diagrams and activation energies from the Arrhenius–Frenkel equation. An increase of the DC conductivity has been observed to accompany decreased layer thickness for various thicknesses as small as 25 nm. The greatest conductivity has been shown for a multilayer heterostructure having thicknesses of 25 nm per layer. The structure has a conductivity two orders of magnitude greater than pure LaF₃ bulk material. The increasing conductivity can be understood as a redistribution of charge carriers through the interface due to differing chemical potentials of the materials, by strong lattice-constant mismatch, and/or by formation of a solid La_1-xSr_xF_3-x solution at the interface during the growth process.     

The Influence of Annealing Temperature on the Magnetic Properties of Mn0.5Co0.5Fe2O4 Nanoferrites Synthesized via Mechanical Milling Method

Mn_0.5Co_0.5Fe₂O₄ nanosized ferrites have been made directly from MnFe₂O₄ and CoFe₂O₄ ferrites and from metal oxides by using high-energy ball milling. Single-phase formation and microstructure of the as-milled samples and samples annealed at 100, 200, 300, 400 and 500 ^°C under argon atmosphere were studied using powder X-ray diffraction (XRD) and transmission electron microscopy (TEM). The average grain sizes were estimated from XRD measurements and found to be between 7 and 11 nm. The microstrain for each sample was relieved by annealing due to crystallite growth. Room temperature magnetic properties were investigated by zero-field ⁵⁷Fe Mössbauer spectroscopy and vibrating sample magnetometer (VSM). Saturation magnetizations of the samples were estimated using the empirical law of approach to saturation. The variation of coercive field, saturation magnetization, maximum magnetization and remanent magnetization for each sample was found to depend on the annealing temperature. The coercive fields are observed to increase with increased annealing temperature (from about 300 Oe for the as-milled samples to about 1000 Oe for samples annealed at 500 ^°C) which we attribute to increases in grain sizes.     

Synthesis and Superconductivity of New BiS2 Based Superconductor PrO0.5F0.5BiS2

We report synthesis and superconductivity at 3.7 K in PrO_0.5F_0.5BiS₂. The newly discovered material belongs to the layered sulfide based REO_0.5F_0.5BiS₂ compounds having a ZrCuSiAs-type structure. The bulk polycrystalline compound is synthesized by the vacuum encapsulation technique at 780 ^°C in a single step. Detailed structural analysis has shown that the as synthesized PrO_0.5F_0.5BiS₂ is crystallized in a tetragonal P4/nmm space group with lattice parameters a=4.015(5) Å, c=13.362(4) Å. Bulk superconductivity is observed in PrO_0.5F_0.5BiS₂ below 4 K from magnetic and transport measurements. Electrical transport measurements showed superconducting transition temperature (T _c ) onset at 3.7 K and T _c (ρ=0) at 3.1 K. The hump at T _c related to the superconducting transition is not observed in the heat capacity measurement and rather a Schottky-type anomaly is observed at below ～6 K. The compound is slightly semiconducting in a normal state. Isothermal magnetization (MH) exhibited typical type II behavior with a lower critical field (H _c1) of around 8 Oe.     

Structural and impedance properties of KBa2V5O15 ceramics

The polycrystalline sample of KBa₂V₅O₁₅ ceramics was prepared by a mixed oxide method at low temperature (i.e., at 560 °C). The formation of the compound was confirmed using an X-ray diffraction technique at room temperature. Scanning electron micrograph of the material showed uniform grain distribution on the surface of the sample. Detailed studies of dielectric properties of the compound as a function of temperature at different frequencies suggest that the compound has a dielectric anomaly of ferroelectric to paraelectric type at 323 °C, and exhibits diffuse phase transition. Electrical properties of the material were analyzed using a complex impedance technique. The Nyquists plot showed the presence of both grain (>10³ Hz) and the grain boundary (<10³ Hz) effects in the material. Studies of electrical conductivity over a wide temperature range suggest that the compound exhibits the negative temperature coefficient of resistance behavior. The ac conductivity spectrum was found to obey Jonscher's universal power law.