Growth of ultra-nanocrystailine diamond thin films based on liquid source containing fullerenes

通过微波等离子体化学气相沉积技术(MWPCVD),以富勒烯(C60)甲苯饱和溶液为碳源,用载气携带的方式通入反应腔中生长金刚石膜.Raman光谱、SEM和AFM表征结果表明得到的超纳米晶金刚石薄膜相组成纯度较高,其平均晶粒尺寸约为15nm,表面粗糙度为16.56nm,薄膜平均生长速率约为0.6 μm/h.此方法较其他以C60为碳源生长超纳米晶金刚石薄膜的方法更为简便,且容易控制富勒烯碳源的浓度,沉积速率更高,是一种新型的制备超纳米晶金刚石薄膜的可控工艺方法.     

基于富勒烯液态源的超纳米晶金刚石薄膜生长

通过微波等离子体化学气相沉积技术(MWPCVD),以富勒烯(C60)甲苯饱和溶液为碳源,用载气携带的方式通入反应腔中生长金刚石膜。Raman光谱、SEM和AFM表征结果表明得到的超纳米晶金刚石薄膜相组成纯度较高,其平均晶粒尺寸约为15 nm,表面粗糙度为16.56 nm,薄膜平均生长速率约为0.6μm/h。此方法较其他以C60为碳源生长超纳米晶金刚石薄膜的方法更为简便,且容易控制富勒烯碳源的浓度,沉积速率更高,是一种新型的制备超纳米晶金刚石薄膜的可控工艺方法。     

氨气对热阴极CVD法制备纳米金刚石膜的影响

采用直流热阴级化学气相沉积(DC—PACVD)方法,以NH3 +CH4 +H2混合气体作为气源,通过改变氨气浓度,在单晶硅(111)基片上沉积纳米金刚石膜.采用扫描电子显微镜、原子力显微镜和拉曼光谱仪分析了不同氨气浓度下制备的纳米金刚石膜.结果表明:在基体温度为700℃条件下,随着氨气浓度的增大,纳米金刚石膜中的金刚石相含量增加,非金刚石相含量相对减少;晶粒的平均粒度减小.在一定范围内氨气浓度增加,有助于提高纳米金刚石膜质量;在氨气流量达到8 mL/min时,获得了质量最好的纳米金刚石膜,其平均晶粒尺寸约为64 nm、均方根粗糙度约为27.4 nm.并提出了掺氮纳米金刚石薄膜的生长模型,对相应现象给出了解释.     

液态源雾化化学沉积法制备(Pb,La)TiO3薄膜

研究了在Pt/Ti/SiO2 /Si基片上用液态源雾化化学沉积法制备镧钛酸铅 [(Pb ,La)TiO3,PLT]薄膜的工艺 ,并分析了各种因素对其相结构的影响。采用金属有机物热分解工艺的先体溶液 ,在沉积阶段 ,用超声波将先体溶液雾化 ,产生微米级的汽雾 ,由载气 (Ar)引入沉积室进行沉积 ,并在沉积室进行预热处理。重复上述过程 ,直到膜厚达到要求 ,再进行退火处理得到均匀、致密的薄膜。此工艺各项参数如下 :沉积前沉积室内气压为 4× 10 - 3Pa ;沉积时沉积室内气压为 8× 10 3～ 9× 10 3Pa ,沉积时基片温度为 2 0～ 2 5℃ ;预处理温度为 30 0℃ ;最佳热处理温度为 60 0℃ ;超声雾化器工作频率为 1.7MHz;薄膜沉积速率为 3nm/min。XRD和SEM图分析说明 ,制备的铁电薄膜具有钙钛矿结构     

碳化钨纳米晶薄膜电极在对硝基苯酚电化学还原中的催化性能

采用磁控溅射物理气相沉积和等离子体增强化学气相沉积技术,在金属镍基体上制备具有纳米晶结构的碳化钨薄膜;采用循环伏安、准稳态极化和恒电位阶跃等电化学方法研究了对硝基苯酚(PNP)在碳化钨纳米晶薄膜电极上电化学还原的特性和机理.研究表明,采用磁控溅射物理气相沉积技术制备得到的薄膜是由直径为20nm的WC1-X构成,在这种薄膜电极上,PNP电化学还原在电位为(0.95V(Vs. SCE)时,出现一个电流密度为6.0mA(cm(2还原峰,还原反应的表观活化能为12.0kJ(mol(1;而采用等离子体增强化学气相沉积技术制备得到的薄膜是由直径为35nm的纯相WC构成,PNP在该薄膜电极上电化学还原峰电位为(1.05 V(Vs. SCE),还原电流达10.0 mA(cm(2,表观活化能为10.9 kJ(mol(1. PNP在这两种碳化钨薄膜电极上都经过两步不可逆的电化学反应还原成对氨基苯酚,控制步骤为电极反应的电荷传递过程.     

铜基板法制备纳米碳纤维薄膜的研究

以乙炔(C2H2)作为碳源,采用化学气相沉积法(CVD)在经过草酸溶液腐蚀的铜基板表面制备出纳米碳纤维薄膜。采用扫描电子显微镜(SEM)和X射线粉末衍射仪(XRD)对产物进行结构与形貌表征,并对碳纤维薄膜进行其在基板上的附着性测试。结果表明,草酸腐蚀时间、化学气相沉积反应时间的变化等因素对纳米碳纤维薄膜的生长与形貌有一定影响。在反应温度为350℃时,铜基板表面制备出了一层均匀的纳米碳纤维薄膜,纤维直径为300~400 nm,薄膜的厚度为20~30μm。制备的纳米碳纤维薄膜对基板有良好的附着性。     

生长时间对纳米金刚石薄膜微结构的影响

文章研究了不同沉积时间下制备的不同厚度纳米金刚石薄膜的微观结构和相组成。采用热丝化学气相沉积法分别制备了沉积时间为52、67、97和127min的纳米金刚石薄膜。采用扫描电子显微镜和拉曼光谱表征薄膜的微观结构和相组成。结果表明,纳米金刚石薄膜表面颗粒尺寸大小无明显变化,约为50nm。随着生长时间增加,金刚石相含量保持稳定没有明显的增加或减小趋势,石墨相有序度以及石墨团簇尺寸随着生长时间增加而增加。     

Au修饰的全纳米颗粒自组装SnO2/TiO2薄膜及其DSSCs阻挡层应用

采用硼氢化钠还原金盐溶液,制备了晶粒尺寸为5 nm的金溶胶,以静电吸附的方法将Au纳米晶均匀地沉积在FTO玻璃基全纳米颗粒组装的SnO2/TiO2薄膜内,用SEM、EDS、TEM、光电流密度等方法对金修饰的全纳米颗粒组装SnO2/TiO2薄膜(Au-SnO2/TiO2)进行了表征.金纳米晶修饰后,光电流密度较相同厚度的SnO2/TiO2薄膜提高了128.3％,更加有利于光生电子的迁移.将Au-SnO2/TiO2薄膜用作染料敏化太阳能电池(Dye-sensitized solarcells,DSSCs)的阻挡层后,发现复合薄膜有效地阻止了导电玻璃基底上光生电子与电解液中I3-的复合,提高了DSSCs的光电转换效率.不同厚度的Au-SnO2/TiO2阻挡层复合薄膜中,含6层Au-SnO2/TiO2复合薄膜阻挡层的DSSCs最终效率为7.12％,较常用的TiCl4稀溶液预处理FTO玻璃的工艺(6.06％)提高了17.5％.     

新型模板法制备ZnO纳米结构薄膜及其光学性能研究

通过电化学阳极氧化-化学溶蚀技术制备了一种由无数纳米凸点和凹点所构成的新型铝基纳米点阵模板.采用直流反应磁控溅射法在这种新型模板上沉积得到氧化锌纳米结构薄膜.在室温下观察了氧化锌纳米结构薄膜的形貌,测定材料的晶体结构和光致发光(PL)性能,并讨论了不同溅射时间下制备的氧化锌纳米阵列结构以及其对氧化锌PL谱的性能影响.结果表明,采用直流反应磁控溅射-铝基纳米点阵模板可以制备ZnO纳米结构薄膜;PL谱表明溅射时间为10 min得到的氧化锌薄膜在396.5 nm和506.4 nm处分别出现紫外发射峰和蓝绿色荧光发射峰;随着溅射时间延长,氧化锌薄膜PL谱伴有红移现象且强度逐渐增强.这可能是由于改善了晶粒结构导致不能观测到ZnO薄膜的深能级发射峰所致.     

硒化银薄膜-氧化锰纳米颗粒自组装薄膜电阻转变特性的研究

采用热分解法制备粒径约为30 nm的单分散氧化锰纳米颗粒,然后通过浸渍提拉法将这些纳米颗粒在铂底电极上自组装成氧化锰薄膜,接着利用热蒸镀工艺沉积硒化银薄膜,最后利用磁控溅射工艺沉积钛顶电极,获得具有Ti/Ag₂Se/MnO/Pt结构的阻变存储器。该器件表现出双极性电阻转变特性,并且具有良好的循环特性和数据保持特性,表明Ti/Ag₂Se/MnO/Pt阻变存储器在非易失性存储器件中具有潜在的应用前景。     

Effect of Deposition Temperature on the Growth of Yttria-Stabilized Zirconia Thin Films on Si(111) by Chemical Vapor Deposition

An experimental study was made on the effect of deposition temperature on the growth of yttria-stabilized zirconia (YSZ) thin films in the chemical vapor deposition (CVD) process. The YSZ thin films were obtained in a temperature range of 650°–850°C, using β-diketone chelates and a Si(111) substrate. Dense and mirrorlike YSZ films with uniform thickness were prepared; the deposition rate was 12–20 nm/min at those temperatures. An examination of the crystalline structure of the YSZ films was made, and the appropriate temperature for the growth of c -axis-oriented YSZ thin films using a Si(111) substrate was determined. The quality of the YSZ films was strongly dependent on the deposition temperature. As the temperature increased, the film growth mechanism changed from being controlled by surface reaction to being controlled by gas-phase diffusion.     

三维有序二氧化硅胶粒膜在垂直基片上的自组装

A method for preparation of particle crystal film constructed trom monodisperse silica colloidal partices in diameter of about 300 nm is reported. The films were prepared from an ethanol suspension by vertical deposition that relies on capillary forces to assemble colloidal crystal particles on a vertical substrate. The 3D ordered films were characterized by transmission spectra and scanning electric microscope (SEM). The effect of evaporation temperature, particle concentration and sintered temperature on the quality of colloidal particle crystal film was investigated.     

Controlled Thickness Deposition of Ultrathin Ceramic Films by Spin Coating

This work describes the combined use of nanocrystal water-based colloidal suspensions with spin-coating deposition in order to obtain ultrathin ceramic films. We have used tin oxide (SnO₂) nanoparticles, with particle diameter sizes ranging from 1–5.5 nm, to develop the deposition approach. Films obtained under several conditions were characterized by ellipsometry and atomic force microscopy, showing that the process has the ability to produce ultrathin ceramic films, with thickness ranging from 10–100 nm, with good particle packing. Additionally, electrical measurements in the films indicate good homogeneity and potential for various applications.     

Chemical Solution Deposition of Columnar-Grained Metallic Lanthanum Nitrate Thin Films

Columnar and (100)-oriented LaNiO₃ thin films were prepared on silicon substrates by a chemical solution deposition (CSD) process using a 0.05 M solution. By reducing the individual layer thickness to 10 nm, columnar LaNiO₃ films with a lateral grain size of ∼120 nm were obtained. The success of this approach required restricting the individual layer thickness to a value below the grain size observed for equiaxed films. This change in microstructure resulted in an improvement in conductivity. The columnar LaNiO₃ film with a thickness of 300 nm showed a resistivity of 4.5 × 10⁻⁵Ω·cm, which is lower by one order of magnitude than that of fine-grain equiaxed films that typically result from CSD methods.     

Ferroelectric yttrium doped hafnium oxide films from all-inorganic aqueous precursor solution

We report a unique aqueous solution deposition method to prepare yttrium doped hafnium oxide (Y:HfO₂) thin films using all-inorganic reagents. The composition and chemical bonding features of the films were investigated using X-ray photoelectron spectroscopy. The Y:HfO₂ film was integrated into metal-insulator-semiconductor (MIS) structure capacitors for electrical measurements. A transition of the polarization behavior from apparent ferroelectric-type to linear dielectric-type was observed for films with thickness increasing from 25?nm to 80?nm, which is correlated to the dominant crystal structure change from high-symmetry phase to monoclinic phase evidenced by grazing incidence X-ray diffraction analysis.     

Spectroscopic ellipsometry characterization of TiO2 thin films prepared by the sol–gel method

TiO₂ thin films were prepared on SiO₂/Si(100) substrates by the sol–gel process. XRD results indicate that the major phase of TiO₂ thin films is anatase. The surface morphology and cross-section are observed by FE-SEM. The surface of thin films is dense, free of cracks and flat. The average grain size is about 60–100 nm in diameter. The thickness of single layer TiO₂ thin films is about 60 nm, which increases with the concentration of solution. Ellipsometric angles ψ, Δ are investigated by spectroscopic ellipsometry. The optical constant and the thickness of TiO₂ thin films are fitted according to Cauchy dispersion model. The results reveal that the refractive index and the extinction coefficient of TiO₂ thin films in wavelength above 800 nm are about 2.09–2.20 and 0.026, respectively. The influences of processing conditions on the optical constants and thicknesses of TiO₂ thin films are also discussed.     

在ITO玻璃衬底上制备锆钛酸铅铁电薄膜

利用射频反应性溅射沉积技术在掺的Ｓｎ的Ｉｎ２Ｏ３导电透明膜衬底上制备了钙钛矿型Ｐｂ（Ｚｒ,Ｔｉ）Ｏ３（ＰＺＴ）铁电薄膜。研究了沉积参量与热处理工艺对铁电薄膜结构和性能的影响。运用Ｘ射线衍射、Ｘ射线光电子能谱和扫描电镜等技术,分析了薄膜的晶体结构、表面形貌和表面元素化学状态。测量了不同处理条件下薄膜的铁电性能。结果表明：在掺Ｓｎ的Ｉｎ２Ｏ３导电透明膜衬底上可以得到表面无裂纹,化学计量比符合要求的ＰＺ     

Preparation of nanostructured TiO2 thin films by aerosol flame deposition process

Titania thin films were prepared by using aerosol flame deposition process via the pyrolysis of titanium tetra-isopropoxide (TTIP) precursor. We analyzed the specific surface area, primary and secondary particle sizes, crystal structure, thin film morphology and thickness by BET method, electrophoretic light scattering, X-ray diffraction and scanning electron microscopy, respectively. The specific surface area of TiO₂ particles deposited is over three-times larger than that of commercial Degussa P25. Crystallite structure of TiO₂ particles can be controlled by changing the ratio of CH₄/O₂ flow rates. We could prepare TiO₂ thin films with single anatase phase by keeping the ratio of CH₄/O₂ flow rates at 200 ml/min: 1,000ml/min. As N₂ carrier gas flow rate to bubbler increases, the primary and secondary particle sizes increase, but decrease with increasing total N₂ gas flow rate through the central tube. The shorter the deposition height is, the smaller the deposition area is, but the thin film becomes thicker in the central region.     

Interface-layer-assisted reliable ferroelectricity in BiFeO3 thin films by chemical solution deposition

BiFeO₃ thin films, specifically those fabricated by chemical solution deposition, suffer from severe leakage that hinder the acquirements of their intrinsic high polarizations and are thus normally not considered for use in practical electronics. The controlled fabrication of thin films with reduced leakage is of vital importance. In the present work, BiFeO₃ films (with thicknesses below ~300 nm), assisted by an interfacial amorphous layer, were fabricated by chemical solution deposition on Pt/Ti/SiO₂/Si substrates. This facile method facilitates the growth of the mentioned amorphous layer, and the ferroelectric properties of the obtained films were greatly enhanced. The conducting mechanisms of both types of thin films were systematically investigated to understand the impact of the designed interface. The results not only advance the potential use of BiFeO₃ thin films in electromechanical devices but also promote chemical solution deposition as a promising methodology for the fabrication of high-quality ferroelectric films with compressed leakage.     

Cu_3N薄膜制备及其性能研究

Cu3N薄膜的晶面取向、沉积速率、电学特性等性质除与制备方法有关外,还和制备工艺参数有很大关系。溅射法制备Cu3N薄膜工艺参数主要有,混合气体(N2+Ar)中氮气分压比r、基底温度T(℃)、溅射功率P(W)。为了研究Cu3N薄膜的性能与其制备工艺参数之间关系,本文采用反应射频磁控溅射法,在玻璃基底上成功制备了Cu3N薄膜,并研究了工艺参数对其晶面取向、膜厚、电学性能、沉积速率的影响。