卷对卷制备柔性硅基薄膜电池集成串联组件的研究

卷对卷制备出聚酰亚胺(PI)衬底柔性 硅(Si)基薄膜太阳电池集成串联组件。对卷对卷制备柔性Si基薄膜电池集成串联的优势 进行了分析,讨论了制约柔性薄膜电 池集成串联组件的主要因素;设计了两种柔性薄膜电池集成串联组件结构;进行了柔性 薄膜电池集成串联组件研制,并进行了对比分析。采用卷对卷工艺制备了非晶硅(a-Si)电 池,采用 卷对卷激光刻划、卷对卷丝网印刷与卷对卷精密点胶实现集成串联,形成柔性薄膜电池集成 串联组件,柔性a-Si单结集成串联组件全面积转换效率达到5.96％(AM1.5,全面积为117.3 cm²)。     

Nano-scale metallization of Au on flexible polyimide substrate by reversal imprint and lift-off process

The nano-scale metallization of Au on flexible polyimide substrate by reversal imprint and lift-off process was investigated. The nano-scale mold was fabricated; the anti-adhesion property of nanometer-size Si-mold was improved and the surface free energy was calculated with the contact angle measurement. The ∼150 nm width Au nano-wires were successfully fabricated on Si and on flexible polyimide substrate with the proposed process. The PMMA thickness dependent trend with reversal imprinting and Au nano-wires lift-off results were also investigated by SEM analysis.     

Dielectric multilayered interference filters deposited on polyimide films

Dielectric multilayered interference filters deposited on spin-coated polyimide film exhibit excellent optical and mechanical properties and are cheaper than conventional filters on glass substrates. Application of these filters to fibre pig-tailed blocking filters is presented.<>     

Physical investigation of the impact of electrolessly deposited self-aligned caps on insulation of copper interconnects

With the miniaturization of ULSI circuits and the associated increase of current density up to several MA/cm², copper interconnects are facing electromigration issues at the top interface with the dielectric capping layer SiC(N). A promising solution is to insert selectively on top of copper lines a CoWP metallic self-aligned encapsulation layer, deposited using a wet electroless process. We study the impact of this process on electrical line insulation as a function of cap thickness at the 65 nm technology node and we investigate the physical origin of leakage currents. Below a critical thickness, only a slight leakage current increase of less than one decade is observed, remaining within the specification for self-aligned capping layer processes. Above this critical thickness, large leakage currents are generated due to the combined effect of lateral growth and the presence of parasitic redeposited nodules. We show that a simple phenomenological model allows to reproduce the experimental data, to assess quantitatively the contribution of parasitic defects, and to predict that the self-aligned barrier technology should be extendible up to the 32 nm node, provided that a thin cap layer of less than 8 nm is used.     

Micro-scale twistable organic field effect transistors and complementary inverters fabricated by orthogonal photolithography on flexible polyimide substrate

We fabricated micro-scale organic field effect transistors (OFETs) and complementary inverters on a twistable polyimide (PI) substrate by applying orthogonal photolithography. By applying a highly fluorinated photoresist and development solvent, it becomes possible to create organic electronic devices with a micro-scale channel length without damaging the underlying polymer films. The 3 μm-channel twistable pentacene OFET devices and complementary inverters created using p-type pentacene and n-type copper hexadecafluorophthalocyanine exhibited stable electrical characteristics from flat to twist configurations (angle of up to ∼50°). The realization of twistable micro-scale OFETs and inverter devices on a PI substrate may enable the production of functioning organic devices in practical, flexible configurations.     

聚酰亚胺衬底CIGS薄膜附着性的改善

为改善聚酰亚胺(PI)衬底Cu(In,Ga)Se2(CIGS)薄膜的附着性,提出在NaF沉积前预先在Mo层上蒸发沉积100nm厚的In-Ga-Se(IGS)薄膜的新掺Na工艺。结果表明:这种IGS-NaF-CIGS式新工艺可显著改善CIGS薄膜的附着,而且CIGS薄膜材料和器件特性没有显著退化;新工艺促进了NaInSe2的生成,减少了In-Se二元相的残余,但也造成薄膜电阻率的升高和电池填充因子的下降,进而导致制备的PI衬底CIGS电池的转换效率由9.8%降至9.0%。综合考虑附着性的改善和器件效率的轻微下降,新工艺利大于弊,有很好的应用前景。     

挠性基板材料简介

应用于IC封装（Integrated Circuit,集成电路）的FPC（F1exible Printing Circuit,挠性印制电路）称为挠性基板。随着电子产品向高密度、小型化、高可靠性方向发展,挠性基板因其优良的弯折性能,可实现三维互连的优点,已广泛应用于军事航天、医疗、汽车及消费类电子等领域。     

High-gain W-band-printed antenna on flexible substrate

This article demonstrates a novel type of series-fed planar antenna array for a W-band (70 GHz) application. The proposed architecture is a 5-element antenna array with 10 numbers of gap-coupled parasitic patches in microstrip configuration over a thin, flexible and bio-compatible substrate named LCP (liquid crystal polymer). A detailed design methodology with all fabrication constraints has been elaborated on here. Full wave analysis of the whole structure has been carried out in the FEM-based 3D electromagnetic (EM) solver ANSYS HFSS Suite V.19.2. Parametric simulations were studied to achieve the optimized values of all design parameters. Further, an empirical electrical equivalent circuit model is proposed for the antenna array, and it was validated with the simulation results obtained from the FEM solver. Two prototypes have been fabricated, and measurements were carried out to fetch all the designed antenna parameters. The proto version of the antenna offers peak directive gain of about 19 dBi with better than 22 dB of return loss and 80% radiation efficiency for the frequency range of 67–85 GHz. Experimental and simulated results closely match each other. Small deviations are attributed to practical imperfections incurred by fabrication tolerances, measurement inaccuracies, testing, assembly-related issues and so forth. Finally, the current research work is compared with the recently reported literature.     

A novel fabrication process of MEMS devices on polyimide flexible substrates

Micro-electro-mechanic-system (MEMS) devices on flexible substrate are important for non-planar and non-rigid surface applications. In this paper, a novel and cost-effective fabrication process for an 8 × 8 MEMS temperature sensor array with a lateral dimension of 2.5 mm × 5.5 mm on a polyimide flexible substrate is developed. A 40 μm thick polyimide substrate is formed on a rigid silicon wafer using as a mechanical carrier throughout the fabrication by four successive spin coating liquid polyimide. The arrayed temperature sensing elements made of 1200 Å sputtered platinum thin film on polyimide substrate show excellent linearity with a temperature coefficient of resistance of 0.0028/°C. The purposed sensor obtains a high sensitivity of 0.781 Ω/°C at 8 mA at constant drive current. Because of the low heat capacity and excellent thermal isolation, the temperature sensing element shows excellent high sensitivity and a fast thermal response. The finished devices are flexible enough to be folded and twisted achieving any desired shape and form. Employing spin-coated liquid polyimide substrate instead of solid polyimide sheet minimizes the thermal cycling as well as improves the production yield. This fabrication technique first introduces the spin-coated PDMS (Polydimethylsiloxane) interlayer between the silicon carrier and the polyimide substrate and makes the polyimide-based devices separate much easier and greatly simplifies the fabrication process with a high production yield. A non-successive two-stage cure procedure for the polyimide precursor is developed to meet low-temperature requirement of the PDMS interlayer. The fabrication procedure developed in this research is compatible with conventional MEMS technology through an optimized integration process. The novel flexible MEMS technology can benefit the development of other new flexible polyimide-based devices.     

挠性基板制造工艺

应用于IC封装(Integrated Circuit,集成电路)的FPC(Flexible Printing Circuit,挠性印制板)称为挠性基板。随着电子产品向高密度、小型化、高可靠性方向发展,挠性基板线路制造工艺也从传统的减成法发展到半加成法,同时,一些新型的薄型挠性基板及埋嵌器件挠性基板也逐渐应用于航天、医疗及消费类电子等领域[1]。     

Enhanced printed temperature sensors on flexible substrate

In this paper we present the development of enhanced printed temperature sensors on large area flexible substrates. The process flow is a fully screen printed technology that uses exclusively solution-processed materials. These Screen printed temperature sensors are based on resistive pastes integrated in a Wheatstone bridge circuit. Substrate is a commercial Poly Ethylene Naphtalate (PEN) with a thickness of 125 µm. Functional temperature sensors are demonstrated and characterized with good electrical properties, showing a good sensitivity of 0.06 V/°C at V_in=4.8 V. This sensitivity is enhanced by the annealing and the O₂ plasma treatment. Based on this temperature sensor, we have developed a demonstrator for human body temperature detection.     

聚酰亚胺衬底柔性非晶硅薄膜电池集成串联组件的研究

研究了柔性Si基薄膜太阳电池集成串联组件的制备与关键技术。对导电栅线在柔性薄膜太阳电池集成串联组件中的重要性进行了模拟计算,对柔性薄膜太阳电池激光刻蚀进行了理论分析与实验优化,并对柔性Si基薄膜太阳电池集成串联组件进行了设计与研制。在聚酰亚胺(PI)衬底上,通过卷对卷磁控溅射与卷对卷等离子增强化学气相沉积(PECVD)依次沉积复合背反射层Ag/ZnO、Si基薄膜层和透明导电膜层,采用激光刻蚀与丝网印刷工艺相结合实现集成串联,制备了柔性非晶Si(a-Si)薄膜太阳电池集成串联组件。柔性单结集成串联组件有效面积转换效率达到了4.572%(AM0),开路电压Voc=5.065V,填充因子FF=0.552。     

Fabrication and characterization of low-cost ultrathin flexible polyimide interposer

A passive interposer, which is a way to bridge the feature gap between the integrated circuit (IC) and the package substrate, is a key building block for high performance 3-D systems. In this paper, polyimide (PI) is proposed as an alternative to glass and silicon based interposers for cost-effective 2.5-D/3-D IC integration. The development of interconnect technology using an ultrathin flexible polyimide interposer (UFPI) for 2.5-D/3-D packaging applications is described in detail. A semi-additive process consisting of copper seed layer deposition, photolithography, and electrolytic copper pattern plating is used for fabricating a double-sided flexible fan out interposer. A UFPI with electrodeposited micro-scale copper (Cu) fine patterns and laser drilling microvia is investigated using a scanning electron microscope (SEM), energy-dispersive spectrometry (EDS), X-ray spectrometry, and an optical 3-D profilometer. The UFPI with fine pitch on 12.5 μm thin PI substrates has been demonstrated. The result is a proof-of-concept to exploit the opportunities of cost-effective 2.5D flexible interposer production.     

柔性基底印刷叉指电容的阻抗特性研究

为降低电容制作成本,采用丝网印刷的方式在柔性PET基底上印制出可用于较高频段范围的叉指电容。首先利用电磁仿真软件设计出叉指电容的结构;然后通过实验研究了工艺参数对印刷薄膜电阻值的影响和油墨种类对印刷叉指电容阻抗特性的影响,确定合适的丝网印刷工艺参数和导电性能良好的油墨;最后,采用上述油墨和工艺参数印制了不同结构参数的叉指电容,测试了其阻抗特性,分析了不同结构参数对其阻抗特性的影响。实验结果表明:印刷叉指电容的阻抗特性与理论仿真结果一致;叉指电容所有结构参数中,指的长度和指的个数对其阻抗特性影响较大,印制的叉指电容在100~600 MHz范围内具有较好的阻抗特性。     

Growth of ITO thin films on polyimide substrate by bias sputtering

Transparent conducting indium tin oxide thin films were deposited on polyimide substrates by RF bias sputtering of ITO target. The influences of bias voltage on the structural and electrical properties of the films were investigated. In order to correlate the material characteristics with the plasma parameters during sputtering, we employed Langmuir probe and optical emission spectral studies. The films deposited onto positively biased substrates were poorly crystalline. An improvement in crystallinity was observed with increase in negative bias. The films deposited at a bias voltage of ?20 V showed a preferred orientation in the [1 1 1] direction and has minimum resistivity compared to films grown at other biasing conditions. The measured plasma parameters were correlated to the film properties. The ITO films thus grown have been used as the channel layer for the fabrication of thin film transistor.     

Enhanced outcoupling in flexible organic light-emitting diodes on scattering polyimide substrates

We demonstrate an upscalable approach to increase outcoupling in organic light-emitting diodes (OLEDs) fabricated on flexible substrates. The outcoupling enhancement is enabled by introducing a thin film of microporous polyimide on the backside of silver nanowire (AgNW) electrodes embedded in neat colorless polyimide. This porous polyimide film, prepared by immersion precipitation, utilizes a large index contrast between the polyimide host and randomly distributed air voids, resulting in broadband haze (>75%). In addition, the composite polyimide/AgNW scattering substrate inherits the high thermal (>360 °C), chemical, and mechanical stability of polyimides. The outcoupling efficiency of the composite scattering substrate is studied via optical characterization of the composite substrate and electron microscopy of the scattering film. The flexible scattering substrates compared to glass/indium tin oxide (ITO) allows for a 74% enhancement in external quantum efficiency (EQE) for a phosphorescent green OLED, and 68% EQE enhancement for a phosphorescent white OLED. The outcoupling enhancement remains unharmed after 5000 bending cycles at a 2 mm bending radius. Moreover, the color uniformity over viewing angles is improved, an important feature for lighting applications.     

High-density CMOS interconnect realized on flexible organic substrate

High-density interconnect integrated circuits (ICs) have been realized on flexible organic substrate with the demonstration of excellent electrical yield and well maintained reliability. Long metal-via chain structures were pre-fabricated with 0.18-/spl mu/m Cu-backend technology on Si-substrate and later transferred onto the organic substrates with wafer-transfer technology. By optimizing the transfer process with thin FR-4 (4 mil /spl ap/0.1 mm), our results demonstrate that both Cu/USG and Cu/low-/spl kappa/ [Black-Diamond (BD)]-based interconnects can be reliably realized over the organic substrate. For via chain structures with via size /spl sim/0.26 /spl mu/m and via number /spl sim/10/sup 4/, the yields were /spl ges/90% and 85% at room temperature and at 100/spl deg/C, respectively. The dielectric breakdown field of the Cu/USG transferred interconnect ICs has been characterized to be /spl ges/5 MV/cm, which is comparable with the results on Si-substrate.     

Evaluation of conductive-to-resistive layers interaction in thick-film resistors

Low-frequency noise spectroscopy is used to examine the interactions between resistive and conductive films that take place during thick-film resistor (TFR) fabrication. Two noise parameters are introduced to quantitatively describe the strength of these interactions. They refer to intensity and repeatability of the noise generated in the resistor interfaces. Extensive experimental studies performed on ruthenium dioxide and bismuth ruthenate TFRs terminated with gold, platinum–gold, palladium–silver and platinum–silver contacts from various manufacturers allow to establish criteria of pastes compatibility and to evaluate compatible systems of pastes for standard “on-alumina” and low-temperature co-fired ceramic (LTCC) resistors. It is found that gold contacts form low-size-effect, stable, low-noise interfaces both with ruthenium dioxide and bismuth ruthenate TFRs. Silver-containing terminations can be used with bismuth ruthenate but not with ruthenium dioxide resistors. Manufacturer optimized system of pastes for LTCC technology works best when used to produce high-resistive, co-fired devices.     

Low temperature Solution-Processed ZnO film on flexible substrate

Transparent conductive ZnO films were directly deposited on unseeded polyethersulfone (PES) substrates with a spin-spray method using aqueous solution at a low substrate temperature of 85 °C. All ZnO films were crystalline with wurtzite hexagonal structure and impurity phases were not detected. ZnO films deposited without citrate ions in the reaction solution had a rod array structure. In contrast, ZnO films deposited with citrate ions in the reaction solution had a continuous, dense structure. The transmittance of the ZnO films was improved from 11.9% to 85.3% as their structure changed from rod-like to continuous. After UV irradiation, the ZnO films with a continuous, dense structure had a low resistivity of 9.1×10⁻³ Ω cm, high carrier concentration of 2.7×10²⁰ cm⁻³ and mobility of 2.5 cm² V⁻¹ s⁻¹.     

溅射压强对柔性PET衬底ZnO薄膜性能的影响

利用直流磁控溅射法,在室温水冷柔性PET衬底上成功制备出了掺钛氧化锌(ZnO:Ti,TZO)透明导电薄膜。通过X射线衍射(XRD)研究了薄膜的结构,用扫描电镜(SEM)研究了薄膜的表面形貌,用四探针和紫外-可见分光光度计等仪器对薄膜的特性进行测试分析,研究了溅射压强对ZnO:Ti薄膜表面结构、形貌、力学、电学和光学性能的影响。结果表明,溅射压强对PET衬底上的TZO薄膜的性能有显著的影响,实验制备的ZnO:Ti薄膜为具有C轴择优取向的六角纤锌矿结构的多晶薄膜;当溅射压强从2Pa增加到4Pa时,薄膜的电阻率由10.87×10-4Ω.cm快速减小到4.72×10-4Ω.cm,随着溅射压强由4Pa继续增大到6Pa,薄膜的电阻率变化平缓,溅射压强为5Pa时薄膜的电阻率最小,为4.21×10-4Ω.cm;经计算得到6Pa时样品薄膜应力最小,为0.785 839GPa;所有样品都具有高于91%的可见光区平均透过率。