Existence theory and simulations for one-dimensional radiative flows

We consider the coupling of the radiative heat transfer equations and the energy equation for the temperature T of a compressible fluid within the finite segment [0, L]. Using the technique of upper and lower sequences associated to integro-parabolic equations, we establish the existence and uniqueness of a classical solution T, 0 ? Λ₋ ? T(x, t) ? Λ₊ < ∞ with corresponding radiative intensity I(x, Ω, ν, t). The boundary is considered to be semi-reflexive with reflection coefficient ρ, 0 ? ρ(μ) ? 1. The existence of the solution for the coupled system does not depend on any additional hypotheses besides that the total absorption coefficient is bounded and that the ratio between the coefficients of scattering and total absorption is uniformly bounded. As well we present numerical results for the coupled evolutive problem. Using the operational representation encountered in the course of establishing the existence theory, we derive vector Green’s functions for the transport equation which allow us to solve numerically the coupled system.     

Effect of crystallinity on the memory effect of Ge nanocrystals synthesized by atom beam sputtering

The effect of crystallinity of Ge nanocrystals on the charge storage properties of the metal oxide semiconductor (MOS) structure has been investigated. MOS structure with Ge nanocrystals embedded in the oxide has been fabricated by using atom beam sputtering technique. After annealing at 600 °C in Ar + H₂ atmosphere, capacitance-voltage (C-V) measurements show flat band voltage shift of ∼0.9 V. It which is a clear indication of the memory effect of Ge nanocrystals, while unannealed structure doesnot show any hysteresis in the C-V curve. Micro Raman spectroscopy and X-ray diffraction (XRD) analyses show that crystalline content of Ge nanoparticles in the MOS structure has increased after annealing.     

Refinement in the ultrasonic velocity data and estimation of the critical parameters for molten uranium dioxide

Based on the previously reported internal pressure approach and by making use of recent and more accurate experimental measurements on the density, and heat capacity of liquid UO₂ up to ∼8000 K, reliable data on the sound propagation velocity in molten uranium dioxide have been obtained. An equation of state for liquid urania has also been developed which predicts a critical temperature (T_c) ≈ 10 500 K, critical pressure (P_c) ≈ 219 MPa and critical density (ρ_c) ≈ 2510 kg m⁻³.     

The ternary system: silicon-uranium-vanadium

Phase equilibria in the system Si-U-V were established at 1100 °C by optical microscopy, EMPA and X-ray diffraction. Two ternary compounds were observed, U₂V₃Si₄ and (U_1−xV_x)₅Si₃, for which the crystal structures were elucidated by X-ray powder data refinement and found to be isotypic with the monoclinic U₂Mo₃Si₄-type (space group P2₁/c; a = 0.6821(3), b = 0.6820(4), c = 0.6735(3) nm, β = 109.77(1)°) and the tetragonal W₅Si₃-type (space group I4/mcm, a = 1.06825(2), c = 0.52764(2) nm), respectively. (U_1−xV_x)₅Si₃ appears at 1100 °C without any significant homogeneity region at x ∼ 0.2 resulting in a formula U₄VSi₃ which corresponds to a fully ordered atom arrangement. DTA experiments clearly show decomposition of this phase above 1206 °C revealing a two-phase region U₃Si₂ + V₃Si. At 1100 °C U₄VSi₃ is in equilibrium with V₃Si, V₅Si₃, U₃Si₂ and U(V). At 800 °C U₄VSi₃ forms one vertex of the tie-triangle to U₃Si and V₃Si. Due to the rather high thermodynamic stability of V₃Si and the corresponding tie-lines V₃Si + liquid at 1100 °C and V₃Si + U(V) below 925 °C, no compatibility exists between U₃Si or U₃Si₂ and vanadium metal.     

Effect of 200 MeV Ag ion irradiation on structural and electrical transport properties of Fe3O4 thin films

Thin films of Fe₃O₄ have been deposited on single crystal MgO(1 0 0) and Si(1 0 0) substrates using pulsed laser deposition. Films grown on MgO substrate are epitaxial with c-axis orientation whereas, films on Si substrate are highly 〈1 1 1〉 oriented. Film thicknesses are 150 nm. These films have been irradiated with 200 MeV Ag ions. We study the effect of the irradiation on structural and electrical transport properties of these films. The fluence value of irradiation has been varied in the range of 5 × 10¹⁰ ions/cm² to 1 × 10¹² ions/cm². We compare the irradiation induced modifications on various physical properties between the c-axis oriented epitaxial film and non epitaxial but 〈1 1 1〉 oriented film. The pristine film on Si substrate shows Verwey transition (T_V) close to 125 K, which is higher than generally observed in single crystals (121 K). After the irradiation with the 5 × 10¹⁰ ions/cm² fluence value, T_V shifts to 122 K, closer to the single crystal value. However, with the higher fluence (1 × 10¹² ions/cm²) irradiation, T_V again shifts to 125 K.     

Erosion of carbon fiber composites under high-fluence heavy ion irradiation

The ion-induced erosion, determining by sputtering yield Y and surface evolution including structure and morphology changes of the modified surface layers, of two commercial carbon fiber composites (CFC) with different reinforcement - KUP-VM (1D) and Desna 4 (4D) have been studied under 30 keV Ar⁺ high fluence (φt ∼ 10¹⁸-10²⁰ ion/cm²) irradiation in the temperature range from room temperature to 400 °C. Ion-induced erosion results in the changes of carbon fiber structure which depend on temperature and ion fluence. Monitoring of ion-induced structural changes using the temperature dependence of ion-induced electron emission yield has shown that for Desna 4 and KUP-VM at dynamic annealing temperature Т_а ≈ 170 °С the transition takes place from disordering at T < T_a to recrystallization at T > T_a. The annealing temperature Т_а is close to the one for polycrystalline graphites. Microscopy analysis has shown that at temperatures Т < T_a the etching of the fibers results in a formation of trough-like longitudinal cavities and hillocks. Irradiation at temperatures T > T_a leads to a crimped structure with the ribs perpendicular to fiber axis. After further sputtering of the crimps the fiber morphology is transformed to an isotropic globular structure. As a result the sputtering yield decreases for Desna 4 more than twice. This value is almost equal to that for KUP-VM, Desna 4, polycrystalline graphites and glassy carbons at room temperature.     

Thermoelectric power studies of ferromagnet U2ScB6C3

The thermoelectric power (TEP) of a ferromagnet U₂ScB₆C₃ (T_C = 61 K) has been measured in the temperature range 5-300 K. The TEP is positive over the whole measured temperature range and reaches a relatively large value at room temperature of 29 μV/K. Below 30 K and above 200 K the TEP follows a straight line S(T) ∼AT, with slope of 0.23 and 0.085 μV/K², respectively. The change in the slope can be explained by the electron-phonon interaction renormalization effects or spin-reorientation associated with a change in the electronic structure. Analysing the temperature dependence of the ratio [S(T)/T]/[S_300 K/300] and taking into account the specific heat data, we suggest that spin fluctuations are another important factor in determining the thermoelectric power behaviour of U₂ScB₆C₃.     

Sputtering and surface state evolution of Bi under oblique incidence of 120 keV Ar ions

The sputtering and surface state evolution of Bi/Si targets under oblique incidence of 120 keV Ar⁺ ions have been investigated over the range of incidence angles 0° ? θ_i ? 60°. Increasing erosion of irradiated samples (whose surface thickness reduced by ∼3% at normal incidence up to ∼8% at θ = 60°) and their surface smoothing with reducing grain sizing were pointed out using Rutherford backscattering (RBS), atomic force (AFM) and X-ray diffraction (XRD) techniques. Measured sputtering yield data versus θ_i with fixed ion fluence to ∼1.5 × 10¹⁵ cm⁻² are well described by Yamamura et al. semi-empirical formula and Monte Carlo (MC) simulation using the SRIM-2008 computer code. The observed increase in sputter yield versus incidence angle is closely correlated to Bi surface topography and crystalline structure changes under ion irradiation.     

Proton sputtering from polycrystalline Al surface interacting with highly charged ions at grazing incidence angle

Sputtering processes of protons from a polycrystalline Al surface interacting with Ar^q+ (q = 3-14) ions at a grazing incidence angle (∼0.5°) were investigated. The intensity of protons (I_H) detected in coincidence with scattered Ar atoms was measured as a function of q. I_H saturated at q ? 10, although it increased rapidly with q at 3 ? q ? 8. The angular distribution of protons with low kinetic energy (?2 eV) began to deviate from the cosine distribution and assumed a rather flat equidistribution as q increased. To analyze the sputtering processes of protons at the grazing incidence angle, a modified model of the “above-surface potential sputtering model” was proposed by considering image acceleration of projectile ions.     

Influence of metallurgical variables on delayed hydride cracking in Zr-Nb pressure tubes

During service, Zr-2.5Nb pressure tubes of nuclear power reactors may be prone to suffer from crack growth by delayed hydride cracking (DHC). For a given hydrogen plus deuterium concentration there is a critical temperature (T_C) below which DHC may occur. In this work, T_C was measured for specimens cut from pressure tubes made in Canada (CANDU) and in Russia (RBMK). Hydrogen was added to the specimens to get concentrations ranging from 24 to 60 wt ppm. It was found that T_C was higher than the corresponding precipitation temperature. The crack propagation velocity (V_P), measured in axial direction, increases from a minimum at T_C to a maximum at a temperature close but higher than the precipitation temperature. At lower temperatures, when hydride precipitates are present in the bulk, V_P follows an Arrhenius law: V_P = A exp(−Q/RT), with an activation energy Q of 66-68 kJ/mol for both tubes. The RBMK material presented lower velocities than CANDU one.     

Pure ionization cross section of helium and ionization mechanism

Pure target ionization was investigated for 0.4-6.4 MeV C^q+(q = 1-4) + He and O^q+(q = 1-4) + He collisions. The double-to-single target ionization ratios R₂₁ were measured using coincidence techniques. We compare our results with existing experimental results and find they are in good agreement. The ratio R₂₁ is nearly independent of projectile charge state. The relation of R₂₁ ∼ V is analyzed using the over barrier model (OBM) and ionization probability, which is described in our extended over barrier model. Our calculation agrees well with the experimental results.     

The first DC performance test and analysis of CC conductor short sample at ASIPP conductor test facility

The first DC performance experiments of ITER correction coil (CC) conductor short sample have been carried out in the conductor test facility of Institute of Plasma Physics, CAS (ASIPP) in January this year. Those experiments aim to investigate the DC performance of ITER CC conductor. The tested conductor short sample is bended as a half circle with the diameter of 270 mm to meet the background magnetic field shape. The half circle part of sample is longer than the final twist pitch. The current sharing temperature (T_cs) in the 3.86 T external magnetic field (B_ex), ≤12 kA could be measured including the critical current (I_c) run. There is no obvious impact of 1000 cycles on DC performance. Those measured T_cs results are in agreement with the expected results from strand scaling.     

Enthalpy measurements of La2Te3O9 and La2Te4O11

Enthalpy increment measurements on La₂Te₃O₉(s) and La₂Te₄O₁₁(s) were carried out using a Calvet micro-calorimeter. The enthalpy values were analyzed using the non-linear curve fitting method. The dependence of enthalpy increments with temperature was given as: H°(T) − H°(298.15 K) (J mol⁻¹) = 360.70T + 0.00409T² + 133.568 × 10⁵/T − 149 923 (373 ? T (K) ? 936) for La₂Te₃O₉ and H°(T) − H°(298.15 K) (J mol⁻¹) = 331.927T + 0.0549T² + 29.3623 × 10⁵/T − 114 587 (373 ? T (K) ? 936) for La₂Te₄O₁₁.     

Incident photon energy and Z dependence of L X-ray relative intensities

The intensity ratios, I_Lk/I_Lα1 (k = l, η, α₂, β₁, β_2,15, β₃, β₄, β_5,7, β₆, β_9,10, γ_1,5, γ_6,8, γ_2,3, γ₄), have been evaluated for elements with atomic number 36 ? Z ? 92 at incident photon energies ranging E_L1 < E_inc ? 200 keV using currently considered to be more reliable theoretical data sets of different physical parameters, namely, L_i (i = 1-3) subshell photoionization cross sections based on the relativistic Hartree-Fock-Slater model, the X-ray emission rates based on the Dirac-Fock model, and the fluorescence and Coster-Kronig yields based on the Dirac-Hartree-Slater model. At incident photon energies above the K-shell ionization threshold, the contribution to the production of different L X-ray lines due to the additional L_i (i = 1-3) subshell vacancies created following decay of the primary K-shell vacancies have also been included in the present calculations. The important features pertaining to dependence of the tabulated intensity ratios on the incident photon energy and atomic number have been discussed.     

Response of synthetic coffinite to energetic ion beam irradiation

Coffinite, USiO₄, is one of the two most abundant and important naturally occurring U⁴⁺ phases (the other is UO₂), and it is an alteration product of the UO₂ in spent nuclear fuel when in contact with silica-rich groundwater under reducing conditions. Despite its ubiquity, there are very limited data on the response of coffinite to radiation. Here, we present the results of the first systematic investigation of energetic ion beam irradiation (1 MeV Kr²⁺) of ultra-fine, synthetic coffinite (20-50 nm). In situ transmission electron microscopy (TEM) showed that the crystalline-to-amorphous transformation occurs at a relatively low dose, ∼0.27 displacements per atom (dpa) at room temperature. The critical temperature, T_c, above which coffinite cannot be amorphized, is low (∼608 K). Synthetic coffinite is more stable as compared with isostructural zircon (ZrSiO₄; T_c = 1000 K) and thorite (ThSiO₄; T_c above 1100 K) upon ion beam irradiation at elevated temperature, suggesting enhanced defect annealing behavior in nano-sized synthetic coffinite. Irradiation was found to decrease the temperature required to induce phase decomposition process in coffinite upon thermal annealing. A good correlation among the critical amorphization temperature, T_c, phase decomposition temperature, T_f, and the temperature range of the two-phase (ZrO₂ and SiO₂) co-existed region was identified.     

Optically stimulated luminescence (OSL) of Lu2SiO5:Ce powder: A preliminary study

Optically stimulated luminescence (OSL) of Lu₂SiO₅:Ce powder (Phosphor Technology Ltd., UK) has been measured by Risø TL/OSL Reader (TL-DA-15). Upon blue photon stimulation (λ_ex ∼470 nm) the material shows strong OSL signal that can detect β-irradiation right up to the dose of ∼0.2 Gy.A brief discussion on this finding is presented by comparing the thermoluminescence of the system with and without optical stimulation. The two key important parameters namely, trap-depth (E) and frequency factor (s) of the main peaks that occur at 85 and 232 °C are determined.     

Relative intensities for Li (i = 1-3) and Mi (i = 1-5) subshell X-rays

The intensities for L_i (i = 1-3) subshell X-ray lines have been computed relative to the most intense line in each series, for elements with 30 ? Z ? 92, from published X-ray emission rates based on the Dirac-Fock (DF) model. In the case of M_i (i = 1-5) subshell X-ray lines, complete sets of emission rates based on both the Dirac-Hartree-Slater and the DF models have been generated for elements with 65 ? Z ? 92 by logarithmic interpolation of the data available for a limited number of elements. The intensities for different M X-ray lines have been computed relative to the most intense line in each series using these two sets of emission rates. The L_i (i = 1-3) and M_i (i = 1-5) subshell X-ray relative intensities computed from the DF model based emission rates have been least-squares-fitted to polynomials in the atomic number for use in software packages for quantitative elemental analysis using X-ray emission techniques and for other applications.     

A study on swift (∼100 MeV) heavy ion irradiated Ni films on Si substrates

Ni thin films (∼50 nm) on silicon substrates have been irradiated from 100 MeV swift heavy ions of Fe⁷⁺ with a fluence of 10¹² ions cm⁻². SEM studies show a nice feature of interwoven grains which looks like a knitted network which has been resolved as a spherical grainy structure from AFM studies. Chemical phase identification of the grains has been done from XRD studies and it is found that there is a formation of the Ni₂Si silicide phase having average grain size of ∼70 nm. The devices have also been characterized from I-V characteristics before and after the irradiation at varying temperature from LN₂ to room temperature. The current across the irradiated interface has increased by two orders of magnitude as compared to the unirradiated ones and show a nearly temperature independent behaviour. MR (magnetoresistance) has been studied from the current flow data in magnetic fields up to 10 kG. Unirradiated devices do not show any effect on current transport in external magnetic field. M-H characteristics of the irradiated devices show the typical magnetic behaviour of nano particles like superparamagnetic behaviour. The MR features has been related to the M-H variations. The observed results show the formation of magnetic nano grains due to interfacial intermixing in these devices of Ni/n-Si. The role of swift heavy ions for nano grain fabrication has been discussed and the observed properties have been understood by considering the formation of a nano magnetic granular phase.     

Ion irradiation effects on tungsten-oxide films and charge state effect on electronic erosion

We have studied electronic- and atomic-structure modifications of polycrystalline WO₃ films (bandgap of ∼3 eV) by ion irradiation. WO₃ films were prepared by oxidation of W films on MgO substrates and of W sheets. We find disordering or amorphization, the lattice expansion of ∼1.5% and bandgap increase of 0.2 eV after 90 MeV Ni ion irradiation at ∼3 × 10¹² cm⁻². A broad peak of optical absorption appears around 1.6 μm by ion irradiation. We also find that the erosion yield by high-energy ions with the equilibrium charge exceeds 10⁴ and that the erosion yield under ion impact with non-equilibrium charge (90 MeV Ni⁺¹⁰) is ∼1/5 of that with the equilibrium charge (89 MeV Ni⁺¹⁹). Effects of depth dependence of the ion mean charge on the erosion yields are discussed. The erosion yield by low-energy ions is also presented.     

The first performance of the facility for testing ITER CC conductor short sample

A new facility had been set up to test the low temperature properties of the short sample of the small-size cable-in-conduit conductor (CICC). The facility consisted of the background magnet which could provide 7 T centric magnetic field, a 50 kA superconducting transformer which provided sample current, a 500 W/4.5 K helium refrigerator which produced both the liquid helium (LHe) and supercritical helium (SHe). An ITER CC conductor short sample was prepared and measured in this testing system. T_cs of 7.02 K (@4.1 T, 10 kA) and I_c of 8.9 kA (@4.1 T, 7.06 K) were measured.