SQLite数据库在雷达日志管理中的应用

SQLite数据库作为一种嵌入式实时内存数据库,具有简洁、高效等特点。在雷达日志管理这一特定需求背景中,基于SQLite的雷达嵌入式日志管理系统能够按不同日志类别实时记录每一部雷达的工作过程及完整的状态信息,并根据权限提供检索和统计功能,为装备的维护保障提供完整的信息服务。工程实践表明,使用SQLite数据库作为数据存储方案能够很好满足实际使用需求。     

电子战数字测试系统的设计方法

本文设计了一种电子战数字测试系统,对与电子战有网络接口关系的相关系统(设备)数据信息进行模拟,可模拟高密度大批量的雷达威胁目标信息,可检测电子战系统的反应时间以及信息处理、综合显示、数据融合等功能,解决了电子战系统因网络接口多、接口数据复杂导致的接口测试困难、系统检验缺乏手段等问题。     

网络雷达及其数据融合问题研究

网络雷达作为雷达与电子战一体化的新型综合电子信息系统,实现了雷达与电子战的技术一体、功能一体、情报一体和资源共享,是网络时代雷达与电子战系统发展的必然趋势.文章分析了网络雷达的系统组成,探讨了网络雷达数据融合需求,提出了基于数据融合树的网络雷达数据融合系统的体系结构设计.     

电子战系统仿真数据为设计与实现

介绍ＥＷ仿真数据库的设计和应用背景,说明在电子战系统仿真评估过程中数据库设计的地位和作用,分析了雷达电子战系统仿真数据库的功能、设计过程、内容和实现方法。     

基于软件无线电的多功能射频综合一体化设计

在研究国内外雷达、电子战、通信综合一体化技术的基础上,分析了雷达、电子战、通信功能特点及综合一体化带来的优势,提出了基于软件无线电的多功能射频综合一体化设计思路,然后阐述了综合一体化系统架构,给出了雷达、电子战、通信综合一体化方案,最后对综合一体化设计技术、超宽带射频技术、系统软件技术和系统资源管理等关键技术进行了重点讨论,为基于软件无线电的雷达、电子战、通信多功能综合射频系统具体设计提供了借鉴。     

机载雷达功率管理的应用

为适应当前装备更新换代,更好发挥作战效能,从雷达应用的角度研究了空战中有源干扰条件下的功率管理措施。以实训数据为基础,采用数值模拟方法,分析机载雷达功率管理对电子战侦收的影响,得出雷达“隐身”距离、雷达最大探测距离以及电子战最大侦收距离三者之间呈等比关系。在此基础上对比分析了雷达“隐身”距离与“烧穿”距离之间的关系,得出本机雷达具备明显信号隐身优势时应尽早采取功率控制措施,在均势状态下慎用甚至不用功率管理,以避免雷达同干扰对抗过程中丧失能量优势,导致抗干扰能力显著降低。研究结果为机载雷达使用提供一定的参考依据。     

电子战仿真器发展动向

现代战争中，以雷达为代表的电子技术在战术上起到了极为重要的作用，与此同时，作为对抗手段的电子干扰技术正越来越受到人们的重视。电子战仿真器的出现不仅为电子战装置的开发和性能评估提供了保证，也为电子战操作人员及专家的培训创造了极为有利的条件，本文主要国外电子战仿真器的最新发展动向。     

基于数据库的相控阵雷达数据组织与管理

数据的优化存储、高效管理和深入分析对于雷达系统性能的提高有着积极的影响.针对相控阵雷达数据的管理,提出一种以数据库为核心的相控阵雷达数据组织与管理方法,将数据的组织管理分为网络数据收发模块、本地数据录入模块,数据统计分析模块和数据库管理维护模块4个部分.4个模块依托于数据库,彼此之间没有依赖关系,能够独立发挥作用,既有利于功能的模块化开发,又便于数据的管理.     

网络数据库安全技术的研究与实现

网络数据库的主要作用就是为了存储一些有用的数据信息,同时它也是一个开放环境的信息仓库,管理着大量的数据信息,而这些数据信息的重要性也各不相同,有的是我们平时生活的一些点滴事件,也有可能是一些重要信息,甚至关乎一个人、一个国家的生死存亡。也正是因为如此,它无时无刻不受到各种形式和强度的安全攻击。而随着数据库管理技术和网络技术的高速发展,数据库的安全也开始受到网络维护人员的高度重视,为了能够保证数据库的安全,现在已经出现专门管理数据库安全的专业人员和岗位,关于这方面的研究也更加深入了。本文针对网络数据库安全技术进行研究分析。     

《雷达与探测技术动态》征稿启事

正《雷达与探测技术动态》创刊1998年,目前是中国电子学会无线电定位技术分会和中国电科38所合办的雷达高级科普及动态报道刊物。主要报道国外雷达、电子战等方面的最新技术发展动态和信息,办刊宗旨是为读者展示"及时的雷达动态,前沿的雷达理论,先进的雷达技术,最新的雷达装备"。读者范围包括从事雷达研究、生产、使用和管理的有关领导、专家、科研教学人员及部队用户。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.