Mechanical properties of SiOx gas barrier coatings on polyester films

This paper reports the impressive mechanical properties of 1 μm thick carbon-containing SiO_x gas barrier coatings, characterised using the uniaxial fragmentation test. Such coatings have been found to act as excellent barriers to water vapour permeation partly because they can be made so thick without stress induced cracking. The impressive mechanical properties are thought to be due in part to the high amount of carbon they contain, which gives them a more organic character, as well as the fact that they are deposited as a succession of thinner layers. The adhesion of the coatings to the polyester film is good in all cases, reflecting a high density of covalent bonding at the interface. Improvement of the mechanical properties of a SiO_x/PET composite can be achieved by altering the substrate. By replacing the PET with a heat-stabilised (HS) PET film, a HS film with an acrylate layer or PEN, it is found that the coating displays improved mechanical properties and adhesive strength (as well as barrier). This is thought to be due to the superior surface thermal and mechanical properties of these substrates. Deposition temperatures are at least 80 °C, which causes molecular motion at the surface of a plain PET film and creates defects in the SiO_x coating as it grows, making it more brittle and permeable to gas flow.     

Preparation, structure and electrical conductivity of the pyrochlore-type phase Sm2Zr2O7 codoped with bivalent magnesium and trivalent dysprosium cations

The pyrochlore-type phases with the compositions of SmDy_1−xMg_xZr₂O_7−x/2 (0 ≤ x ≤ 0.20) have been prepared by pressureless-sintering method for the first time as possible solid electrolytes. The structure and electrical conductivity of SmDy_1−xMg_xZr₂O_7−x/2 ceramics have been studied by the X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance spectroscopy measurements. SmDy_1−xMg_xZr₂O_7−x/2 (x = 0, 0.05, 0.10) ceramics exhibit a single phase of pyrochlore-type structure, and SmDy_1−xMg_xZr₂O_7−x/2 (x = 0.15, 0.20) ceramics consist of pyrochlore phase and a small amount of the second phase magnesia. The total conductivity of SmDy_1−xMg_xZr₂O_7−x/2 ceramics obeys the Arrhenius relation, and the total conductivity of each composition increases with increasing temperature from 673 to 1173 K. SmDy_1−xMg_xZr₂O_7−x/2 ceramics are oxide-ion conductors in the oxygen partial pressure range of 1.0 × 10⁻⁴ to 1.0 atm at all test temperature levels. The highest total conductivity value is about 8 × 10⁻³ S cm⁻¹ at 1173 K for SmDy_1−xMg_xZr₂O_7−x/2 ceramics.     

Ion beam energy effects on structure and properties of SiOx doped diamond-like carbon films

SiO_x doped diamond-like carbon (DLC) films were synthesized by direct ion beam from hexamethyldisiloxane vapor. Effects of ion beam energy were studied. Variation of atomic concentration of the oxygen versus carbon with ion energy has been observed. Raman scattering spectroscopy didn’t indicate essential changes in structure of the films deposited at different ion beam energies. The synthesized films were atomically smooth. Depending on the ion energy the refractive index of the SiO_x doped diamond-like carbon films varied within 2.1-2.5 and increased with increase of energy. The contact angle with water for all samples was only 61-64°.     

1173 K下Al-8Si二元合金对MgO、TiO2 和不锈钢的润湿作用

采用改良座滴法对Al-8Si/不锈钢、Al-8Si/MgO和Al-8Si/TiO₂体系的润湿性和界面组织进行了研究。从热力学角度讨论了3个体系界面反应产物的形成。结果表明,Al-8Si/不锈钢的界面组织由Fe(Al,Si)₃、Al_7.2Fe_1.8Si和Fe₂Al₅相组成,而Al-8Si/MgO和Al-8Si/TiO₂体系的界面组织主要由不同形貌Al₂O₃相组成。3种体系的润湿性测试结果表明,Al-8Si熔体在MgO上具有较好的非润湿性能,其平衡润湿角为124°。3种体系润湿性的差异主要与界面产物的性质和粗糙度有关。界面粗糙度测试结果表明,Al-8Si/MgO体系界面粗糙度最大,为1.46μm,主要原因是界面反应过程中Mg的蒸发破坏了界面反应层的形貌,此外Ti的存在促进了Al-8Si/TiO₂体系的界面反应,增加了界面反应层的厚度,降低了平衡润湿角。     

Synthesis of Ti3SiC2 by infiltration of molten Si

High-purity Ti₃SiC₂ compounds have been fabricated by infiltration of molten Si into a precursor, a partially sintered TiC_x (x = 0.67) preform. The Si source and the TiC_x preform were placed side by side on carbon cloth, and the system was heated to 1550 °C. Molten Si infiltrated the preform through the carbon cloth, and a direct reaction between TiC_x and molten Si immediately occurred at the reaction temperature to yield pure Ti₃SiC₂. We could observe phase formation and the microstructure of the bulk products with time, which were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) equipped with energy-dispersive spectroscopy (EDS). Pure Ti₃SiC₂ compounds were formed on the exterior of the TiC_x preform at 1550 °C when the sintered TiC_x:Si ingot molar ratio was 3:1.4. At 1550 °C, no other minor phases were detected for any of the sintering time ranges.     

Synthesis and characterization of nanocrystalline ZrNxOy thin films on Si by ion plating

Based on the optimum deposition conditions of ZrN thin film from our previous study, by varying oxygen flow rate ranging from 0 to 8 sccm, nanocrystalline ZrN_xO_y thin films were deposited on p-type (100) Si substrates using hollow cathode discharge ion-plating (HCD-IP) system. The objective of this study was to investigate the effect of oxygen content on the composition, structure and properties of the ZrN_xO_y thin films. The oxygen content of the thin film, determined using X-ray photoelectron spectroscopy (XPS), increased with increasing oxygen flow rate. As the oxygen content increased, the color of the ZrN_xO_y thin film changed from golden yellow to blue and then slate blue, and the microstructure observed by scanning electron microscopy (SEM) varied from columnar structure to finer grains and finally flat and featureless structure. Phase separation of ZrN_xO_y to ZrN and monoclinic ZrO₂ was found from X-ray diffraction (XRD) patterns when the oxygen content was higher than 9.7 at.%. The hardness of the film slightly increased as the oxygen content was less than 9.7% and then decreased to 15.7 GPa, a typical hardness of ZrO₂ phase, as the oxygen content further increased. The total residual stress of the film was measured using an optical method, and the residual stresses of ZrN and ZrO₂ phases were determined separately using modified XRD sin²ψ method. The total stress was close to the stress in ZrN phase as the ZrO₂ fraction was less than 30%, and was close to that in ZrO₂ phase as the ZrO₂ fraction was over 30%. The electrical resistivity of the film increased significantly with the increase of oxygen content. The film properties showed consistent trend with phase separation. As the fraction of ZrO₂ phase was small, the apparent properties of the films were more close to those in ZrN. When ZrO₂ fraction was over 30%, the films mainly exhibited the properties of ZrO₂.     

Structural, morphological and optical properties of Bi2−xSbxSe3 thin films grown by electrodeposition

Ternary single-phase Bi_2−xSb_xSe₃ alloy thin films were synthesized onto Au(1 1 1) substrates from an aqueous solution containing Bi(NO₃)₃, SbCl₃, and SeO₂ at room temperature for the first time via the electrodeposition technique. The electrodeposition of the thin films was studied using cyclic voltammetry, compositional, structural, optical measurements and surface morphology. It was found that the thin films with different stoichiometry can be obtained by controlling the electrolyte composition. The as-deposited films were crystallized in the preferential orientation along the (0 1 5) plane. The SEM investigations show that the film growth proceeds via nucleation, growth of film layer and formation of spherical particles on the film layer. The particle size and shape of Bi_2−xSb_xSe₃ films could be changed by tuning the electrolyte composition. The optical absorption spectra suggest that the band gap of this alloy varied from 0.24 to 0.38 eV with increasing Sb content from x = 0 to x = 0.2.     

Microstructure and mechanical properties of laminated ZrB2-SiC ceramics with ZrO2 interface layers

Laminated ZrB₂-SiC ceramics with ZrO₂ interface layers were successfully prepared by tape casting, laminating and hot pressing. The flexural strength and fracture toughness are 561 ± 20 MPa and 14.4 ± 0.3 MPa m^1/2 for parallel direction, and 432 ± 18 MPa and 5.8 ± 0.3 MPa m^1/2 for perpendicular direction. The fracture toughness for parallel direction is improved significantly compared to monolithic ZrB₂-SiC ceramics. The toughening mechanism was attributed to the deflection and branch of the crack and the new microcracks, which would increase the propagation path and fracture work.     

Studies on the power factor of (Ba,Sr)Co2+xRu4−xO11 compounds

We have prepared polycrystalline single-phase ACo_2+xRu_4−xO₁₁ (A = Sr, Ba; 0 ≤ x ≤ 0.5) using the ceramic method and we have studied their structure, electrical resistivity and Seebeck coefficient, in order to estimate their power factor (P.F.). These layered compounds show values of electrical resistivity of the order of 10⁻⁵ Ωm and their Seebeck coefficients are positive and range from 1 μV K⁻¹ (T = 100 K) to 20 μV K⁻¹ (T = 450 K). The maximum power factor at room temperature is displayed by BaCo₂Ru₄O₁₁ (P.F.: 0.20 μW K⁻² cm⁻¹), value that is comparable to that shown by compounds such as SrRuO₃ and Sr₆Co₅O₁₅.     

Synthesis and photoluminescence properties of color-tunable BaLa2WO7:Eu phosphor

Color-tunable phosphors BaLa_2−xEu_xWO₇ were synthesized via a solid-state reaction. The absorption, excitation, emission and decay curves were obtained to study the luminescence properties. The experimental results indicate that BaLa_2−xEu_xWO₇ phosphors have two regions in the excitation spectra: one is assigned to the charge-transfer state (CTS) band at about 338 nm, and the other is assigned to the intra-4f transitions at 360-600 nm. The emission spectra of BaLa_2−xEu_xWO₇ phosphors excited at 395 nm exhibit a series of sharp peaks, which are attributed to the ⁵D₀ → ⁷F_J (J = 0, 1, 2, 3, 4) transitions. Luminescence from higher excited states, such as ⁵D₁, ⁵D₂, and ⁵D₃, were also observed at low Eu³⁺ concentration. The optimal emission intensity of ⁵D₀ → ⁷F₂ red emission is at x = 0.4 (BaLa_1.6Eu_0.4WO₇). The chromaticity coordinates of BaLa_2−xEu_xWO₇ phosphors vary with Eu³⁺ content from white, orange-red, to red, making it a candidate for a white-light-emitting phosphor in UV-LEDs.     

Phase, structural, and magnetocaloric properties of high temperature annealed LaFe11.6Si1.4BX

The phase relation, microstructural, hysteresis, Curie temperature, and magnetocaloric effects of LaFe_11.6Si_1.4B_x (x = 0.1, 0.2, 0.3, 0.4, and 0.5) prepared by arc-melting and then annealed at 1373 K (1.5 h) + 1523 K (5 h) were investigated. It was found that the main phase is NaZn₁₃-type phase, the impurity phases include α-Fe, Fe₂B, and small amount of La₅Si₃. The boron atom can dissolve into the crystal lattice of LaFe_11.6Si_1.4B_x to form interstitial solid solution, but the content of solid solution is not up to x = 0.5. For LaFe_11.6Si_1.4B_x (x = 0.1, 0.3, and 0.5) compounds, the Curie temperature T_C increases from 190.6 to 198.3 K with the increasing of B content from x = 0.1 to 0.5. The first order magnetic transition behavior becomes weaker and magnetic entropy change ΔS_M (T, H) drops with the increasing of B content, respectively. However, ΔS_M (T, H) still remains a large value, 11.18 J/kg K, when x reaches to 0.5 at 0-2 T. An attractive feature is that both thermal and magnetic hysteresis can be reduced remarkably by introducing B. The maximum magnetic hysteresis loss near T_C drops from 22.52 to 4.95 J/kg when the content of B increases from x = 0.1 to 0.5.     

Preparation, structure and photoluminescence of nanoscaled-Nd: Lu3Al5O12

Nd:Lu₃Al₅O₁₂ (Nd:LuAG) nano-crystalline was synthesized by co-precipitation method. Its phase transformation, structure, absorption and photoluminescence properties were studied. The Nd:LuAG polycrystalline phase is formed above 900 °C and its particle sizes are in the range of 18-36 nm. The structure of Nd:LuAG was refined by Rietveld method. The lattice parameters and the distortion of Lu³⁺-O²⁻ polyhedron in Nd:LuAG are larger than that of in pure LuAG. Because the distortion of Lu³⁺-O²⁻ polyhedron is larger than that of Y³⁺-O²⁻ polyhedron in YAG and the distance of Lu³⁺-O²⁻ is smaller than that of Y³⁺-O²⁻ in YAG, Nd³⁺ in LuAG experiences a stronger crystal field effect, which is proved by the crystal field strength and the chemical environment parameter. The absorption spectrum shows that Nd:LuAG has a broad absorption band at 808 nm with FWHM above 6 nm, which is favorable for improving laser efficiency. The fluorescence lifetime from ⁴F_3/2 → ⁴I_11/2 transition is 320 μs and longer than that of Nd:YAG. The longer lifetime is propitious to energy storage. The emission cross section at 1064 nm is 2.89 × 10⁻¹⁹ cm², taking into account the Boltzmann distribution of the excited state. The emission cross section in Nd:LuAG is also larger than that of Nd:YAG, which is useful for laser operation. All results indicate that Nd:LuAG is a promising crystal material to apply in high energy lasers.     

Resistivity, thermopower, and thermal conductivity of nickel doped compounds Cr1−xNixSb2 at low temperatures

Substitutional compounds Cr_1−xNi_xSb₂ (0 ≤ x ≤ 0.1) were synthesized, and the effect of Ni substitution on transport and thermoelectric properties of Cr_1−xNi_xSb₂ were investigated at the temperatures from 7 to 310 K. The results indicated that the magnitudes of the resistivity and thermopower of Cr_1−xNi_xSb₂ decreased greatly with increasing Ni content at low temperatures, owing to an increase in electron concentration caused by Ni substitution for Cr. Experiments also showed that the low-temperature lattice thermal conductivity of Cr_1−xNi_xSb₂ decreased substantially with increasing Ni content due to an enhancement of phonon scattering by the increased number of Ni atoms. As a result, the figure of merit, ZT, of lightly doped Cr_0.99Ni_0.01Sb₂ was improved at T > ∼230 K. Specifically, the ZT of Cr_0.99Ni_0.01Sb₂ at 310 K was approximately ∼29% larger than that of CrSb₂, indicating that thermoelectric properties of CrSb₂ can be improved by an appropriate substitution of Ni for Cr.     

Microstructural and photocatalytic properties distribution of TiO2 coatings reactively sputtered as a function of the substrate position relatively to the Ti target

Amorphous and porous TiO₂ coatings were deposited by reactive magnetron sputtering at high pressure (3.4 Pa) on cold soda-lime glass placed at different positions relatively to the magnetron target, which corresponds to different impingement angles and target-to-substrate distances. The as-deposited coatings were heated at 450 °C under ambient air to crystallise into the photoactive anatase phase. The structural analyses combined with AFM experiments have shown a reduction of the crystallites and the lateral grain size with the removal of the substrate from the target axis inducing a specific area rise. Moreover, the stress state is all the less as compressive as the substrates are far away from the target. As a result, the photocatalytic properties are improved with the decrease of the incidence angle and with the target-to-substrate distance rise.     

Thermoelectric properties of Bi2SexTe3−x prepared by Bridgman method

Bi₂Se_xTe_3−x crystals with various x values were grown by Bridgman method. The electrical conductivity, σ, was found to decrease with increasing Se content. The highest σ of 1.6 × 10⁵ S m⁻¹ at room temperature was reached at x = 0.12 with a growth rate of 0.8 mm h⁻¹. The Seebeck coefficient, S, was less dependent on Se content, all with positive values showing p-type characteristics, and the highest S was measured to be 240 μV K⁻¹ at x = 0.24. The lowest thermal conductivity, κ, was 0.7 W m⁻¹ K⁻¹ at x = 0.36. The electronic part of κ, κ_el, showed a decrease with increasing Se content, which implies that the hole concentration as the main carriers was reduced by the addition of Se. The highest dimensionless figure of merit, ZT, at room temperature was 1.2 at x = 0.36, which is attributed to the combination of a rather high electrical conductivity and Seebeck coefficient and low thermal conductivity.     

Mechanical and electrical properties of In-Bi solder at Bi2212 superconductor interface with annealed Ag spray layers and Ag precoating layers

The electrical properties of solder contact layers between Cu-Ni shunt metal and tube type Bi₂₂₁₂ superconductor that is applied in superconducting fault current limiter were studied. The contact properties of the solders are improved not only by Ag precoating layers, but also by the pre-sprayed Ag layer and subsequent Ag precoating layers. The annealed Ag sprayed layers onto Bi₂₂₁₂ superconductor prior to Ag electroplating work as protecting layers for the superconductor from plating solutions. The contact angle of the electroplated Ag layer is 42.91° and decreases to 15.25° and 5.88° with Ag sprayed layer and additional Ag electroplated layers. The Ag sprayed layer with suitable annealing prior to Ag electroplating improves contact strength of the Ag electroplated layer by about 12% due to denser microstructure of the Ag electroplated layers.     

Mechanical properties and corrosion resistance of nanocrystalline ZrNxOy coatings on AISI 304 stainless steel by ion plating

Transition metal oxynitrides have become emerging decorative coating materials due to their adjustable coloration and high hardness and corrosion resistance. This research studied the effect of oxygen content on the coloration, mechanical properties and corrosion resistance of ZrN_xO_y thin films deposited on AISI 304 stainless steel using hollow cathode discharge ion plating (HCD-IP). The Zr/N/O ratios of the ZrN_xO_y films were determined using X-ray photoelectron spectroscopy (XPS). The color of the ZrN_xO_y thin film changed from golden yellow to blue and then slate blue with increasing oxygen content. X-ray diffraction (XRD) patterns revealed that phase separation of ZrN and m-ZrO₂ occurred as the oxygen content reached 31.2 at.%. ZrN(O) (ZrN with dissolving oxygen) is dominant at oxygen content less than 18.1 at.%, while m-ZrO₂ phase was prevailed at oxygen content above 40.3 at.%. Phase separation lowered the hardness of the ZrN_xO_y films as the fraction of ZrO₂ was less than 40%. The residual stresses in ZrN phase was higher than that in ZrO₂, and the residual stress decreased for the specimen containing 30 to 37% ZrO₂. For the samples containing more than 44% ZrO₂, the average residual stress was close to that in ZrO₂ phase. The corrosion resistance was evaluated by salt spray test and potentiodynamic scan in two solutions: 0.5MH₂SO₄ + 0.05 M KSCN and 5% NaCl solutions. The results showed consistent trend in the two solutions. From the results of potentiodynamic scan, corrosion resistance increased as the packing density of the film increased, whereas the film thickness was not a crucial factor on corrosion current; moreover, the electrical conductivity of the film may be one of the significant factors in corrosion resistance. Results of salt spray tests suggested that the corrosion of ZrN_xO_y in NaCl may play an important role in corrosion resistance.     

Tunable dielectric properties of BaZr0.2Ti0.8O3-Mg2SiO4-MgO composite ceramics

BaZr_0.2Ti_0.8O₃-Mg₂SiO₄-MgO composites were prepared by a solid-state reaction method, and their dielectric and tunable characteristics were investigated for the potential application as microwave tunable materials. It is observed that the addition of Mg₂SiO₄-MgO into BaZr_0.2Ti_0.8O₃ form ferroelectric (BaZr_0.2Ti_0.8O₃)-dielectric (Mg₂SiO₄-MgO) composites. The dielectric constant and loss tangent of BaZr_0.2Ti_0.8O₃-Mg₂SiO₄-MgO composites have been reduced and the overall tunability is maintained at a sufficiently high level. An anomalous relation between dielectric constant and tunability was observed: with the increase of Mg₂SiO₄ content (>30 wt%), the dielectric constant of composite decreases and the tunability increases. The anomalous increased tunability can be attributed to redistribution of the electric field. BaZr_0.2Ti_0.8O₃-Mg₂SiO₄-MgO composites have tunability of 14.2-17.9% at 100 kHz under 2 kV/mm, indicating that it is a promising candidate material for tunable microwave applications requiring low dielectric constant.     

Electrical properties of binder-free thick film BaYxBi1−xO3 NTC thermistors

The microstructure and electrical properties of BaY_xBi_1−xO₃ thick film negative temperature coefficient thermistors, fabricated by screen printing, were investigated. The sintered thick films were the single-phase solid solutions of the BaY_xBi_1−xO₃ compounds with a monoclinic structure. The added Y₂O₃ led to a significant decrease in the grain size of the thermistors. The resistivity and coefficient of temperature sensitivity for the BaY_xBi_1−xO₃ (0 ≤ x ≤ 0.15) thick film NTC thermistors decreased first with increasing x in the range of x < 0.04 and then increased with further increase in x.     

First principles study of structural, electronic and magnetic properties of Mg1−xMnxTe alloys

Density functional FP-LAPW + lo calculations have been performed to study the structural, electronic and magnetic properties of Mg_1−xMn_xTe for compositional parameter x = 0.25, 0.50, 0.75 and 1. Our calculations reveal the occurrence of ferromagnetism in these compounds in which the transition-metal atom is ordered in a periodical way thereby interacting directly with the host atoms. Results extracted from electronic band structure and density of states (DOS) of these alloys show the existence of direct energy band gap for both majority- and minority-spin cases, while the total energy calculations confirm the stability of ferromagnetic state as compared to anti-ferromagnetic state. The total magnetic moment for Mg_1−xMn_xTe for each composition is found to be approximately 5 μ_B, which indicates that the addition of Mn content does not affect the hole carrier concentration of the perfect MgTe compound. Moreover, the s-d exchange constant (N₀α) and p-d exchange constant (N₀β) are also calculated which are in accordance with a typical magneto-optical experiment. The estimated spin-exchange splitting energies originated by Mn 3d states energies, i.e. Δ_X(s-d) and Δ_X(p-d), show that the effective potential for minority-spin is more attractive than that of the majority-spin. Also, the p-d hybridization is found to cause the reduction of local magnetic moment of Mn and produce small local magnetic moments on the nonmagnetic Mg and Te sites.