磁控溅射法制备SnS薄膜的结构和光学性能

利用磁控溅射法在FTO玻璃上制备了Sn S薄膜。采用X射线衍射仪、扫描电子显微镜和紫外可见分光光度计对不同溅射参数下制备的Sn S薄膜的晶体结构、表面形貌和光学性能进行研究,确定出制备Sn S薄膜的最优溅射参数。结果表明:溅射功率为28 W,沉积气压在2.5 Pa时,制备出的Sn S薄膜在(111)晶面具有最好的择优取向,薄膜微观形貌呈单片树叶状,晶粒粒径约370 nm,晶粒分布均匀,薄膜表面光滑致密;最优溅射参数下制备的Sn S薄膜的吸收系数可达到105cm-1,比其他方法制备的Sn S薄膜的吸收系数值高,禁带宽度为1.48 e V,与半导体太阳能电池所要求的最佳禁带宽度(1.5 e V)十分接近。     

Influence of nitrogen gas on structure and properties of DLC films prepared by XeCl pulsed laser deposition

Diamond-like carbon （DLC） films were prepared by PLD process using 308 nm（XeCl） laser beam with high power （500 W） and high fi＇equency（300 Hz）. The effects of nitrogen pressure on the structure and properties of the DLC films under such extremely high power and repetition rate were studied. The results indicate that the microstructures of the films are varied fi＇om amorphous carbon to graphitized carbon in long-order with the increase of N2 pressure, and the optical properties of the films are deteriorated as compared to that of DLC films without nitrogen.     

Effect of nitrogen pressure on structure and optical properties of pulsed laser deposited BCN thin films

Amorphous boron carbon nitride (BCN) thin films were deposited on Si (100) and quartz substrates by laser ablation of a boron carbide (B₄C) target in nitrogen atmosphere. The effects of the nitrogen pre ssure (p_N2) on the film deposition rate, composition, structure and optical properties were investigated. The film deposition rate was measured by a surface profiler, which increased from 3.4 to 6.25 nm/min at elevated p_N2. Structure and composition of the films were investigated by X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared (FTIR) spectroscopy. FTIR and XPS analyses indicated that the as-deposited BCN films contained B-C, N-C and B-N chemical bonds, implying the formation of ternary BCN compounds. The nitrogen content in the films increased gradually and then saturated up to ∼ 26 at.% at 10 Pa p_N2. The optical band gap (E_g) increased from 3.78 to 3.92 eV with increasing p_N2 from 2 to 15 Pa. The evolution of E_g is in accordance with the change of film compositions and bonding states.     

磁控溅射TiO2薄膜的相结构转变温度

利用射频磁控溅射制备了TiO2致密薄膜,并通过退火处理实现TiO2的相转变,采用扫描电镜,X射线衍射等手段对薄膜相结构进行表征并做了详细的分析,结果表明,退火后TiO2薄膜结构致密,表面呈现出大小均匀的纳米晶粒。400 ℃退火时,TiO2薄膜为单一的锐钛矿相,500～600 ℃退火时为锐钛矿和金红石混合相,700 ℃以上退火时则完全转变为金红石相。     

Microstructure and magnetic properties of NiZn ferrite thin films prepared by sol-gel method

Ti^4＋ substitution for Fe^3＋ in Ni0.5Zn0.5Fe2O4 （NZF） ferrite thin films were realized by sol-gel method and annealing at 600℃for 30 min in the air. Crystal structure and lattice constant determination was performed by X-ray diffractometer （XRD）. Surface microstructure was observed by scanning electron microscope （SEM） and atomic force microscope （AFM）, and the magnetic properties were measured by vibrating sample magnetometer （VSM）. XRD analyses of the samples show that Ni0.5＋xZn0.5TixFe2-2xO4 （NZTF） films with x varing from 0 to 0.15 in steps of 0.05 are composed of single phase with spinel structure. And the lattice parameter, particle size and the diffraction intensity of the films increase with substitution of Ti as the result of the larger radius ions entering the lattice. SEM and AFM show homogeneous grain size of each sample, but there is a few differences in grain size with different Ti-substitution contents. As the nonmagnetic Ti^4＋ substitutes Fe^3＋, both the saturation magnetization and coercivity decrease.     

Effect of Ru addition on the properties of Al-doped ZnO thin films prepared by radio frequency magnetron sputtering on polyethylene terephthalate substrate

The addition of ruthenium in aluminum-doped zinc oxide transparent conducting thin films was deposited on polyethylene terephthalate at 20 °C by radio frequency magnetron sputtering technique. The structure and electrical properties of the films were investigated with respect to variation of Ru concentration. The XRD and FESEM results show that the film with 0.5 wt% Ru doping has the best crystallinity and larger pyramid-like grains, therefore the resistivity reached to a lowest value of 9.1 × 10⁻⁴ Ωcm. The low carrier mobilities of the films (3–7.2 cm² V⁻¹ s⁻¹), however, were limited by ionized impurity scattering and grain boundary scattering mechanisms since the carrier concentrations were ranged from 2.2 × 10²⁰ to 9.5 × 10²⁰ cm⁻³. The transmittance in the visible is greater than 80% with the optical band gap in the order of 3.352–3.391 eV.     

Photoluminescence properties of ZnSe/SiO2 composite thin films prepared by sol-gel method

ZnSe/SiO2 composite thin films was prepared by sol-gel method. XRD results indicate the phase structure of ZnSe particles embedded in ZnSe/SiO2 composite thin films is sphalerite （cubic ZnS）. Spectroscopic ellipsometers were used to investigated the dependences of ellipsometric angle with wavelength of ZnSe/SiO2 composite thin films. The optical constant, thickness, porosity and the concentration of ZnSe of ZnSe/SiO2 thin composite films were fitted according to Maxwell-Garnett effective medium theory. The thickness of ZnSe/SiO2 composite thin thin films was also measured through surface profile. The photoluminescence properties of ZnSe/SiO2 thin composite thin films was investigated through fluorescence spectrometer. The photoluminescence results show that the emission peak at 487 nm （2.5 eV） is excited at 395 nm corresponds to the band-to-band emission of sphalerite ZnSe crystal（2.58 eV）. The strength free exciton emission and other emission peaks correlating to ZnSe lattice defect were also observed.     

衬底温度对Fe-N薄膜结构、形貌及磁性能的影响

采用直流磁控溅射方法,以Ar和N2作为放电气体,在单晶Si(100)衬底上沉积了Fe-N薄膜.采用X射线衍射仪(XRD)、X射线光电子能谱分析仪(XPS)、原子力显微镜(AFM)和超导量子干涉仪(SQUIDS)对所制备的样品进行了结构、成分、形貌和磁性能分析,研究了衬底温度对薄膜的结构、形貌和磁性能的影响.结果表明:衬底温度对Fe-N薄膜的结构有重要的影响,通过控制衬底温度可以获得单相γ′-Fe4N化合物薄膜;γ′-Fe4N具有较高的饱和磁化强度,是非常有应用前景的磁记录介质及磁头功能材料.     

Properties of nanostructured cubic boron nitride films prepared by the short-pulse laser plasma deposition techniques

Nanostructured cubic boron nitride (BN) films were synthesized on molybdenum substrates by using the short-pulse laser plasma deposition techniques. The surface morphologies, chemical compositions, bond structures, and mechanical properties of the obtained BN thin films have been investigated by scanning electron microscopy, Raman scattering, Fourier transform infrared spectroscopy (FTIR), energy dispersive spectra, and hardness measurements. High power density laser deposition yielded boron-rich BN nanorod arrays where tBN component dominates. Reducing power density down to 8 × 10⁷ W/cm² during laser plasma deposition produced flat cBN thin films. Typical TO and LO bands in the Raman and FTIR spectra of the cBN samples were identified. The cBN sample with hardness up to 40 GPa was obtained.     

Effect of substrate rotation speed on structure and properties of Al-doped ZnO thin films prepared by rf-sputtering

Al-doped ZnO (AZO) thin films were deposited on glass substrates by rf-sputtering at room temperature. The effects of substrate rotation speed (ω_S) on the morphological, structural, optical and electrical properties were investigated. SEM transversal images show that the substrate rotation produces dense columnar structures which were found to be better defined under substrate rotation. AFM images show that the surface particles of the samples formed under substrate rotation are smaller and denser than those of a stationary one, leading to smaller grain sizes. XRD results show that all films have hexagonal wurtzite structure and preferred c-axis orientation with a tensile stress along the c-axis. The average optical transmittance was above 90% in UV-Vis region. The lowest resistivity value (8.5×10^?3 Ω·cm) was achieved at ω_S=0 r/min, with a carrier concentration of 1.8×10²⁰ cm^?3, and a Hall mobility of 4.19 cm²/(V·s). For all other samples, the substrate rotation induced changes in the carrier concentration and Hall mobility which resulted in the increasing of electrical resistivity. These results indicate that the morphology, structure, optical and electrical properties of the AZO thin films are strongly affected by the substrate rotation speed.     

SnS / ZnO 叠层太阳能电池的制备及性能研究

目的获得光电性能较佳的Sn S/Zn O叠层太阳能电池。方法通过磁控溅射法,采用不同的溅射参数在FTO玻璃上制备Sn S和Zn O薄膜,研究Sn S和Zn O薄膜的晶体结构、表面形貌和光学性能,最终获得制备叠层太阳能电池的最佳方案。结果沉积Sn S薄膜的溅射功率、沉积时间、工作气压为28W,40 min,2.5 Pa和36 W,25 min,2.3 Pa时,获得的两种Sn S薄膜均在(111)晶面具有良好的择优取向,晶粒较大,表面致密光滑,禁带宽度分别为1.48,1.83 e V。沉积Zn O薄膜的溅射功率、溅射时间、工作气压为100 W,10 min,2.5 Pa时,Zn O薄膜的结晶性能更优,透过率更大,适合作为太阳能电池的n层。以宽禁带Sn S(1.83 e V)为外p型吸收层,窄禁带宽度Sn S(1.48 e V)为内p型吸收层制备的FTO/n-Zn O/p-Sn S(1.83 e V)/n-Zn O/p-Sn S(1.48 e V)/Al叠层太阳能电池,其光电转化效率为0.108%,短路电流为0.90 m A,开路电压为0.40 V。结论制得的叠层太阳能电池性能较传统单层太阳能电池更优。     

The effect of multilayer structure on magnetic properties of FePt thin films

The Fe/Pt multilayer films with different structures were deposited by RF magnetron sputtering on glass substrates, and the L1₀-FePt films were obtained after theas-deposited samples were subjected to vacuum annealing at various temperatures. Results show that the Fe/Pt multilayer structure can effectively reduce the ordering temperature of FePt film, and the in-plane coercivity of [Fe (5.2 nm)/Pt (5.2 nm)]₇ multilayers can reach 161.2 kA/m after annealed at 350 ℃ for 30 min. When Fe and Pt layer thickness is equal, the coercivity of the film is the largest. On the other hand, the different Fe-Pt crystalline phases such as Fe₃Pt and FePt₃ phases are formed after annealing when the thickness ratio of Fe/Pt deviates from 1 after annealing. When Fe and Pt have the same thickness, the thinner single layer gets the lower ordering temperature and the larger coercivity.     

Effect of the PbOx thickness on the microstructure and electrical properties of PLT thin films prepared by RF magnetron sputtering

The (Pb_0.90La_0.10)Ti_0.975O₃ (PLT) thin films with different thicknesses of PbO_x buffer layers were deposited on the Pt(111)/Ti/SiO₂/Si(100) substrates by RF magnetron sputtering technique. The PbO_x buffer layer leads to the (100) orientation of the PLT thin films. Effects of the PbO_x thickness on the microstructure and electrical properties of the PLT thin films were investigated. The experimental results show that the PbO_x thickness plays an important role on the orientation, phase purity, domain structure, and electrical properties of the PLT thin films. The PLT thin films with proper PbO_x thickness possess highly (100) orientation, high phase purity, strong intensity of out of plane polarization, and good electrical properties. It is concluded that the PbO_x thickness between PLT thin films and Pt coated Si substrate is very critical to obtain good electrical properties.     

High purity boron nitride thin films prepared by the PDCs route

Hexagonal boron nitride (h-BN) thin films (< 10 μm) were successfully obtained on various substrates (graphite-standard and HOPG, quartz and SiC) using the preceramic polymer route. Thin films were formed using precursor solutions of poly(2,4,6-trimethylamino)borazine (polyMAB) as a source of BN. Various preparation conditions were used (i.e. solvent, precursor nature and concentration, substrate and deposition method) and their impact on final BN film quality measured. Surface morphology was observed by Scanning Electronic Microscopy (SEM) and Atomic Force Microscopy (AFM). Presence of BN material was confirmed by infrared and Raman spectroscopies and the structure observed by High Resolution Transmission Electronic Microscopy (HRTEM). The chemical composition of samples analyzed by X-ray Photoelectron Spectroscopy (XPS) gives a B/N ratio close to 1. Boron nitride films were also prepared using borazine (B₃N₃H₆) as precursor. Initial results are presented and compared with those obtained from polyMAB solutions.     

射频反应磁控溅射制备氮化铜薄膜

使用射频反应磁控溅射法,在不同的射频功率和气体流量比下制备了氮化铜薄膜,并用X射线衍射仪和原子力显微镜对薄膜的结构进行表征。研究结果表明:薄膜呈现择优生长规律,由低气体流量比的Cu3N(111)晶面转向高分压的(100)面;薄膜的光学带隙在1.44～1.69eV之间,电阻率在60～5.6×105Ω.m之间,二者都随气体流量比的增大而增大。     

Effects of ZrO2 on the structure and magnetic properties of CoPt thin films

[CoPt 1.5 ml/ZrO2 xnm]10 multilayer films were deposited on glass substrates by magnetron sputtering and then annealed in vacuum at 600℃ for 30 min. Their structures and magnetic properties were investigated as a function of ZrO2 content. The results show that the grain size and coercivity first increase and then decrease with the increase in ZrO2 content. The maximum coercivity and grain size are obtained at 37 vol.% of ZrO2. The content of ZrO2 in the film plays an important role in the separation of CoPt grains and in the reduction of intergrain exchange interaction. On the basis of the studies of angular dependent coercivity, it is found that the magnetization reversal of CoPt films with （111 ） texture is different from either the domain wall motion or the S-W type of rotation mode.     

Effect of Cu additive on the structure and magnetic properties of (CoPt)1-xCux films

CoPt thin films with various Cu contents varying from 0 vol.% to 21.5 vol.% were deposited on glass substrates by magnetron sputtering. The effects of Cu additive on the structural and magnetic properties and the ordering temperature of CoPt films were investigated in detail. The results show that the Cu in CoPt films plays an important role in promoting the ordering parameter S and reducing the ordering tempera-ture of CoPt films. A nearly perfect (001) texture was obtained in a CoPt film doped with 15.3 vol.% Cu. Besides, the preferred orientation of the CoPt film can be changed by annealing temperature. The perpendicular growth of the CoPt film is favored at a high annealing tempera-ture.     

a-C:F:H films prepared by PECVD

Fluorinated amorphous hydrogenated a-C:F:H carbon thin films were deposited using radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) reactor with CF4 and CH4 as source gases and were annealed in a N2 atmosphere. The properties of these films were evaluated by FTIR spectrometry, UV-VIS spectrophotometry and single-wavelength spectroscopic ellipsometry. A correspondence relativity connection between the deposition rate and technology was found. The chemical bonding structures and the content of CHx and CFx in the films are transformed and the optical band gap decreases monotonically with increasing temperature after annealing.The dielectric constant is increased with decreasing content of F in the films and the optical band gap is decreased with decreasing the content of H in the film.     

Influence of post-grown treatments on CuInS2 thin films prepared by sulphurization of Cu-In films

Polycrystalline CuInS2 (CIS) films were prepared by sulphurization of Cu-In films.The surface morphology and phase composition of the as-grown film,the KCN-etched film,and the annealed KCN-etched film were investigated.During the sulphurization,the secondary CuχS phase segregated on the surface of the as-grown films.To improve the crystalline quality of CulnS2 films,a series of post-grown treatments,such as KCN-etching and vacuum annealing KCN-etched films,were performed on the as-grown films.Both as-grown and post-treated films were characterized by X-ray diffraction (XRD),scanning electron microscopy (SEM),and energy dispersive spectroscopy (EDS).The results indicated that a CuχS secondary phase segregated on the surface of the as-grown film,which could be removed effectively by KCN etching.After the vacuum annealing treatment,the KCN-etched film had a sphalerite structure with (112) preferred orientation.Meanwhile,the crstalline quality of the CIS film was significantly improved,which provided a novel method to improve the performance of thin film solar cells.     

热解温度对镧、锰共掺杂铁酸铋薄膜铁电性能的影响(英文)

在不同热解温度下,采用溶胶-凝胶法在Pt/Ti/SiO2/Si衬底上制备镧、锰共掺杂铁酸铋铁电薄膜Bi0.9La0.1Fe0.95Mn0.05O3(BLFMO)。利用热失重仪(TGA)分析BLFMO原粉的质量损失,用 X 射线衍射仪(XRD)和原子力显微镜(AFM)分析 BLFMO 薄膜的晶体结构和表面形貌。在热解温度为420℃时,得到BLMFO薄膜的剩余极化值为21.2μC/cm2,矫顽场为99 kV/cm,漏电流密度为7.1×10-3 A/cm2,说明薄膜在此热解温度下具有较好的铁电性能。