共查询到19条相似文献,搜索用时 108 毫秒
1.
提出了一种包括晶粒接种、高温退火、成核、生长四过程的薄膜沉积新方法,用射频率等离子体增强热丝化学气相沉积系统,在Ni衬底上制备了定向金刚石膜。通过对成核和生长两过程工艺条件的研究,掌握了提高成核密度和金刚石定向生长规律,实验还表明,膜与Ni衬底之间未见Ni-C-H界面层的形成。 相似文献
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本文研究了微波等离子体化学气相沉积制备金刚石薄膜的宏观控制参量对成核和生 长过程的影响.过高的碳源浓度、低的衬底温度不利于金刚石膜的生长.在金刚石膜的 成核和生长期采用不同的条件,生长出晶形较好的金刚石薄膜。 相似文献
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用直流电孤等离子体喷射法进行了多次沉积,在硅衬底上制备了金刚石厚膜,并用扫描电镜对这种厚膜的截面结构和表面状态进行分析,发现截面有明显的层状结构,在原来晶面上进行二次沉积是一个重新的成核过程。并对多次沉积过程中金刚石晶粒的生长特性进行了描述。 相似文献
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SiC在异质衬底生长金刚石膜的作用分析 总被引:2,自引:0,他引:2
利用扫描电子显微镜 (SEM)、Raman光谱分析了Si衬底上金刚石膜核化和生长的过程 ,并着重分析了核化过程产生的SiC的性能。利用划痕法测量了在WC衬底上沉积SiC和未沉积SiC时生长金刚石膜的粘附力 ,同时还分析了WC衬底上有和没有SiC沉积层时表面附近金刚石膜的内应力。结果表明 ,SiC层大大地增强了含碳粒子的聚集和金刚石膜与衬底之间的粘附性 ,降低了金刚石膜与衬底之间的内应力 相似文献
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MPCVD法在氧化铝陶瓷上的金刚石膜沉积及其成核分析 总被引:7,自引:0,他引:7
用微波等离子体化学气相沉积(MPCVD)法在氧化铝陶瓷基片上沉积了金刚石薄膜。实验表明,对基片进行适当的预处理,包括用金刚石研磨膏仔细研磨和沉积前原位沉积一层无定形碳层,可显著提高成核密度;对硅衬底和氧化铝基片上金刚石膜的成核过程进行了对比分析,并提出了提高氧化铝基片上沉积金刚石的成核的措施。 相似文献
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石英玻璃衬底在金刚石粉和丙酮形成的悬浮液中超声波预处理,有效提高了金刚石成核密度.在最佳预处理和热丝化学气相沉积条件下,成核密度高达1010 cm-2以上.采用HFCVD中四步法生长工艺,制备出了表面粗糙度小于10 nm、膜厚300 nm、晶粒直径100 nm~150 nm、致密、均匀、高质量和高光透射率的金刚石膜,其1 μm~5 μm波段的光透射率达74%~85%.金刚石膜与石英玻璃衬底结合牢固,膜中无裂纹. 相似文献
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利用扫描电子显微镜(SEM)、Raman光谱分析了Si衬底上金刚石膜核化和生长的过程,并着重分析了核化过程产生的SiC的性能。利用划痕法测量了WC衬底上沉积SiC和未沉积SiC时生长金刚石膜的粘附力,同时还分析了WC半底上有和没有SiC沉积层时表面附近金刚石膜的内应力。结果表明,SiC层大大地增强了含碳粒子的聚集和金刚石膜与衬底之间的粘附性,降低了金刚石膜与衬底之间的内应力。 相似文献
8.
以酒精为碳源,用热丝CVD法对不同表面状态的Al2O3衬底进行了金刚石薄膜沉积的比较,用扫描电镜,喇曼光谱和X射线衍射等方法检测了沉积出的金刚石膜的质量,并讨论了它们对成核和生长的影响。 相似文献
9.
使用纳米金刚石粉研磨工艺预处理硅片衬底抛光面,在低气压成核的条件下,以丙酮和氢气为反应物,采用传统的热丝辅助化学气相沉积法,制备了自支撑金刚石膜;通过射频磁控溅射法沉积氧化锌薄膜在自支撑金刚石膜的成核面,形成氧化锌/自支撑金刚石膜结构.通过光学显微镜、扫描电镜及原子力显微镜测试自支撑金刚石膜成核面的表面形貌.研究结果表明:成核期的低气压有助于提高成核密度,成核面表面粗糙度约为1.5 nm;拉曼光谱显示1334 cm-1附近尖锐的散射峰与金刚石SP3键相对应,成核面含有少量的石墨相,且受到压应力的作用;ZnO/自支撑金刚石膜结构的XRD谱显示,氧化锌薄膜有尖锐的(002)面衍射峰,是c轴择优取向生长的. 相似文献
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This paper presents a systematic study on diamond growth on copper by microwave plasma chemical vapour deposition (MPCVD). It includes the following four main parts. 1. Effect of substrate pre-treatment on diamond nucleation. 2. Effect of deposition conditions on diamond nucleation and growth. 3.Preparation of free-standing diamond films using copper substrate. 4. Adherent diamond coating on copper using an interlayer. In the first part we show that diamond nucleation on copper is strongly affected by the substrate pre-treatment. The residues of abrasives left in the surface of the copper substrate play an important role in the diamond nucleation. In the second part we show that the diamond growth rate increases with microwave power and gas pressure. The effect of the microwave power is mainly an effect of substrate temperature. Increasing methane concentration results in a higher nucleation density and higher growth rate, but at the cost of a lower film quality. Gas flow rate has little influence on the diamond nucleation density and growth rate. In the third part we demonstrate the possibility of preparing large area free-standing diamond films using copper substrate, which has nearly no carbon affinity and usually leads to weak adhesion of the diamond films. The normally observed film cracking phenomenon is discussed and a two-step growth method is proposed for stress release. In the fourth part we show that adherent diamond coating on copper can be obtained using a titanium interlayer. Residual stress in the films is evaluated by Raman spectroscopy. It is found that with increase in the film thickness, the diamond Raman line shifts from higher wave numbers to lower, approaching 1332 cm–1. The stress variation along the depth of the film is also analysed using Airy stress theory. 相似文献
13.
J. H. D. Rebello D. L. Straub V. V. Subramaniam E. K. Tan S. A. Dregia B. L. Preppernau T. A. Miller 《Materials and Manufacturing Processes》1991,6(3):501-520
Hot-filament Chemical Vapor Deposition is a simple and widely used technique for synthesis of diamond films on silicon substrates. Scratching or abrasion of the substrate surface with either diamond particles or diamond paste is a common practice, but often escapes mention in the reported literature. In such instances it is not clear whether the diamond film being grown is done so on diamond or tetrahedrally co-ordinated carbon nuclei left behind on the substrate. Attempts to address this issue must be made in order to facilitate a better understanding of the nucleation and growth processes. In this paper, various methods of physical abrasion, average size of scratch sites, as well as totally unscratched surfaces are examined both before and after growth of diamond using Raman spectroscopy and Scanning Electron Microscopy (SEM). These studies suggest that scratching of the surface with diamond particles is not strictly necessary, but does hasten nucleation. High scratch densities yield the most rapid growth. The average surface roughness rather than the material source of scratching appears to accelerate the nucleation process. This work underscores the importance of characterizing the substrate surface prior to any deposition. 相似文献
14.
一种提高金刚石薄膜形核密度的新方法 总被引:1,自引:0,他引:1
报导了一种提高火焰法合成高质量金刚石薄膜形核密度的新方法-化学腐蚀法;研究了在化学腐蚀试样表面上金刚石的形核与生长行为、晶粒度与形核密度之间的关系。试验表明:经腐蚀后的样品,金刚石形核均匀致密,2min内便能形成连续的膜。金刚石形核密度随晶粒度的增加而增大。初步分析了化学腐蚀法提高形核密度的原因,认为晶界对金刚石的形核起重要作用。 相似文献
15.
Meiguang ZHANG) Haiyan YAN) Fang PENG) ) 《材料科学技术学报》2008,24(5):809-812
Synthesizing diamond single crystal by diamond seed particles which were electroplated with nickel film as catalyst under high pressure and high temperature (HPHT) was described. The microstructure of nickel film after synthesis and morphology of grown diamond were investigated by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The phase structure in nickel film were graphite, NiC, Ni, and diamond structure hadn't been found. A lot of recrystallized graphite pits appear in interface between the inner surface of nickel film and the surface diamond. It is shown that the new-grown diamond was developed epitaxially on the crystal planes of seeds. Also, the new-grown diamond grew by two-dimensional nucleation and by a layer growth mechanism. The growth process of crystal was microaggregate→step→expansion→new crystal layers, and the flat growth interface transformed into a cellular interface at the same time. 相似文献
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采用循环伏安法和计时电流法研究了氨络合物体系中镍在玻璃碳上电结晶的初期行为。结果表明.镍在该基体上的沉积没有经历UPD过程,镍的电沉积经历了晶核形成过程,在所研究的外加电位范围内其电结晶按连续成核和三维生长方式进行,外加电位对晶体生长具有显著的影响。通过分析恒电位暂态曲线,求出镍离子的扩散系数D,以及不同外加电位下的饱和晶核数密度Nsat,探讨了外加电位对成核作用的影响。 相似文献
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微波等离子体化学气相沉积法在硅片上同时生长碳化硅和金刚石 总被引:1,自引:0,他引:1
研究了衬底温度、核化密度、衬底表而预处理等工艺参数对微波等离子体化学气相沉积法在硅片上同时生长碳化硅和金刚石的影响.采用扫描电镜、X-射线衍射、喇曼光谱和红外光谱对样品进行了表征.结果表明:从高核化密度生长的金刚石膜中探测不到碳化硅;不论对硅衬底进行抛光预处理还是未抛光预处理,从低核化密度牛长的金刚石厚膜中总能探测到碳化硅.碳化硅生长在硅衬底上未被金刚石覆盖的地方,或者是在金刚石晶核之间的空洞处.碳化硅形成和金刚石生长是同时发生的两个竞争过程.此研究结果为制备金刚石和碳化砟复合材料提供了一种新的方法. 相似文献
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预沉积无序碳对CVD金刚石成膜的增强作用 总被引:2,自引:1,他引:1
研究了热丝CVD系统中预沉积无定形碳对金属石成核的促进作用,分析了金 不管不顾民核的特征和机理,探索了无定形碳上金刚石成核的条件,并由此实现了YG8硬质合金上金刚石的成核和生长。 相似文献