半导体器件的长期贮存失效机理及加速模型

加速应力试验是评价长期贮存一次性使用半导体器件贮存可靠性的最重要途径之一.针对半导体器件不同的失效机理,选择合理、准确的加速应力模型,是定量分析半导体器件贮存寿命的基础.介绍了半导体器件在长期贮存时的主要失效机理及其加速应力模型,给出了这些模型的适用条件.     

半导体器件贮存可靠性快速评价方法

为解决复杂环境下半导体器件的贮存可靠性评估问题,结合半导体器件的贮存失效机理及其寿命-应力模型,提出了基于多贮存应力加速寿命试验的半导体器件贮存可靠性评估方法。在此基础上,以某款中频对数放大电路为研究对象,通过对加速寿命试验结果的分析,获得了电路在规定贮存时间下的可靠度。     

军用半导体器件的贮存理论与试验

本文论述军用半导体器件的贮存理论、标准和试验.鉴于目前我国半导体器件的现状,军用半导体器件的贮存期可规定为2～3年.超过贮存期应进行100%的外观、电参数、密封性检查和抽样可焊性试验、破坏性物理分析.试验合格后的产品仍可交付使用.     

国产半导体器件长期贮存试验研究

分析了在北方实验室条件下,贮存25年的国产商用高频小功率晶体管的特性与可靠性,通过对10批共1460只器件的试验、检测,并与25年前的原始数据进行对比分析,发现了贮存器件存在直流放大倍数(HFE)退化、内引线开路、外引线可焊性失效三种失效模式,并对其失效原因、失效机理进行了分析.在考虑到现代技术可以消除的因素(用充干N2封装或已焊接使用),预计80年代的国产商用高频小功率晶体管贮存失效率水平小于10-7.用贮存25年的实物揭示了国产半导体器件贮存存在的主要失效模式,为国产半导体器件提高贮存可靠性提供了真实可靠的依据.     

抽屉式高温贮存试验箱

<正>对半导体器件进行筛选和考核时,通常都要进行高温贮存试验.虽然我国研制和生产半导体器件已有二十多年的历史,但高温贮存试验至今仍沿用烘干玻璃器皿和油漆件的普通电热干燥箱,这种干燥箱用于半导体器件的高温贮存试验有许多明显的缺点,如箱体大而笨重;箱内温度均匀性不好,实际可以放置器件的空间很小,没有超温报警装置,容易因控制失灵,温度升高造成严重后果;温度不能自动记录;耗电量大;尤其是取、放样品时互相影响,不能严格保证试验条件.随着半导体器件的日益发展和对器件可靠性要求的提高,这种电热干燥箱越来越不能适应器件温度贮存试验的需要,我所于1980年研制成功一种抽屉式高温贮存试验箱,较好地解决了上述问题.     

再论军用半导体器件的贮存期及“延寿试验”

本文讨论了军用半导体器件的贮存失效率模型、贮存失效率曲线、贮存数据和“延寿试验”．再次阐明超过贮存期的器件只要进行必要的“延寿试验”，试验合格的产品仍可交付使用。     

降低半导体器件失效率的有效措施

要提高电子产品的可靠性水平,必须加强对元器件的质量管理。本文系统地介绍了采用优选生产厂家、高温贮存、功率老化、质量信息反馈、改善检测手段等方法来降低半导体器件的失效率,提高整机的可靠性。实践证明,这些措施简单有效。     

半导体器件的单核致翻转(SEU)——JPL试验数据一览

本文发表60种半导体器件单次核致翻转(位数改变)的试验数据一览表,并提供直至1982年五月的JPL试验的贮存元件数据。这些数据取自15次使用质子和重离子的加速器试验。     

半导体器件的发展概况

本文简要叙述半导体器件的发展概况,包括发展简史、现有种类、生产概况、发展趋势等四方面.一、半导体器件的发展简史世界上第一种半导体器件硒光电池是1876年诞生的.1948年点接触晶体管的发明是世界上半导体器件发展历史中最重大的事件,因为它第一次使半导体制成了具有放大功能的有源电子器件.1951年锗生长结晶体管及合金结晶体管的试制成功以及很快地投入生产使半导体器件从研究试制阶段开始转入较大规模的生产.下面通过列出发展中的重要事件简要地介绍半导体器件的发展历史.     

讨论硅变容管电参数的稳定性

表征半导体器件的可靠性,一般采用下列三种数据:1.电参数初始值及随时间的变化量,即电参数的稳定性;2.适应环境的能力;3.失效率(包括固有失效率和现场失效率).讨论半导体器件电参数的稳定性是表征半导体器件可靠性的一种常用方法,它不仅为半导体器件设计者改进产品质量提供依据,而且为半导体器件应用者设计整机时提供产品稳定性的数据,它是国内外可靠性方面广泛研究的一个重要课题.国外半导体器件电参数精密筛选技术就是应用一例.     

A Quantitative Analysis of Semiconductor Device Failure Rates as Graphically Indicated in Military Handbook 217

A graphical presentation of semiconductor device failure rates is made in Figs. 13B and 14B of Mil-Hdbk-217 (see Figs. 1 and 2). From this presentation, Equations may be derived which indicate interesting properties, to failure physicists, device engineers, and equipment designers. On the basis of the equations it may be concluded that: (1) extrapolating room temperature failure rates from failure rates of devices stored at elevated temperatures is not likely to be meaningful; (2) there is a definite relationship between storage failure rate and failure rate in actual use (in the temperature range of interest); (3) the storage failure rate is large enough at normal storage temperatures so that, if semiconductor device failure rates influence the reliability of equipment in which they are used, they will contribute significantly to the finite storage life of the equipment (another way of expressing the last statement is that a manufacturer with a large storage inventory of semiconductors will find a significant decrease in the percentage of usable devices with time);(4) there are some instances (as delineated earlier by equations), when increasing the number of semiconductor devices and dividing the load proportionately improves reliability, and there are other cases when it does not. While the analysis makes no claim as to the validity or accuracy of Figs. 1 and 2, the mathematics permits statements about conditions necessary to confirm the data.     

Molecular electronics: the first steps towards a new technology

Limitations of classical semiconductor physics motivate the study of information storage and information transfer in molecular structures. Fundamental aspects for the construction of possible future molecular electronic devices are discussed and elementary excitations which can serve as molecular information carriers are studied.     

半导体工厂冷水系统节能项目及管理

重点讲述半导体工厂冷水系统中的水蓄冷及设备冷却水预冷两个节能项目;简单介绍相关设备涉及的其他节能项目,同时介绍冷水系统相关设备的节能管理,以供各位同行参考。     

A Study of Accelerated Storage Test Conditions Applicable to Semiconductor Devices and Microcircuits

This preliminary theoretical study on the application of accelerated stress testing for determining storage life of semiconductor devices and microcircuits has resulted in the following conclusions: There are more environmental stresses that can be applied to the accelerated testing of plastic encapsulated microcircuits, than hermetic devices. For hermetic devices, the assurance of initial hermeticity and wire bond integrity should insure long storage-dormancy life. Since only limited storage-dormancy data are available, accelerated testing and verification with use conditions data are necessary to support the conclusion of this study.     

Laboratory Thin-Film Encapsulation of Air-Sensitive Organic Semiconductor Devices

We present an approach, which is compatible with both glass and polymer substrates, to in-laboratory handling and intra-laboratory shipping of air-sensitive organic semiconductors. Encapsulation approaches are presented using polymer/ceramic and polymer/metal thin-film barriers using commercially available materials and generally available laboratory equipment. A technique for depositing an opaque vapor barrier, a transparent vapor barrier, and an approach to storing and shipping air-sensitive thin-film organic semiconductor devices on both polymer and glass substrates are presented. Barrier performance in air was tested using organic light-emitting diodes (OLEDs) as test devices. The half-life performance of OLEDs on plastic substrates in air exceeded 700 h, and that on glass exceeded 500 h. Commercially available heat-seal barrier bag systems for device shipping and storage in air were tested using a thin film of metallic calcium to test water permeation. More than four months of storage of a metallic calcium film in a heat-sealed foil bag was demonstrated in the best storage system. These approaches allow for the encapsulation of samples for longer duration testing and transportation than otherwise possible.     

Soft errors induced by alpha particles

Soft errors induced by alpha particles can be a reliability concern for microelectronics, especially semiconductor memory devices packaged in ceramic. In dynamic random-access memory devices (DRAM), the data are stored as the presence or absence of minority carrier charges on storage capacitors. For example, in n-channel MOS memory devices, the charge carriers are electrons and the capacitors are potential wells in the p-type silicon. Alpha particles emitted from trace levels of uranium and thorium in the packaging materials can penetrate the surface of the semiconductor die. As the alpha particle passes through the semiconductor device, electrons an dislodged from the crystal lattice sites along the track of the alpha particle. If the total number of generated electrons collected by an empty storage well exceeds the number of electrons that differentiates between a 1 and a 0, the collected electron charge can flip a 1 to a 0 generating a soft error in the memory device. The trend toward increased chip density, smaller device dimensions, and lower voltages further increases the susceptibility of DRAM to soft errors. The susceptibility of DRAM to soft errors is typically measured by accelerated tests or real-time SER tests, each of which have strengths and weaknesses. Knowledge of the factors which lead to soft errors can be used to improve reliability in DRAM by using a physics-of-failure approach to monitor variables in the manufacturing process resulting in building reliability into the manufacturing process     

基于纳米尺寸的分子电子信息存储研究

以有机分子为基础的"纳米存储"是一种新型的数据存储系统,具有替代目前广泛应用的半导体存储器件的趋势。目前,有两种"分子"被潜在地应用于"纳米存储",一种是分子电子器件,包括分子导线、分子整流器、分子开关以及分子晶体管;另外一种应用了纳米结构的材料,如纳米管、纳米导线以及纳米粒子等。本文以分子电子器件的制备和构筑单元的设计为视角,根据分子结构、装置类型、终端电极的数目以及分子介质的状态对分子电子器件进行了分类,同时也对分子结的制备、特征、电荷转移机制以及三终端分子器件、树状化合物分子尺寸纳米电荷存储的发展进行了探讨,并对纳米信息存储存在的问题及发展方向进行了展望。     

A method for terminating mesh lines in finite difference formulations of the semiconductor device equations

In this paper a method is described for terminating mesh lines in one or two dimensions within the context of the finite difference formulation of the semiconductor device equations This saves both computer time and storage since unneeded mesh points are eliminated. However, more importantly it can result in a system of equations that are better conditioned in the case of devices where the coupling between portions of the device is poor in the numerical sense. Several examples are shown of field effect power devices where convergence was only possible after the line termination methods were applied. Finally, a short discussion is presented on the relative advantages of the finite difference formalism in comparison to the finite element methods in light of the line termination technique.     

Compact solid-State switched pulsed power and its applications

Power semiconductor devices, such as insulated-gate bipolar transistors, metal-oxide-semiconductor field-effect transistors, and static-induction thyristors, are used in different kinds of pulsed power generators developed for different applications. In addition, the semiconductor opening switch is found to have very effective applications in pulsed power generation by inductive energy storage. Semiconductor switches have greatly extended the scales of pulsed power parameters, especially in repetition rate and lifetime. They have also enabled new areas of pulsed power applications, such as accelerators, flue-gas treatment, and gas lasers.