Effect of internal strain on magnetic properties of La0.7Sr0.3MnO3 films

Oriented La_0.7Sr_0.3MnO₃ (LSMO) films were grown on (100) LaAlO₃ (LAO) and SrTiO₃ (STO) substrates by the method of radio frequency magnetron sputtering. X-ray diffraction patterns of LSMO films deposited on LAO and STO substrates showed a slight shift of diffraction peaks as compared to the corresponding peaks of the bulk LSMO. The shift of diffraction peaks was believed to result from the in-plane lattice mismatch between the film and substrate. The distinguished strain effects of substrates were found to be effective on the magnetic properties and the surface morphology of LSMO films on both substrates. The results indicate that STO substrate may be the promising candidate for room-temperature applications of LSMO film.     

Effects of oxygen-plasma treatment in La0.7Ca0.3MnO3−δ thin films

Oxygen-plasma effects have been investigated for La_0.7Ca_0.3MnO_3−δ thin film samples. As a result, an increase in the metal-insulator transition temperature was observed in a thin film sample. On the other hand, an increase in the resistivity as well as a decrease of the metal-insulator transition temperature was observed in a sample showing considerable structural disorder.     

Preparation and colossal magnetoresistance in a trilayer La0.67Sr0.33MnO3/La0.75MnO3/La0.67Sr0.33MnO3 device by dc magnetron sputtering

Epitaxial trilayer films of La_0.67Sr_0.33MnO₃ (LSMO)/La_0.75MnO₃ (L0.75MO)/La_0.67Sr_0.33MnO₃ (LSMO) have been prepared on (0 0 1) oriented LaAlO₃ substrates by dc magnetron sputtering. The structure and MR are studied. All as-deposited trilayer films exhibit a semiconductor to metal transition at temperature ranging from 116 to 185 K. The MR is also shown to be dependent on the thickness of the middle oxide layer. A maximum MR value of 32% (ΔR/R₀) has been obtained at 132 K under 0.4 T magnetic field for a LSMO (300 nm)/L0.75MO (70 nm)/LSMO (300 nm) trilayer film. The MR of trilayer film prefers to that of both LSMO and L0.75MO single layer films.     

Enhancement of thermoelectric figure of merit by doping Dy in La0.1Sr0.9TiO3 ceramic

Ceramic samples of La_0.1Sr_0.9−xDy_xTiO₃ (x = 0.01, 0.03, 0.07, 0.10) have been prepared by the solid-state reaction method. Characterization from the powder X-ray diffraction indicates that their crystal structure changes from cubic to tetragonal phase. Their electrical and thermal transport properties are measured in the temperature range of 300-1100 K. n-Type thermoelectric is obtained with large Seebeck coefficient. The figure of merit is markedly improved, due to relatively lower electrical resistivity and thermal conductivity by Dy doping effect. A much lower electrical resistivity of 0.8 mΩ cm at room temperature is obtained in La_0.1Sr_0.8Dy_0.1TiO₃, and with a relatively lower thermal conductivity of 2.5 W/m K at 1075 K. The maximum figure of merit reaches ∼0.36 at 1045 K for La_0.1Sr_0.83Dy_0.07TiO₃, which is the largest value among n-type oxide thermoelectric ceramics.     

Effect of MgWO4 content on properties of Ba0.5Sr0.5TiO3 composite ceramics for tunable microwave applications

xMgWO₄-(1 − x) Ba_0.5Sr_0.5TiO₃ (x = 0.0, 5.0, 15.0, 25.0 and 35.0 wt%) composite ceramics were prepared via solid state reaction processing. Their structural and dielectric properties were systematically characterized. A significant increase in grain size was observed with increasing MgWO₄ content, which was accompanied by obvious variations in dielectric properties of the composite ceramics. It is found that the permittivity peaks of the samples gradually shifted to low temperatures with increasing MgWO₄ content. At the same time, tunabilities of the composite ceramics decreased, but their Q values increased. The sample with 35 wt% MgWO₄ possesses a high tunability of 16.8% (∼10 kHz), a low permittivity of 65 and an appropriate Q value of 309 (∼4.303 GHz), which meet the requirements of high power and impedance matching, thus making it a promising candidate for applications as electrically tunable microwave devices.     

Electrical properties tailoring in Ni-particle-dispersed (Ba0.95Ca0.05)(Ti0.96Zr0.04)O3 composites

Ni-particle-dispersed (Ba_0.95Ca_0.05)(Ti_0.96Zr_0.04)O₃ (BCTZ/Ni) piezoceramic composites were prepared via sintering at 1300 °C in industrial N₂ gas. Structural characterizations showed that the metallic Ni was not oxidized and the BCTZ preserved the perovskite structure. The Ni particles were uniformly distributed in the BCTZ ceramic matrix. The relative dielectric constant ?_r of the BCTZ/Ni composites increased from 1362 to 3910 with increasing Ni content from 0 to 20 vol.%, which is explained by the Maxwell equation as well as the micro-capacitor model. The percolation theory of insulator–metal transitions is also applied to correlate the rapid increase of dielectric constant with Ni content. The piezoelectric constant d₃₃ gradually decreased from 230 to 50 pC N⁻¹, giving a gradient profile of piezoelectric property. We demonstrate that the electrical properties can be effectively tailored by dispersing metal particles into piezoceramics.     

Dielectric properties and substitution mechanism of samarium-doped Ba0.68Sr0.32TiO3 ceramics

Ba_0.68Sr_0.32TiO₃ ceramics of perovskite structure are prepared by solid state reaction method with addition of x mol% Sm₂O₃, and their dielectric properties are investigated. It is found that, integrating with the lattice parameters and tolerance factor t, there is an alternation of substitution preference of Sm³⁺ for the host cations in perovskite lattice. Owing to the replacement of Sm³⁺ ions for Ba²⁺ ions in the A site, T_c rises with the increase of Sm₂O₃ doping when the doping content is below 0.1 mol%; meanwhile, when the content is more than 0.1 mol%, Sm³⁺ ions tend to occupy the B-site, causing a drop of T_c. Owing to the modifications of Sm³⁺ doping, dielectric constant, dissipation factor and temperature stability of dissipation factor are influenced remarkably, making it a superior candidate for environment-friendly applications. Moreover, the creation of oxygen vacancies controls the dielectric constant when the addition is above 0.1 mol%, so the dielectric constant decreases with increasing of samarium.     

The demonstration of epitaxial and electronic-magnetic properties for La0.67Sr0.33MnO3−δ films with (1 1 1) orientation

La_0.67Sr_0.33MnO_3−δ films, fabricated on (1 1 1) LaAlO₃ single-crystal substrates using a direct current magnetron sputtering technique, are demonstrated by X-ray diffraction patterns and pole figures to be high quality epitaxial films and there is a perfect matching relationship between the films and the substrates. We observed an obvious difference of the electronic-magnetic transportation properties among films sputtered on (1 1 1), (1 0 0) and (1 1 0) LaAlO₃ substrates, respectively. A mechanism for the difference is discussed briefly.     

Influence of Bi2O3 and CuO addition on low-temperature sintering and dielectric properties of Ba0.6Sr0.4TiO3 ceramics

In this study, we tried to lower the sintering temperature of Ba_0.6Sr_0.4TiO₃ (BST) ceramics by several kinds of adding methods of Bi₂O₃, CuO and CuBi₂O₄ additives. The effects of different adding methods on the microstructures and the dielectric properties of BST ceramics have been studied. In the all additive systems, the single addition of CuBi₂O₄ was the most effective way for lowering the sintering temperature of BST. When CuBi₂O₄ of 0.6 mol% was mixed with starting BST powders and sintered at 1100 °C, the derived ceramics demonstrated dense microstructure with a low dielectric constant (? = 4240), low dielectric loss (tan δ = 0.0058), high tunability (Tun = 38.3%) and high Q value (Q = 251). It was noteworthy that the sintering temperature was significantly lowered by 350 °C compared with no-additive system, and the derived ceramics maintained the excellent microwave dielectric properties corresponding to pure BST.     

Thickness dependent transport and magnetotransport in CSD grown La0.7Pb0.3MnO3 manganite films

We report the effect of film thickness on transport and magnetotransport in La_0.7Pb_0.3MnO₃ (LPMO) manganite films grown on single crystalline LaAlO₃ substrate using chemical solution deposition (CSD) technique. AFM measurements show the island type grain growth responsible for the strain at the film-substrate interface, while structural studies using XRD shows the presence of thickness dependent compressive strain in the films which modifies the transport and magnetotransport in LPMO/LAO films. The observation of low temperature resistivity minima behavior in all the LPMO films has been explained in the context of electron-electron scattering mechanism. The ZFC-FC magnetization measurements show the glassy state behavior below T_min.     

Combustion synthesis of La0.7Sr0.3Co0.5Fe0.5O3 (LSCF) porous materials for application as cathode in IT-SOFC

La_0.7Sr_0.3Co_0.5Fe_0.5O₃ (LSCF) porous materials have attracted a substantial interest for application as cathode in solid oxide fuel cells of intermediate temperature (IT-SOFC). This work investigates the effect of different propellants (urea, glycine, citric acid and sucrose) in the preparation of LSCF powders by the combustion method and also the influence of the sintering temperature on the porosity and electrical conductivity. TGA profiles of the as-prepared samples showed a lower weight loss for the sample prepared with glycine, associated with the higher combustion temperature. XRD patterns presented characteristic reflections of LSFC perovskite and a small formation of secondary phases, with nanometric crystallite sizes (9-20 nm). SEM analysis revealed the loose and porous structure of the powder materials. Densification studies were carried within 950-1100 °C, showing that porosity decreased with increasing sintering temperature. Electrical conductivity was measured in the temperature range 300-800 °C and correlated with the sintering temperature.     

Magnetic coupling in La0.67Ca0.33MnO3/La0.67Sr0.33CoO3/La0.67Ca0.33MnO3 sandwiches

La_0.67Ca_0.33MnO₃ (LCMO)/La_0.67Sr_0.33CoO₃ (LSCO)/LCMO trilayer films are fabricated on single-crystal substrates NdGaO₃ (110) and the interlayer coupling are investigated. Compared with LCMO single layer, sandwiches showed the enhanced metal-insulator transition temperature of LCMO layers. The magnetoresistance is dependent on spacer thickness and the peak value dramatically decreases when LSCO layer is thick enough because of shorting by the LSCO layer. The magnetic coercivity H_C shows a nonmonotonic behavior with changing spacer layer thickness and the waist-like hysteresis indicates that there is an indirect exchange coupling between the top and bottom LCMO layers across the spacer layer.     

Tunable and microwave dielectric properties of Ba0.5Sr0.5TiO3-BaWO4 composite ceramics doped with Co2O3

Co₂O₃ doped BaWO₄-Ba_0.5Sr_0.5TiO₃ composite ceramics, prepared by solid-state route, were characterized systematically, in terms of their phase compositions, microstructure and microwave dielectric properties. Doping of Co₂O₃ promoted grain growth, reduced Curie temperature and broadened phase-transition temperature range of BaWO₄-Ba_0.5Sr_0.5TiO₃, which were attributed mainly to the substitution of Co³⁺ for Ti⁴⁺ at B site in the perovskite lattice. Dielectric diffusion behaviors of the composite ceramics were discussed. The composite ceramics all had dielectric tunability of higher than 10% at 30 kV/cm and 10 kHz, with promising microwave dielectric properties. Specifically, the sample doped with 0.2 wt.% Co₂O₃ exhibited a tunability of 20%, permittivity of 225 and Q of 292 (at 1.986 GHz), making it a suitable candidate for applications in electrically tunable microwave devices.     

Dielectric and tunable characteristics of Ba0.4Sr0.6TiO3-BaWO4 composite ceramics for microwave applications

Phase compositions, microstructure and microwave dielectric properties, of BaWO₄ (BW)-Ba_0.4Sr_0.6TiO₃ (BST) composite ceramics, prepared by the traditional solid-state route, were systematically characterized. Meanwhile, mechanism of dielectric tunability of those materials was discussed. Dielectric properties of the BW-BST composites at a DC bias field near the phase transition temperature could be interpreted by using Johnson's phenomenological equation. The sample with x = 0.60 exhibited a tunability of 29.5%, a dielectric permittivity of 192 and a Q value of 231 (at 2.700 GHz), which make it a promising candidate for applications in electrically tunable microwave devices.     

Characterisation of proton irradiated Ba0.65Sr0.35TiO3/P(VDF-TrFE) ceramic–polymer composites

Barium strontium titanate/poly (vinylidene fluoride-trifluoroethylene)70/30 (Ba_0.65Sr_0.35TiO₃/P(VDF-TrFE) 70/30) composite with high dielectric permittivity was developed by integrating high dielectric permittivity ceramic powder with proton irradiated polymer matrix. The composite after irradiation behaves as a relaxor ferroelectric material and this behaviour is similar to that of irradiated P(VDF-TrFE) 70/30 co-polymer. Due to the irradiation, dielectric peaks broadened and moved towards the lower temperature, creating high relative permittivity values in a broad temperature range. Ba_0.65Sr_0.35TiO₃/P(VDF-TrFE) composite with 0.5 ceramic volume fraction with a dosage of 80 Mrad can reach a relative permittivity of 160 at room temperature (at 1 kHz), which is about 14 times higher than that of pure copolymer. Polarization-electric field hysteresis loops of composites are strongly depended on the ceramic powder volume fraction and the effects of irradiation is less apparent in composites with higher ceramic powder volume fraction.     

Grain size-dependent electrical transport properties in La0.75Sr0.25Mn1−xMgxO3±δ ceramics

The role of GB in Mg-substituted lanthanum-strontium manganite ceramics is studied with microstructural details. At higher concentrations of Mg (x>0.05), where the average grain size is ∼1 μm, the M-I transition is shifted from 348 to 110 K. Annealing in lower p_O2 (10⁻⁶ atm) at 1375 K for 1 h obliterates the M-I transition and brings in insulating behaviour throughout the temperature of measurement. Re-annealing in oxygen atmosphere for 10-25 min reintroduces the M-I transition, indicating that the electrical transport properties depend on the chemical inhomogeneity introduced by the in- or out-diffusion of oxygen through the GB regions. Samples with larger grain size (∼35 μm) do not exhibit major modifications in electrical resistivity on annealing in different p_O2. The insulating manganites display non-linear J-E characteristics below the magnetic transition temperature at electric field strengths <50 V/cm. The non-linear behaviour is explained on the basis of the inelastic tunnelling through the multiple localised states in the insulating GB regions. The external magnetic field lowers the voltage at which the non-linearity sets in. The tunnelling therefore may be not only through independent defect centres of oxygen vacancies (V_O), but possibly from defect complexes such as Mn³⁺-V_O or Mn²⁺-V_O, where spin-dependent tunnelling can take place.     

Microstructures and dielectric properties of Ba0.6Sr0.4TiO3-MgO ceramics prepared by non-aqueous gelcasting and dry pressing

Non-aqueous gelcasting and dry pressing were used to prepare 45 wt% Ba_0.6Sr_0.4TiO₃-55 wt% MgO (BSTM) ceramics. The effects of different forming methods on the microstructures and dielectric properties of the BSTM ceramics were investigated. The densities of the BSTM ceramics prepared by non-aqueous gelcasting are lower but more uniform than that of the BSTM ceramics prepared by dry pressing. The XRD analysis illustrates that phase compositions are completely the same no matter what forming method is adopted. The SEM results show that the BSTM green samples and sintered ceramics prepared by non-aqueous gelcasting are more uniform than that prepared by dry pressing. Furthermore, it is found that the BSTM ceramics prepared by non-aqueous gelcasting have higher and more uniform dielectric constant, tunability and loss tangent (measured at 10 kHz and 20 °C). Meanwhile, the BSTM ceramics prepared by non-aqueous gelcasting have higher dielectric constant and lower Q × f value (namely more loss) when they are measured at microwave frequencies.     

Low temperature sintering and properties of piezoelectric PZT-PFW-PMN ceramics with YMnO3 addition

Low temperature sintering of Pb(Zr,Ti)O₃-Pb(Fe_2/3W_1/3)O₃-Pb(Mn_1/3Nb_2/3)O₃ (PZT-PFW-PMN) quaternary piezoelectric ceramics were studied with the use of YMnO₃ as sintering aid. The sintering aid improved the sinterability of PZT-PFW-PMN ceramics due to the effect of YMnO₃ liquid phase. The effects of YMnO₃ contents and sintering temperature on the phase structure, density, dielectric and piezoelectric properties were investigated. The results show that the sintering temperature can be decreased and the electrical properties can be maintained by the YMnO₃ addition. The optimized properties were obtained by doping 0.30 wt.% YMnO₃ and sintering at 1020 °C, which are listed as follows: d₃₃ = 341 pC/N, K_p = 0.57, Q_m = 1393, tan δ = 0.0053, T_c = 304 °C, P_r = 17.13 μC/cm² and E_c = 11.15 kV/cm, which make this system be a promising material for multilayer piezoelectric actuator and transformer applications.     

Effects of step-edge conditions on the magnetoresistance of La0.7Sr0.3MnO3 tunneling junctions

La_0.7Sr_0.3MnO₃ (LSMO) tunneling magnetoresistance (TMR) junctions have been successfully fabricated on step-edge (001) SrTiO₃ substrates with various step-edge conditions. We report the fabrication techniques of LSMO step-edge TMR junctions in which the standard photolithography and ion-beam etching techniques are used to control the step angle and step height. We study the influence of step-edge conditions on the resistance and MR behavior of LSMO TMR junctions. It is found that the magnitude of junction resistance increases with an increase of step angle or with a decrease of d/H ratio, where d is the film thickness and H the step height. Based on our results, we conclude that a suitable d/H ratio of ∼0.5-0.9 with a high step angle of φ≥70° can be regarded as the optimum conditions for the fabrication of step-edge TMR junctions.     

Preparation, magnetic and microwave absorption properties of La0.5Sr0.5MnO3/La(OH)3 composites

La_0.5Sr_0.5MnO₃/La(OH)₃ composites with different weight ratio of La_0.5Sr_0.5MnO₃ particles and La(OH)₃ nanowires have been prepared by tuning the reaction time under hydrothermal conditions. The structure, morphology and magnetic properties have been investigated. Additionally, by the measurements of the complex permittivity, permeability and microwave absorption properties in the frequency range of 1-12 GHz, the results shown that the weight ratio of La(OH)₃ nanowires has great influence on reflection loss. Excellent absorption property can be obtained when the ratio is 1.4%, which is attributed to the enhanced electromagnetic match as well as the proper dielectric loss and magnetic loss. The enhanced electromagnetic match is originated from the improved frequency dispersion of the complex permittivity and permeability due to the presence of dielectric La(OH)₃ nanowires.