Preparation and photoluminescence of Er-doped Al2O3 films by sol-gel method

The 0-1.5 mol% Er³⁺-doped Al₂O₃ films have been prepared on the thermally oxidized SiO₂/Si(100) substrate in the dip-coating process by the sol-gel method, using the aluminium isopropoxide [Al(OC₃H₇)₃]-derived γ-AlOOH sols with the addition of erbium nitrate [Er(NO₃)₃·5H₂O]. The continuous Er³⁺-doped Al₂O₃ films with the thickness of about 1.2 μm were obtained for nine coating cycles at a sintering temperature of 900 °C. The aggregate size for the Er³⁺-doped Al₂O₃ films increased with increasing the Er³⁺ doping concentration from 0 to 1.5 mol%. The root-mean-square roughness of the films was independent on the Er³⁺ doping, which was about 1.8 nm for the 0-1.5 mol% Er³⁺-doped Al₂O₃ films. The γ-Al₂O₃ phase with a (110) preferred orientation was produced for the Al₂O₃ film. The photoluminescence (PL) spectra of 0.1-1.5 mol% Er³⁺-doped Al₂O₃ films were observed at the measurement temperature of 10 K. There was no significant change for the PL peak intensity with the increase of Er³⁺ doping concentration from 0.1 to 1.5 mol%, and similar full width at half maximum of about 40 nm was detected for the 0.1-1.5 mol% Er³⁺-doped Al₂O₃ thin films. The Er³⁺-doped Al₂O₃ films possess the available PL properties for use in planar optical waveguides.     

Microstructure and electrical properties of Sm2O3 doped Bi2O3-based ZnO varistor ceramics

The dependence of the bulk density, microstructure and dc electrical properties of bismuth oxide (Bi₂O₃)-based zinc oxide (ZnO) varistor ceramics for various samarium oxide (Sm₂O₃) contents was investigated. The value of bulk density was found to 5.43-5.50 g cm⁻³ with Sm₂O₃ (mol%) content. The maximum value of bulk density is observed to be 5.50 for 0.30 mol% Sm₂O₃ containing varistor ceramics. The grain sizes for all the samples calculated from the scanning electron micrographs were found to decrease as Sm₂O₃ increases. The presence of ZnO phases, Bi-rich phases, spinel phases and Sm₂O₃ phases were observed in the samples by the energy dispersive X-ray analysis and X-ray diffraction analysis. As the Sm₂O₃ amount increased in the Bi₂O₃-based ZnO varistor ceramics, the nonlinear coefficient, α increased up to 0.10 mol%, reaching a maximum value of 58 and then decreased. The breakdown electric field, E_b, increased with the increase of Sm₂O₃ content with a maximum value of 3220 V cm⁻¹ for the 0.75 mol% Sm₂O₃ doped ZnO varistor ceramics. The leakage current, I_L, showed a minimum value of 1.10 μA for the composition of 0.30 mol% Sm₂O₃ doped Bi₂O₃-based ZnO varistor ceramics. The 0.30 mol% Sm₂O₃-doped Bi₂O₃-based ZnO varistor ceramics sintered at 1200 °C exhibited a good stability for dc accelerated aging stress of 0.90 V_1 mA/90 °C/12 h.     

Preparation and characterization of Co-doped ZnO-Al2O3-SiO2 glass-ceramics by the sol-gel method

Transparent glass-ceramics containing Co²⁺:ZnAl₂O₄ nanocrystals were obtained by the sol-gel process for the first time. The gels of composition 89SiO₂-5.9Al₂O₃-4.9ZnO-0.2CoO (ZAS) were prepared at room temperature, and heat-treated at different temperatures. The microstructure and optical properties of the heated samples were studied by using X-ray diffraction (XRD), transmission electron microscopy (TEM), infrared spectroscopy, and optical absorption spectra. Co²⁺:ZnAl₂O₄ nanocrystals were precipitated from ZAS system and dispersed in the SiO₂-based glass during heat-treatment in the temperature range 900-1100 °C. Co²⁺ ions were located in tetrahedral sites in ZnAl₂O₄ nanocrystals. The Co²⁺:ZnAl₂O₄ crystallite size was in the range of 4-15 nm.     

Multi-color long-lasting phosphorescence in Mn-doped ZnO-B2O3-SiO2 glass-ceramics

Multi-color LLP phenomenon was observed in Mn²⁺-doped ZnO-B₂O₃-SiO₂ glass-ceramics after the irradiation of a UV lamp at room temperature. Transparent ZnO-B₂O₃-SiO₂ glass emitted reddish LLP while opaque glass-ceramics prepared by the glass sample after heat treatment emitted yellowish or greenish LLP. The change of the phosphorescence is due to the alteration of co-ordination state of Mn²⁺. The phosphorescence of the samples was seen in the dark with naked eyes even 12 h after the irradiation with a UV lamp (λ_max=254 nm) for 30 min. Based on the approximative t⁻¹ decay law of the phosphorescence, we suggest that the LLP is attributed to the thermally assisted electron-hole recombination.     

掺杂ZnO-Al2O3-SiO2微晶玻璃的研制及吸收光谱特性

在ZnO-Al2O3-SiO2系统玻璃中掺入少量晶核剂TiO2,再掺入过渡金属离子和稀土离子,在高温下熔制得到透明母体玻璃.对上述玻璃进行晶化热处理,最后得到透明微晶玻璃.测定了晶化前后玻璃的密度与硬度变化.用差热分析(DTA)确定晶化温度,用X射线粉末衍射确定微晶相,并用透射电镜观察了晶相的形貌.测定并讨论了所得微晶玻璃在紫外波段至近红外波段的吸收光谱特性.研究结果表明微晶化后的密度与硬度都增大.掺杂于微晶玻璃中的Cr离子和Co离子的吸收光谱在微晶前后发生较大差异,而其余均未明显变化,这一现象归属于掺杂离子所处的不同位置所致.     

Characterisation of YBa2Cu3O6+x films grown by the trifluoro-acetate metal organic decomposition route by infrared spectroscopy

Infrared reflectivity measurements have been performed at T = 300 K on c-axis oriented YBa₂Cu₃O_6+x films obtained by deposit of trifluoroacetate precursors on (100)-LaAlO₃ single crystalline substrates. A detailed simulation of the infrared spectra acquired on the thin films based on the use of an appropriate complex dielectric function model is proposed here. It allows us to determine with a single experiment the thickness and the residual porosity of the layers. To reinforce the statement of the infrared simulations, the results have been compared with the film porosity obtained by scanning electron microscopy imaging. Moreover the local grain orientation has been checked by polarized Raman microspectroscopy. Finally, the three complementary experimental ways give consistent results that justify the present approach.     

Observation of broadband infrared luminescence in a novel Bi-doped P2O5-B2O3-Al2O3 glass

A novel Bi-doped P₂O₅-B₂O₃-Al₂O₃ glass was investigated, and strong broadband NIR (near infrared) luminescence was observed when the sample was excited by 445 nm, 532 nm, 808 nm and 980 nm lasers, respectively. The max FWHM with 312 nm, the lifetime with 580 μs and the σ_emτ product with 5.3 × 10^− 24 cm² s were obtained which indicates that this glass is a promising material for broadband optical amplifier and tunable laser. The effect of the introduction of B₂O₃ on the glass structure and Bi-ions illuminant mechanism were discussed and analyzed. It is suggested that the introduction of B₂O₃ makes the glass structure closer, and the broadband NIR emission derives from Bi⁰:²D_3/2 → ⁴S_3/2 and Bi⁺:³P₁ → ³P₀ transitions.     

Microstructure and mechanical properties of MgO-Al2O3-SiO2-TiO2 glass-ceramics

Crystallization sequences of MgO-Al₂O₃-SiO₂-TiO₂ system glass were investigated by means of DTA, XRD, SEM and EDS. The mechanical properties of samples, including density, microhardness and elastic modulus, were characterized as well. The relationship between crystalline phases, heat treatment methods and mechanical properties is discussed. The results have shown that: the glass first underwent extensive phase separation into titanium-rich droplets in a silica-rich matrix, then magnesium aluminotitanate (MAT) initially precipitated in the droplet phase. With the crystallization temperature increased, β-quartz_ss, sapphirine, α-quartz_ss, α-cordierite and cristobalite made their appearance successively. When the glass was heated at 1100 °C for 2 h, the maximum elastic modulus of 137 GPa (accompanied by a microhardness of 8.5 GPa and a density of 2.924 g/cm³) was obtained.     

High-pressure phase transition in Ho2O3

High-pressure X-ray diffraction and Raman studies on holmium sesquioxide (Ho₂O₃) have been carried out up to a pressure of ∼17 GPa in a diamond-anvil cell at room temperature. Holmium oxide, which has a cubic or bixbyite structure under ambient conditions, undergoes an irreversible structural phase transition at around 9.5 GPa. The high-pressure phase has been identified to be low symmetry monoclinic type. The two phases coexist to up to about 16 GPa, above which the parent phase disappears. The high-pressure laser-Raman studies have revealed that the prominent Raman band ∼370 cm⁻¹ disappears around the similar transition pressure. The bulk modulus of the parent phase is reported.     

Electrochromic investigation of sol-gel-derived thin films of TiO2-V2O5

Thin films of TiO₂ and TiO₂-V₂O₅ were obtained by dip-coating sol-gel technique. Sols were prepared from titanium ethoxide and inorganic V₂O₅ sol received by dissolution of vanadium pentoxide in hydrogen peroxide. Sol-gel TiO₂ and TiO₂-V₂O₅ films are deposited on conductive glass substrates. TiO₂ and TiO₂-V₂O₅ systems were characterized by FTIR and Raman spectroscopy. Optical transmittance measurements were carried out. Electrochromic characterization was recorded by cyclic voltammetry using three-electrode arrangement. All samples demonstrated electrochromic effect.     

An investigation on electrochromic properties of (WO3)1−x-(Fe2O3)x thin films

In this research, the effect of Fe₂O₃ content on the electrochromic properties of WO₃ in thermally evaporated (WO₃)_1−x-(Fe₂O₃)_x thin films (0 ≤ x ≤ 0.4) has been studied. The atomic composition of the deposited metal oxides was determined by X-ray photoelectron spectroscopy analysis. The surface morphology of the thin films has been examined by atomic force microscopy. The surface roughness of all the films was measured about 1.3 nm with an average lateral grain size of 30 nm showing a smooth and nanostructured surface. The electrochromic properties of (WO₃)_1−x-(Fe₂O₃)_x thin films deposited on ITO/glass substrate were studied in a LiClO₄ + PC electrolyte by using ultraviolet-visible spectrophotometry. It was shown that increasing the Fe₂O₃ content leads to reduction of the optical density (ΔOD) of the colored films and also leads to increasing the optimum coloring voltage from 4 to 6 V in which ΔOD shows its maximum values, in our experimental conditions. Furthermore, by using this procedure, it is possible to make an electrochromical filter which behaves similar to the colored WO₃ film in the visible region, while it can be nearly transparent for near-infrared wavelengths, in contrast of the pure colored WO₃ film.     

Properties of tungsten-doped Bi4Ti3O12-SrBi4Ti4O15 intergrowth ferroelectrics

Ferroelectric and dielectric properties of tungsten-doped Bi₄Ti₃O₁₂-SrBi₄Ti₄O₁₅ ceramics were investigated. A pure phase of all the samples is confirmed by X-ray diffraction patterns. The remanent polarization (2P_r) of the samples increases initially and reaches its maximum value of 43.2 μC/cm² when W content is 0.03, which is over twice as large as that of non-doped one, then decreases with further doping. The coercive field (E_c) shows a weak tungsten content dependency. It is considered that the enlarged 2P_r could be mainly attributed to the restraint of oxygen vacancies as well as the weakening of their mobility. The Curie temperature decreases a little with increasing doping content, which indicates the good thermal stability is not deteriorated by tungsten doping.     

Thin film growth of epitaxial, polycrystalline and amorphous SrRuO3

The SrRuO₃ thin films were grown on amorphous fused silica and (100) single crystal LaAlO₃ substrates by pulsed laser deposition method. On fused silica substrates, polycrystalline SrRuO₃ thin film was obtained and below the crystallization temperature, SrRuO₃ thin films show an amorphous phase. For the case of epitaxial growth on (100) single crystal LaAlO₃ substrate, the crystallization temperature of SrRuO₃ thin film was increased by ∼ 100 °C indicating that additional energy is necessary in order to obtain the epitaxial thin film. By using the eclipse method and the control of substrate temperature, the variations of surface morphologies and grain size were observed by atomic force microscope. Below the crystallization temperature, amorphous SrRuO₃ thin film shows hopping transport property of an insulator.     

Preparation of Y2O3-Al2O3-SiO2 glasses by combustion synthesis melt-casting under high gravity

Y₂O₃-Al₂O₃-SiO₂ glasses were prepared by combustion synthesis melt-casting under high gravity. The properties of the glasses strongly depended on the starting compositions and preparation conditions. With a higher SiO₂ content in the starting compositions, the glass-forming ability of the melt was improved, but the density and hardness of the prepared glasses decreased. Crystallization occurred more frequently for larger samples and by using quartz crucibles instead of graphite ones. By increasing the high-gravity factors, both the density and hardness of the samples were improved. It is proposed that enhancing the high-gravity field facilitates the removal of bubbles from the melt.     

Study of excitation spectra of ZrP2O7:Tb in vacuum ultraviolet region

Samples of ZrP₂O₇ doped with and without Tb in the form of cubic symmetry were prepared and their 147 nm excited emission spectra and excitation spectra for Zr and Tb emission were investigated. The O-Zr excitation band located at 175 nm recorded for Zr-O emission at about 280 nm was observed, but it was not observed when monitored at 543 nm emission of Tb. It indicated that the energy transfer from Zr-Tb did not occur. In addition there are two f-d transition bands of Tb located at 197 and 217 nm respectively in the excitation spectra.     

Optical properties of Ho:SrMoO4 single crystal

Ho³⁺:SrMoO₄ single crystal was grown by the Czochralski method in N₂ atmosphere. The polarized absorption spectra, emission spectra and the lifetime decay curves were measured at room temperature. The Judd-Ofelt theory has been applied to analyze the absorption spectra. The spectroscopic parameters, including three intensity parameters, radiative transition rates, radiative lifetimes, fluorescent branching ratios and emission cross sections were obtained. The luminescence lifetime of the ⁵S₂ level was determined to be 4.40 μs.     

Quasi-single scattering of low-energy Ne ions from the Fe3O4 surfaces

The energy spectra of positive and negative ions emitted from single-crystalline Fe₃O₄ (0 0 1) and (1 1 1) surfaces under low-energy Ne⁺ ion bombardments were investigated in the temperature range from 85 to 300 K. The characteristics of the LEIS spectra of the two surfaces are very similar. The positive-charged-ion spectra have revealed the O⁺-recoil and the quasi-single scattering Ne⁺-Fe peak, while a large broad O⁻¹ recoil signal was observed in the negative-charged-ion ones. No change of the peak shape and of the energy position have revealed for the (0 0 1) surface, whereas the (1 1 1) one implies an appearance of a small peak around 150 K attributed to recoil-oxygen ions from the double-collisions.     

Fabrication and structure properties of GaN nanowires by ammoniating Ga2O3 films

The GaN nanowires were successfully synthesized on Si(111) substrates by ammoniating the Ga₂O₃/ZnO films at 900 °C. The structure and morphology of the as-prepared GaN nanowires were studied by X-ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), scanning electron microscopy (SEM) and field-emission transmission electron microscopy (FETEM). The results show that the single-crystal GaN nanowires have a hexagonal wurtzite structure with lengths of about several micrometers and diameters ranging from 30 nm to 120 nm, which are conducive to the application of nanodevices. Finally, the growth mechanism is also briefly discussed.     

Photoinduced nonlinear optics in Sb2Se3–BaCl2–PbCl2 glasses

Photoinduced structural transformations in amorphous Sb₂Se₃–BaCl₂–PbCl₂ glasses were studied using a differential IR spectroscopy Fourier technique in the spectral region between 100 and 300 cm⁻¹. A stage of the reversible photodarkening is realized in the Sb₂Se₃ fragments after the first cycle of photoexposure and thermoannealing. The whole scheme of the photo- and thermoinduced transformations in the amorphous system may be explained as a coordination of formation and annihilation of defects. The vibrational density of states calculated using quantum chemical solid state methods confirms our experimental results and their interpretation. Photoinduced photodarkening changes using a CO₂ pulse laser (λ=10.6 μm) in new synthesized Sb₂Se₃–BaCl₂–PbCl₂ glasses were investigated. At the same time we have studied photoinduced second harmonic generation (SHG) and two-photon absorption (TPA). The possibility of using this glass as perspective materials for IR optoelectronics and nonlinear optics was shown.     

Dielectric and microwave absorbing properties of low power plasma sprayed Al2O3/Nb composite coatings

Al₂O₃/Nb composite coatings were sprayed on graphite substrates by low power atmospheric plasma spraying (LPAPS) with an internally fed powder torch. The composite particles were agglomerated with different mass fractions by spray-drying technology. The microstructure and dielectric properties of coatings were investigated. The microstructure of composite coatings shows a uniform dispersion of metal particles in the composite coatings. Both the real (?′) and imaginary (?″) parts of the complex permittivity increase with increasing Nb content over the frequency range of 8.2-12.4 GHz, which is ascribed to space charge polarization and conductance loss, respectively. By calculating the microwave-absorption as a single-layer absorber, reflection loss values exceeding −10 dB can be obtained in the frequency range of 10.0-11.8 GHz with 10 wt% Nb content coating when the coating thickness is 1.5 mm.