Rapid preparation, characterization, and photoluminescence of ZnO films by a novel chemical method

A novel and simple chemical route was developed for the deposition of ZnO film from aqueous solution, integrating the merits of successive ionic layer adsorption and reaction and chemical bath deposition. ZnO thin films on glass and Si(1 0 0) substrates were deposited with the precursor of zinc-ammonia complex. As-deposited ZnO film exhibits good crystallinity with the hexagonal wurtzite crystalline structure and the preferential orientation along (0 0 2) plane. With a dense and continuous appearance, the film is composed of ZnO particles in even size of 200-300 nm. Under the excitation of 340 nm, strong and sharp near band gap emission (∼391 nm) dominates the photoluminescence spectra with several weak emission peaks related to the deep level (∼450-500 nm). In addition, the mechanism for the deposition process of ZnO from aqueous solution was preliminarily discussed.     

Optical and photoconductivity properties of ZnO thin films grown by pulsed filtered cathodic vacuum arc deposition

High quality transparent conductive ZnO thin films with various thicknesses were prepared by pulsed filtered cathodic vacuum arc deposition (PFCVAD) system on glass substrates at room temperature.The high quality of the ZnO thin films was verified by X-ray diffraction and optical measurements. XRD analysis revealed that all films had a strong ZnO (200) peak, indicating c-axis orientation. The ZnO thin films are very transparent (92%) in the near vis regions. For the ZnO thin films deposited at a pressure of 0.086 Pa (6.5 × 10⁻⁴ Torr) optical energy band gap decreased from 3.21 eV to 3.19 eV with increasing the thickness. Urbach tail energy also decreased as the film thickness increased.Spectral dependence of the photoconductivity was obtained from measurements of the samples deposited at various thicknesses. Photoconductivities were observed at energies lower than energy gap which indicates the existence of energy states in the forbidden gap. Photoconductivities of ZnO thin films increase with energy of the light and reach its maximum value at around 2.32 eV. Above this value surface recombination becomes dominant process and reduces the photocurrent. The photoconductivity increases with decreasing the film thickness.     

Effect of substrate-induced strain on the morphological, electrical, optical and photoconductive properties of RF magnetron sputtered ZnO thin films

ZnO thin films have been grown by radio frequency (RF) magnetron sputtering on different substrates such as glass, quartz (z-cut), sapphire (0 0 1) and Si (1 0 0) in order to study the effect of substrate-induced strain along c-axis on the structural, electrical, optical and photoconducting properties of the films. The full width at half maximum for (0 0 0 2) peak increases while the crystallite size decreases with decrease in the compressive strain. The change in resistivity and carrier concentration has been related to the variation of strain. The resistivity of the films increases and the carrier concentration decreases exponentially with increasing the strain. The film on the quartz substrate shows higher UV emission intensity. The ultraviolet photosensitivity decreases with increase in the strain.     

Fast response ultraviolet Ga-doped ZnO based photoconductive detector

A metal-semiconductor-metal photoconductive detector was fabricated using high quality Ga-doped ZnO film epitaxially grown onto alumina substrate by spray pyrolysis. The photocurrent increases linearly with incident power density for more than two orders of magnitude. Reflectance and photocurrent measurements were carried out to study optoelectronic properties of Ga-doped ZnO thin film. Both spectra are consistent with each other showing good response in UV than visible region. Peak responsivity of about 1187 A/W at 5 V bias for 365 nm light was obtained in UV region.     

Mn-doped ZnO transparent conducting films deposited by DC magnetron sputtering

Mn-doped zinc oxide (ZnO:Mn) thin films with low resistivity and relatively high transparency were firstly prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. Influence of film thickness on the properties of ZnO:Mn films was investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. As the thickness increases from 144 to 479 nm, the crystallite size increases while the electrical resistivity decreases. However, as the thickness increases from 479 to 783 nm, the crystallite size decreases and the electrical resistivity increases. When film thickness is 479 nm, the deposited films have the lowest resistivity of 2.1 × 10^− 4 Ω cm and a relatively high transmittance of above 84% in the visible range.     

Characterization and humidity sensing of ZnO/42° YX LiTaO3 Love wave devices with ZnO nanorods

Love mode surface acoustic wave devices based on ZnO/42° YX LiTaO₃ were characterized with the thickness of the sputtered ZnO guiding layer varied from 250 nm to 1.18 μm. Phase velocity, temperature coefficient of resonant frequency, sensitivity, electromechanical coupling coefficient and humidity sensing of the Love mode SAW devices were studied as a function of the ZnO layer thickness. With increasing ZnO thickness over the range of thickness values we have examined, the sensitivity of 42° YX LiTaO₃ to liquid loading increased and the values of electromechanical coupling coefficient decreased. The device with a thickness of 250 nm showed the best humidity response. ZnO nanorods were grown on this device and its humidity sensing performance has been further improved due to their large surface-to-volume ratio of the ZnO nanorods.     

Comparative study on the characteristics of network and continuous Ni films

Ni films were deposited on anodic aluminum oxide (AAO) and SiO₂/Si(100) substrates at 300 K by direct current magnetron sputtering with the oblique target. The film thickness was 80 nm, 160 nm and 260 nm. The films grown on AAO substrates have a network structure while those deposited on SiO₂/Si(100) substrates are continuous. The network film consists of granules and is formed by granule connection. The granule consists of many fine grains. The granule size increases with increasing film thickness. The 80 nm-thick network film has a honeycomb-like structure. The continuous films grow with a columnar structure and the transverse size of columnar grains increases with increasing film thickness. All the network films show a Ni(111) diffraction peak while the 160 nm- and 260 nm-thick continuous films exhibit the Ni(111) and Ni(200) diffraction peaks. The network films have higher coercivity and residual magnetization ratio compared with the continuous films. The coercivity and the residual magnetization ratio increase with increasing film thickness for the network films while they are almost independent of the film thickness for the continuous films. A temperature dependence of the resistance within 5-200 K reveals that the 80 nm-thick network Ni film exhibits markedly a minimal resistance at about 40 K. A logarithmic temperature dependence of the conductance is verified at temperatures below 40 K. The temperature coefficient of resistance is smallest for the 80 nm-thick network film and is largest for the 260 nm-thick continuous film.     

Influence of oxygen pressure on elastic strain and excitonic transition energy of ZnO epilayers prepared by pulsed laser deposition

High quality ZnO epilayers (χ_min ∼ 10%) were prepared on Al₂O₃ (0 0 0 1) substrates at a temperature of 750 °C by pulsed laser deposition (PLD) with oxygen pressure of 0.015, 0.15, 1.5, and 15 Pa. The best crystalline quality and strongest intensity of UV photoluminescence were observed on ZnO layer with oxygen pressure of 15 Pa. It is probable due to the higher oxygen pressure lessens oxygen deficiency in the film. The tetragonal distortion e_T, which is caused by elastic strain in the epilayer, was determined by Rutherford backscattering/channeling. It reduces as a whole (from 0.93 to 0.65%) with the increase of oxygen pressure from 0.015 to 15 Pa and the excitonic transition energy simultaneously shows a weak blue shift.     

Novel synthesis of aligned Zinc oxide nanorods on a glass substrate by sonicated sol-gel immersion

For the first time, aligned ZnO nanorod structured thin films have been synthesized on a glass substrate, which had been coated with an Al-doped ZnO thin film, using the sonicated sol-gel immersion method. These nanorods were found to have an average diameter of 100 nm and an average length of 500 nm, with hexagonal wurtzite phase grew preferentially along the c-axis direction. A sharp ultra-violet (UV) emission centred at 383 nm corresponding to the free exciton recombination was observed in a room temperature photoluminescence (PL) spectrum. The prepared ZnO nanorod structured thin film is transparent in the visible region with an average transmittance of 78% in the 400-800 nm wavelength range and high absorbance properties in the UV region (< 400 nm). The results indicate that the prepared ZnO nanorods are suitable for ultra-violet photoconductive sensor applications.     

The role of the Zn buffer layers in the structural and photoluminescence properties of ZnO films on Zn buffer layers deposited by RF magnetron sputtering

Highly c-axis oriented ZnO thin films were grown on Si (100) substrates with Zn buffer layers. Effects of the Zn buffer layer thickness on the structural and optical qualities of ZnO thin films were investigated for the ZnO films with the buffer layers 90, 110, and 130 nm thick using X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) analysis techniques. It was confirmed that the quality of a ZnO thin film deposited by RF magnetron sputtering was substantially improved by using a Zn buffer layer. The highest ZnO film quality was obtained with a Zn buffer layer 110 nm thick. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.     

Low temperature pH dependent synthesis of flower-like ZnO nanostructures with enhanced photocatalytic activity

In the present study we have synthesized flower-like ZnO nanostructures comprising of nanobelts of 20 nm width by template and surfactant free low-temperature (4 °C) aqueous solution route. The ZnO nanostructures exhibit flower-like morphology, having crystalline hexagonal wurtzite structure with (0 0 1) orientation. The flowers with size between 600 and 700 nm consist of ZnO units having crystallite size of ∼40 nm. Chemical and structural characterization reveals a significant role of precursor:ligand molar ratio, pH, and temperature in the formation of single-step flower-like ZnO at low temperature. Plausible growth mechanism for the formation of flower-like structure has been discussed in detail. Photoluminescence studies confirm formation of ZnO with the defects in crystal structure. The flower-like ZnO nanostructures exhibit enhanced photochemical degradation of methylene blue (MB) with the increased concentration of ligand, indicating attribution of structural features in the photocatalytic properties.     

Structural,electrical and photoluminescence properties of ZnO:Al network films grown on nanochannel Al2O3 substrates by direct current magnetron sputtering with an oblique target

ZnO:Al network films were grown on nanochannel Al₂O₃ substrates at 300 K by direct current magnetron sputtering with an oblique target. The film thicknesses are 60 nm, 160 nm and 190 nm. The holes of the network films diminish with increasing film thickness. For the 60-nm thick film, the network is formed by connecting grains. For the 160-nm and 190-nm thick films, however, the network is formed by connecting granules. The granules consist of many small grains. All the network films have a wurtzite structure. The 60-nm and 160-nm thick network films mainly have a [1 0 1] orientation in the film growth direction while the 190-nm thick network film grows with a random crystallographic orientation. A temperature dependence of the resistance within 160–300 K reveals that the network films exhibit a semiconducting behavior and their carrier transport mechanism is thermally activated band conduction. Room temperature photoluminescence spectra for wavelengths between 300 nm and 700 nm reveal a violet emission centered at 405 nm for the 60-nm thick network film and a blue emission centered at 470 nm for both the 160-nm and the 190-nm thick network films. Annealing decreases the resistivity of the network film.     

Anomalous electrical transport properties of nonstoichiometric nickel ferrite below room temperature

The transport properties of nonstoichiometric nickel ferrite nanoparticles synthesised by the co-precipitation method followed by mechanical milling is reported here. The particle size of ferrite phase in the ball milled samples is found to be ranging from ∼3.5 nm to ∼14 nm but in the un-milled sample it becomes ∼75 nm. A minimum in the conductivity has been observed in dc conductivity versus temperature variation while the activation energies of all the samples show an increasing trend with increasing milling time. The alternating current conductivity has been described by power law σ′(f,T) ∝ f^sTⁿ. The frequency exponent ‘s’ shows anomalous behavior, while the magnitude of the temperature exponent ‘n’ strongly depends on frequency. The dc and ac magnetoresistivities have been observed to be negative. Although the grain boundary contribution is predominated over grain contribution, the magnitude of both grain and grain boundary resistances reduce to lower value under the application of magnetic field.     

Preparation and colossal magnetoresistance in a trilayer La0.67Sr0.33MnO3/La0.75MnO3/La0.67Sr0.33MnO3 device by dc magnetron sputtering

Epitaxial trilayer films of La_0.67Sr_0.33MnO₃ (LSMO)/La_0.75MnO₃ (L0.75MO)/La_0.67Sr_0.33MnO₃ (LSMO) have been prepared on (0 0 1) oriented LaAlO₃ substrates by dc magnetron sputtering. The structure and MR are studied. All as-deposited trilayer films exhibit a semiconductor to metal transition at temperature ranging from 116 to 185 K. The MR is also shown to be dependent on the thickness of the middle oxide layer. A maximum MR value of 32% (ΔR/R₀) has been obtained at 132 K under 0.4 T magnetic field for a LSMO (300 nm)/L0.75MO (70 nm)/LSMO (300 nm) trilayer film. The MR of trilayer film prefers to that of both LSMO and L0.75MO single layer films.     

Structural properties of low-temperature grown ZnO thin films determined by X-ray diffraction and X-ray absorption spectroscopy

The epitaxial growth of ZnO thin films on Al₂O₃ (0001) substrates have been achieved at a low-substrate temperature of 150 °C using a dc reactive sputtering technique. The structures and crystallographic orientations of ZnO films varying thicknesses on sapphire (0001) were investigated using X-ray diffraction (XRD). We used angle-dependent X-ray absorption near-edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) spectroscopy to examine the variation of local structure. The XRD data showed that the crystallinity of the film is improved as the film thickness increases and the strain is fully released as the film thickness reached about 800 Å. The Zn K-edge XANES spectra of the ZnO films have a strong angle-dependent spectral feature resulting from the preferred c-axis orientation. The wurtzite structure of the ZnO films was explicitly shown by the XRD and EXAFS analysis. The carrier concentration, Hall mobility and resistivity of the 800 Å-thick ZnO film were 1.84 × 10¹⁹ cm^− 3, 24.62 cm²V^− 1s^− 1, and 1.38 × 10^− 2 Ω cm, respectively.     

Size effects of polycrystalline lanthanum modified Bi4Ti3O12 thin films

The film thickness dependence on the ferroelectric properties of lanthanum modified bismuth titanate Bi_3.25La_0.75Ti₃O₁₂ was investigated. Films with thicknesses ranging from 230 to 404 nm were grown on platinum-coated silicon substrates by the polymeric precursor method. The internal strain is strongly influenced by the film thickness. The morphology of the film changes as the number of layers increases indicating a thickness dependent grain size. The leakage current, remanent polarization and drive voltage were also affected by the film thickness.     

Effect of thermal annealing treatment on structural, electrical and optical properties of transparent sol-gel ZnO thin films

Effect of thermal annealing in different ambients on the structural, electrical and optical properties of the sol-gel derived ZnO thin films are studied. XRD results show that the annealed ZnO films with wurtzite structure are randomly oriented. Crystallite size, carrier concentration, resistivity and mobility are found to be dependent on the annealing temperature. The change in carrier concentration is discussed with respect to the removal of adsorbed oxygen from the grain boundaries. The highest carrier concentration and lowest resistivity are 8 × 10¹⁸ cm⁻³ and 2.25 × 10⁻¹ Ω cm, respectively, for the film annealed at 500 °C in vacuum. The annealed films are highly transparent with average transmission exceeding 80% in the wavelength region of 400-800 nm. In all three ambients, the optical band gap value does not change much below 500 °C temperature while above this temperature band gap value decreases for nitrogen and air and increases for vacuum.     

Synthesis of ZnO flowers and their photoluminescence properties

Flower-like ZnO nano/microstructures have been synthesized by thermal treatment of Zn(NH₃)₄²⁺ precursor in aqueous solvent, using ammonia as the structure directing agent. A number of techniques, including X-ray diffraction (XRD), field emission scan electron microscopy (FESEM), transmission electron microscopy (TEM), thermal analysis, and photoluminescence (PL) were used to characterize the obtained ZnO structures. The photoluminescence (PL) measurements indicated that the as-synthesized ZnO structures showed UV (∼375 nm), blue (∼465 nm), and yellow (∼585 nm) emission bands when they were excited by a He-Gd laser using 320 nm as the excitation source. Furthermore, it has been interestingly found that the intensity of light emission at ∼585 nm remarkably decreased when the obtained ZnO nanocrystals were annealed at 600 °C for 3 h in air. The reason might be the possible oxygen vacancies and interstitials in the sample decreased at high temperature.     

Detection of various self-assembled monolayers by AlN-based film bulk acoustic resonator

Various self-assembled monolayers such as carcinoembryonic antigen (CEA), beta actin, and bovine serum albumin (BSA) were detected using an AlN-based film bulk acoustic resonator (FBAR). AlN thin film was deposited by reactive RF magnetron sputtering, on a substrate of Mo (100 nm)/Ti (34 nm)/SiO₂ (480 nm)/Si (300 μm)/Si₃N₄ (300 nm). The film showed a strongly c-axis preferred orientation with a main (0 0 2) peak, as well as a good full width at half maximum (FWHM) of 2.50° in XRD and rocking curve results. The AlN-based FBAR was confirmed to have a resonant frequency of 2.477 GHz and a sensitivity of 3514 Hz cm²/ng. In beta actin, BSA, and CEA, the frequency properties showed variation values of 472.142, 932.573, and 685.421 kHz and mass sensitivities of 3530, 3506, and 3514 Hz-cm²/ng, respectively. The FBAR sensor was confirmed to be very useful for detecting target antigens through the binding of an antigen and an anti-body.     

A template-free alcoholthermal route to Ti(Sn)-doped ZnO nanorods

Ti(Sn)-doped single-crystalline ZnO nanorods with an average diameter of 20 nm and length up to nearly 1 μm were synthesized by a facile ultrasonic irradiation-assisted alcoholthermal method without involving any templates. Photoluminescence spectra of the Ti-doped ZnO nanorods were measured at room temperature and three emitting bands, being a violet emission at 400-415 nm, a blue band at 450-470 nm and a green band at around 550 nm, were detected. The emission intensities of the Ti-doped ZnO nanorods enhance gradually with increasing the doping concentrations. As to the Sn-doped ZnO nanorods, the green emission shifts to 540 nm and the emission intensities increase first but decrease later with increasing the doping concentrations.