美国数字红利频谱释放政策研究与启示

数字红利频谱释放工作因涉及面广、情况复杂,近几年受到社会的广泛关注.首先结合地面广播电视数字化进程,概述了美国数字红利频谱释放情况,然后分别对美国700 MHz、600 MHz频段频谱释放政策、进展以及成果等进行梳理和研究,总结提炼出“依法行政、强制推进、市场机制、稳妥有序、自愿协商”的方法与经验,最后结合我国使用现状,提出相关建议.     

澳大利亚700MHz数字红利频谱的现状和启示

广播电视数字化后释放出大量广播频段的频谱,带来的数字红利是社会广泛关注的热点.根据ITU的区域划分,澳大利亚与中国同属第3区.介绍澳大利亚700 MHz数字红利频谱释放的基本情况,对我国数字红利频段的规划和使用起到参考作用.     

国外动态

Ofcom称英国800MHz频谱可能干扰数字电视信号 英国通信监管机构Ofcom称，未来用于移动业务的800MHz频谱可能会对广播电视信号造成干扰，因此接下来数字红利频谱的投标人要为解决干扰问题支付一定费用。     

ICT新词

数字红利频谱 随着模拟电视转向数字电视,传输效率有了极大提高,在广电占用的700MHz频段中将节省出一定数量的频谱以重新利用。与这些频谱的再分配相伴而生的利益,被人们称为“数字红利”或称“频谱红利”。由于现有和新增的移动宽带网络正快速地消耗着目前所分配的频段,同时运营商也迫切需要为广大农村地区提供覆盖连接,因此,“数字红利”被美国、欧洲等全球运营商视为宝贵的资源。     

全球数字红利频谱释放现状及展望

数字红利频谱对于公众移动通信的发展有着非常重要的意义。首先,分析了全球移动通信的发展趋势,表明对频谱需求量急剧增长,特别是对数字红利频谱的需求;然后,概述了全球地面广播电视模数转换情况,从国际标准化和世界重要地区两个维度分析了全球数字红利频谱如何用于移动通信;最后,总结了全球数字红利所面临的机遇、问题和挑战,对未来数字红利频段全球合理使用提出了建议。     

澳大利亚

澳大利亚通信与媒体管理局（ACMA）日前完成了数字红利频谱的拍卖,政府共获得约20亿澳元（约15亿欧元）的收入。据悉,共有三家公司参与竞拍。澳大利亚电信（Telstra）投入资金最多,以13亿澳元拍得了700MHz频段的2×20MHz频谱和2.5GHz频段的2×40MHz成对频谱。新加坡电信旗下的澳都公司（Optus）的投入金额约为Telstra的一半,拍得了700MHz频段的2×10MHz频谱和2.5GHz频段的2×20MHz成对频谱。互联网服务提供商TPG以总价1350万澳元拍得了2.5GHz频段的2×10MHz成对频谱。TPG目前并无任何自有移动网络基础设施,其在澳大利亚转售Optus公司的移动服务。     

综合报道

诺基亚西门子新闻携手诺基亚联手完成全球首例800 MHz LTE呼叫近日,诺基亚西门子通信与诺基亚联手完成了全球首例800 MHz频带端到端LTE数据呼叫。该频谱又名数字红利,此次兼容性测试的成功标志着该频带LTE技术距离商用又迈进了一大步,尤其加快了在郊区部署的步伐。     

广电700MHz频谱:停止滥用,回归全球共识

近日有报道称,广电方面在贵阳组织召开了《广播电视有线、无线、卫星协同覆盖智能承载网技术体制标准研究及应用示范》项目验收会.之前,广电的贵州、甘肃、广东和重庆等4省(市)有线电视运营商正在稳步推进700MHz无线网的落地工作.其中,2016年6月初,甘肃与贵州广电分别以无线城市建设项目及贵遵高速公路免费系统为试点,建设并运行了700MHz的Wi-Fi网络,并投入试运行.至此,正式拉开广电全面占用模/数转换后释放的700MHz“数字红利频段”的帷幕.     

数字红利频段的回收再分配

当前,对数字红利频段的再分配成为各国促进移动宽带发展的重要举措。从其他国家和地区的经验看,各国普遍采取强制手段回收数字红利频谱,然后主要通过拍卖方式进行分配,而且,越来越多的国家倾向予将数字红利和高频段频谱同时拍卖。但在数字红利频段再分配过程中,还需要解决基站的干扰和区域协调等问题。     

南海白频谱占用度的测量和分析

为了掌握数字红利频谱在南海上的实际利用情况,根据最新的频谱占用度建议书ITU-R SM.1880以及移动监测设备建议书ITU-R SM.1723-2,搭建海上移动测量软硬件环境,对该频段在环海南岛近海海域的频谱占用度进行实际的移动测量,并根据李氏定律进行采样,最后分析所得数据,得出时间-频率-占用度的对照图,测试结果显示被测海域的数字红利频谱利用率偏低。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.