共查询到15条相似文献,搜索用时 93 毫秒
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通过定向合成Cu(I)配合物,首次将 其作为阴极缓冲层引入到有机太阳能电池(OSCs)中。实验分析发现,OSCs的光电能量转换效 率(PCE)与CuBB层厚度紧密相关,在标准太阳 光照条件下,结构为ITO/CuPc (20nm)/C60(40nm)/CuBB (x m m)/Al (100nm)的器件PCE随着CuBB厚度的增加 先增大后变小,当厚为8nm 时PCE达到0.94%。器件性能提高的原因主要是CuBB具有良好 的电子迁移率,但厚度过大时则由于串联电阻增加及电子不能经阴极缓冲层传输而使性能降 低。 相似文献
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采用NTCDA/PTCBI双阴极修饰层制备了结构为ITO /MoO3/Rubrene/C70/NTCDA/PTCBI/Al有机太阳能 电池(OSC),研究了双阴极修饰层对Rubrene/C70 OSC性能的影 响。实验结果表明,引入双阴极修饰层 后,器件的各性能参数有了显著提高。通过对PTCBI厚度优化发现,当PTCBI厚为5nm时器件 的各性 能参数最佳,器件的功率转换效率(PCE)=3.19%,电流密度Jsc=8.99mA·cm-2,开路电 压Voc=0.85V, 填充因子(FF)=41.58%,与未插入PTCBI 层相比器件的各性能分别提高了538%、338.5% 、13.3%和16.5%。 相似文献
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有机太阳能电池(OSCs)因成本低、质量轻、柔性 和可大面积制备等优点而被广泛关注。本文通过定向合成有机配合物Re-BCP,首次将其作 为阴极缓冲层引入到OSCs中。通过实验发现,OSCs效率与Re-BCP层厚度密切相关。在标准 太阳光照条件下,结构为ITO/CuPc(20nm)/C60(40nm)/Re-BCP(x nm)/Al(100nm)器件的效率随着Re-BCP厚度的增加先增大后变 小,当其厚为0nm时,效率为0.65%;厚为7nm时,效率为1.10%;而当厚为10nm时,效率降为0.50%。结合器件结构,探讨了器件性能提高的机理。 相似文献
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为了改善GaAs(110)与自身 氧化物界面由于高表面态密度而引起的费米能级钉扎(pinning)问题 ,提出采用射频磁控溅射技 术在GaAs(110)衬底上沉积一定厚度 ZnO薄膜作为钝化层,并利用光 致发光(PL)光谱和X射线光电子能谱(XPS) 等方法对ZnO薄膜的光学特性及钝化性能进行表征。实验结果表明,经ZnO薄膜钝化后的 GaAs样品,其本征PL峰强度提高112.5%,杂质峰强度下降82.4%。XPS光谱分析表明,Ga和As原子的比值从1.47降低 到0.94,ZnO钝化层能 够抑制Ga和As的氧化物形成。因此,在GaAs表面沉积ZnO薄膜是一种可行的GaAs表面钝化 方法。 相似文献
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以醇溶性的钛螯合物乙酰丙酮氧钛(TOPD)为电子收集层,聚3-己基噻吩(P3HT)为电子给体,富勒烯衍生物(PC60BM或PC70BM)为电子受体,制备了高效本体异质结聚合物太阳电池。TOPD膜是通过旋涂TOPD异丙醇溶液,然后在空气中经60℃热退火15min得到。通过优化TOPD层厚度及器件制备工艺,显著提高了聚合物太阳能电池的短路电流。通过引入TOPD电子收集层,使基于P3HT:PC60BM活性层的太阳能电池在AM1.5G、100mW·cm-2的光照条件下光-电转换效率(PCE)由2.72%提高到3.65%。用PC70BM代替PC60BM,可以使电池的PCE进一步提高到3.96%。PCE的提升主要归结于TOPD的层的引入可以提高电子传输速率并且可以降低电池的串联电阻。除此之外,TOPD替代常用的低功率金属Ca作为阴极修饰材料,可以有效提高聚合物质太阳能电池器件的工作稳定性。 相似文献
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采用聚氧化乙烯(PEO)作为聚合物太阳能电池的阴极修饰层,以P3HT:PCBM为活性层制备了聚合物本体异质结太阳能电池。考察了PEO的厚度对器件光伏性能及稳定性的影响。比较了加入PEO修饰层前后器件的稳定性,研究了采用PEO修饰层前后器件电阻的差异。结果表明:加入PEO作为阴极修饰层后器件的光电性能(JSC,VOC,FF,PCE)均有明显提高,而器件的串联电阻Rs则有了明显降低。没有阴极修饰层的器件的初始光电转换效率为1.92%,90 h后衰减为初始值的5%;而加入PEO修饰层后初始光电转换效率为3.36%,90 h后仅衰减为初始值的20%,光电转换效率提高了75%,稳定性提高了3倍。 相似文献
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选用CuPc(酞菁酮)为供电子的材料,使用Bphen(4,7-二苯基-1,10-邻二氮杂菲)为缓冲层的材料,研究了结构为ITO/PEDOT:PSS/CuPc(20 nm)/C60(40 nm)/Bphen(x)/Ag(100 nm)的有机太阳能电池(OSC).考察OSC性能与缓冲层Bphen厚度之间的关系,优化器件的结构.在标准太阳光照条件下(AM1.5)测量器件的Ⅰ-Ⅴ特性,结果显示,太阳电池的能量转换效率与缓冲层厚度密切相关.采用高真空蒸发的方法,制作了结构为ITO/PEDOT:PSS/CuPc(20 nm)/C60(40 nm)/Bphen(x)/Ag(100 nm)的器件,器件效率随着Bphen厚度的增加先增大后变小,当厚度为0 nm时,效率为0.85%;当厚度为2.5 nm时,效率为1.22%;而当厚度为5 nm时,效率为1.69%;当厚度为7.5 nm时,效率则为0.79%,当厚度为10 nm时,效率则为0%. 相似文献
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We report high photovoltaic efficiency of over 9% in solution-processed, small-molecule (SPSM) 7,7′-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b′]dithiophene-2,6-diyl)bis(6-fluoro-4(5′-hexyl-[2,2′-bithiophen]-5-yl)benzo[c]1,2,5]thiadiazole) p-DTS(FBTTh2)2:[6-6]-phenyl C70 butyric acid methyl ester (PC70BM) blend based inverted BHJ solar cell by incorporating luminescent zinc oxide doped with sodium (ZnO:Na) quantum dots (QD) (l-ZnO) as a cathode buffer layer (CBL) in inverted bulk-heterojunction (BHJ) solar cells for the first time. The l-ZnO absorbs ultraviolet (UV) light and down-converts it to visible light. The l-ZnO layer's emission overlaps significantly with the absorption of p-DTS(FBTTh2)2, leading to an enhanced absorption by p-DTS(FBTTh2)2. This resulted in a significant enhancement of photo-current from 15.4 to 17.27 mA/cm2 and efficiency from 8% to 9.2% for ZnO and l-ZnO based devices, respectively. This is among one of the highest efficiency values reported so far in the case of SPSM based single junction BHJ solar cells. The luminescent ZnO layer also protects the active layer from UV-induced degradation as solar cells show high stability under constant solar light illumination retaining more than 90% (∼28 h) of its initial efficiency, whereas BHJ solar cells without the luminescent ZnO layer degraded to ∼50% of its initial value under same conditions. Since ZnO is an essential part of inverted organic solar cells, the luminescent l-ZnO CBL has great potential in inverted organic solar cells. 相似文献
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退火方式及PCBM阴极修饰层对聚合物太阳电池的影响 总被引:1,自引:0,他引:1
研究了不同退火方式及PCBM阴极修饰层对聚合物太阳电池性能的影响。与前退火相比,后退火的器件性能显著提高,电池的开路电压Voc由0.36V增加到0.60V,能量转换效率η从0.85%提高到1.93%,短路电流密度Jsc和填充因子FF也有不同程度的改善;在电池的活性层与Al电极间沉积一定厚度的PCBM阴极修饰层也能改善电池的性能,当PCBM厚度为3nm时,聚合物太阳电池在100mW.cm-2强度光照下,Voc为0.59V,Jsc为6.43mA.cm-2,FF为55.1%,η为2.09%。 相似文献
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Cathode buffer layer (CBL) introduced between the active layer and cathode is crucial for selectively transporting electrons and blocking holes for polymer solar cells (PSCs). Calcium (Ca) is the most commonly used CBL in conventional-structure bulk heterojunction (BHJ) PSC devices, but is prone to oxidation due to its high reactivity, inhibiting its practical applications. Herein, we applied an alcohol-soluble fullerene aminoethanol derivative (C60-ETA) as an efficient CBL surpassing Ca in conventional-structure BHJ-PSC devices, leading to obvious efficiency enhancement with the best power conversion efficiency (PCE) reaching 9.66%. C60-ETA CBL was applied in PSC devices based on three different photoactive layer systems, including poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)-benzo[1,2-b:4,5-b′]dithiophene-co-3-fluorothieno[3,4-b]thiophene-2-carboxylate]:[6,6]-phenyl C71-butyric acid methyl ester (PTB7-Th:PC71BM), polythieno[3,4-b]thiophene-co-benzodithiophene (PTB7):PC71BM and poly(4,8-bis-alkyloxybenzo(l,2-b:4,5-b′)dithiophene-2,6-diylalt-(alkylthieno(3,4-b)thiophene-2-carboxylate)-2,6-diyl) (PBDTTT-C):PC71BM, affording the best PCE of 9.66%, 8.51% and 7.19%, respectively, which are all higher than those of the corresponding devices based on the commonly used Ca CBL. The mechanism of efficiency enhancement of C60-ETA CBL relative to Ca is studied, revealing that C60-ETA CBL may induce improvements on both the interfacial contact between the active layer/cathode and electron transport, facilitating electron extraction by the Al cathode, and consequently leading to the increase of short-circuit current density (Jsc), which contributes primarily to the PCE improvement. 相似文献