有限域GF（2^m）上的一个新的求逆算法

根据有限域ＧＦ（２＾ｍ）上的正规基表示和Ｍａｓｓｅｙ－Ｏｍｕｒａ乘法器，本文提出了一个复杂性为Ｏ（ｌｏｇｍ）的求逆算法。新算法完成一次求逆运算只需要「ｌｏｇ２（ｍ－１）」＋ｗ（ｍ－１）－１次乘法和ｍ－１次循环移位，这里「ｘ」表示小于等于ｘ的最大整数，ｗ（ｍ－１）表示ｍ－１的二进制表示中“１”的个数。     

C60 LB单分子膜的电光Pockels效应

用电光调制衰减全反射光谱技术研究了Ｃ６０与花生酸混合的ＬＢ单分子膜的Ｐｏｃｋｅｌｓ（普克尔）效应。测量得到Ｃ６０ＬＢ膜的二阶非线性光学系数χ（２）（－ω;ω,０）＝０．５×１０－１２ｍ／Ｖ（１．３×１０－９ｅｓｕ）。这一结果与用光学二次产生测量Ｃ６０热蒸发膜的χ（２）（－２ω;ω,ω）同一数量级。并利用单分子层模型计算了Ｃ６０分子的超极化率为β＝１．１×１０－３０ｅｓｕ。     

衬底温度对VUV光直接光CVD SiO2／Si界面缺陷的影响

研究了ＶＵＶ（真空紫外）光直接光ＣＶＤ（化学汽相淀积）ＳｉＯ２／Ｓｉ界面微结构缺陷与衬底温度（Ｔｓ）的关系。实验结果表明：在３２℃￣１８０℃的温度范围内，与Ｓｉ－Ｏ－Ｓｉ伸缩模相对应的ＩＲ峰位随Ｔｓ的降低从１０６０ｃｍ＾－１增加到１０８０ｃｍ＾－１。固定氧化物电荷密度（ΔＮｏｔ）在Ｔｓ〉１２０℃后，呈正电性，与位于３．１０ｅＶ的氧空位缺陷相关；在Ｔｓ〈１００℃一侧，呈负电性，与２．８４ｅＶ能级位置     

不锈钢基底高电流密度YBCO超导线材

室温下应用Ａｒ＋ 离子源辅助准分子脉冲激光沉积（００２）取向的ＹＳＺ（Ｙｔｔｒｉａ－ｓｔａｂｉｌｉｚｅｄ ｚｉｒｃｏ－ｎｉａ）过渡层薄膜于不锈钢基底上;基底加温至７５０℃,用准分子脉冲激光沉积高电流密度ＹＢＣＯ（ＹＢａ２Ｃｕ３Ｏ７－ ｘ） 高温超导线材。实验结果表明：ＹＢＣＯ 超导线材临界温度Ｔｃ ≥９０ Ｋ （Ｒ＝０）,临界电流密度Ｊｃ ≥１×１０６ Ａ／ｃｍ ２（７７ Ｋ,０ Ｔ）。     

离子束合成TiSi2薄膜及显微结构的研究

本文主要以电子显微镜为手段研究了离子注入形成的ＴｉＳｉ２薄膜的微观结构，发现了一种新的ＴｉＳｉ２相，初步确定它为简单正交结构，点阵常数与已知的Ｃ４９－ＴｉＳｉ２相等，并发现新的ＴｉＳｉ２可向Ｃ４９－ＴｉＳｉ２转化；在８００℃条件下保温３０分钟，Ｃ５４－ＴｉＳｉ２可在Ｓｉ（１１１）基片上外延生长，取向关系为：「１２１」ＴｉＳｉ２「１１０」ｓｉ，（１１１）ＴｉＳｉ２（１１１）ｓｉ。     

紫外线诱变固体DNA的拉曼光谱研究

报道了用拉曼光谱法测定紫外线诱变脱氧核糖核酸（ＤＮＡ）前后的拉曼散射结果。实验结果表明,经过紫外线诱变以后,Ａ－ＤＮＡ型结构特征谱线８１０ｃｍ＾－１减弱;分别反应脱氧核糖磷酸盐链振动和Ｃ０Ｏ伸缩振动的谱带８８４ｃｍ＾－１和１０１０ｃｍ＾－１、１０６８ｃｍ＾－１都有不同程度的 减弱;属于脱氧核糖在１４６８ｃｍ＾－１处的谱线显著减弱;还有个别咸基谱带出现（在６７０ｃｍ＾－１处的胸腺嘧啶Ｔ）、增强（在     

关于高度非线性平衡布尔函数的构造

本文利用Ｗａｌｓｈ谱分析了文献「１」中所构造的布尔函数的非线性度；证明了Ｆ＾２ｋ２上不存在满足２ｋ－１次扩散准则的平衡布尔函数。     

Au／Sn与p—HgCdTe的欧姆接触

研究了双层金属结构Ａｕ／Ｓｎ与ｐ－ＨｇＣｄＴｅ上的接触电阻，实验测得Ａｕ／Ｓｎ与ｐ－Ｈｇ１－ｘＣｄＴｅ（ｘ＝０．２１７，０．４１）的经接触电阻，ρｃ（２９５Ｋ，７７Ｋ）为１０＾－２～１０＾４Ω．ｃｍ＾２将这种电板接触应用于Ｈｇ１－ｘＣｄｘＴｅ（ｘ＝０．２３）光伏器件，测得ｐｎ结Ｉ－Ｖ特性的正向斜率为１２．６Ω即电极接触电阻小于１２．６Ω。     

化学氧碘激光器中O2（^1△g）的气相传输规律

本文通过对Ｏ２（＾１△ｇ）气相传输动力学的分析，得到了Ｏ２（＾１△ｇ）的气相传输规律，并进一步对Ｒｉｃｈａｒｄｓｏｎ、Ｔａｋｅｈｉｓａ等人的实验结果进行了分析，得到了统一的结论。     

2.25Cr-1Mo钢焊接接头蠕变后焊缝中 M6C碳化物的析出位向关系

本文用透射电镜研究了２．２５Ｃｒ－１Ｍｏ钢焊接接头蠕变后焊缝中的Ｍ６Ｃ碳化物。结果表明,高温长期蠕变促进了Ｍ６Ｃ的析出长大,从焊缝内析出的Ｍ６Ｃ与α－Ｆｅ铁素体间存在Ｎ－Ｗ位向关系,即：（１１１）Ｍ６Ｃ∥（１１０）ａ「０１１）Ｍ６Ｃ∥「００１」ａ。文中还讨论分析了其他两种取向关系：（１１１）Ｍ６Ｃ∥（１１０）ａ;「１０１」Ｍ６Ｃ∥「１１１「ａ及（１１１）Ｍ６Ｃ∥（１１０）ａ;「１１２」Ｍ６Ｃ∥「１     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.