共查询到20条相似文献,搜索用时 78 毫秒
1.
离子注入金属材料表面改性 总被引:4,自引:0,他引:4
本文着重叙述了最近以来离子注入金属材料改性新的进展。离子注入金属的研究,其研究对象品种繁多,需要高注量,且样品形状复杂,因此离子注入金属中的物理问题比半导体离子注入更加复杂。包括各种离子注入多种金属所出现的溅射腐蚀、倾斜注入、特球形状注入、离子浓度分布、注入条件与金属相变的关系以及离子注入提高耐磨损机理等诸多难题。离子注入金属材料改性研究近年来极为活跃,已发表了不少评论文章。希望这篇评论能对从事离子束材料改性工作的人员有所帮助。 相似文献
2.
利用国内第一台金属蒸汽真空弧(MEVVA)离子源引出的钼离子对H13钢进行了不同束流密度下的注入。根据以碰撞和扩散理论为基础的YJH1程序计算了钼在H13钢中的分布。背散射(RBS)证明了这种计算的合理性。电镜(TEM)分析表明:随着束流密度的增大,注入层内将有钼化物出现。最后讨论了析出的钼化物对杂质浓度深度分布的影响。 相似文献
3.
离子注入H13钢注入层微观结构的研究 总被引:1,自引:0,他引:1
本文利用TEM研究了Si,Ti离子注入H13钢注入层微观结构。结果表明:Si离子注入后,导致表面注入层微晶化及部分非晶化,内注入层多晶化;Ti离子注入后,表面注入层则完全非晶化,内注入层微晶化。 相似文献
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
Ashawant Gupta Carmen Cook Len Toyoshiba Jianmin Qiao Cary Y. Yang Ken-Ichi Shoji Akira Fukami Takahiro Nagano Takashi Tokuyama 《Journal of Electronic Materials》1993,22(1):125-128
Characterization of a Si1−xGex layer formed by high-dose germanium implantation and subsequent solid phase epitaxy is reported. Properties of this layer
are obtained from electrical measurements on diodes and transistors fabricated in this layer. Results are compared with those
of the silicon control devices. It was observed that the germanium implantation created considerable defects that are difficult
to eliminate with annealing. These defects result in boron deactivation in the p-type regions of the devices, giving rise
to larger resistance. Optimization of the device structure and fabrication process is discussed. 相似文献
14.
为了实现不锈钢微细电解定域加工,提出激光掩膜表面改性微细电解复合加工技术。研发了激光掩膜微细电解复合加工装置,并进行样件加工试验。首先,采用光纤激光在304不锈钢表面扫描加热进行打标图案,利用X射线光电子能谱分析(XPS)对不锈钢表面激光打标图案进行分析,发现激光在不锈钢表面打标时被空气氧化生成铁、铬等氧化物,生成的打标图案具有耐腐蚀性,形成保护性掩膜。然后进行电解加工,由于掩膜图案在电解过程中起到保护作用,选择合适的电解加工参数,在不锈钢表面能加工复杂的微结构。最后利用SEM、光学轮廓仪来观测微结构形貌、粗糙度等。研究结果表明:利用激光表面改性,结合微细电解加工能实现304不锈钢微结构的快速加工,该工艺在微细加工领域具有很好的发展前景。 相似文献
15.
16.
本文研究了利用等离子体氮化形成ZrON/GeON双钝化层制备Ge MOS器件的界面特性和电特性。结果发现,相比于N2等离子处理,NH3等离子处理制备的双钝化层显著改善了器件的界面和电特性,获得了低的界面态密度 (Dit = 1.64×1011 cm-2 eV-1)和栅极漏电流(Jg = 9.32×10-5 A cm-2@Vfb +1 V),小的电容等效厚度 (CET = 1.11 nm)以及高的k值 (32). XPS分析表明,由NH3等离子体分解出的H原子和NH基团可以有效促进Ge表面不稳定低k GeOx的挥发,从而形成了高质量的GeON钝化层;且NH3等离子体氮化导致更多氮在ZrON/GeON中结合,能更有效阻止O、Ti、Ge等元素间的相互扩散,从而获得好的界面质量和电特性。 相似文献
17.
Wet oxidations of (100) silicon implanted with an arsenic dose of 2 × 1016 cm−2 and an energy of 30 keV were carried out in the temperature range between 600 and 900° C. The oxidation rate is increased
on the arsenic implanted samples up to a factor of 2000 as compared to undoped samples. During these oxidations the arsenic
suicide phase AsSi is precipitated at the oxide/silicon interface. After short oxidation times at 600° C, a continuous AsSi
layer is found. It is dissolved during extended oxidation times and finally almost all As is incorporated in the oxide. After
900° C oxidations, substantial AsSi crystallites remain at the Si/SiO2 interface. They are still observed up to the larg-est oxide thickness grown (2.3 μm). The AsSi phase and the distribution
of the im-planted arsenic were analyzed by TEM, SIMS and XRF measurements. 相似文献
18.
为了提高SUS 304不锈钢表面的耐磨损、耐腐蚀性能,采用激光表面合金化的方法制备了Cr-CrB2层,并进行了理论分析和实验验证,取得了合金化层的组织和物相以及电化学腐蚀性数据。结果表明,合金化层组织致密、晶粒细小,与基体形成冶金结合,合金化层由奥氏体、马氏体、铁铬固溶体、碳化物和铬硼化合物组成;合金化层的耐蚀性得到提高,腐蚀速率降低,合金化层的极化曲线具有较长的活化-钝化区间;不锈钢基体发生严重的晶界腐蚀和点蚀,晶界腐蚀以孪晶晶界腐蚀为主,合金化层表面发生晶粒间的晶界腐蚀,伴有晶粒和晶界处的点蚀现象,点蚀坑明显小于基体表面的点蚀坑。这一结果对提高SUS 304不锈钢表面的耐磨损、耐腐蚀性是有帮助的。 相似文献
19.
In this study we evaluate the effects of dual implantation with different doses of Si and P on dopant activation efficiency
and carrier mobility in InP:Fe. The implants were activated by a rapid thermal annealing step carried out in an optimized
phosphoruscontaining ambient. For high dose implants (1014–1015 cm−2), which are typically employed for source/drain regions in FETs, dual implantation of equal doses of Si and P results in
a higher sheet carrier concentration and lower sheet resistance. For 1014 cm−2 Si implants at 150 keV, the optimal P co-implant dose is equal to the Si dose for most anneal temperatures. We obtain an
activation efficiency of ∼70% for dual implanted samples annealed at 850° C for 10 sec. The high activation efficiencies and
low sheet resistances obtained in this study emphasize the importance of stoichiometry control through the use of P co-implants
and a phosphorus-containing ambient during the thermal processing of InP. 相似文献
20.
碳纳米管对Ni60激光熔覆层的耐蚀性影响 总被引:2,自引:0,他引:2
利用自动送粉激光熔覆技术,在A3钢表面进行了Ni60合金添加碳纳米管的激光熔覆实验,采用静态浸泡法对相同工艺条件下获得的纯Ni60熔覆层和碳纳米管/镍基熔覆层的耐腐蚀性进行研究,在光学显微镜下观察样品表面腐蚀形貌,并对碳纳米管/镍基熔覆层的腐蚀机理进行了分析.结果表明:当碳纳米管的含量为0.3 wt%时,碳纳米管/镍基激光熔覆层的耐腐蚀性能最好,与纯Ni60激光熔覆层相比,耐腐蚀性提高1倍多.碳纳米管/镍基激光熔覆层耐腐蚀的原因在于熔覆层保留的碳纳米管使熔覆层更加致密,隔离了腐蚀介质,促进了镍基合金的钝化,从而提高了熔覆层的耐蚀性;同时,熔覆层中保留下来的碳纳米管和被分解的碳纳米管与金属基体形成碳化物,作为增强相均匀弥散在熔覆层中,它们的存在阻止了腐蚀坑的长大,因而蚀坑较小,耐腐蚀性得到提高. 相似文献