光电倍增管的脉冲工作调制

我们在用脉冲调制~3T(d,n)~4He的14兆电子伏中子源进行缓发中子测铀井的室内模拟试验中,采用塑料闪烁体记录~(16)O(n,p)~(16)N(T~1/2=7.13秒)β-~(16)O·γO~(16)反应产生的γ射线(Eγ约7.12和6.13兆电子伏)来监视中子源产额。塑料闪烁体因受到14兆电子伏中子的(n,Xγ)反应产生的强瞬发γ射线的照射,光电倍增管的输出电流波动很大,影响对~(16)O衰变的γ射线的测量。为减小管子输出电流的波动,采用     

2.06MeV氘核引起的~7Li(d,n)反应中子能谱

用茋晶体闪烁谱仪和石蜡球壳慢化谱仪测量2.06 MeV氘核引起的~7Li(d,n)反应中子能谱,并得到各反应道的分支比。     

双闪烁体快中子飞行时间谱仪

一台由散射闪烁体和中子探测器及其屏蔽准直系统、α粒子探测器和相应的电子学仪器组成的双闪烁体快中子飞行时间谱仪已经建立,并在研究D(n,n)D和D(n,2n)P反应中获得了满意的结果,文章介绍了它的工作原理、结构、主要性能和应用。     

ST1422塑料闪烁体光输出能量响应函数的测定

利用T(p,n)和D(d,n)核反应作为单脉冲中子源,在0．6～5MeV中子能区内,测定了ST1422塑料闪烁体(直径40mm,厚度5mm)的光输出随中子能量变化关系。结果表明：ST1422塑料闪烁体的光输出随中子能量的增大而非线性增加。     

n,γ透射法水分、密度联合测定

研究了~θLi(Ce)玻璃闪烁体用作中子、γ辐射探测器时的n,γ幅度鉴别性能。实验初步验证了用~6Li(Ce)玻璃闪烁体单探头热中子透射法测含水(氢)量,γ透射法测密度的联合测量的原理。     

~(238)U瞬发裂变平均中子数在快中子能区随入射中子能量的变化

用直径60厘米的载镉液体闪烁中子探测器测量了~(238)U的瞬发裂变平均中子数?_p在1.21～5.50兆电子伏能区的变化。实验在2.5兆伏静电加速器上进行。用~7Li(p,n)、T(p,n)和D(d,n)反应获得中子,质子束流约20微安。测量是相对~(240)Pu自发裂变进行的。根据我们过去的测量结果,~(240)Pu自发裂变瞬发平均中子数?_(sp)(~(240)Pu)为2.138±0.034。     

低能D(d,n)~3He反应中~3He粒子的探测及自生靶稳定性的初步研究

一、引言测量D(d,n)~3He反应中的~3He粒子,对于测量D(d,n)~3He反应的中子产额及应用中子-~3He粒子符合技术很有意义。在D(d,n)~3He反应中,~3He的探测存在困难。原因在于~3He粒子能量低和大量散射氘核脉冲堆积的干扰。另外~3He粒子与竞争的D(d,p)T反应中的氘粒子能量相近。为克服这些困难,人们采用了各种方法:1.用电磁分析器分开~3He,氚,氘粒子。2.用低原子     

ST-451型有机液体闪烁体快中子绝对效率的测定

一、前言由于有机液体闪烁体对于γ射线和中子有极好的脉冲形状甄别性能和快的时间响应,而且对快中子具有较高的探测效率,在快中子飞行时间谱仪中常用作中子探测元件。我们以T(d,n)~4He反应作为中子源,利用伴随粒子型快中子飞行时间谱仪测量了ST-451型     

~(56)Fe(n,p)~(56)Mn反应截面的测量

在E_n=12.8—18.2兆电子伏能区,用活化法测量了~(56)Fe(n,p)~(56)Mn反应截面,在E_n=14.63±0.20兆电子伏处做了绝对测量,结果为108.0±2.9毫靶。中子通量用伴随粒子法测定。对T(d,n)~4He反应的中子角分布也作了测定。~(56)Mn的放射性用φ10×7.6厘米的Nal(Tl)闪烁谱仪测量,~(56)Mn特征γ射线的探测效率用4πβ-γ符合法测定的~(56)Mn标准源刻度。本文还对用伴随粒子法测量中子通量作了较详细的叙述。测量结果同国外数据作了比较,并做了简短讨论。     

塑料闪烁体平均光衰减系数的测量

本文提出一种测量闪烁体对本身发光透明度的新方法。此方法用分光光度计测量闪烁体的透射光谱和发光光谱,利用这些光谱数据计算出闪烁体对本身发光的透明度参数,我们称这个参数为闪烁体的“平均光衰减系数”,其倒数是平均光衰减长度”。本文计算了2m长NE110塑料闪烁体的平均光衰减系数是0.31×10~(-2)cm~(-1),NE102A是0.38×10~(-2)cm~(_1)。     

Calculation of Response Function of NE-213 Organic Liquid Scintillator for Gamma-Rays

A Monte Carlo code was newly developed to examine response functions of a 2 in. dia. by 2 in. long NE-213 liquid scintillator for γ-ray. This code included the electron transport and the electron-photon cascade calculation to handle the wall and end effect induced by high energy electrons. Results of the Monte Carlo calculation were compared with measured values for standard sources, reaction γ-ray and thermal neutron capture γ-ray, and fairly good agreement was obtained.

Response functions for monoenergetic γ-ray of energies 1~10 MeV were calculated at 1 MeV intervals. The calculations were made in parallel incident geometry without the peripheral material components surrounding the scintillator. The results are tabulated in this paper. A response matrix calculated from the above data was applied to the unfolding of NE-213 pulse height spectra using the FERDO code and fairly good results were obtained in absolute values.     

Absorption of electrons in xenon for energies up to 200 keV: aMonte Carlo simulation study

Gas proportional scintillation counters are room-temperature, general-purpose X-ray detectors, which are used in many applications due to their good energy resolution, which can be better than standard proportional counters by a factor of ~2. However, for energies higher than ~20 keV, the experimentally measured energy resolution is found to deviate from the usual 1/√E law. Under these circumstances, it is of great interest to understand the mechanisms involved in the detection of higher energy X-rays. Since the photoelectrons will then carry most of the absorbed energy, we study in this work the response of xenon detectors to electrons with energies up to ~200 keV, using a Monte Carlo simulation technique. Distributions of the number of primary (subionization) electrons produced per parent electrons with energy E _e are calculated, and results are presented for the Fano factor, the w-value and the intrinsic energy resolution as a function of E_e in the range 20-200 keV. The influence of an applied reduced electric field on the results is assessed, showing that for 200 keV electrons an increase in the field from 0.1 to 0.8 Td causes an increase as high as 35% in the intrinsic energy resolution     

Measurement of ~(232)Th(n,2n)~(231)Th reaction cross-sections at neutron energies of 14.1 MeV and 14.8 MeV using neutron activation method

In this study, the activation cross-sections were measured for ~(232)Th(n,2n)~(231)Th reactions at neutron energies of 14.1 and 14.8 MeV, which were produced by a neutron generator through a T(d,n)~4He reaction. Induced gamma-ray activities were measured using a low background gamma ray spectrometer equipped with a high resolution HPGe detector. In the cross-section calculations, corrections were made regarding the effects of gamma-ray attenuation, dead-time, fluctuation of the neutron flux, and low energy neutrons. The measured cross-sections were compared with the literature data, evaluation data(ENDF-B/VII.1, JENDL-4.0 and CENDL-3.1), and the results of the model calculation(TALYS1.6).     

Development of a Double Layered Scintillator for Separating and Detecting Low Energy Protons and Electrons

A scintillator system consisting of a thin (5,000 ? - 15,000 ?) CsI(Tl) layer evaporated onto a plastic scintillator (NE-102) has been developed for the purpose of distinguishing low energy protons from electrons and measuring the energy of each species. Evaporations in a high vacuum (10-8 Torr) produced layers of CsI(Tl) that scintillate with an efficiency comparable to optimally doped bulk material, If the CsI(Tl) layer thickness is 15,000 ?, it stops protons with energies below 170 keV and electrons with energies below 18 keV. Thus, protons with energies between about 25 and 250 keV can be distinguished from electrons with energies above 18 keV by examining the shape of the light pulse generated in the dual scintillator. Results obtained with protons and electron beams will be presented.     

Transient Ionization Effects in Silicon Induced by 48 MeV Electron Pulses

Transient radiation effects induced in silicon irradiated in the temperature range 90 to 300°K by 0.007 to 4.5 microsecond pulses of 48 MeV electrons were studied using the transient response of resistivity and Hall effect voltages as the measuring probes. Results are given for one ohm-cm phosphorus-doped n-type silicon and 10 to 100 ohm-cm n-type and p-type samples. In the case of one ohmcm silicon the results clearly show the actual buildup of excess electrons produced by ionization during the time the electron pulse is irradiating the sample. Moreover, the shape of the pulse during buildup is independent of temperature as long as the electron beam pulse is kept constant. Dependence of the number of injected excess carriers on the ionization intensity (total integrated electron flux in the pulse) was found to be linear up to excess carrier concentrations of ~ 1017 cm-3. The lifetime is found to increase linearly with injection implying that the recombination may be dominated by one defect energy level. In p-type silicon the transient Hall and conductivity voltages decay in ~ 20-50 jsec. Relatively long saturation times (~ 10 to 100 microseconds) are observed in the transient Hall and conductivity voltage following an electron burst. The saturation time decreases with dose accumulation in p-type and also decreases as the irradiation temperature of the sample (both n- and p-type) is decreased. Very similar effects also are observed in n-type silicon samples.     

The Response of CsI(Tl) to Energy Degraded Fission Fragments

The scintillation response of a CsI(Tl) crystal to energy degraded fission fragments derived from a 252Cf spontaneous fission source has been measured over the energy ranges 34-51 MeV (heavy fragment) and 42-74 MeV (light fragment). The response to ?-ray induced electrons and to ?-particles was also measured for comparison purposes. The results indicate that the scintillation response for these particles is a monotonically decreasing function of specific energy loss.     

辐射显色薄膜电子高剂量计的剂量学特性

文章报道了用PR-CN(PVB)辐射显色薄膜测量电子吸收剂量的某些重要的剂量学特性:在0.3-120kGy范围内,吸收剂量(D)与单位厚度光密度变化(ΔOD/mm)有良好的线性关系;电子能量的依赖性小,~(147)Pm和~(90)Sr ~(90)Y响应之比约为1:2.4;对中能以上的电子剂量响应在实验误差范围内、与电子平衡条件下~(60)Co γ辐射剂量响应相同;在实验用到的平均剂量率范围内(约0.1—5×10~4Gy/min),响应和剂量率无关。建立了用于电子束工业辐射加工的吸收剂量常规刻度方法。最后给出了测量静电加速器1.5MeV、电子迴旋加速器6.9MeV电子束在有机玻璃中深部剂量分布的实例。     

用金活化法测定加速器中子源中子注量及MCNP4C修正

在四川大学720所2.5MeV静电质子加速器上,由核反应7Li(p,n)7Be,T(p,n)3He产生中子,对中国工程物理研究院研制的新型中子探测器进行效率刻度实验中,需要知道探测器位置处的中子绝对注量,为此我们测量了0.165、0.352、0.576、1.400MeV四个能点的中子注量。测量方法采用的是金活化法,在实验测量中,由靶头材料、冷却水层和样品的包层材料等引起的多次散射效应及中子在样品中的自屏蔽效应等均对实验结果产生影响。这些因素在实验中不可避免,也难以通过实验方法扣除,因此用Monte Carlo程序MCNP4C对上述效应进行了修正计算。     

Calculations of ~(86)Y production via various nuclear reactions

This study obtains a suitable reaction to produce ~(86)Y. The ~(86)Y excitation functions via ~(86)Sr(p,n)~(86)Y,~(86)Sr(d,2n)~(86)Y, ~(85)Rb(~3He,2n)~(86)Y and ~(85)Rb(α,3n)~(86)Y reactions were calculated by TALYS-1.0 code and compared with the reported measurement. Requisite thickness of targets was obtained by SRIM code for each reaction. The ~(86)Y production yield was evaluated with attention to excitation function and stopping power. The ~(86)Sr(p,n)~(86)Y reaction was determined as most interesting one due to its highest production yield and advantages to get high radionuclide and radiochemical purity.     

Ti-T靶中~3He测量

一、引言轻元素在材料中的含量及分布情况,是应用物理、应用技术等领域感兴趣的问题。目前,国外正在用各种核技术对此进行测量和研究。通常使用的Ti-T靶,因T的β衰变(T_(1/2)为12.33a),靶内~3He的含量将随制成靶的时间不同而变化。本文试图通过对不同时间制备的Ti-T靶中~3He的测量,探索测量和分析~3He的某种途径。