掺钽对二氧化钛压敏电阻性能的影响

研究了钽对二氧化钛压敏电阻性能的影响。研究中发现掺入 0 .2 5mol %Ta2 O5的样品显示出最低的反转电压 (Eb= 6V/mm)、最高的非线性常数 (α =8.8)以及最高的相对介电常数 (εr=6 .2× 10 4 ) ,与样品电容和电阻的频谱特性相一致。样品的性能变化可用Ta5+ 对Ti4 + 的掺杂取代和该取代存在的饱和值来解释     

对氧化铟掺杂SnCoNb压敏电阻性能的研究

通过实验对三氧化二铟掺杂的SnO2·Co2O3·Nb2O5压敏电阻的性能进行了研究。所用样品是在1350℃下烧结1h而制成的。实验发现所有样品都具有很高的致密度(相对密度不小于97.6%),这主要是由于Co2O3影响陶瓷的烧结过程造成的。当In2O3掺杂量为0.05mol%时,压敏电阻具有最高的非线性系数(α=19.3)。随着In2O3掺杂量的从0.00mol%增加至0.10mol%,非线性电场强度从213V/mm增加至815V/mm,而平均晶粒尺寸从6.6μm减小至4.9μm,非线性电场的增加与平均晶粒尺寸的减小密切相关;样品的相对介电常数也从2307减小至153,这归因于平均晶粒尺寸与势垒厚度比的减小。     

(Nb、Ce、Si、Ca)掺杂对TiO2压敏电阻陶瓷电性能的影响

采用正交实验方法研究了掺杂Nb2O5、CeO2、SiO2、CaCO3等对TiO2压敏电阻陶瓷电性能的影响.利用XRD及SEM实验方法分析了样品的物相和微观形貌,发现有第二相产生.这种新的第二相的存在,对压敏电压有明显的影响.优选典型配方制得样品的主要电性能指标为V1mA=10～20V,V10mA=20～30V,α=3～5,电容C=50～90nF,损耗tgδ＜0.8.     

Y2O3掺杂量对ZnO-Bi2O3-Nb2O5压敏陶瓷电性能的影响

通过掺杂Y2O3和优化烧结工艺制备了ZnO-Bi2O3-Nb2O5压敏陶瓷。利用XRD、SEM和VSR研究了Y2O3掺杂量对其电性能的影响。结果表明,随着Y2O3掺杂量增加,陶瓷电阻率ρ减小,非线性系数α增大;Bi2O3气氛下烧结（1170℃、保温2．5h）的陶瓷,当x（Bi2O3）和x（Nb2O5）为3％、y（Y2O...     

热分解氧化反应对TiO2电容压敏电阻器性能的影响

研究了具有热分解氧化反应的ＣｕＯ、ＭｎＯ２等的一类氧化物对ＴｉＯ２压敏电阻器性能的影响,采用Ｃ－Ｖ分析、Ｉ－Ｖ测量和介电测量等实验手段,分析了它们的和用机理。     

Co2O3掺杂对SnO2-Ni2O3-Nb2O5系压敏材料性能的影响

研究并分析了Ni^2＋掺杂和Co^2＋掺杂对SnO2压敏电阻致密度和电学非线性性能的影响。研究了掺Co^3＋对Sno2-Ni2O3-Nb2O5压敏材料性能的影响。实验结果表明，Co2O3在高温下可转变为CoO。Co^2＋的掺入不仅能够增大Sno2-Ni2O3-Nb2O5材料的质量密度，而且在线性系数，在较大程度上提高了Sno2-Ni2O3-Nb2O5压敏材料的性能。     

Bi2O3掺杂对Nb2O5-TiO2电容-压敏双功能陶瓷的影响

研究了Bi2O3掺杂对Nb2O5-TiO2电容压敏双功能陶瓷材料的烧结温度,相对介电常数,非线性,压敏电压的影响.实验发现,烧结温度为1200℃,Bi2O3掺杂量为0.2%时,非线性系数α高达6.6148;Bi2O3掺杂量为1.0%时,相对介电常数εr高达1.3733×104.烧结温度在1450℃时,压敏电压最低,Eb=1.979 V·mm-1.     

Co2O3掺杂对SnO2 - MgO- Nb2 O5压敏材料性能的影响

研究了Ｃｏ２Ｏ３含量对ＳｎＯ２－ＭｇＯ－Ｎｂ２Ｏ５压敏材料的密度、非线性特性的影响。实验结果表明,Ｃｏ２Ｏ３不仅能够增大ＳｎＯ２－ＭｇＯ－Ｎｂ２Ｏ５材料的质量密度,而且能提高非线性系数,减小漏电流,在较大程度上提高了ＳｎＯ２－ＭｇＯ－Ｎｂ２Ｏ５压敏材料的性能。     

CuO掺杂对 SnO2压敏材料性能的影响

研究了掺杂 CuO对 SnO2· Ni2O3· Ta2O5压敏材料电学性能的影响.实验发现,随着 CuO的 掺杂量从 0.50mol%增加到 1.50mol%,材料的压敏电场强度从 132V/mm升高到 234V/mm,相对 介电常数从 4663减小到 2701.电场强度变化的原因是 CuO掺杂引起的晶粒尺寸变化,随掺杂量 增加晶粒尺寸从 18.8μ m减小到 13.3μ m.未固溶于 SnO2晶格而偏析在晶界上的 CuO阻碍了相 邻 SnO2晶粒的融合 ,这导致了晶粒尺寸的减小.为了解释 SnO2· Ni2O3· Ta2O5· CuO电学非线性 性质的起源,本研究对前人的晶界缺陷势垒模型进行了修正.对该压敏材料进行了等效电路分析, 实验测量与等效电路分析结果相符.     

Pr6O11掺杂对ZnO-Bi2O3系压敏材料性能影响的研究

采用稀土氧化物Pr6O11对ZnO—Bi2O3系压敏材料进行了改性研究，探讨了Pr6O11对该材料主要性能及微观结构的影响．结果表明，Pr6O11掺杂量较小时，能够显著提高ZnO压敏材料非线性系数，减小漏电流，并基本不影响压敏电压．当Pr6O11掺杂达到一定量时，在保持较高非线性系数，较小漏电流的同时，压敏电压与不含Pr6O11的ZnO压敏材料相比提高约60％；XRD、SEM等分析表明Pr6O11的引入改变了原有材料的微观结构组织，使该材料微观结构中ZnO晶粒尺寸减小，分布均匀、致密．     

模板法制备TiO2的研究进展

作为近些年来倍受关注的过渡族金属氧化物,TiO2被广泛应用于诸如光催化、染料敏化太阳能电池、气体传感器等多个领域。与合成TiO2的传统方法相比,模板法有着反应条件温和、产物形貌尺寸易控、操作简单等优点。将模板分为非生物模板与生物模板两大类,分别综述了以这两大类模板制备TiO2的最新进展,并且介绍了其在各个领域的应用,最后展望了模板法制备TiO2未来的发展方向,以期为今后模板法制备TiO2的工作提供参考与指导。     

TiN-Al2O3纳米复合材料的力学性能和导电性能

以纳米TiN和α-Al2O3粉体为原料,采用球磨混合法制备了纳米TiN-Al2O3复合粉体,通过热压烧结得到致密烧结体.研究了纳米TiN颗粒对Al2O3材料力学性能和导电性能的影响,实验结果表明:在Al2O3基体中加入15vol％TiN纳米颗粒时,Al2O3材料的弯曲强度和断裂韧性分别从370MPa和3.4MPa·m1/2提高到690MPa和5.1MPa·m1/2,随着TiN添加量的增加,复合材料的电阻率逐渐降低,在25vol％TiN时达到最低值(6.5×10-3Ω·cm).     

Properties of TiO2 prepared by acid treatment of BaTiO3

TiO₃ powders were prepared by acid treatment of BaTiO₃ and their properties were investigated. The BaTiO₃ powder was subjected to HNO₃ in concentrations ranging from 10⁻³ to 8 M at 90 °C for 0.5-6 h. Dissolution of BaTiO₃ and precipitation of TiO₂ occurred at acid concentrations of 2-5 M. BaTiO₃ dissolves completely to form a clear solution at reaction times of 0.5-1 h, but a rutile precipitate is formed after 2 h of acid treatment. By contrast, anatase is precipitated by adjusting the pH of the clear solution to 2-3 using NaOH or NH₄OH solution. The rutile crystals were small and rod-shaped, consisting of many small coherent domains connected by grain boundaries with small inclination angles and edge dislocations, giving them a high specific surface area (S_BET). With increasing HNO₃ concentration, the S_BET value increased from 100 to 170 m²/g while the crystallite size decreased from 25 to 11 nm. The anatase crystals obtained here were very small equi-axial particles with a smaller crystallite size than the rutile and S_BET values of about 270 m²/g (higher than the rutile samples). The photocatalytic activity of these TiO₂ was determined from the decomposition rate of Methylene Blue under ultraviolet irradiation. Higher decomposition rates were obtained with larger crystallite sizes resulting from heat treatment. The maximum decomposition rates were obtained in samples heated at 500-600 °C. The photocatalytic activity of the TiO₂ was found to depend more strongly on the sample crystallite size than on S_BET.     

Preparation of SiO2/TiO2 composite fibers by sol-gel reaction and electrospinning

Submicron scale composite fibers of SiO₂/TiO₂ with various compositions have been prepared by electrospinning a sol-gel precursor of tetraethyl orthosilicate(TEOS) and titanium(IV) isopropoxide(TiP), followed by calcination. Any gelator or binder has not been used in this direct preparation process for composite fibers, and the maximum amount of titania for suitable fiber formation was about 50 mol%. The sintered composite fibers were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), and Fourier transform infrared (FT-IR) spectroscopy. Our results show that the surface morphology and crystallization behavior of electrospun fibers are largely influenced by the calcination temperature and the content of TiO₂. XRD results also reveal that the anatase phase in composite fibers can be preserved even after high temperature processing at lower content (x = 0.1, 0.2) of titania.     

Synthesis of TiO2/Pt/TiO2 multilayer films via radio frequency magnetron sputtering and their enhanced photocatalytic activity

TiO₂/Pt/TiO₂ (TPT) multilayered films with different thicknesses of Pt layers from about 0.75 to 12 nm were prepared by radio frequency magnetron sputtering method. The as-prepared films were characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, UV-visible diffuse reflectance spectroscopy, and photoluminescence spectroscopy. The photocatalytic activity of the samples was evaluated by the photocatalytic decolorization of methyl blue aqueous solution under ultraviolet light irradiation. The photocatalytic activities of all TPT multilayer films were higher than that of the pure TiO₂ films. When Pt thickness was increased to 3 nm, the measured photocatalytic activity of the TPT film was highest, and exceeded that of the pure TiO₂ films by a factor of more than three times. Such enhancement was ascribed to the presence of Pt layer, which inhibits the recombination of the photogenerated charge and carriers, as well as modifies the crystallinity of the TiO₂ top layer.     

微结构对Bi_2Sr_2Co_2O_y化合物电性能的影响

通过溶胶-凝胶法制备单相Bi2Sr2Co2Oy化合物,通过添加PEG20000和超声分散对化合物粉体微结构进行调控,采用SPS烧结得到了致密的块体.探索了微结构对Bi2Sr2Co2Oy化合物电性能的影响规律.结果表明,添加PEG20000和超声分散可以明显降低Bi2Sr2Co2Oy化合物粉体的晶粒尺寸,使烧结块体的晶粒尺寸大幅度减小,从而显著提高材料的电性能.温度为873K时,添加PEG20000并超声处理所制备样品烧结块体获得了最高ZT值0.041.     

Electrical conduction mechanisms of metal nanoclusters embedded in an amorphous Al2O3 matrix

We present the synthesis and electrical characterization of amorphous nanocomposite layers made of metallic nanoclusters embedded in an alumina matrix (nc-Co:Al₂O₃). The nanostructured materials were fabricated using a pulsed laser deposition (PLD)-derived method based on a nano-cluster generator coupled with a conventional PLD system for host medium co-deposition. The films were subjected to a detailed structural study carried out using high-resolution transmission electron microscopy and atomic force microscopy. The clusters inserted in the alumina matrix are metallic, well crystallized and possess an fcc structure with an average diameter centered at ∼ 2 nm. Dielectric constant and electrical conduction mechanisms of nc-Co:Al₂O₃ layers integrated in metal-insulator-metal capacitive structures were studied for different doping levels and for a broad temperature range (303-473 K). It was concluded that the dielectric constant in the films depends on the doping levels while the major electrical conduction mechanisms are best described by the space charge limited currents formalism, in which the current density J on an applied voltage V follow a power-law dependence (J ∼ Vⁿ) at applied voltages higher than ∼ 2 V. Such composite may find immediate applications as dielectric layers with controlled discharging conduction paths in Radio Frequency-Micro-Electro-Mechanical Systems capacitive structures.     

Photoelectrochemical property of ZnFe2O4/TiO2 double-layered films

ZnFe₂O₄/TiO₂ double-layered films on indium-tin oxide (ITO) substrate were prepared by a dip-coating method, and the optical absorption and photocurrent of the as-prepared films were measured. In the double-layered films, the onset of fundamental absorption edge shifts to a longer wavelength, and even shifts to a longer wavelength than that of ZnFe₂O₄-only film as the ZnFe₂O₄ layer thickness increases. Application of the coupled photoanodes double-layered films composed of ZnFe₂O₄ and TiO₂ can obviously increase the photocurrent. It was found that the photocurrent density of ZnFe₂O₄/TiO₂ double-layered films first increased and then decreased with increasing the ZnFe₂O₄ layer thickness. A five-fold increase in the photocurrent density was obtained compared with TiO₂-only films under optimum condition.     

Y2O3掺杂对低压氧化锌压敏电阻材料结构和电学性能的影响

通过掺杂研究了微量Y2O3对低压氧化锌压敏电阻的电性能影响,并采用SEM测试手段对其微观组织结构进行了分析研究,从理论上探讨了Y2O3影响低压氧化锌压敏电阻电性能与组织的机理.研究结果表明,在0～0.07%(摩尔分数)掺杂范围内,随着Y2O3含量的增加,低压氧化锌压敏电阻的电场强度明显提高;当Y2O3含量超过0.07%时,电场强度又呈下降趋势.低压氧化锌压敏电阻掺杂Y2O3后,非线性指数α增大,漏电流IL减小,但当掺杂量在0.06%～0.09%(摩尔分数)的范围内,漏电流IL和非线性指数α的变化不大.其原因是Y2O3加入到氧化锌压敏电阻中,Y主要以固溶的形态分布于ZnO晶内和晶界处,使ZnO晶体的自由电子浓度增大,进而使填隙锌离子Zni的总浓度下降,引起填隙锌离子的传质能力下降,抑制了ZnO晶粒的生长,因而晶粒尺寸随Y2O3掺杂量的增加而减小.