Low-temperature spark plasma sintering of NiO nanoparticles

NiO nanoparticles of 20 nm in diameter were spark plasma sintered between 400 °C and 600 °C for 5 and 10 min durations. Application of 100 MPa pressure from room temperature resulted in densities between 75% and 92%. The final grain size was between 26 nm and 68 nm. Lower densities were recorded when 100 MPa was applied at the SPS temperature. Two shrinkage rate maxima of ∼3.4 × 10⁻³ s⁻¹ and ∼2 × 10⁻³ s⁻¹ were observed around 390 ± 10 °C and at the SPS temperature. The two shrinkage rate maxima were related to densification by particle sliding followed by diffusional grain boundary sliding during the heating. The strong effects of the surface and interfacial processes which are active during the SPS were highlighted.     

Field emission studies of Te nanorods grown on Si (111) substrate

Tellurium nanorods were grown on silicon (111) substrates by thermal evaporation. The synthesized Te nanorods were characterized by scanning electron microscope (SEM) and transmission electron microscope (TEM), prior to the field emission investigations. The TEM image revealed that the nanorods are needle-like having diameter less than 20 nm and length in the range of 200-400 nm. The selected area electron diffraction (SAED) pattern and high resolution TEM micrographs clearly reveal the crystalline nature of the Te nanorods. The field emission studies were carried out in a planar diode (close proximity) configuration at background pressure of ∼1 × 10⁻⁹ mbar. An emission current density of ∼8.5 μA/cm² has been drawn at an applied field of ∼3.2 V/μm. The Folwer-Nodhiem plot, showed a non-linear behaviour. The high value of field enhancement factor (β ∼ 1 × 10⁴), estimated from the slope of the F-N plot, suggests that the emission is indeed from the nanometric tips of the Te nanorods. The emission current stability studied at the preset value ∼3.5 μA over duration of more than 3 h is found to be very good, suggesting the use of Te nanorods as promising electron source for field emission based micro/nano-electronic devices.     

Microstructural and electrochemical properties of vertically aligned few layered graphene (FLG) nanoflakes and their application in methanol oxidation

Vertically aligned few layered graphene (FLG) nanoflakes were synthesised on silicon substrates by microwave plasma enhanced chemical vapour deposition (MPECVD) method. Transmission electron microscopy (TEM) shows that the structures have highly graphitized terminal planes of 1–3 layers of graphene. Raman spectroscopy revealed a narrow G band with a FWHM of ∼23 cm⁻¹ accompanied by a strong G′ (2D) band, with a FWHM of ∼43 cm⁻¹ and an I_G/I_G′ ratio of 1, which are all the characteristics of highly crystallized few layered graphene. The FLG electrodes demonstrate fast electron transfer (ET) kinetics for Fe(CN)₆^3−/4− redox system with an electron transfer rate, ΔE_p, of 60 mV. Platinum (Pt) nanoparticles of ∼6 nm diameter were deposited on as grown FLGs using magnetron DC sputtering for methanol oxidation studies. When used as electrodes for methanol oxidation, a mass specific peak current density of ∼62 mA mg⁻¹ cm⁻² of Pt is obtained with a high resistance to carbon monoxide (CO) poisoning as evident by a high value of 2.2 for the ratio of forward to backward anodic peak currents (I_f/I_b).     

Template-free non-aqueous electrochemical growth of CdO nanorods

The direct template-free synthesis and characterization of CdO nanorods (NRs) obtained through electrochemical reduction process of molecular oxygen (O₂) in a dimethylsulfoxide solution containing CdCl₂are reported. X-ray diffraction characterization of the NRs shows that the CdO phase was obtained without the presence of any other secondary phases. In agreement with the aspect ratio of a typical nanorod structure, CdO NRs presented average diameters of ca. 170 nm and average lengths of ca. 920 nm. Current results also demonstrate that the employed electrochemical synthesis route favors the growth of NRs with a preferred crystallographic orientation along the [200] axis direction. The synthesized CdO NRs exhibited a n-type semiconductor character with a donor carrier concentration of N_D = 4.3 × 10¹⁹ cm^− 3.     

Intense low threshold nonlinear absorption and nonlinear refraction in a new organic–polymer nanocomposite

Intense reverse saturable absorption is reported for the first time in solid films of a new organic–polymer nanocomposite, cast by doping Biebrich Scarlet dye in a vinyl polymer host polyvinyl alcohol for various concentrations, as studied employing the Z-scan technique at 442 nm under different peak incident intensities ranging from 9.37 × 10² to 104.18 × 10² W cm⁻². The sample also exhibited nonlinear refraction under the experimental conditions. The estimated values of the effective coefficients of nonlinear absorption β_eff(0.27 × 10⁻² to 45.5 × 10⁻² cm W⁻¹) as well as nonlinear refraction n₂ (−1.5 × 10⁻⁷ to −2.75 × 10⁻⁷ cm² W⁻¹) measured up to the highest reported ones for low power continuous wave excitation. The composite films were characterized as nanoclusters consisting of dye molecules encapsulated between larger molecules of the amorphous polymer and having a low average roughness (≈1 nm) for the surface. These results, together with the simple and flexible processing method for the dye–polymer composite, imply that BS–PVA composite films have promising optical properties as an efficient low threshold nanocomposite material for potential applications in nonlinear optical devices.     

Deep level transient spectroscopy on charge traps in high-k ZrO2

The deep trap properties of high-dielectric-constant (k) ZrO₂ thin films were examined by deep level transient spectroscopy (DLTS). The hole traps of a ZrO₂ dielectric deposited by sputtering were investigated in a MOS structure over the temperature range, 375 K-525 K. The potential depth, cross section and concentration of hole traps were estimated to be ∼ 2.5 eV, ∼ 1.8 × 10^− 16 cm² and ∼ 1.0 × 10¹⁶ cm^− 3, respectively. DLTS of ZrO₂ dielectrics can be used to examine the threshold voltage shift (?V_th) during the operation of SONOS-type flash memory devices, which employ high-k materials.     

Silica@Carbon mesoporous nanorattle structures synthesised by means of a selective etching strategy

A facile route for the fabrication of nanorattles composed of tunable silica spherical nanoparticles confined inside mesoporous carbon shells is presented. The synthetic strategy involves several steps: i) the synthesis of solid core/mesoporous shell silica microspheres, ii) the infiltration of the mesoporous shell with a carbon precursor and its conversion to carbon through a carbonization process and iii) the controlled dissolution of the silica by means of a soft etching agent (NaOH 1.5 M). Following this procedure, a variety of Silica@Carbon nanorattles of diameter ∼ 430 nm is produced. The diameter of the silica core can be uniformly tuned between 330 nm and 160 nm by varying the etching time in a range of 2 h-44 h. The rate constant for the dissolution process of the silica core was estimated to be k ≈ 1.2 × 10^− 10 g cm^− 2 s^− 1. These nanorattles have a high BET surface area and a large pore volume, depending on the amount of silica in the composite.     

A study on the interface and bulk charge density of AlN films with sputtering pressure

An attempt to correlate deposition-induced effects and the morphological properties with the electrical properties of the aluminum nitride (AlN) films have been made. The AlN film was sputter deposited on silicon while increasing the pressure in steps from 2×10⁻³ to 8×10⁻³ mbar. An X-ray diffractogram revealed that the intensity of (0 0 2) orientation increased till 6×10⁻³ mbar pressure, but it changed to (1 0 0) orientation of the AlN film at 8×10⁻³ mbar. The FTIR spectra of the absorption band of the films were observed around 682 cm⁻¹ and became prominent at 6×10⁻³ mbar. A decrease in the grain size was seen by SEM images at 8×10⁻³ mbar. The AFM measurements revealed that the surface roughness varied from 1.56 to 3.24 nm with pressure. It was found that the insulator charge density (Q_in) increased from 1.4×10¹¹ cm⁻² to 1.3×10¹² cm⁻² with increase in pressure. On the other hand, the interface state density (D_it) was found minimum (7.3×10¹¹ eV⁻¹ cm⁻²) at 6×10⁻³ mbar. It is found that presence of the Q_in and D_it are primarily governed by the sputtering pressure of the AlN film.     

Nonlinear optical properties of Ag nanocluster composite fabricated by 200 keV negative ion implantation

Metal nanocluster composite glass prepared by 200 keV Ag ions' implantation into silica with dose of 2 × 10¹⁷ ions/cm² has been studied. The formation of sandwiched nanocluster-nanovoid-nanocluster structures has been evidenced by in situ transmission electron microscopy experiment (TEM). Fast nonlinear optical refraction and nonlinear optical absorption coefficients were measured at 532 nm and 1064 nm of wavelength by the Z-scan technique. The third-order nonlinear susceptibility χ⁽³⁾ of this kind of sample was determined to be 4.0 × 10⁻⁸ esu at 532 nm and 9.0 × 10⁻⁸ esu at 1064 nm, respectively.     

Synthesis of high surface area mesoporous bioactive glass nanospheres

Mesoporous bioactive glass (MBG) nanospheres having the composition of SiO₂-CaO-P₂O₅ with both a large specific surface area (∼ 1040 m² g^− 1) and pore volume (1.54 cm³ g^− 1) were prepared using the ionic surfactant, cetyltrimethyl-ammonium bromide (CTAB), as a template. The size of the nanospheres depends on the amount of CaO that is incorporated and can be controlled over the range of diameters from 20 to 200 nm under dilute aqueous condition. In vitro bioactivity studies were carried out in simulated body fluid (SBF). Cytotoxicity tests of the MBG nanospheres were also performed by observing their influence on J774 macrophages at various concentrations.     

Some studies on highly transparent wide band gap indium molybdenum oxide thin films rf sputtered at room temperature

Transparent wide band gap indium molybdenum oxide (IMO) thin films were rf sputtered on glass substrates at room temperature. The films were studied as a function of sputtering power (ranging 40-180 W) and sputtering time (ranging 2.5-20 min). The film thickness was varied in the range 50-400 nm. The as-deposited films were characterized by their structural (XRD), morphological (AFM), electrical (Hall Effect measurements) and optical (visible-NIR spectroscopy) properties. XRD studies revealed that the films are amorphous for the sputtering power ≤ 100 W and the deposition time ≤ 5 min, and the rest are polycrystalline with a strong reflection from (222) plane showing a preferential orientation. A minimum bulk resistivity of 2.65 × 10^− 3 Ω cm and a maximum carrier concentration of 4.16 × 10²⁰ cm^− 3 are obtained for the crystalline films sputtered at 180 W (10 min). Whereas a maximum mobility (19.5  cm² V^− 1 s^− 1) and average visible transmittance (∼ 85%) are obtained for the amorphous films sputtered at 80 W and 100 W respectively for 10 min. A minimum transmittance (∼ 18%) was obtained for the crystalline films sputtered at 180 W (∼ 305 nm thick). The optical band gap was found varying between 3.75 and 3.90 eV for various sputtering parameters. The obtained results are analyzed and corroborated with the structure of the films.     

Synthesis of nanometal oxides and nanometals using hot-wire and thermal CVD

We report the synthesis of nano-oxides of molybdenum, tungsten, and zinc. Molybdenum oxide (MoO₃) and tungsten oxide (WO_x) were produced by hot-wire CVD with molybdenum and tungsten filaments, respectively while zinc oxide (ZnO) was produced by thermal CVD. When high purity molybdenum wire was oxidized at ambient system atmosphere, nanorods and nanostraws of MoO₃ with length ranging from ∼ 20-80 nm and diameters ranging from ∼ 5-15 nm were produced. Also, the oxidation of the tungsten filament led to the deposition of tungsten oxide nanorods (10-25 nm diameter and 75-90 nm long) and nanospheres with diameters of ∼ 60 nm. Each oxide was reduced to its metallic form by annealing in a hydrogen environment to produce metallic nanoparticles. Nanorods and nanoribbons of ZnO with diameters ranging from 20-65 nm and lengths up to 2 μm were also produced.     

Effect of environmental humidity on rate of thermal outgassing

This investigation presents a super-dry venting system that allows the rate of thermal outgassing of an aluminum chamber (length 2 m) to return rapidly to 1 × 10⁻¹³ mbar L s⁻¹ cm⁻² in 4 h without baking. A glove box and an air shower, which provided dehumidified environments with water vapor concentrations of 0.1 ppm and 5 ppm respectively, were utilized to assess the effect of environmental humidity on the rate of thermal outgassing. With super-dry nitrogen venting inside and exposure to the glove box, a thermal outgassing rate of q₁ ∼ 1 × 10⁻¹¹ mbar L s⁻¹ cm⁻² was achieved.     

Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide

Highly doped indium-tin oxide films exhibit resistivities ρ as low as  1.2 × 10^− 4 Ω cm, while for ZnO films resistivities in the range of 2 to 4 × 10^− 4 Ω cm are reported. This difference is unexpected, if ionized impurity scattering would be dominant for carrier concentrations above 10²⁰ cm^− 3. By comparing the dependences of the effective Hall mobility on the carrier concentration of ZnO and ITO it is found that grain barriers limit the carrier mobility in ZnO for carrier concentrations as high as 2 × 10²⁰ cm^− 3, independently, if the films were grown on amorphous or single crystalline substrates. Depending on the deposition method, grain barrier trap densities between 10¹² and 3 × 10¹³ cm^− 2 were estimated for ZnO layers. Also, crystallographic defects seem to reduce the mobility for highly doped ZnO films. On the other hand, for ITO films such an influence of the grain barriers was not observed down to carrier concentrations of about 10¹⁸ cm^− 3. Thus the grain barrier trap densities of ZnO and ITO are significantly different, which seems to be connected with the defect chemistry of the two oxides and especially with the piezoelectricity of zinc oxide.     

Structural, optical, and nonlinear optical absorption/refraction studies of the manganese nanoparticles prepared by laser ablation in ethanol

The structural, optical, and nonlinear optical properties of the manganese nanoparticles prepared by laser ablation in various liquids were investigated using the 532 and 1064 nm, 50 ps laser pulses. The TEM and spectral measurements showed temporal dynamics of size distribution of Mn nanoparticles in solutions. The nonlinear absorption (β = 2 × 10⁻¹⁰ and 4 × 10⁻¹¹ cm W⁻¹) and positive nonlinear refraction (γ = 8 × 10⁻¹⁵ and 2 × 10⁻¹⁴ cm² W⁻¹) of picosecond radiation were observed in the Mn colloidal suspensions using the 1064 and 532 nm radiation, respectively     

Electrochromic properties of nickel oxide based thin films sputter deposited in the presence of water vapor

Electrochromic nickel oxide based thin films were prepared by reactive RF magnetron sputtering from metallic nickel in the presence of Ar, O₂ and H₂O. The water vapor led to enhanced optical modulation and charge capacity. At a wavelength of 550 nm the bleached state transmittance was 0.73 and the transmittance for the colored state was 0.28 and 0.15 for water partial pressures of p_H2O < 10⁻³ Pa and p_H2O ~ 7 × 10⁻² Pa, respectively. The charge densities were 14 and 25 mC/cm² for p_H2O < 10⁻³ Pa and p_H2O ~ 7 × 10⁻² Pa, respectively. The coloration efficiency was decreased with increased water partial pressure, from about 0.07 to 0.06 cm²/mC. Preliminary results show that the H₂O promotes an amorphous structure and makes the films increasingly hydrous.     

Fabrication and laser behavior of the Yb:YAG ceramic microchips

Highly transparent 5 at.% Yb:YAG ceramic microchips were fabricated by vacuum sintering technology. The calculated cross section of the absorption σ_abs and emission σ_em were 6.1 × 10⁻²¹ cm² at 940 nm and 1.9 × 10⁻²⁰ cm² at 1030 nm, respectively. The fluorescence lifetime of the unannealed sample was 0.618 ms, and became 1.229 ms after annealing. Laser oscillation around 1037 nm was observed when pumped by the fiber-coupled laser with 970 nm. The threshold power was 3.0 W and the slope efficiency was about 12% when using the transmission of 2.6% output coupler.     

Properties of zirconia thin films prepared by reactive magnetron sputtering

The search for alternative dielectric materials with high dielectric constant, thermodynamic stable on silicon substrate and low direct tunneling current leads to oxide based materials like zirconia. Zirconia thin films were prepared by reactive magnetron sputtering. The capacitance voltage, ac and dc electrical characteristics were investigated and the values like fixed oxide charges were calculated and compared among the samples with and without annealing. Films annealed at 700 °C showed a dielectric constant ∼ 26 with interface trap densities of 1.629 × 10¹² eV^− 1 cm^− 2.     

Structural and optical properties of ultrananocrystalline diamond / InGaAs/GaAs quantum dot structures

The combination of the unique properties of ultrananocrystalline diamond (UNCD) films and of semiconductor quantum dot (QD) structures could significantly improve the performance of different electronic and optoelectronic devices, where e.g. good thermal management and advanced mechanical parameters are required. In the current work quantum dot InGaAs/GaAs heterostructures have been grown by molecular beam epitaxy (MBE) with different densities between 1.6 × 10¹⁰ cm^− 2 and 1.6 × 10¹¹ cm^− 2 controlled by the substrate temperature in the range between 490 and 515 °C. These structures were overgrown with UNCD by microwave plasma chemical vapor deposition (MWCVD) using methane/nitrogen mixtures at 570 °C. Scanning electron microscopy (SEM) reveals that without ultrasonic pretreatment the diamond nucleation density on QD structures is low and only separate islands of UNCD are deposited, while after pretreatment thin closed films are formed. From the cross-section SEM images a growth rate of ca. 3 nm/min is estimated which is very close to that on silicon at the same deposition conditions. The UNCD coatings exhibit a morphology consisting of two types of structures as shown by atomic force microscopy (AFM). The first one includes nodules with diameters between 180 and 350 nm varying with the density of the underlying QDs; the second is formed by a kind of granular substructure of these nodules with diameters of about 40 nm for all QD densities. The optical properties were investigated by photoluminescence (PL) spectroscopy before and after the deposition of UNCD. The PL signals of QD structures overgrown with UNCD, although with decreased intensity, remain almost unchanged with respect to the peak positions and widths, revealing that the UNCD/QD structures retain the optical properties of uncoated InGaAs/GaAs quantum dots.     

An investigation on palladium sulphide (PdS) thin films as a photovoltaic material

Polycrystalline PdS thin films with tetragonal structure have been grown by direct sulphuration of Pd layers. They are formed by crystallites of size ∼ 50 nm. As-grown PdS films show a Seebeck coefficient, S = − 250 ± 30 μV/K, which indicates an n-type conductivity. Electrical resistivity of the samples, measured by the four contact probe, is (6.0 ± 0.6) × 10^− 2 Ω·cm. Hall effect measurements, confirms n-type conductivity with a negative carrier density n = (8.0 ± 2.0) × 10¹⁸ cm^− 3 and electron mobility μ of (20 ± 2) cm²/V s. Band gap energy (E_g) and absorption coefficient (α) are determined from the optical transmission and reflectance of the films. A direct transition with energy gap E_g = (1.60 ± 0.01) eV is obtained. Optical absorption coefficient in the range of photon energies hν > 2.0 eV is higher than 10⁵ cm^− 1. All these properties make PdS thin films a good alternative material for solar applications.