Selective lifetime doping in silicon by laser scanning

Q-switched green laser-beam scanning has been investigated as a new approach for lifetime doping in silicon. The effects of the laser-beam scanning have been studied by p-n junction photoresponse, MOS CV lifetime measurements, and p-n junction leakage measurements. The results indicate there is a range of average laser power (0.5-0.8 mW under certain scanning conditions) over which minority-carrier lifetime decreases at least 3 orders of magnitude. The depth within which minority-carrier lifetime changes significantly is more than 0.4 µm. Also the doping may be accomplished without disturbing passivation and with no visible damage. Furthermore, the lifetime changes are shown to be stable for subsequent thermal processing up to 400°C.     

Pulse chirping in a Nd:YAG laser

The 1.06-μm output of a loss-modulation mode-locked and frequency-doubled Nd:YAG laser was examined using a microwave avalanche photodiode with a rise time of ∼40 ps, and a scanning Fabry-Perot. The pulses were found to be transform limited only in the case where the 0.53-μm output of the laser was suppressed. When conversion efficiency was restored, the spectrum exhibited narrowing, but the pulses were much wider than the transform limit, indicating the presence of chirping.     

Sensitivity measurement of a 10.6-µm parametric upconverter

The sensitivity of a parametric upconverter for the detection of 10.6-µm radiation was measured. 10.6-µm radiation was mixed with the 1.06 µm beam of an Nd :YAG laser in properly oriented single-crystal proustite. The upconverted output at 0.967 µm was then detected by an S-1 photomultiplier tube. NEP of 1.1×10^-9W . s^½was measured.     

Polysilicon resistor trimming by laser link making

A technique for laser trimming of polysilicon resistors has been developed. In this scheme an undoped polysilicon film is patterned lithographically, and then photoresist patterns are used to prevent doping of certain narrow areas of each resistor during the impurity implant; thus, the protected areas remain insulating after wafer processing. Subsequent laser scanning of the undoped regions can produce precise reductions in resistance by lateral diffusion of dopant impurities. Trimming can be accomplished by changing either the laser power or the position. Q-switched Nd:YAG (1.06-μm wavelength) and second-harmonic (0.53-μm wavelength) radiations have produced successful results. The process was applied to passivated resistors with negligible (perhaps zero) post-trim drift, and the temperature coefficients of resistivity (TCRs) of trimmed resistors can be matched to the TCRs of untrimmed resistors in the same film     

连续Nd∶YAG稳频倍频激光器

在连续稳频Nd:YAG激光器的基础上,重新设计了腔形,使用角度匹配的KTP和MgO:LiNbO_3晶体倍频。在输入功率为2.5kW时,获得基频光800mW输出,强度波动小于2％,频率稳定性优于2MHz。同时获得50～100mW的倍频光输出,强度波动小于5％,频率稳定性优于5MHz。     

2800～4100埃连续可调紫外激光器

报导了Nd:YAG脉冲激光器基波(1.06微米)与它的四次谐波泵浦的参量放大器输出(0.42～0.7微米连续可调)在KDP晶体中进行和频,产生0.3～0.41微米连续可调的紫外激光.以及Nd:YAG脉冲激光器的二次谐波(0.53微米)泵浦的若丹明6G染料激光在ADP晶体中倍频,产生0.28～0.3微米连续可调的紫外激光的实验结果.     

Vapor phase epitaxially grown InGaAs photodiodes

Vapor phase InxGa1-xAs photodiodes were fabricated for compositionsx = 0-0.57. p⁺-layers were made by Zn diffusion using ZnAs2as a Source. Dark currents at half the breakdown voltage forx= 0.15, 0.17, and 0.31 were as low as those fabricated by liquid phase epitaxy. The planar structure is superior to a mesa structure with respect to dark current. Dark currents for various compositions were compared with theoretical estimation. Current multiplications in planar diodes withx = 0.31were about 10 at the junction center and 200-300 at the periphery. Response time to 1.06-µm Nd: YAG mode locked laser pulses was measured to be about 250 ps.     

Nondestructive SEM measurement of minority-carrier transport parameters of CuxS/CdS solar cells as a function of heat treatment

Electron-beam-induced-current techniques of a scanning-electron microscope have been extended to allow nondestructive measurements to be performed on p-n heterojunction devices consisting of thin layers sensitively influenced by surface effects and under conditions where junction collection efficiency is less than perfect. When applied to CuxS/CdS solar cells formed on polycrystalline CdS with an epitaxial CuxS layer that was heat treated at 180°C in a hydrogen-argon ambient, the dominant change was found to be the greater than two increases in junction collection efficiencies to a maximum and then a decrease for treatment times up to 120 min. No significant variations were found in the minority-carrier diffusion lengths which remained in the 0.20- to 0.26-µm range for the CuxS and in the 0.41- to 0.46-µm range in the CdS. The Cuxsurface-recombination velocity retained a constant magnitude equal to its diffusion velocity. Optimization of the collection efficiency changes should lead to improved device performance.     

Thermal index changes by optical absorption in group III-V semiconductor waveguides

Large fast-relaxing intensity-dependent refractive index changes would make certain all-optical signal processing devices in waveguides feasible. In III-V compound materials, light-induced index changes can arise from any of several physical mechanisms which have different strengths and relaxation times. Index changes from 1.06-μm pulsed and CW Nd: YAG laser excitation were measured in single-mode low-loss InP and GaAs waveguide Fabry-Perot structures. The dominant effect was found to be due to heating of the waveguide volume which accompanies an extremely small amount of free-carrier absorption.     

Mo- and Ti-silicided low-resistance shallow junctions formed using the ion implantation through metal technique

Mo-and Ti-silicided junctions were formed using the ITM technique, which consists of ion implantation through metal (ITM) to induce metal-Si interface mixing and subsequent thermal annealing. Double ion implantation, using nondopant ions (Si or Ar) implantation for the metal-Si interface mixing and dopant ion (As or B) implantation for doping, has resulted in ultrashallow ( ≤ 0.1-µm) p⁺-n or n⁺-p junctions with ∼30-Ω sheet resistance for Mo-silicided junctions and ∼5.5-Ω sheet resistance for Ti-silicided junctions. The leakage current levels for the Mo-silicided n⁺-p junctions (0.1-µm junction depth) and the Mo-silicided p⁺-n junction (0.16-µm junction depth) are comparable to that for unsilicided n⁺-p junction with greater junction depth ( ∼0.25 µm).     

Boron ion implantation in silicon through selectively deposited tungsten films

The effect of implanting boron into silicon through thin selective tungsten films and annealing to form silicided p⁺-n junctions is investigated. A rate limited thickness of 0.011-µm tungsten is shown to have the equivalent stopping power of 0.08-µm oxide and be similarly ineffective in eliminating axial boron channeling. Nonetheless, junction diodes as shallow as 0.25µm with sheet resistances of 7 Ω, exhibiting nearly idealI-Vcharacteristics from -40 to 100°C, are fabricated. Analysis of the areal and perimeter leakage currents suggests that defects at the WSi2-SiO2interface are the contributing generation-recombination sites.     

Diode-pumped Nd:YAG laser producing 122-W CW power at 1.319 μm

A high-power diode-pumped Nd:YAG laser oscillating at a wavelength of 1.319 μm is reported. A 122-W CW laser beam with an M2 factor of 35 has been achieved with an optical efficiency of 19.6%. The lasing characteristics, including thermal lensing, at 1.319 μm are compared with those at 1.06 μm. Under lasing conditions, the focal length of thermal lensing at 1.319 μm decreases by 25% and increases by 15% at 1.06 μm with respect to the nonlasing conditions. Based on the experimental results, the heat dissipation in an Nd:YAG rod is discussed with reference to nonradiative transitions from the upper laser level     

High-speed NMOS circuits made with X-ray lithography and reactive sputter etching

The performance of fine line NMOS circuits fabricated with X-ray lithography and reactive sputter etching shows that NMOS can be competitive with other high-speed technologies. Enhancement and depletion mode silicon gate devices with 0.25 µm junction depth, 200 Å gate oxide and 0.7 µm channel length have been used in a 175 ps delay per stage ring oscillator with a 5V power-delay product of .24 pJ and a 600 MHz, 4 stage counter. Slight technology changes also produced a 92 ps delay ring oscillator with a 5V power delay product of 0.53 pJ.     

Laser simulation of ionizing-radiation effects on silicon ICs: The temperature and doping-level dependence of simulation parameters

Experimental results are reported concerning the variation of the linear absorption coefficient with doping level and temperature in silicon subjected to 1.06-μm laser irradiation. They should be useful for accurate evaluation of equivalent dose rates in laser simulations of ionizing-radiation effects on different types of IC. __________ Translated from Mikroelektronika, Vol. 34, No. 6, 2005, pp. 451–454. Original Russian Text Copyright ? 2005 by Gadoev, Skorobogatov.     

Internally folded Nd:YAG and Nd:YVO4 lasers pumped bylaser diodes

An efficient, scalable, diode-pumped Nd laser design is reported. The gain element can be longitudinally pumped along five separate axes and is relatively simple to fabricate. Both Nd:YAG and Nd:YVO₄ gain media were evaluated. Using five single-stripe laser diodes to pump the Nd:YAG, 3.94 W of absorbed power produced 2.1 W CW at 1.06 μm. The slope efficiency was 54 percent and the output was TEM₀₀. The threshold power was 40 mW. No evidence of thermal saturation was observed up to the maximum pump power. Repetitively Q-switched operation is also reported. The maximum output power for Nd:YVO₄ obtained with 2.9 W of pump power was 1.3 W. The slope efficiency was 47 percent     

Silicon-on-insulator bipolar transistors

Thin-film lateral n-p-n bipolar transistors (BJT) have been fabricated in moving melt zone recrystallized silicon on a 0.5-µm silicon dioxide substrate thermally grown on bulk silicon. Current-voltage characteristics of devices with different base widths (5 and 10 µm) have been analyzed. The use of a metal gate over oxide covering the base region has allowed the devices to be operated as n-channel MOSFET's as well thus surface effects on device characteristics have been investigated under varying gate-bias voltages. Maximum dc current gain values of 2.5 were achieved with a 5-µm base width and values around 0.5 with a 10-µm base width. Higher gain values were impeded by onset of high-level injection which occurred at low currents because of light base doping of these devices.     

FM-laser operation of the Nd:YAG laser

The FM-laser or frequency-sweeping mode of laser oscillation has been demonstrated in a Nd :YAG 1.06-μ laser with an intracavity LiNbO3phase modulator. The experimental results are in excellent agreement with the theoretical expressionDelta= (DeltaOmega/Deltanu) (delta/pi)where δ= peak single-pass phase retardation in the modulator,DeltaOmega= axial mode spacing,Deltanu=modulator detuning, and Δ=resulting FM index of the laser output. Modulation indices as large asDelta approx 230rad have been obtained, in which case the instantaneous laser frequency is sweeping over a full spectral range of2Delta cdot f_{m} approx 120GHz (≈ 4 cm^-1) at a repetition frequencyf_{m} approx 260MHz, with a time-bandwidth product per periodapprox 2Delta approx 460. The coherently mode-locked spectral bandwidth thus obtained in the FM-laser case is very much wider than can be achieved in the pulsed mode-locked case with the same Nd:YAG laser. Some possible ways of using this broad-band coherent FM spectrum are suggested.     

Laser formation of Pt-Si Schottky barriers on silicon

135 nsec pulses ofλ = 1.06μm light from a Nd: YAG laser have been used to form Schottky barriers by irradiation of a 500Å thick metal film on n-type silicon. Large area barriers were fabricated by over-lapping individual 30μ diameter laser pulses of from 4 to 12 J/cm². The barrier height was 0.73 ± 0.03 V, independent of the laser power. The barrier quality, as assessed by measurement of the forward current characteristic, decreased with laser power to a value of n = 1.5 at 12 J/cm².     

Configuration of the optical transmission line using stimulated Raman scattering for signal light amplification

Expansion of a repeater spacing of optical transmission line is investigated using forward stimulated Raman scattering generated by a 1.34-μm Nd:YAG laser to amplify the signal light. Achievable repeater spacing at the 1.42-μm wavelength transmission is numerically estimated on the basis of coupled power equations and experimentally obtained Raman gain for various core-cladding index difference. A transmission distance of more than 200 km is predicted for an input signal light power of 100 μw and a pump power of 200 mW using a fiber with a relative index difference of 1 percent.     

双调Q复合腔Nd∶YAG-Cr4+∶YAG激光器的研究

报道一种有实用价值的、构思新颖的双调Q ,双波长输出的Nd∶YAG Cr4+∶YAG激光器。在由两个平凹腔耦合而成的复合腔中 ,Cr4+∶YAG晶体既作为可饱和吸收体对Nd∶YAG发射的 1 0 6 μm激光被动调Q ,又作为增益介质在 1 0 6 μm激光脉冲作用下发射中心波长 1 4 4 μm的激光脉冲。该激光器实现了 1 0 6 μm激光被动调Q和 1 4 4 μm激光增益调Q的双波长激光振荡 ,输出的 1 0 6 μm和 1 4 4 μm激光脉冲的能量和脉冲宽度分别为 18mJ,5 2ns和0 2 5mJ,19ns ;后者的脉冲宽度约为前者的三分之一。理论上 ,根据Cr4+∶YAG的能级结构和复合腔特点 ,分析了双调Q的工作机理 ;从速率方程出发导出双调Q复合腔激光器输出的 1 4 4 μm激光脉冲宽度和腔内 1 0 6 μm激光功率的关系。 1 4 4 μm激光脉冲时间宽度的理论计算值 ( 2 1 7ns)与实验结果 ( 19ns)基本相符。