A universal dual band LNA implementation in SiGe technology forwireless applications

A dual band low-noise amplifier (LNA) with matched inputs and outputs, implemented in Infineon Technologies' B7HF SiGe process, is presented. Both the single-ended inputs and outputs are matched to 50 Ω without external elements. For the low-band (800 MHz-1 GHz), the LNA has a measured gain of 17 dB and a noise figure below 1.2 dB at 900 MHz. The high-band (1.8-2 GHz) LNA achieves a gain of 15 dB and a noise figure below 1.5 dB at 1.9 GHz. Both LNAs consume 5 mA dc current with a power supply voltage range from 2.7-3.6 V     

多模式卫星导航接收机中双频段LNA设计

设计出一款应用于多模式卫星导航接收机射频前端的双波段LNA,该电路可以工作在1.575GHz和1.267GHz两个波段附近,覆盖了当今各种卫星导航系统的载波频段.LNA的输入阻抗和输出阻抗均被匹配到50Ω,电路采用0.18μmCMOS工艺实现.测试结果表明该电路在1.575GHz和1.267GHz两个波段上噪声系数分别为0.88dB和0.78dB,功率增益分别为25.5dB和25.9dB,S11分别为-16dB和-12.5dB,1dB压缩点分别为-23.4dBm和-23.6dBm,1.8V供电电压条件下静态工作电流均为4.0mA.电路在上述两个频段上稳定性均满足要求.     

Extremely high gain 0.15 mu m gate-length InAlAs/InGaAs/InP HEMTs

High electron mobility transistors (HEMTs) based on the InAlAs/InGaAs heterojunction grown lattice matched to InP were fabricated with 0.15 mu m T-shaped gates. The use of an undoped InGaAs cap layer in the epitaxial structure leads to excellent gate characteristics and very high transistor gain. At 95 GHz, a maximum available gain of 13.6 dB was measured. A maximum frequency of oscillation f/sub max/ of 455 GHz was obtained by extrapolating from 95 GHz at -6 dB/octave. This is the best reported gain performance for any transistor.<>     

Thick Metal CMOS Technology on High Resistivity Substrate and Its Application to Monolithic L-Band CMOS LNAs

Thick metal 0.8 µm CMOS technology on high resistivity substrate (RF CMOS technology) is demonstrated for the L-band RF IC applications, and we successfully implemented it to the monolithic 900 MHz and 1.9 GHz CMOS LNAs for the first time. To enhance the performance of the RF circuits, MOSFET layout was optimized for high frequency operation and inductor quality was improved by modifying the technology. The fabricated 1.9 GHz LNA shows a gain of 15.2 dB and a NF of 2.8 dB at DC consumption current of 15 mA that is an excellent noise performance compared with the off-chip matched 1.9 GHz CMOS LNAs. The 900 MHz LNA shows a high gain of 19 dB and NF of 3.2 dB despite of the performance degradation due to the integration of a 26 nH inductor for input match. The proposed RF CMOS technology is a compatible process for analog CMOS ICs, and the monolithic LNAs employing the technology show a good and uniform RF performance in a five inch wafer.     

Design and analysis of a 70-ps SiGe differential RF switch

This paper presents the design and analysis of an SiGe high isolation single-pole double-throw (SPDT) differential absorptive switch at 24 GHz for pulsed ultra-wideband applications. Sub-100-ps envelope rise times are achieved through the use of differential current steering. The SPDT results in 1.9 dB of gain in the passband and an isolation of 35 dB while remaining matched at its ports (absorptive). The measured rise time of the RF envelope is 70 ps using a transistor with an f/sub T/ of 80 GHz and agrees with both the simulated and analytically determined values.     

Design of InP DHBT power amplifiers at millimeter-wave frequencies using interstage matched cascode technique

In this paper, the design of InP DHBT based millimeter-wave(mm-wave) power amplifiers(PAs) using an interstage matched cascode technique is presented. The output power of a traditional cascode is limited by the early saturation of the common-base(CB) device. The interstage matched cascode can be employed to improve the power handling ability through optimizing the input impedance of the CB device. The minimized power mismatch between the CB and the common-emitter(CE) devices results in an improved saturated output power. To demonstrate the technique for power amplifier designs at mm-wave frequencies, a single-branch cascode based PA using single-finger devices and a two-way combined based PA using three-finger devices are fabricated. The single-branch design shows a measured power gain of 9.2 dB and a saturated output power of 12.3 dBm at 67.2 GHz and the two-way combined design shows a power gain of 9.5 dB with a saturated output power of 18.6 dBm at 72.6 GHz.     

双频带低噪声放大器设计

基于Jazz 0.35 μm SiGe工艺,设计了一款能够在1.8 GHz和2.4 GHz不同频段带独立工作的低噪声放大器.放大器使用噪声性能优良的SiGe HBT,采用Cascode结构减少米勒效应的影响.输入电路采用由两次连续的频率变换和电路转换得到的双频滤波电路,输出端用射随器实现50Ω阻抗匹配.结果表明,该低噪...     

A 1.9-GHz silicon receiver with monolithic image filtering

A 1.9-GHz fully monolithic silicon superheterodyne receiver front-end is presented; it consists of a low noise amplifier (LNA), a tunable image reject filter, and a Gilbert cell mixer integrated in one die. The receiver was designed to operate with a 1.9-GHz RF and a 2.2-GHz local oscillator (LO) for a 300-MHz IF. Two chip versions were fabricated on two different fabrication runs using a 0.5-μm bipolar technology with 25 GHz transit frequency (f_T). Measured performance for the receiver front-end version 1, packaged and without input matching, was: conversion gain 33.5 dB, noise figure 4.9 dB, input IP3 -28 dBm, image rejection 53 dB (tuned to reject a 2.5-GHz image frequency), and 15.9 mA current consumption at +3 V. The image rejection was tunable from 2.4-2.63 GHz by means of an on-chip varactor. Version 2 had increased mixer degeneration for improved linearity. Its measured performance for the packaged receiver with its input matched to 50 Ω was: conversion gain 24 dB, noise figure 4.8 dB, input IP3 -19 dBm, and 65 dB image rejection for a 2.5-GHz image with an image tuning range from 2.34-2.55 GHz     

X波段LTCC铁氧体环形器的设计

针对微波铁氧体材料与低温金属浆料及LTCC陶瓷材料在工艺上的匹配共烧的技术难题,文中采用本征模设计方法,运用阻抗匹配技术,借助微波仿真HFSS和AutoCAD软件设计了一种X波段单Y结LTCC铁氧体环形器。器件模型在10.9~12 GHz的频率范围内出现环形功能,其带宽为1.1 GHz,插入损耗≤0.5 dB,回波损耗≥10 dB,隔离度≥13 dB,驻波比≤1.5 dB。此设计有望实现微波环形器与低温共烧陶瓷(LTCC)技术的有效结合。     

11 GHz and 12 GHz multiwatt internal matching for power GaAs f.e.t.s

Multiwatt internal-matching techniques for multichip power GaAs f.e.t.s at 11 GHz and 12 GHz bands have been developed, adopting a lumped-element input circuit and a semidistributed output circuit. The internally matched device for the 11 GHz band exhibits 4 W power output with 3.4 dB associated gain, and the 12 GHz device 3.6 W power output with 3 dB associated gain.     

Impedance-matched optical link for C-band satellite applications

Optical transmitter and receiver modules with passive impedance-matching circuits have been designed, constructed, and tested. A direct current modulated InGaAs DFB laser, operating at 1.3 micron, and an InGaAs PIN photodiode were matched to 50 ohms with passive, mixed lumped and distributed element, matching circuits. A link-insertion loss of 21 dB with a 3 dB bandwidth of 900 MHz has been demonstrated. Through the use of higher-order matching circuits, link-insertion loss variations across the satellite downlink frequency band (3.6-4.2 GHz) have been kept below ±0.5 dB     

A 52 GHz Phased-Array Receiver Front-End in 90 nm Digital CMOS

The commercial potential of the 60 GHz band, in combination with the scaling of CMOS, has resulted in a lot of plain digital CMOS circuits and systems for millimeter-wave application. This work presents a 90 nm digital CMOS two-path 52 GHz phased-array receiver, based on LO phase shifting. The system uses unmatched cascading of RF building blocks and features gain selection. A QVCO with a wide tuning range of 8 GHz is demonstrated. The receiver achieves 30 dB of maximum gain and 7.1 dB of minimum noise figure per path around 52 GHz, for a low area and power consumption of respectively 0.1 ${hbox{mm}}^{2}$ and 65 mW. The presented receiver targets 60 GHz communication where beamforming is required.      

一种用于WLAN/WiMAX的小型三频带印刷单极天线

设计了一种满足WLAN和WiMAX工作所需的小型共面波导馈电的三频带印刷单极子天线单元。该单极子天线的设计采用了在倒锥形单极天线表面开缝和在底层加载枝节的结构,使其获得了小型化和三频带的性能。采用基于共面波导的馈电方式,使天线单元具备宽带匹配、结构简单、制作方便和易与其它无线通信设备集成等优点。仿真和实测结果表明,设计的天线单元在WLAN和WiAMX应用的频段上10dB阻抗带宽分别约为610MHz(2.10～2.71GHz,约25.4%),310MHz(3.48～3.79GHz,约8.9%)和360MHz(4.96～5.32GHz,约7%),增益也都在2dB以上,而且在相应工作频点上辐射方向图全向性较好。该天线能满足WLAN和WiMAX的应用所需,具有较高的工程应用价值。     

A Novel 3–5 GHz Active Matched Filter for Impulse Radio Ultra-Wideband

In this letter, a novel active matched filter for UWB-IR lower band (3.1–4.85 GHz) is presented. The signal to noise ratio is improved at the output using a tapped delay line with a common source amplifier. An artificial transmission line is used for wideband impedance matching. The matched filter achieves a power gain of 9.8 dB at center frequency. Input matching is better than ${-}19$ dB and output matching is better than ${-}15$ dB. The averaged SNR improvement is 4.6 dB using peak detection. Input referred 1-dB compression point is 0.7 dBm at the center frequency. The matched filter is biased from a 1.5 V supply with a total power consumption of 38 mW.      

A 20 GHz Band 0.5 W GaAs FET Amplifier for Satellite Communications

GaAs FET amplifier modules for 20 GHz band satellite communications have been developed using newly developed power FETs. The deep recess gate structure was adopted in the power FET, which improved both power output capability and power gain. Power added efficiency of 22 percent with more than 1 W power output has been achieved with 3 mm gate width FETs. The amplifier modules containing two-stage internally matched FET's can be hermetically sealed in metal packages. The modules had 8.4-8.9 dB linear gain in the 17.7-18.8 GHz band and 7.9-8.4 dB linear gain in the 18.5-19.6 GHz band. The power output at 1 dB gain compression point was more than 0.5 W. The third-order intermodulation distortion ratio was 81-83 dB at 18.2 GHz and 77-80 dB at 18.9 GHz, when individual output signal power was -4 dBm.     

（英）D波段InP基高增益、低噪声放大芯片的设计与实现

利用90-nm InAlAs/InGaAs/InP HEMT工艺设计实现了两款D波段（110~170 GHz）单片微波集成电路放大器。两款放大器均采用共源结构,布线选取微带线。基于器件A设计的三级放大器A在片测试结果表明：最大小信号增益为11.2 dB@140 GHz,3 dB带宽为16 GHz,芯片面积2.6×1.2 mm2。基于器件B设计的两级放大器B在片测试结果表明：最大小信号增益为15.8 dB@139 GHz,3dB带宽12 GHz,在130~150 GHz频带范围内增益大于10 dB,芯片面积1.7×0.8 mm2,带内最小噪声为4.4 dB、相关增益15 dB@141 GHz,平均噪声系数约为5.2 dB。放大器B具有高的单级增益、相对高的增益面积比以及较好的噪声系数。该放大器芯片的设计实现对于构建D波段接收前端具有借鉴意义。     

深亚微米CMOS低噪声放大器的设计

通过一个符合性能指标的，用于射频接收系统的CMOS低噪声放大性能的设计，讨论了深亚微米MOSFET的噪声情况，并在满足增旋和功耗的前提下，对低噪声放大噪声性能进行分析和优化，该LNA工作在2.5GHz电源电压，直流功耗为25mW，能够提供19dB的增益（S21），而噪声系数仅为2.5dB，同时输入匹配良好，S11为-45dB，整个电路只采用了一个片外电感使电路保持谐振，此设计结果证明CMOS工艺在射频集成电路设计领域具有可观的潜力。     

一种双陷波超宽带马蹄形天线的设计

提出了一种新型的带有3.4 GHz和5.5 GHz双陷波特性的超宽带天线。天线由马蹄形的辐射贴片和共面波导馈电的传输线组成。回波损耗＜-10 dB的阻抗带宽是3.1~10.6 GHz,除了其中3.3~3.7 GHz 的WiMAX和5.15~5.825 GHz 的WLAN两个陷波频段。这些陷波的频段可以通过在天线的辐射贴片上增加长条裂缝和U型缝隙来保证。加工和测试的结果表明,天线有着良好的阻抗带宽和全向辐射方向图。     

Design and Analysis of Broadband Dual-Gate Balanced Low-Noise Amplifiers

In this paper, we present three MMIC low-noise amplifiers using dual-gate GaAs HEMT devices in a balanced amplifier configuration. The designs target three different frequency bands including 4-9 GHz, 9-20 GHz, and 20-40 GHz. These dual-gate balanced designs demonstrate the excellent qualities of balanced amplifiers in terms of stability and matched characteristics, while demonstrating higher bandwidth than designs with a single-stage common-source device. Additionally, noise performance is excellent, with the 4-9 GHz LNA demonstrating <1.75 dB noise figure (NF), the 9-20 GHz LNA <2.75 dB NF and the 20-40 GHz LNA <2.5 dB NF. Demonstrating high gain and excellent bandwidth, the dual-gate devices seem a logical choice for the balanced amplifier topology.     

An Integrated-Circuit Balanced Mixer, Image and Sum Enhanced

GaAs Schotty-barrier diodes with a zero-bias cutoff frequency of 800 GHz have been used in an integrated-circuit balanced diode mixer operating with a signal frequency centered at 9.3 GHz and a local-oscillator (LO) frequency at 7.8 GHz. For an instantaneous bandwidth of 1.0 GHz, the conversion loss (including all circuits and connector losses) was under 3.15 dB. Over the center 0.5 GHz of the band, the conversion loss was less than or equal to 2.8 dB. The conversion loss at the image-band edges was greater than 25 dB; the loss at the center of the image band was greater than 35 dB.