一个适用于无线内窥镜系统的ASK中频接收机电路

实现了一个适用于无线内窥镜系统的低功耗ASK中频接收机电路.该接收机包括一个用于补偿信道衰减的自动增益控制环、一个ASK解调器和基于能隙基准源的偏置电路,接收机电路已采用0.25μm CMOS工艺实现.测试结果表明,该电路可以从功率在-30～10dBm之间的中频信号中正确解调出数字基带信号,中频工作频率为20MHz.电路采用2.5V电源,消耗的电流仅为2.1mA.     

一个新型的带自动增益控制环路的低功耗ASK接收机

实现了一个适用于短距离无线系统的低功耗ASK中频接收机电路.该接收机包括一个用于补偿信道衰减的自动增益控制环和一个ASK检波器.自动增益控制环中采用了新型的限流跨导器和带前馈的差分峰值检测器,从而以较低的功耗实现了较高的压缩比及较快的响应速度.通过在峰值存储单元中引入零点及在峰值检测电路中引入前馈,实现了对自动增益控制环阻尼特性的调整.ASK检波器中传统的整流器和低通滤波器被整合为更紧凑的结构,从而进一步降低了功耗.仿真结果验证了本文所提技术的有效性.     

一个新型的带自动增益控制环路的低功耗ASK接收机

实现了一个适用于短距离无线系统的低功耗ASK中频接收机电路.该接收机包括一个用于补偿信道衰减的自动增益控制环和一个ASK检波器.自动增益控制环中采用了新型的限流跨导器和带前馈的差分峰值检测器,从而以较低的功耗实现了较高的压缩比及较快的响应速度.通过在峰值存储单元中引入零点及在峰值检测电路中引入前馈,实现了对自动增益控制环阻尼特性的调整.ASK检波器中传统的整流器和低通滤波器被整合为更紧凑的结构,从而进一步降低了功耗.仿真结果验证了本文所提技术的有效性.     

基亏LMH6505的中频信号调理电路设计

信号调理电路是一种在中频接收机中得到广泛应用的电路.针对中频数字接收机中对输入模拟信号的要求,设计一种适应性良好的信号调理电路.介绍自动增益控制(AGC)的原理,并给出基于可变增益放大器LMH6505的具体电路设计.该电路具有低功耗、增益可调范围宽和频率范围宽的特点,适用于一般的中频接收机.     

基于LMH6505的中频信号调理电路设计

信号调理电路是一种在中频接收机中得到广泛应用的电路。针对中频数字接收机中对输入模拟信号的要求,设计一种适应性良好的信号调理电路介绍自动增益控制（AGC）的原理,并给出基于可变增益放大器LMH6505的具体电路设计.该电路具有低功耗、增益可调范围宽和频率范围宽的特点,适用于一般的中频接收机。     

基于AD8367的压控增益放大系统设计

通信接收机的任务是从众多的电波中选出有用信号,并放大到解调器所要求的电平值后再由解调器解调,将频带信号变为基带信号。由于传输路径上的损耗和多径效应,接收机接收到的信号是微弱且又变化的,为保证信号还原或处理结果的可靠性,在接收机中频电路中通常都设计有自动增益控制（AGC）功能,使射频信号在接收机的中频输出稳定在一个固定的电平上。     

2.4GHz 0.35μm CMOS Gilbert下变频器

利用0 35μm CMOS工艺实现了一种用于低中频接收机的Gilbert型下变频器.其中,混频器的输出级采用折叠级联输出,射频信号、本振信号和中频信号的频率分别为2 452GHz,2 45GHz和2MHz.测试表明:在3 3V电源电压条件下,整个混频器电路消耗的电流约为4mA,转换增益超过6dB,输入1dB压缩点约为-11dBm.     

一种MLS接收机中频电路的设计与实现

介绍了 MLS 接收机中频电路的基本原理,结合工程应用实际,采用模拟集成电路的方法对中频电路进行了设计实现。与以往使用分立器件的设计相比,该方法的优点是集成度高、 功耗低,而且提高了电路的可靠性。该设计已在实际工程 MLS 接收机中得到良好的应用。     

一种2.4GHz 0.35μm CMOS Gilbert下变频器

利用0.35μm CMOS工艺实现了一种用于低中频接收机的Gilbert型下变频器.其中,混频器的输出级采用折叠级联输出,射频信号、本振信号和中频信号的频率分别为2.452GHz,2.45GHz和2MHz.测试表明:在3.3V电源电压条件下,整个混频器电路消耗的电流约为4mA,转换增益超过6dB,输入1dB压缩点约为-11dBm.     

扩频系统多通道相位差测量技术

论述了扩频无线电信号侦收和测向等应用领域中,在多通道天线和接收机后端采用数字处理手段,在低信噪比下实现多通道相位差精确提取的方法.阐述了多通道相位差提取的基本工程模型、中频信号采样处理方法、普通ASK调制信号的相位差提取方法,以及BPSK调制的扩频信号的相位差提取方法,给出了基于MATLAB7.0.1平台的仿真图形和结果.该技术已在工程中成功实现.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks