若干晶体中氧八面体结晶方位与晶体形貌

本文从结晶化学角度出发，研究了ＡＢ和Ａ２Ｂ３和ＡＢＯ３型氧化物晶体中的氧配位八面体的结晶方位与晶体结晶形貌之间的关系，提出晶体的结晶形貌是受晶体中负离子配位多面体结构和结晶方位所制约的。配位多面体顶角所对向的晶面生长速率最快，而面所对向的晶面生长速率最慢，配位体的棱所对向的晶面，生长速率居于两者之间，负离子配位多面体在晶体中的各个面族上连接和稳定性，决定了晶面的显露程度和晶体的结晶形貌。     

钨酸盐晶体中负离子配位多面体的结晶方位与晶体的形貌

钨酸盐类晶体是重要的闪烁晶体．本文从钨酸盐类晶体中负离子配位多面体的结晶方位和相互联结的稳定性出发，探讨了钨酸盐类晶体中[WO4]2-等负离子配位多面体的结晶方位与晶体结晶形貌之间的关系；认为[WO4]2-四面体与金属阳离子（Ca2＋，Pb2＋，Zn2＋）结合时，由于晶体结构和生长条件（如籽晶取向等）的不同，在晶体各族晶面上的叠合速率和结构取向不同，晶体的结晶形貌迥然有别；四面体的面和梭的法线（L2）所对向的晶面，生长速率慢，顽强显露，均属晶体的板面；四面体的顶角所指向的晶面，生长速率快，显露面积小，经常消失．由此可以合理解释钨酸铅等闪烁晶体的生长特征．最后对ABO4型晶体的结构及习性特征进行了总结归纳．     

硫酸盐类晶体中[SO4]2-四面体的结晶方位与晶体的形貌

本文从硫酸盐类晶体中负离子配位多面体的结和相互联结的稳定性出发，探讨了硫酸在晶体中「ＳＯ４」＾２－结晶方位与晶体结晶形貌之间的关系；认为「ＳＯ４」＾２－四面体与金属阳离子结合时，由于晶体结构和生长条件（如温度、过饱和度等）的不同，在晶体各族晶面上的叠合速率和取向不同，晶体的结晶形貌迥然有别。晶体的结晶形貌与「ＳＯ４」＾２－四面体在晶体中的结晶方位一密切相关，四面体的面和棱的法线（Ｌ＾２）所对向的对     

CMTD晶体(001)面的表面形貌观测及其结晶形态研究

用倒置相差显微镜观察了CdHg(SCN)4(H6C2OS)2(CMTD)晶体结晶过程的形态变化。同时用原子力显微镜(AFM)对CMTD的(001)面进行形貌观察，测得的初级台阶高度为1．411nm，是晶胞参数c的一半，发现了螺旋生长丘及缺陷．并对生长丘的中心孔芯作了初步分析，讨论了CMTD晶体所特有的“树杈状”和“一字形”缺陷及形成机理。     

若干晶体结晶习性的形成机理

本文根据在热液条件下生长水晶和钛酸钠晶体的电泳实验，提出热液条件下，上述晶体的生长基元具有负离子配位多面体的结构形式。由于溶液过饱和度在变化，这些生长基元的维度也随之变化。不同维度的生长基元往晶体各族晶面上叠合速率的比例也发生相应改变。它直接反映在晶体结晶形貌上。本文根据不同维度生长基元在各族晶面上的叠合速率解释了水晶和钛酸钠的结晶习性形成机理。     

硫酸盐类晶体中[SO_4]~(2-)四面体的结晶方位与晶体的形貌

本文从硫酸盐类晶体中负离子配位多面体的结晶方位和相互联结的稳定性出发，探讨了硫酸盐类晶体中[SO4]2-结晶方位与晶体结晶形貌之间的关系;认为[SO4]2-四面体与金属阳离子（Ba2 、Ca2 、Mg2 …）结合时，由于晶体结构和生长条件（如温度、过饱和度等）的不同，在晶体各族晶面上的叠合速率和取向不同;晶体的结晶形貌迥然有别.晶体的结晶形貌与[SO4]2-四面体在晶体中的结晶方位密切相关，四面体的面和棱的法线（L2）所对向的晶面，生长速率慢，顽强显露，均属晶体的板面;四面体的顶角所指向的晶面，生长速率快，显露面积小，经常消失.     

羟基磷灰石的形态结晶控制

对化学沉淀法制备羟基磷灰石中的制备温度、pH值、分散剂浓度、反应物浓度以及搅拌速度等因素对羟基磷灰石生长形态和结晶的影响进行了系列研究。结果表明：上述因素分别对HA的生长形态和结晶状况有不同程度的影响．通过对工艺参数的合理选择可以得到具有不同结晶状况和形态的羟基磷灰石颗粒。     

超高分子量聚乙烯的结晶形态

应用光学和电子显微镜等手段研究了四种超高分子量聚乙烯初生态聚合体和熔化结晶试样各自生成的结晶形态结构。结果表明,在初生态聚合体中生成纤维状晶体,而熔化结晶试样中只能生成由折迭链片晶组成的球晶结构,熔体拉伸取向结晶时则生成类似草席晶的结构。     

硼磷酸盐络阴离子的拓扑结构及分类研究

从拓扑的角度出发,分析研究了硼磷酸盐络阴离子的结构特征,对目前所有的硼磷酸盐进行了统计分类,并简化键合模型给出了硼磷酸盐结构预测式,丰富了硼磷酸盐结构化学,为解析硼磷酸盐的晶体和拓扑结构提供帮助,同时也有助于设计和合成新的硼磷酸盐材料.     

磷酸盐玻璃／聚丙烯复合材料的结晶行为和力学性能

制备了两种不同玻璃化温度的磷酸盐玻璃（P—glass）,研究了P—glass对聚丙烯（PP）基体结晶行为和力学性能的影响。结果表明,P—glass在PP中具有异相成核作用,使PP的结晶温度升高。具有较低玻璃化温度（176℃）的P—glass,能诱导生成口晶,使p-glass／PP复合材料的断裂伸长率与纯PP相比从427...     

晶体取向对镍基单晶高温合金枝状组织的影响

本文研究了一种镍基单晶高温合金不同晶体取向形成的枝晶组织的变化规律，发现枝晶择优生长方向偏离热流方向时，一次枝晶形态发生明显的变化，二次枝晶分枝出现明显的不对称性。     

Manipulating Crystallographic Orientation via Cross-Linkable Ligand for Efficient and Stable Perovskite Solar Cells

The crystallographic orientation of polycrystalline perovskites is found to be strongly correlated with their intrinsic properties; therefore, it can be used to effectively enhance the performance of perovskite-based devices. Here, a facile way of manipulating the facet orientation of polycrystalline perovskite films in a controllable manner is reported. By incorporating a cross-linkable organic ligand into the perovskite precursor solution, the crystal orientation disorder can be reduced in the resultant perovskite films to exhibit the prominent (001) orientation with a preferred stacking mode. Moreover, the as-formed low-dimensional perovskites (LDPs) between the organic ligand and the excess lead iodide can passivate the defects around the grain boundaries. Consequently, highly efficient p-i-n structured perovskite solar cells (PSCs) can be made in both rigid and flexible forms from modified perovskites to show high power conversion efficiencies (PCE) of 24.12% and 23.23%, respectively. The devices also exhibit superior long-term stability in a humid environment (with T₉₀ > 1000 h) and under thermal stress (retaining 87% of its initial PCE after 1000 h). More importantly, the ligand enables the derived LDPs to be crosslinked (under 254 nm UV illumination) to demonstrate excellent mechanical bending durability in flexible devices.     

CVD金刚石的晶体形态及界面位向关系

综述了CVD金刚石的晶体形态及界面位向关系.用SEM观察CVD金刚石晶粒形态主要有立方体、长方体、八面体、立方八面体、孪晶八面体、十面体和二十面体颗粒以及球形金刚石,讨论了晶粒的形成条件.用TEM观察则主要有单晶体、孪晶八面体和五重孪晶体形态.界面位向关系主要有:Si(001)//Diamond(001),Si<110>//Diamond<110(50078018);Si(111)//Diamond(111),Si<110>//Diamond<110>和Si(110)//Diamond(110),Si[110]//Diamond[111].     

Crystallographic Orientation Dependent Reactive Ion Etching in Single Crystal Diamond

Sculpturing desired shapes in single crystal diamond is ever more crucial in the realization of complex devices for nanophotonics, quantum computing, and quantum optics. The crystallographic orientation dependent wet etch of single crystalline silicon in potassium hydroxide (KOH) allows a range of shapes to be formed and has significant impacts on microelectromechanical systems (MEMS), atomic force microscopy (AFM), and microfluidics. Here, a crystal direction dependent dry etching principle in an inductively coupled plasma reactive ion etcher is presented, which selectively reveals desired crystal planes in monocrystalline diamond by controlling the etching conditions. Using this principle, monolithic diamond nanopillars for magnetometry using nitrogen vacancy centers are fabricated. In these nanopillars, a half‐tapering angle up to 21° is achieved, the highest angle reported in the literature, which leads to a high photon efficiency and high mechanical strength of the nanopillar. These results represent the first demonstration of a crystallographic orientation dependent reactive ion etching principle, which opens a new window for shaping specific nanostructures which is at the heart of nanotechnology. It is believed that this principle will prove to be valuable for the structuring and patterning of other single crystal materials as well.     

Crystallographic orientation and temperature effects on the fatigue crack growth rate and resulting fracture surface morphology in PWA1484 single crystal superalloy

This research looked at the effect of crystallographic orientation and temperature on the fatigue crack growth rate and the resulting fracture surface morphology in PWA1484 single crystal superalloy. Two groups of single edge notch tension specimens, one group with controlled secondary orientations and one group with uncontrolled secondary orientation, were tested at temperatures from 649°C to 982°C at R‐ratios of 0.1 and 0.7. It was found that the effect of temperature on the crack growth rate becomes more pronounced as the crack driving force increases while the secondary orientation and R‐ratio effects on the crack growth rate increase with increasing temperature. Two types of crack surface morphology were seen during fractography. The first was a precipitate avoidance (γ′ avoidance) morphology that was rolling but still predominantly flat when observed on a larger scale. In <001> primary oriented specimens, this fracture mode tended to follow the precipitate/matrix faces (microscopically cubic) while macroscopically staying essentially normal to the applied loads. The second mode was a form of cleavage (γ′ shearing) and occurred predominantly on octahedral crystallographic planes.     

Effect of Solvent Concentration and Cooling Modes on Morphology,Particle Size Distribution,and Yield of Dihydroxystearic Acid (DHSA) Crystals

Palm-based dihydroxystearic acid was purified by employing solvent crystallization using ethanol and ethanol/water mixture as solvents. Two different cooling modes, rapid and natural cooling, were employed for the crystallization process. In this study, the cooling effects on morphology, habit, particle size distribution, and yield of dihydroxystearic acid crystals were investigated. The dihydroxystearic acid crystals appeared to agglomerate into sphere-like and plate-like structures, depending on the cooling modes and the presence of water. By manipulating the solvent and cooling modes, the crystal yield ranged from 0.8% to 42.1%, while the crystal purity ranged from 73.3% to 91.4%. Solvent crystallization using ethanol was best achieved through natural cooling with the dihydroxystearic acid to ethanol ratio of 1.0:1.0, which produced the narrowest particle size distribution curve with the largest average particle size.     

KDP晶体生长习性与快速生长研究

发现由五氧化二磷合成的KDP晶体生长原料中含有大量还原性亚磷酸盐杂质．实验表明,亚磷酸盐对晶体锥面生长有显著的抑制作用．低浓度时造成柱面扩展,在高浓度时则使整个晶体的生长速度变慢．这种原料以适当方法提纯后,用“点籽晶”技术进行快速生长实验,平均生长速度达到13．7mm／天．     

一种测定晶体取向及其分布的简便XRD方法

提出了旋转定向测试法，其原理是使试样的在粉末X射线衍射仪上进行θ扫描的同时绕其端面法线自转，增加了晶面法线通过衍射平面的机会。通过这种方法可直观地区分取向多晶，准单晶或者单晶体，评定研制过程中准单晶和择优取向材料的晶体品质，确定单晶，准单晶及择优取向等材料的晶面相对宏观端面的晶向偏离角和取向分散度，还可对单晶体材料进行三维晶面定向。旋转定向法测试晶体取向具有快速简便，一机多用，精度高等优点，在电子、光学、磁性，机械等材料研究领域具在广泛的应用。