Piezoelectric, ferroelectric and dielectric properties of La2O3-doped (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

La₂O₃ (0–0.8 wt.%)-doped (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ (abbreviated as BNBT6) lead-free piezoelectric ceramics were synthesized by conventional solid-state reaction. The influences of La₂O₃ on the microstructure, the dielectric, ferroelectric and piezoelectric properties of the composites were investigated. X-ray diffraction (XRD) patterns indicate that 0.2-0.8 wt.% of La₂O₃ has diffused into the lattice of BNBT6 ceramics. Consequently, a pure perovskite phase is formed. SEM images show that the microstructure of the ceramics is changed with the addition of a small amount of La₂O₃. The temperature dependence of the relative dielectric constant shows that Curie point decreases with the increase of La₂O₃. At room temperature, the ceramics doped with 0.6 wt.% La₂O₃ show superior performance with high piezoelectric constant (d₃₃ = 167 pC/N), high planar electromechanical coupling factor (k_p = 0.30), high mechanical quality factor (Q_m = 118), high relative dielectric constant (ε_r = 1470) and lower dissipation factor (tanδ = 0.056) at a frequency of 10 kHz.     

Sr and Ba substitution in charge ordered Pr0.5Ca0.5MnO3: Sharp steps in the magnetic and transport properties for a narrow composition range

The magnetic and transport properties of Pr_0.5Ca_0.5−xA_xMnO₃ (A = Sr, Ba) have been investigated in this paper. The substitution of Ca with bigger cations such as Sr and Ba can favour the field-induced ferromagnetism and induce sharp steps in the magnetization versus field and resistivity versus field curves. These properties strongly depend on the thermal history of the samples. All the results have been interpreted by a martensitic-like mechanism based on phase separation induced by A-site size mismatch. The above model can also explain the result that the less efficient ability of Sr substitution than Ba substitution to induce ferromagnetism and sharp steps. Another interesting feature in the system is the existence of an optimum substitution range to induce magnetization steps and reach high field-induced magnetization values for both Sr (x = 0.07–0.10) and Ba (x = 0.01–0.08) substitution. We suggest that the disappearance of the steps beyond the optimum substitution range possibly results from the different nature of phase separation in the optimum substitution range and beyond this range.     

Extraordinary role of Ce–Ni elements on the electrical and magnetic properties of Sr–Ba M-type hexaferrites

The structural, electrical and magnetic behavior of Sr_0.5Ba_0.5−xCe_xFe_12−yNi_yO₁₉ (where x = 0.00–0.10; y = 0.00–1.00) hexaferrite nanomaterials are reported in this paper. The structural analysis indicates that the Ce–Ni doped Sr–Ba M-type hexaferrite samples synthesized by the co-precipitation method are stoichiometric, single magnetoplumbite phase with crystallite sizes in the range of 35–48 nm. The dc-electrical resistivity of the pure Sr–Ba hexaferrite is enhanced to almost 10² times by doping with Ce–Ni contents of x = 0.06; y = 0.60. The dielectric constant and dielectric loss tangent decrease to values 14 and <0.2, respectively, by increasing the frequency up to 1 MHz. Small relaxation peaks at frequencies >10⁵ Hz are observed for the samples with Ce content of x > 0.06. The values of saturation magnetization increase from 66.32 to 84.33 emu/g and remanance magnetization from 42.64 to 56.01 emu/g but coercivity decreases from 2.85 to 1.59 kOe by substitution of Ce–Ni. Sharp ferri-paramagnetic transition is observed in the samples, which is confirmed by DSC results. Ce–Ni substitution acts to reduce the electron-hopping between Fe²⁺/Fe³⁺ ions and also improves the magnetic properties. These characteristics are desirable for their possible use in microwave and chip devices.     

Effect of MgWO4 content on properties of Ba0.5Sr0.5TiO3 composite ceramics for tunable microwave applications

xMgWO₄-(1 − x) Ba_0.5Sr_0.5TiO₃ (x = 0.0, 5.0, 15.0, 25.0 and 35.0 wt%) composite ceramics were prepared via solid state reaction processing. Their structural and dielectric properties were systematically characterized. A significant increase in grain size was observed with increasing MgWO₄ content, which was accompanied by obvious variations in dielectric properties of the composite ceramics. It is found that the permittivity peaks of the samples gradually shifted to low temperatures with increasing MgWO₄ content. At the same time, tunabilities of the composite ceramics decreased, but their Q values increased. The sample with 35 wt% MgWO₄ possesses a high tunability of 16.8% (∼10 kHz), a low permittivity of 65 and an appropriate Q value of 309 (∼4.303 GHz), which meet the requirements of high power and impedance matching, thus making it a promising candidate for applications as electrically tunable microwave devices.     

Microwave dielectric and elastic properties of glass-added Ba6−3xR8+2xTi18O54 (x = 2/3)

Microwave dielectric properties of Ba_6−3xSm_8+2xTi₁₈O₅₄ (x = 2/3) [BST] ceramics with the addition of 0–3 wt.% of various glasses have been studied. It has been found that the addition of 0.5 wt.% of the glasses decreases the sintering temperature by about 150 °C. In general, addition of 0.5 wt.% of Zn, Mg and Pb-based glasses deteriorate the quality factor, whereas aluminum and barium borosilicates do not decrease it considerably. The quality factor and dielectric constant decrease with increasing amount of glass. The temperature coefficient of resonant frequency shifts towards positive or negative depending on the composition of the glass. A glass–ceramic composite with a dielectric constant 64, Q × f nearly 8500 GHz and near to zero τ_f could be obtained at a sintering temperature of 1175 °C when 3–4 wt.% Al₂O₃–B₂O₃–SiO₂ glass was added to BST ceramic. The Young's modulus decreases with increasing amount of glass, irrespective of the composition of glass.     

Tunable and microwave dielectric properties of Ba0.5Sr0.5TiO3-BaWO4 composite ceramics doped with Co2O3

Co₂O₃ doped BaWO₄-Ba_0.5Sr_0.5TiO₃ composite ceramics, prepared by solid-state route, were characterized systematically, in terms of their phase compositions, microstructure and microwave dielectric properties. Doping of Co₂O₃ promoted grain growth, reduced Curie temperature and broadened phase-transition temperature range of BaWO₄-Ba_0.5Sr_0.5TiO₃, which were attributed mainly to the substitution of Co³⁺ for Ti⁴⁺ at B site in the perovskite lattice. Dielectric diffusion behaviors of the composite ceramics were discussed. The composite ceramics all had dielectric tunability of higher than 10% at 30 kV/cm and 10 kHz, with promising microwave dielectric properties. Specifically, the sample doped with 0.2 wt.% Co₂O₃ exhibited a tunability of 20%, permittivity of 225 and Q of 292 (at 1.986 GHz), making it a suitable candidate for applications in electrically tunable microwave devices.     

Dielectric properties of low temperature sintered LiF doped BaFe0.5Nb0.5O3

Sintering of BaFe_0.5Nb_0.5O₃:BFN requires the use of high temperatures to achieve satisfactory densification of this material. The aim of this study is to determine the effect of LiF on the sintering and electrical properties of BFN ceramics (the LiF was added as a sintering agent). The results show that LiF lowers the sintering temperature by 150-200 °C without affecting the formation of BFN. Ceramics doped with 2-3% LiF show optimum densities of about 93-94% of the theoretical value when sintered at low temperatures (1000-1100 °C). Samples containing 2-3% LiF show the following dielectric behaviour. The dielectric constant curves are very broad over a wide temperature range, with room-temperature values of 7154 in the 2% LiF sample and 2527 in the 3% LiF sample. The dielectric constants gradually increase up to 300 °C to values of about 38,862 in the 2% LiF sample and 40,471 in the 3% LiF sample. Furthermore, the addition of 2-3% LiF to BFN causes a reduction in the room-temperature dielectric loss from 4.29 in undoped BFN to less than 1.2 for LiF-containing samples.     

Modified (K0.5Na0.5)(Nb0.9Ta0.1)O3 ceramics with high Qm

Lead-free ceramics (K_0.5Na_0.5)(Nb_0.9Ta_0.1)O₃ (KNNT) + x mol% K₄CuNb₈O₂₃ (KCN) + y mol% MnO₂ have been prepared using the conventional solid-state reaction technique. Crystalline structures and Microstructures were analyzed by X-ray diffraction and scanning electron microscope (SEM) at room temperature. The low dielectric loss tanδ and relatively high piezoelectric properties were obtained when KCN and MnO₂ were added into KNNT ceramics. The ceramics with x = 1.0, y = 0.50 exhibited excellent piezoelectric properties: high mechanical quality factor Q_m = 1563, piezoelectric coefficient d₃₃ = 96pC/N, electromechanical coupling coefficient k_p = 42.2%, k_t = 44.5%, k₃₃ = 58.4%, relative dielectric constant ε′ = 308, tanδ = 0.4%. This material is a promising candidate for the lead-free piezoelectric transformer applications.     

Improved dielectric properties of chemical solution derived Pb0.5Sr0.5TiO3 thin films by a layer-by-layer annealing method

Pb_0.5Sr_0.5TiO₃ thin films were prepared on Pt/TiO₂/SiO₂/Si and LaNiO₃ (LNO)/Si substrates by using chemical solution deposition technique, and a layer-by-layer annealing method was used in an attempt to improve the dielectric properties of the thin films. The structure, dielectric, and ferroelectric properties of the thin films were investigated. Improved dielectric properties of the thin films were clearly confirmed: the dielectric constant and dielectric loss for the films on Pt/TiO₂/SiO₂/Si substrates annealed at 650 °C were 1064 and 0.027, respectively, at 1 kHz, with a dielectric tunability of more than 50%; similarly, the films prepared on LNO/Si substrates, showed a high dielectric constant of 1280 and a low dielectric loss of 0.023, at 1 kHz. P-E hysteresis loop measurements indicated that the remanent polarization and coercive field for the films on Pt/TiO₂/SiO₂/Si substrates annealed at 650 °C were 15.7 μC/cm² and 51 kV/cm, respectively.     

Dielectric and piezoelectric properties of LiSbO3 doped 0.995 K0.5Na0.5NbO3-0.005BiFeO3 piezoelectric ceramics

LiSbO₃ doped and undoped 0.995 K_0.5Na_0.5NbO₃-0.005BiFeO₃ piezoelectric ceramics with high properties have been fabricated in air by the conventional ceramic processing. By adding LiSbO₃ to K_0.5Na_0.5NbO₃-BiFeO₃ ceramics, the dielectric and piezoelectric properties evidently increase. The doped ceramics exhibit good electrical properties. The enhanced piezoelectric properties of the ceramics should be attributed to optimum LiSbO₃ substitution and better microstructure with high density. Results show that LiSbO₃ doped K_0.5Na_0.5NbO₃-BiFeO₃ lead-free piezoelectric ceramics are a promising lead-free piezoelectric material for applications in different devices.     

A low-temperature reactive sintering process for the 5Li2O–1Nb2O5–5TiO2 microwave dielectric ceramics

The B₂O₃-doped 5Li₂O–1Nb₂O₅–5TiO₂ composite microwave dielectric ceramics prepared by conventional and low-temperature single-step reactive sintering processes were investigated in the study. Without any calcinations involved, the Nb₂O₅ mixture of Li₂CO₃ and TiO₂ was pressed and sintered directly in the reactive sintering process. More uniform and finer grains could be obtained in the 5Li₂O–1Nb₂O₅–5TiO₂ ceramics by reactive sintering process, which could effectively save energy and manufacturing cost. And relatively good microwave dielectric properties of _r = 41, Q × f = 9885 GHz and τ_f = 43.6 ppm/°C could be obtained for the 1 wt.% B₂O₃-doped ceramics reactively sintered at 900 °C.     

Polarization dependence of the optical response in SnO2 and the effects from heavily F doping

The optical properties of intrinsic SnO₂ (TO) and fluorine doped (FTO) are characterized in terms of the dielectric function ε(ħω) = ε₁(ħω) + iε₂(ħω) by electronic structure calculations. The intrinsic TO shows intriguing absorption characteristics in the 3.0–8.0 eV region: (i) the low energy region of the fundamental band gap (3.2 < ħω < 3.9 eV), the optical transitions Г₃⁺ → Г₁⁺ (valence-band maximum to conduction-band minimum) is symmetry forbidden, and the band-edge absorption is therefore extremely weak. (ii) In the higher energy region (3.9 < ħω < 5.1 eV) the Г₅⁻ → Г₁⁺ transitions (from the second uppermost valence band) is strongly polarized perpendicular to the main c axis. (iii) Transitions with polarization axis parallel to c axis are generated from Г₂⁻ → Г₁⁺ transitions (from the third uppermost valence bands), and dominates at high energies (5.1 < ħω eV). Heavily F doped TO (FTO) with doping concentrations n_F = 4 × 10²⁰ cm^− 3 changes the absorption significantly: (iv) Substitutional F_O generates strong inter-conduction band absorption at 0.8, 2.2, and 3.8 eV which affects also the high frequency dielectric constant ε_∞. (v) Interstitial F_i is inactive as a single dopant, but act as a compensating acceptor in highly n-type FTO. This explains the measured non-linear dependence of the resistivity with respect to F concentration.     

Effect of CuO on the sintering and cryogenic microwave characteristics of (Zr0.8Sn0.2)TiO4 ceramics

The effect of CuO on the sintering temperature, microstructure and microwave dielectric properties of (Zr_0.8Sn_0.2)TiO₄ (ZST) modified with 1 wt% of ZnO has been investigated. Microwave dielectric properties of ZST ceramics are measured from cryogenic to room temperatures (15–290 K). Crystallite sizes of sintered ZST ceramics as derived from XRD are in the 30–50 nm range. The addition of CuO effectively reduced the sintering temperature to 1300 °C, possibly due to liquid-phase effects. Addition of CuO did not cause any secondary phases up to 1.5 wt% of CuO. The dielectric constant (ε_r) and temperature coefficient of resonant frequency (τ_f) of ZST ceramics do not significantly vary with temperature, whereas the unloaded quality factor (Q_u) changes noticeably. It is found that the Q_u factor of the sample without CuO decreased with increase in temperature, whereas the samples with addition of CuO up to 1.0 wt% showed less dependence on temperature. The Q_u factor of CuO-free ZST is 15,000 and that of ZST with 0.5 wt% of CuO is 11,800 at 15 K. The Q_u factor while measured at room temperature ranged between 2900 and 7000. Efforts were made to understand whether the increase in Q_u factor at both cryogenic and room temperatures is the result of intrinsic or extrinsic factors.     

Structural, dielectric, impedance and optical properties of CaBi2B2O7 glasses and glass-nanocrystal composites

Optically clear glasses were fabricated by quenching the melt of CaCO₃–Bi₂O₃–B₂O₃ (in equimolecular ratio). The amorphous and glassy characteristics of the as-quenched samples were confirmed via the X-ray powder diffraction (XRD) and differential scanning calorimetric (DSC) studies. These glasses were found to have high thermal stability parameter (S). The optical transmission studies carried out in the 200–2500 nm wavelength range confirmed both the as-quenched and heat-treated samples to be transparent between 400 nm and 2500 nm. The glass-plates that were heat-treated just above the glass transition temperature (723 K) for 6 h retained ≈60% transparency despite having nano-crystallites (≈50–100 nm) of CaBi₂B₂O₇ (CBBO) as confirmed by both the XRD and transmission electron microscopy (TEM) studies. The dielectric properties and impedance characteristics of the as-quenched and heat-treated (723 K/6 h) samples were studied as a function of frequency at different temperatures. Cole–Cole equation was employed to rationalize the impedance data.     

Effects of CuO doping on the electrical properties of 0.98K0.5Na0.5NbO3-0.02BiScO3 lead-free piezoelectric ceramics

CuO-doped 0.98K_0.5Na_0.5NbO₃-0.02BiScO₃ (0.98KNN-0.02BS-xCu) lead-free piezoelectric ceramics have been fabricated by ordinary sintering technique. The effects of CuO doping on the dielectric, piezoelectric, and ferroelectric properties of the ceramics were mainly investigated. X-ray diffraction reveals that the samples at doping levels of x ≤ 0.01 possess a pure tetragonal perovskite structure. The specimen doped with 1 mol% CuO exhibits enhanced electrical properties (d₃₃ ~ 207 pC/N, k_p ~ 0.421, and k_t = 0.424) and relatively high mechanical quality factor (Q_m = 288). These results indicate that the 0.98KNN-0.02BS-0.01Cu ceramic is a promising candidate for lead-free piezoelectric ceramics for applications such as piezoelectric actuators, harmonic oscillator and so on.     

Influence of ZnO additions to 0.8(Mg0.95Co0.05)TiO3–0.2Ca0.6La0.8/3TiO3 ceramics on sintering behavior and microwave dielectric properties

The effects of ZnO addition on the microstructures and microwave dielectric properties of 0.8(Mg_0.95Co_0.05)TiO3–0.2Ca_0.6La_0.8/3TiO₃ ceramics were investigated. ZnO was selected as liquid phase sintering aids to lower the sintering temperature of 0.8(Mg_0.95Co_0.05)TiO3–0.2Ca_0.6La_0.8/3TiO₃ ceramics. With ZnO additives, the densification temperature of 0.8(Mg_0.95Co_0.05)TiO₃–0.2Ca_0.6La_0.8/3TiO₃ can be effectively reduced from 1450 to 1200–1325 °C. The crystalline phase exhibited no phase difference at low addition levels (0.25–2 wt.%). It is found that low-level doping of ZnO (0.25–2 wt.%) can significantly improve the density and dielectric properties of 0.8(Mg_0.95Co_0.05)TiO₃–0.2Ca_0.6La_0.8/3TiO₃ ceramics. The quality factors Q × f were strongly dependent upon the amount of additives. Q × f values of 36 000 and 13 000 GHz could be obtained at 1200–1325 °C with 1 and 2 wt.% ZnO additives, respectively. During all additives ranges, the relative dielectric constants were significantly different and ranged from 23.1 to 27.96. The temperature coefficient varies from 14.1–24.3 ppm/°C.     

Electrochemical characteristics of Ba0.5Sr0.5Co0.8Fe0.2O3−δ–Sm0.2Ce0.8O1.9 composite materials for low-temperature solid oxide fuel cell cathodes

In this paper, Ba_0.5Sr_0.5Co_0.8Fe_0.2O_3−δ–xSm_0.2Ce_0.8O_1.9 (BSCF–xSDC, x = 0–60 wt.%) composite cathodes were prepared by soft chemical methods, and then examined for potential applications in lower temperature solid oxide fuel cells. Both DC polarization and AC impedance spectroscopy measurements indicated that the addition of SDC electrolyte into BSCF remarkably improved the electrochemical properties. The optimum composition was found to be BSCF–30SDC, which exhibited 5.5 times higher polarization current density and 15.1% polarization resistance, compared with the pure-phase BSCF cathode at 550 °C.     

Dielectric and piezoelectric properties of Y2O3 doped (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free piezoelectric ceramics

Y₂O₃ doped lead-free piezoelectric ceramics (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ (0-0.7 wt%) were synthesized by the conventional solid state reaction method, and the effect of Y₂O₃ addition on the structure and electrical properties was investigated. X-ray diffraction shows that Y₂O₃ diffuses into the lattice of (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ to form a solid solution with a pure perovskite structure. The temperature dependence of dielectric constant of Y₂O₃ doped samples under various frequencies indicates obvious relaxor characteristics different from typical relaxor ferroelectric and the mechanism of the relaxor behavior was discussed. The optimum piezoelectric properties of piezoelectric constant d₃₃ = 137 pC/N and the electromechanical coupling factor k_p = 0.30 are obtained at 0.5% and 0.1% Y₂O₃ addition, respectively.     

Silver cofirable Bi1.5Zn0.92Nb1.5O6.92 microwave ceramics containing CuO-based dopants

Bi₂O₃–ZnO–Nb₂O₅ system has emerged as a good low sintering (1050 °C) microwave material because it exhibits high dielectric constant and low temperature coefficient of resonance frequency (τ_f). We have lowered the sintering temperature of Bi_1.5Zn_0.92Nb_1.5O_6.92 (BZN) below 900 °C by using 3 wt.% of CuO-based dopants, such as 0.21BaCO₃–0.79CuO (BC) and 0.81MoO₃–0.19CuO (MC). The doped BZN exhibits high microwave dielectric constant at 2.3 GHz (k  120). The interfacial behavior between BZN and silver was investigated by using X-ray diffractometer, scanning electronic microscope, and electronic probe microanalyzer. The extent of silver migration of MC and BC dopants is reduced at least by one order of magnitude as compared with V₂O₅ dopant when the samples was prepared at 900 °C for 4 h. Thus, CuO-based dopants can replace V₂O₅ to lower the sintering temperature of BZN and to be cofired with silver.     

Study of the mechanical properties of CeO2 layers with the nanoindentation technique

The mechanical properties of CeO₂ layers that are undoped or doped with other elements (e.g. Zr and Ta) are a topic of special interest specially in the manufacturing of superconductor buffer layers by pulsed electron deposition. Nowadays, the trend is to produce small devices (i.e. coated conductors), and the correct mechanical characterization is critical. In this sense, nanoindentation is a powerful technique widely employed to determine the mechanical properties of small volumes. In this study, the nanoindentation technique allow us determine the hardness (H) and Young's modulus (E) by sharp indentation of different buffer layers to explore the deposition process of CeO₂ that is undoped or doped with Zr and Ta, and deposited on Ni–5%W at room temperature. This study was carried out on various samples at different ranges of applied loads (from 0.5 to 500 mN). Scanning electron microscopy images show no cracking for CeO₂ doped with Zr, as the doping agent increases the toughness fracture of the CeO₂ layer. This system, presents better mechanical stability than the other studied systems. Thus, the H for Zr–CeO₂ is around 2.75 · 10⁶ Pa, and the elastic modulus calculated using the Bec et al. and Rar et al. models equals 249 · 10⁶ Pa and 235 · 10⁶ Pa respectively.