低阻硅衬底上形成的低损耗共平面波导传输线

在厚膜多孔硅 (PS) /氧化多孔硅 (OPS)衬底上 ,结合聚酰亚胺涂层改善表面 ,研制低损耗、高性能射频 (RF) /微波 (MW)共平面波导CPW(CoplanarWaveguide) .通过在N和P型硅上形成不同厚度PS膜 ,并对其上的CPW进行分析比较 ,厚膜PS与石英的共面波导插入损耗非常接近 ,远小于在 2 0 0 0Ω·cm高阻硅上形成的多晶硅 -氧化硅组合衬底 :在 0 33GHz范围 ,插入损耗小于 5dB/ 1.2cm ;33 4 0GHz范围 ,小于 7.5dB/ 1.2cm .     

一种简单的高温超导连续通带双工器设计

在双抛LaAlO3衬底上外延生长的钇系高温超导薄膜YBCO的基片上,设计并制作一个四级高温超导连续通带双工器（工作频率3.0～3.5GHz和3.5～4.0GHz）,与常规金属材料的双工器相比,体积减少3/4,插损减少2dB。在液氮温区77K时,测试结果为：通带内插损小于0.8dB,通带间带外抑制大于30dB通带中心频率。为近一步研制高温超导多工器提供了很好的借鉴,对将来高温超导信道化接收机系统的研究和设计具有重要的意义。     

低损耗衬底上实现无源低通滤波器

分析比较了不同种类衬底上无源器件(片上电感和电容)的损耗机理,在OPS(氧化多孔硅)和HR(高阻硅)低损耗衬底上分别实现了片上低通滤波器.为了研究衬底损耗,设计了平面螺旋电感,其Q值在两种衬底上的仿真结果都超过了20.在OPS衬底上的低通滤波器实测-3dB带宽为2.9GHz,通带插入损耗在500MHz为0.87dB;在HR衬底上的低通滤波器实测-3dB带宽为2.3GHz,通带插入损耗在500MHz为0.42dB.     

低损耗衬底上实现无源低通滤波器

分析比较了不同种类衬底上无源器件(片上电感和电容)的损耗机理,在OPS(氧化多孔硅)和HR(高阻硅)低损耗衬底上分别实现了片上低通滤波器.为了研究衬底损耗,设计了平面螺旋电感,其Q值在两种衬底上的仿真结果都超过了20.在OPS衬底上的低通滤波器实测-3dB带宽为2.9GHz,通带插入损耗在500MHz为0.87dB;在HR衬底上的低通滤波器实测-3dB带宽为2.3GHz,通带插入损耗在500MHz为0.42dB.     

基于磁性光子晶体的高性能微波带通滤波器

提出了一种基于磁性光子晶体的高性能微波带通滤波器。仿真计算和实验测量结果表明,该滤波器矩形系数好,插入损耗小,带外抑制高且带内平坦。研制的中心频率为10.75 GHz的通带滤波器,带宽达1.3GHz,通带内插入损耗小于5dB,带外抑制50dB以上。改变磁性圆柱的半径或磁性光子晶体的晶格常数可设计出工作在不同频段,具有不同带宽的微波滤波器。     

基于磁性光子晶体的高性能微波带通滤波器

提出了一种基于磁性光子晶体的高性能微波带通滤波器。仿真计算和实验测量结果表明,该滤波器矩形系数好,插入损耗小,带外抑制高且带内平坦。研制的中心频率为10.75 GHz的通带滤波器,带宽达1.3GHz,通带内插入损耗小于5dB,带外抑制50dB以上。改变磁性圆柱的半径或磁性光子晶体的晶格常数可设计出工作在不同频段,具有不同带宽的微波滤波器。     

双膜桥微波MEMS开关

介绍了一种双膜桥微波MEMS开关 ,给出了开关的设计与优化方法 ,建立了开关的仿真模型 ,使用硅表面微机械工艺制造了双膜桥开关样品 ,其主要结构为硅衬底上制作CPW金属传输线电极和介质层 ,然后制作具有微电感结构的金属膜桥 ,提高了开关隔离度。利用HFSS软件仿真的结果表明 ,该开关在微波低频段 (3～ 6GHz)有着很好的隔离性能。研制的开关样品在片测试的电性能指标为 :插损小于 0 .3dB ,隔离度大于 4 0dB ,驱动电压小于 2 4V。     

X 波段阶梯阻抗滤波器设计

微带发夹型阶梯阻抗滤波器有尺寸小、成本低、易于集成和寄生通带可调节等特点,在微波电路中有着广泛的应用。文章设计了一个X 波段阶梯阻抗滤波器,中心频率为8.1GHz,带宽超过400MHz ,在7.9 GHz -8.3 GHz 的通带内插损优于3.5dB,带内波动小于1dB,在6.5GHz 和9GHz 处衰减大于50dB,滤波器尺寸为10mm*10mm。     

一种超小型带通滤波器

这里介绍一种超小型微波集成带通滤波器,它具有结构精巧、工艺简单、节省材料的优点.通带频率为2～4GHz,带外抑制可达40dB以上.用扫频仪测试,除通带部分外,在18GHz以下无寄生通带产生,带内损耗1.2dB左右,是一种值得推广应用的     

双膜桥微波MEMS开关

介绍了一种双膜桥微波MEMS开关，给出了开关的设计与优化方法，建立了开关的仿真模型，使用硅表面微机械工艺制造了双膜桥开关样品，其主要结构为硅衬底上制作CPW金属传输线电极和介质层，然后制作具有微电感结构的金属膜桥，提高了开关隔离度。利用HFSS软件仿真的结果表明，该开关在微波低频段(3～6GHz)有着很好的隔离性能。研制的开关样品在片测试的电性能指标为：插损小于0．3dB，隔离度大于40dB，驱动电压小于24V。     

Fabrication of MOD-derived YBCO films on [001]LaAlO/sub 3/ and their application to /spl lambda//4 CPW SIR BPFs

Chemically derived epitaxial thin films of YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) are fabricated on [001]LaAlO/sub 3/ substrates by the metalorganic-deposition (MOD) process, which has advantages of high quality, nonvacuum, low-cost, and large-scale production of high-T/sub c/ superconducting films. The MOD-derived YBCO films have a sharp transition at the critical temperature (90.4 K) and a high-quality film with a surface resistance of 0.13 m/spl Omega/ (30 K, 9.98 GHz) is obtained. As a microwave application, simple and compact bandpass filters (BPFs) using /spl lambda//4 coplanar-waveguide. stepped-impedance resonators are demonstrated on the YBCO films. A two-stage Chebyshev BPF of center frequency of 5.731 GHz, bandwidth of 135 MHz, and insertion loss of 0.29 dB with little input power dependency in a power range less than 10 dBm is realized on the film.     

S-parameter measurements and microwave applications ofsuperconducting flux flow transistors

Microwave two-port S-parameter measurements and modeling of superconducting flux flow transistors are presented. The transistors, based on the magnetic control of flux flow in any array of high temperature superconducting weak links, exhibit significant available power gain at microwave frequencies (over 20 dB at 7-10 GHz in some devices). The input impedance is largely inductive while the output impedance is both resistive and inductive. It is shown that the characteristics of these devices are useful in numerous applications including matched amplifiers, phase shifters and active impedance convertors     

High-temperature superconducting delay lines and filters onsapphire and thinned LaAlO3 substrates

The very low microwave surface resistance of high-temperature-superconductor (HTS) thin films allows the realization of microwave devices with performance superior to those made by conventional technology. Superconducting delay lines, for example, have very low propagation loss and dispersion. Long, low-loss, superconducting delay lines on both thinned LaAlO₃ and sapphire substrates are presented. Delay lines with 27- and 44-ns delay have been made, for the first time, on 5-cm-diameter 254- and 127-μm-thick LaAlO₃ substrates, respectively. The insertion losses at 77 K and 6 GHz are 6 and 16 dB, respectively. Delay lines with 9-ns delay have, for the first time, been produced on M-plane sapphire substrates and demonstrate, at 77 K, an insertion loss of 1.0 dB at 6 GHz. A 2.5%-bandwidth 10 GHz four pole edge-coupled bandpass filter on M-plane sapphire substrates is also reported. The filter has minimum insertion loss of less than 0.5 dB at 9.75 GHz and 71 K     

Microwave dielectric properties of DNA based polymers between 10 and 30 GHz

Deoxyribonucleic acid (DNA) based polymer thin-films were characterized at microwave frequencies for the first time. The dielectric properties of the film were extracted from comparison of the propagation constants of the co-planar waveguide (CPW) lines on bare MgO substrates and the DNA based films on MgO substrates. The insertion loss introduced by the DNA film is only 0.1 dB at 10 GHz and 0.5 dB at 30 GHz. The relative dielectric constant of the DNA based film averages to four at microwave frequencies, and the loss-tangent was below 0.1 up to 30 GHz.     

Dual-Double Slot Antennas Fabricated with Single Superconducting Film for Millimeter Wave Camera

We propose an entirely plane-structure camera for millimeter wave astronomy, in order to reduce production cost and time. The camera is composed of a silicon lens-let, antennas, feed lines, and detectors made from the same superconducting aluminum film on a silicon substrate. A couple of double-slot antennas are located the same focal plane of a small substrate lens to enhance the packing density of detectors and observation efficiency. To achieve high sensitivity, we adapted a microwave kinetic inductance detector as a photon sensor, which consists of a superconducting microresonator. We examined the optical performance of the camera attached to a silicon lens array at 220 GHz in a 0.3 K cryostat. The measured beams were in good agreement with the calculations within the dynamic range of the setup (20 dB). Polarization misalignments between the dual-double slot antenna were less than 2^°, and cross-polarization level was around ?7 dB. The relatively high cross-polarization would be explained by an antenna crosstalk mediated by quasiparticle diffusion.     

星载光控高温超导衰减器及其光热效应影响时长

提出了一种针对星载高温超导系统使用的新型光控高温超导微波可变衰减器。该衰减器的实质是利用高温超导薄膜极低的微波表面电阻和卓越的激光响应特性，实现优良的衰减性能。主要结论包括：高温超导衰减器的插入损耗小于0．2dB，比常规衰减器低1个数量级；当激光波长为0．681μm时，高温超导衰减器的可变衰减精度小于0．01dB，比常规衰减器至少低1～2个数量级；研究了激光热效应的影响时长，当激光功率为45mW时，高温超导微带线的激光响应幅度约0．09dB，空间热效应影响持续时长约3．5s。     

Small-sized MMIC amplifiers using thin dielectric layers

Miniaturized MMIC amplifiers utilizing a multilayer structure composed of thin film transmission lines are presented. The fundamental characteristics of the thin film transmission lines for use in microwave active circuits are discussed through calculations by numerical analysis. A two-stage low-noise amplifier, a single-stage wideband amplifier, and a balanced amplifier are designed within very small areas, while good performance is maintained. The results include that a Ka-band single-stage amplifier is fabricated in a 0.8 mm×0.6 mm area with a gain of 8.0-9.5 dB in the frequency range of 16-26.5 GHz and input/output return losses of better than 8 dB at 26.5 GHz. The proposed amplifier configurations can be applied to high density integration of one-chip MMIC modules     

Absorption at high microwave power by large-area Tl-basedsuperconducting films on metallic substrates

Microwave surface resistance measurements have been made on large-area Ti-Ba-Ca-Cu-O thick films magnetron-sputtered onto oriented Ag alloy substrates by replacing the end wall of an 18 GHz TE₀₁₁ mode Cu cavity with the superconducting film. The best surface resistance values obtained are 4 and 14 mΩ at 10 K and 77 K, respectively; corresponding Cu values are 8 and 21 mΩ. The dependence of the surface resistance on microwave power was measured in a similar way except that a Nb cavity was used instead of a Cu cavity. Typically, the surface resistance of the film begins to rise in 1-10 Oe of microwave field and saturates in 20-60 Oe. A model is presented relating the observed saturation to critical penetration of Josephson junctions. Films exhibiting the highest degree of c-axis texturing show the weakest dependence of surface resistance on power and also exhibit the sharpest transition to the superconducting state as measured at high frequency     

Design and performance of wideband GaAs MMIC's for high-speedoptical communication systems

Advanced design techniques for GaAs wideband direct-coupled amplifiers are described. The amplifier achieved a 20 dB gain with a 3 dB bandwidth of 13 GHz and a 5-7 dB noise figure. An equalizing amplifier module consisting of amplifier and variable attenuator monolithic microwave integrated circuits (MMICs) exhibited a high gain of 43 dB over a 10 GHz band with a controllable gain of 20-43 dB     

CPW Circulators with Barium Ferrite Thin Films

A miniaturized circulator using barium ferrite films with a coplanar waveguide(CPW) structure is designed and optimized by high frequency electromagnetic field simulations based on finite element methods.The best circulation performance of the film circulator based on 10 μm thick barium ferrite thin films is obtained with an insertion loss of 0.13 dB and an isolation of 22.89 dB around 36.9 GHz.The microwave characteristics of film circulators with CPW and CPW with ground(CPWG) structures have been compared.The influences of the gap between the ground and the signal line,and the ferromagnetic resonance line width on the microwave properties are also studied.