Effect of stabilizer on optical and structural properties of MgO thin films prepared by sol–gel method

The effects of monoethanolamine (MEA) and acetylacetone (ACAC) addition as stabilizer on the crystallization behaviour, morphology and optical properties of magnesium oxide were investigated using thermogravimetry (TG/DTG), X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-Visible, photoluminescence (PL) and Fourier transform infrared (FTIR) spectroscopy. Stabilizer addition reduces transparency of the films. MgO films prepared at 500 °C showed weak orientation of (200). However, the films prepared by addition of stabilizer are amorphous. MgO powders were prepared for exhibiting the structural properties. The patterns of MgO powders showed a preferred orientation of (200). The addition of stabilizer causes a reduction in grain size. SEM micrographs show that a homogenous and crack-free film can be prepared at 500 °C and addition of stabilizer causes an increase in packing density.     

Effect of annealing temperature on electrical and nano-structural properties of sol–gel derived ZnO thin films

Zinc oxide (ZnO) thin films have been prepared on silicon substrates by sol–gel spin coating technique with spinning speed of 3,000 rpm. The films were annealed at different temperatures from 200 to 500 °C and found that ZnO films exhibit different nanostructures at different annealing temperatures. The X-ray diffraction (XRD) results showed that the ZnO films convert from amorphous to polycrystalline phase after annealing at 400 °C. The metal oxide semiconductor (MOS) capacitors were fabricated using ZnO films deposited on pre-cleaned silicon (100) substrates and electrical properties such as current versus voltage (I–V) and capacitance versus voltage (C–V) characteristics were studied. The electrical resistivity decreased with increasing annealing temperature. The oxide capacitance was measured at different annealing temperatures and different signal frequencies. The dielectric constant and the loss factor (tanδ) were increased with increase of annealing temperature.     

Effect of Zn doping on structure and ferroelectric properties of PST thin films prepared by sol–gel method

(Pb _y Sr_1−y )Zn _x Ti_1−x O_3−x thin films were prepared on ITO/glass substrate by sol–gel process using dip-coating method. The phase structure, morphology and ferroelectric property of the thin film were studied. All the thin films show the typical perovskite phase structure. Both the crystallinity and c/a ratio of the perovskite phase increases initially and then decreases gradually with doping Zn in the thin film. Ferroelectric properties of the Zn-doped PST thin films, including ferroelectric hysteresis-loop, remnant polarization and coercive force, decrease gradually with increasing Zn. And the effect of Zn on ferroelectric properties is more obvious in PST thin film with high content of Pb than that with low Pb although the high lead thin film exhibits high intrinsic ferroelectric properties.     

Optical properties and electrical resistivity of boron-doped ZnO thin films grown by sol–gel dip-coating method

Sol–gel dip-coating was used to grow ZnO thin films doped with various concentrations of B ranging from 0 to 2.5 at.% on quartz substrates. The effects of B doping on the absorption coefficient (α), optical band gap (E_g), Urbach energy (E_U), refractive index (n), refractive index at infinite wavelength (n_∞), extinction coefficient (k), single-oscillator energy (E_o), dispersion energy (E_d), average oscillator strength (S_o), average oscillator wavelength (λ_o), moments M₋₁ and M₋₃, dielectric constant (ε), optical conductivity (σ), and electrical resistivity (ρ) of the BZO thin films were investigated. The transmittance spectra of the ZnO and BZO thin films show that the transmittance of the BZO thin films was significantly higher than that of the ZnO thin films in the visible region of the spectrum and that the absorption edge of the BZO thin films was blue-shifted. The BZO thin films exhibited higher E_g, E_U, and E_o and lower E_d, λ_o, M₋₁ and M₋₃ moments, S_o, n_∞, and ρ than the ZnO thin films.     

Effect of solution concentration on the structural, optical and conductive properties of ZnO thin films prepared by sol–gel method

ZnO thin films with different solution concentrations (0.1–0.9 mol/L) were prepared by a simple sol–gel dip-coating technique. X-ray diffraction, ultraviolet–visible spectroscopy, Hall effect measurements and photoluminescence (PL) spectroscopy were employed to investigate the effect of solution concentration on the structural,optical and electrical conductive properties of the ZnO thin films. The results showed that the ZnO thin films preferentially oriented along the (002) direction at higher solution concentration. The careful study of the optical and electrical conductive properties showed that the resistivity decreased monotonously, while the transmittance increased first and then decreased when solution concentrations changed from 0.1 to 0.9 mol/L. Photoluminescence spectra indicated that the defect-related blue emission was increased with the enhancement of solution concentration. The mechanism of the blue emission, and the reasons why high solution concentration was favorable for forming high c-axis oriented ZnO thin films and obtaining low resistivity were also discussed in detail.     

Orientation-dependent microwave dielectric properties of Ba0.6Sr0.4TiO3 thin films prepared by sol–gel method

Barium strontium titanate (Ba_0.6Sr_0.4TiO₃, BST) thin films have been prepared on the (100) LaAlO₃ single-crystal substrates by sol–gel technique. The X-ray diffraction study indicated that the thin films exhibited (100) preferred orientation and random orientation depending upon the concentration of precursor solution. The nonlinear dielectric properties of the BST films were measured using an interdigital capacitor. The temperature dependence of dielectric constant of the BST thin films was measured at 1 MHz in the temperature range from ?100 to 80 °C. The Curie temperature T _c of the films derived from 0.1, 0.2 and 0.3 M was found to be ?18.5, ?32.5 and ?39.9 °C, respectively. The tunability of BST films with the (100) preferred orientation was 30.74 %, which was much higher than that of thin films with random orientation at the frequency of 10 kHz with an applied electric field of 80 kV/cm. The microwave dielectric properties of the BST thin films were measured by a vector network analyser from 1 to 10 GHz.     

The effect of secondary phases on electrical properties of ZnO-based ceramic films prepared by a sol–gel method

The ZnO-based ceramic films doped with Bi₂O₃, Sb₂O₃, MnO, Co₂O₃ and Cr₂O₃ were prepared for use as film varistors by a sol–gel method. The formation and the changes of the phases in the films doped with different dopants and annealed at different temperatures were investigated via X-ray diffraction analysis. Three secondary phases, i.e., Bi₂O₃, Zn₇Sb₂O₁₂ spinel and ZnCr₂O₄, were detected in the films when the annealing temperature was above 550 °C. The lattice constants of ZnO and Zn₇Sb₂O₁₂ spinel phase changed with dopants and the annealing temperature, indicating that the diffusion of the ions into the crystals of ZnO and spinel phase had taken placed. The redistribution of the ions changed the constituents of the intergranular phases and the relevant defect species in ZnO grains, and affected intensively the electrical properties of the films, which were used as film varistors. The highest nonlinear coefficient () with the lowest leakage current was achieved when the film, which was doped with Bi₂O₃, Sb₂O₃, MnO and Cr₂O₃, was annealed at 750 °C.     

Microstructure and ferroelectric properties of compositionally graded Nd-doped Bi4Ti3O12 thin films prepared by sol–gel method

The compositionally graded Bi_4?xNd_xTi₃O₁₂ (BNT) thin films were prepared on Pt/Ti/SiO₂/Si substrates by sol–gel method. Their microstructure, ferroelectric and dielectric properties were investigated. The single-phase upgraded and downgraded BNT films were obtained with (117) preferred orientation. Compared to the homogeneous BNT films prepared by the same conditions, the remanent polarization (P _r) and permittivity (ε _r) of compositionally graded BNT films were significantly enhanced. The upgraded BNT film showed larger 2P _r (34.9?μC/cm²) and ε _r (509), and those of downgraded BNT film were 29.4?μC/cm² and 505. Bi element in the downgraded BNT film accumulated near the interface of film/Pt bottom electrode, which deteriorated the compositional gradient and resulted in decreasing 2P _r and ε _r compared to the upgraded BNT film.     

Effects of Bi doping on dielectric and ferroelectric properties of PLBZT ferroelectric thin films synthesized by sol–gel processing

[Pb _0·95(La_1???y Bi _y ) _0·05][Zr_0·53Ti_0·47]O₃ (PLBZT) ferroelectric thin films have been synthesized on indium tin oxide (ITO)-coated glass by sol–gel processing. PLBZT thin films were annealed at a relatively low temperature of 550 °C in oxygen ambient. Effects of Bi doping on structure, dielectric and ferroelectric properties of PLBZT were investigated. Bi doping is useful in crystallization of PLBZT films and promoting grain growth. When the Bi-doping content ${\mathit{y}}$ is not more than 0·4, an obvious improvement in dielectric properties and leakage current of PLBZT was confirmed. However, when the Bi-doping content is more than 0·6, the pyrochlore phase appears and the remnant polarization P _r of PLBZT thin films is smaller than that of $\left({Pb}_{{1-x}} {\bf La}_{x}\right)\!\!\left({Zr}_{{1-y}} {Ti}_{y}\right){O}_{3}$ (PLZT) thin films without Bi doping. PLBZT thin films with excessive Bi-doping content are easier to fatigue than PLZT thin films.     

Effect of the Brij 30 porogen on the properties of sol–gel derived thin polymethylsilsesquioxane films

Thin polymethylsilsesquioxane films with Brij 30 porogen concentrations in the range ω_surf = 15.5–52.5 wt % have been produced by a sol–gel process. Their dielectric permittivity, refractive index, relative porosity, and shrinkage have been measured as functions of heat treatment temperature and porogen concentration.     

Influence of precursor source on sol–gel deposited ZnO thin films properties

Zinc oxide thin films were deposited by sol gel technique on glass substrates using different precursors (zinc acetate, zinc nitrate and zinc chloride). In the present work we investigate the precursor nature influence on structural, morphological, optical, electrical properties and photocatalytic activity of ZnO thin films. For this purpose we have used X-rays diffraction (XRD), atomic force microscopy (AFM), UV–visible spectroscopy and Hall effect measurements for films characterization. The obtained results indicated that ZnO films properties are strongly influenced by the nature of the used precursor as reactant. Films photocatalytic activity was evaluated by the photo-degradation of methylene blue (MB) dissolved in aqueous solution under UV-A light. The obtained results indicated that ZnO thin films prepared from zinc acetate are more efficient than those prepared from zinc nitrate and zinc chloride.     

Influence of pH on ZnO nanocrystalline thin films prepared by sol–gel dip coating method

ZnO nanocrystalline thin films have been prepared on glass substrates by sol?Cgel dip coating method. ZnO thin films have been coated at room temperature and at four different pH values of 4, 6, 8 and 10. The X-ray diffraction pattern showed that ZnO nanocrystalline thin films are of hexagonal structure and the grain size was found to be in the range of 25?C45?nm. Scanning electron microscopic images show that the surface morphology improves with increase of pH values. TEM analysis reveals formation of ZnO nanocrystalline with an average grain size of 44?nm. The compositional analysis results show that Zn and O are present in the sample. Optical band studies show that the films are highly transparent and exhibit a direct bandgap. The bandgap has been found to lie in the range of 3 $\boldsymbol\cdot$ 14?C3 $\boldsymbol\cdot$ 32?eV depending on pH suggesting the formation of ZnO nanocrystalline thin films.     

Effect of temperature on dielectric and electrical properties of Co–Zr doped barium hexaferrites prepared by sol–gel method

In the present research, temperature dependence of dielectric properties of cobalt–zirconium substituted barium hexaferrites, fabricated using citric acid sol gel method, has been reported. The dielectric constant, loss tangent and A.C. conductivity were investigated on the circular pellets in temperature range 30–350 °C and frequency range 10 kHz–1 MHz using impedance analyzer. This paper also presents impedance (Z*) and electric modulus (M*) analysis of all the samples. The single semi-circular arcs, observed in impedance Nyquist plots, suggest the dominance of grain boundaries in the conduction process. Dielectric constant and dielectric loss tangent show very small variation up to 200–250 °C temperature and abrupt increase afterwards up to 350 °C. Thus, these ferrites can be successfully implemented in the practical applications like capacitors, microwave devices etc. up to 250 °C, without any significant change in properties.