Preparation and characterization of P3HT:CuInSe2:TiO2 thin film for hybrid solar cell applications

Improved efficiency of hybrid Al/Ca/P3HT:CISe:TiO₂/PEDOT:PSS/ITO thin film solar cells was obtained by optimizing P3HT/CISe ratio. This study also investigated the effects of TiO₂ content in the P3HT:CISe active layer, and altering annealing temperature conditions. The optimum TiO₂ content and annealing temperature for solar cell efficiency is 25 wt.% and 150 °C, respectively. The optimal results for the open circuit voltages (V_OC), short-circuit current density (J_SC), fill factor (FF), and efficiency (η) of the prepared hybrid thin film solar cell were V_OC = 0.335 V, J_SC = 8.07 mA/cm², FF = 52.75, and η = 1.425.     

DNA-like dye-sensitized solar cells based on TiO2 nanowire-covered nanotube bilayer film electrodes

This paper reports a two-step formation of a TiO₂ nanowire-covered nanotube bilayer film technique and its application in DNA-like dye-sensitized solar cells. The bilayer film was prepared by the electrochemical anodization first and then the hydrothermal method. From the reflectivity spectrum and scanning electron microscopy it is observed that the nanowire layer on the top cannot only decrease the reflectivity of the film, but also play a role to modify the film cracks. Compared with the dye-sensitized solar cells based on a single layer electrode, the cell with the bilayer film showed higher photovoltaic parameters and a lower dark current, which is due to its higher light harvesting efficiency and lower charge recombination between the electrolyte and the substrates.     

Fabrication and properties of meso-macroporous electrodes screen-printed from mesoporous titania nanoparticles for dye-sensitized solar cells

A meso-macroporous TiO₂ film electrode was fabricated by using mesoporous TiO₂ (m-TiO₂) nanoparticles through a screen-printing technique in order to efficiently control the main fabrication step of dye-sensitized solar cells (DSSCs). The qualities of the screen-printed m-TiO₂ films were characterized by means of spectroscopy, electron microscopy, nitrogen adsorption–desorption and photoelectrochemical measurements. Under the optimal paste composition and printing conditions, the DSSC based on the meso-macroporous m-TiO₂ film electrode exhibits an energy conversion efficiency of 4.14%, which is improved by 1.70% in comparison with DSSC made with commercially available nonporous TiO₂ nanoparticles (P25, Degussa) electrode printed with a similar paste composition. The meso-macroporous structure within the m-TiO₂ film is of great benefit to the dye adsorption, light absorption and the electrolyte transportation, and then to the improvement of the overall energy conversion efficiency of DSSC.     

Simulation approach for studying the performances of original superstrate CIGS thin films solar cells

In this work, we report on the performances of superstrate Cu(In,Ga)Se₂ (CIGS) thin film solar cells with an alternative SLG/SnO₂:F/CIGS/In₂Se₃/Zn structure using AMPS-1D (Analysis of Microelectronic and Photonic structures) device simulator. An inverted surface layer, n-type CIGS layer, is inserted between the In₂Se₃ buffer and CIGS absorber layers and the SnO₂:F layer is just a transparent conducting oxide (TCO). The simulation has been carried out by lighting through SnO₂:F. The obtained results show that the existence of so-called ‘ordered defect compound’ (ODC) layer in such a structure is the critical factor responsible for the optimization of the performances. Photovoltaic parameters were determined using the current density-voltage (J-V) curve. An optimal absorber and ODC layer thickness has been estimated, that improve significantly the devices efficiency exceeding 15% AM1.5 G. The variation of carrier density in In₂Se₃ layer has an influence on the superstrate CIGS cells performances. Moreover, the quantum efficiency (Q.E.) characteristics display a maximum value of about 80% in the visible range.     

The effects of the thickness of TiO2 films on the performance of dye-sensitized solar cells

Nanocrystalline anatase TiO₂ thin films with different thicknesses (0.5-2.0 μm) have been deposited on ITO-coated glass substrates by a sol-gel method and rapid thermal annealing for application as the work electrode for dye-sensitized solar cells (DSSC). From the results, the increases in thickness of TiO₂ films can increase adsorption of the N3 dye through TiO₂ layers to improve the short-circuit photocurrent (J_sc) and open-circuit voltage (V_oc), respectively. However, the J_sc and V_oc of DSSC with a TiO₂ film thickness of 2.0 μm (8.5 mA/cm² and 0.61 V) are smaller than those of DSSC with a TiO₂ film thickness of 1.5 μm (9.2 mA/cm² and 0.62 V). It could be due to the fact that the increased thickness of TiO₂ thin films also resulted in a decrease in the transmittance of TiO₂ thin films thus reducing the incident light intensity on the N3 dye. An optimum power conversion efficiency (η) of 2.9% was obtained in a DSSC with the TiO₂ film thickness of 1.5 μm.     

Visible light enhanced TiO2 thin film bilayer dye sensitized solar cells

Visible light enhanced nitrogen-sulfur (N-S) doped titanium dioxide (TiO₂) thin films were prepared by the sol-gel method using thiourea as a dopant. The physical and chemical properties of the TiO₂ thin films were greatly influenced by the amount of thiourea added to the sol-gel solution. The greatest shift to longer wavelengths for visible light absorption was observed with 0.6 g of thiourea in the precursor solution, while 0.4 g yielded the largest particle sizes. These single-cycle dip-deposited N-S doped TiO₂ thin films were used as visible light harvesters as well as blocking layers in dye sensitized solar cells. When deposited directly on conducting fluorine doped tin oxide electrodes, photo-conversion efficiencies were reduced. However, the opposite configuration, with N-S doped thin films on top of nanoporous TiO₂, yielded an increased open-circuit voltage of 0.84 V, a short-circuit current density of 9.86 mA cm⁻², and an overall conversion efficiency of 5.88% greater than that of a standard cell. The effectiveness of the blocking layer on the cell efficiencies was analyzed by electrochemical impedance spectroscopy.     

Low temperature growth and properties of Cu-In-Te based thin films for narrow bandgap solar cells

Cu-In-Te based thin films were grown onto soda-lime glass (SLG) substrates at 200 °C by co-evaporation using a molecular beam epitaxy system. The microstructural properties were examined by means of scanning electron microscopy, X-ray diffraction and Raman scattering. The crystalline quality of Cu-In-Te based thin films with high Cu/In ratios is superior to that of films with low Cu/In ratios. The films with Cu/In ratios of 0.69 ± 0.04 exhibited a single chalcopyrite phase with random orientation, whereas a defect chalcopyrite phase with a preferred (112) orientation was obtained for thin films with Cu/In ratios of 0.26 ± 0.02. However, the films with high Cu/In ratios of 0.69 ± 0.04 showed nearly constant low resistivity (∼ 10^− 2 Ω cm) at temperatures from 80 to 400 K due to high hole concentration (> 10¹⁹ cm^− 3), resulting in semi-metallic behavior. The hole conduction mechanism of the film (Cu/In atomic ratios = 0.26 ± 0.02) with semi-conductive properties was found to be variable-range-hopping of the Mott type in the wide range of 80-300 K. The optical bandgaps of Cu-In-Te based thin films are determined to be 0.93-1.02 eV at 300 K from transmission and reflection measurements. A solar cell with a ZnO/CdS/CuIn₃Te₅/Mo/SLG structure showed a total area (0.50 cm²) efficiency of 5.1% under AM1.5 illumination (100 mW/cm²) after light soaking. The conduction band offset at the CdS/CuIn₃Te₅ interface was estimated to be − 0.14 eV from X-ray photoelectron spectroscopy analysis.     

Improving conversion efficiency of dye-sensitized solar cells by metal plasma ion implantation of ruthenium ions

Dye-sensitized solar cells (DSSC) are based on the concept of photosensitization of wide-band-gap mesoporous oxide semiconductors. At present, DSSC have ventured into advanced development and pilot production. Our current research emphasizes on improvements on titanium dioxide (TiO₂) photosensitivity under visible light irradiation by using metal plasma ion implantation (MPII). The anatase TiO₂ electrode was prepared via a sol-gel process and deposited onto indium-tin oxide glass substrates. Subsequently, the as-deposited TiO₂ films were subjected to MPII at 20 keV in order to incorporate ruthenium (Ru) atoms onto the TiO₂ surface layer. The Ru-implanted TiO₂ thin film possessed nanocrystalline Ru clusters of 20 nm in diameter and distributed in near surface layer of TiO₂ films. The Ru clusters showed effective in both prohibiting electron-hole recombination and generating additional Ru-O impurity levels for the TiO₂ band gap structure. A significant reduction of TiO₂ band gap energy from 3.22 to 3.11 eV was achieved, which resulted in the extension of photocatalysis of TiO₂ from UV to Vis regime. A small drop of photoelectric performance of 8% was obtained due to the incorporation of Ru atoms in the surface layer of TiO₂, a similar side effect as observed in the Fe-implanted TiO₂. However, the overall retention of the photocatalysis capability is as high as 92% when switch from UV to Vis irradiation. The improvement of the photosensitivity of TiO₂ DSSC by means of metal plasma ion implantation is promising.     

Development of CZTS-based thin film solar cells

The low cost, environmental harmless Cu₂ZnSnS₄ (CZTS)-based thin film solar cells are fabricated by using abundant materials. The CZTS film possesses promising characteristic optical properties; band-gap energy of about 1.5 eV and large absorption coefficient in the order of 10⁴ cm^− 1. All constituents of this CZTS film, which are abundant in the crust of the earth, are non-toxic. Therefore, if we can use CZTS film practically as the absorber of solar cells, we will be free from both of the resource saving problem and the environmental pollution.In our CZTS project, CZTS absorber films were prepared by two independent techniques. One is three rf sources co-sputtering followed by annealing in sulfurized atmosphere. The latest conversion efficiency of over 6.7% was achieved by this technique. The other is co-evaporation technique. CZTS films were grown on Si (100) by vacuum co-evaporation using elemental Cu, Sn, S and binary ZnS as sources. XRD patterns indicated that the polycrystalline growth was suppressed and the orientational growth was relatively induced in a film grown at higher temperatures.In this presentation, the development of CZTS-based thin film solar cells will be surveyed.     

Effect of copper-deficiency on multi-stage co-evaporated Cu(In,Ga)S2 absorber layers and solar cells

Solar cell absorber films of Cu(In,Ga)S₂ have been fabricated by multi-stage co-evaporation resulting in compositional ratios [Cu]/([In] + [Ga]) = 0.93-0.99 and [Ga]/([In] + [Ga]) = 0.15. Intentional doping is provided by sodium supplied from NaF precursor layers of different thicknesses. Phases, structure and morphology of the resulting films are investigated by X-ray diffraction (XRD) and scanning electron microscopy. The XRD patterns show CuIn₅S₈ thiospinel formation predominantly at the surface in order to accommodate decreasing Cu content. Correlated with the CuIn₅S₈ formation, a Ga-enrichment of the chalcopyrite phase is seen at the surface. Since no CuS layer is present on the as-deposited films, functioning solar cells with CdS buffer and ZnO window layers were fabricated without KCN etch. The open-circuit voltage of solar cells correlates with the copper content and with the amount of sodium supplied. The highest efficiency cell (open-circuit voltage 738 mV, short-circuit current 19.3 mA/cm², fill factor 65%, efficiency 9.3%) is based on the absorber with the least Cu deficiency, [Cu]/([In] + [Ga]) = 0.99. The activation energy of the diode saturation current density of such a cell is extracted from temperature- and illumination-dependent current-voltage measurements. A value of 1.04 eV, less than the band gap, suggests the heterojunction interface as the dominant recombination zone, just as in cells based on Cu-rich grown Cu(In,Ga)S₂.     

Rapid thermal melted TiO2 nano-particles into ZnO nano-rod and its application for dye sensitized solar cells

TiO₂ nano-particles with an anchored ZnO nano-rod structure were synthesized using the hydrothermal method to grow ZnO nano-rods and coated TiO₂ nano-particles on ZnO nano-rods using the rapid thermal annealing method on ITO conducting glass pre-coated with nano porous TiO₂ film. The XRD study showed that there was little difference in crystal composition for various types of TiO₂ nano-particles anchored to ZnO nano-rods. The as-prepared architecture was characterized using field-emission scanning electron microscopy (FE-SEM). Films with TiO₂ nano-particles anchored to ZnO nano-rods were used as electrode materials to fabricate dye sensitized solar cells (DSSCs). The best solar energy conversion efficiency of 2.397% was obtained by modified electrode material, under AM 1.5 illumination, achieved up to J_sc = 15.382 mA/cm², V_oc = 0.479 V and fill factor = 32.8%.     

Thin film solar cells based on the ternary compound Cu2SnS3

Alongside with Cu₂ZnSnS₄ and SnS, the p-type semiconductor Cu₂SnS₃ also consists of only Earth abundant and low-cost elements and shows comparable opto-electronic properties, with respect to Cu₂ZnSnS₄ and SnS, making it a promising candidate for photovoltaic applications of the future. In this work, the ternary compound has been produced via the annealing of an electrodeposited precursor in a sulfur and tin sulfide environment. The obtained absorber layer has been structurally investigated by X-ray diffraction and results indicate the crystal structure to be monoclinic. Its optical properties have been measured via photoluminescence, where an asymmetric peak at 0.95 eV has been found. The evaluation of the photoluminescence spectrum indicates a band gap of 0.93 eV which agrees well with the results from the external quantum efficiency. Furthermore, this semiconductor layer has been processed into a photovoltaic device with a power conversion efficiency of 0.54%, a short circuit current of 17.1 mA/cm², an open circuit voltage of 104 mV hampered by a small shunt resistance, a fill factor of 30.4%, and a maximal external quantum efficiency of just less than 60%. In addition, the potential of this Cu₂SnS₃ absorber layer for photovoltaic applications is discussed.     

Charge recombination reduction in dye-sensitized solar cells by depositing ultrapure TiO2 nanoparticles on “inert” BaTiO3 films

Ultrapure TiO₂ nanoparticles (∼5 nm in size) were supported on “inert” BaTiO₃ films by TiCl₄ treatment, which was used to fabricate dye-sensitized solar cells (DSSCs). The optimized electrode, designated as BaTiO₃/TiO₂(4), was obtained upon four cycles of TiCl₄ treatment. DSSC with BaTiO₃/TiO₂(4) electrode exhibits superior power conversion efficiency (PCE) compared to that with conventional anatase TiO₂ (∼25 nm in size) electrode. The interfacial charge recombination kinetics was investigated by electrochemical impedance spectroscopy (EIS) and intensity-modulated photocurrent/photovoltage spectroscopy (IMPS/IMVS). In contrast to DSSC with anatase TiO₂ electrode, the dramatically enhanced electron lifetime for DSSC with BaTiO₃/TiO₂(4) electrode could be attributed to the decrease of recombination reaction at the TiO₂ photoelectrode/electrolyte interface. It is proposed that the lower interfacial charge recombination can be related to the relatively shallower trap distributions in DSSC with BaTiO₃/TiO₂(4) electrode.     

Transfer of CuInS2 thin film by lift-off process and application to superstrate-type thin-film solar cells

Transfer of a CuInS₂ thin film grown on a Mo/soda-lime glass substrate was investigated using a lift-off process. The CuInS₂ thin film was flatly exfoliated, with preferential peeling occurring in the CuInS₂/MoS₂ interface vicinity. This suggests that the interfacial MoS₂ layer behaves as a sacrificial layer. The lift-off process was also applied to solar cell fabrication. A superstrate-type CuInS₂ thin-film solar cell was fabricated and exhibited no significant degradation of conversion efficiency compared with a substrate-type CuInS₂ thin-film solar cell. The lift-off process could therefore also be applied to fabricate the upper part of a tandem solar cell structure.     

Polymer solar cells with a TiO2:Ag layer

Photovoltaic (PV) polymer solar cells with Ag and titanium dioxide were fabricated to improve the PV performance by increasing the amount of Ag in TiO₂ (by 3, 5, 7, and 10%). Sol–gel method was used to obtain amorphous or crystalline form of titanium dioxide layers. The solar cells with poly(3-hexylthiophene) and [6,6]-phenyl-C61-butyric acid methyl ester active layer in two various positions of titanium dioxide in device were tested. Higher PV performance was received by introducing TiO₂ with 5% of Ag between ITO and PEDOT:PSS in device and by heating the layer at 130 °C. The viscosity of applied PEDOT:PSS strongly influences the values of power conversion efficiency of the constructed polymer devices with titanium dioxide.     

High transparent sol-gel derived nanostructured TiO2 thin film

In this investigation, high transparent nanostructured TiO₂ thin film has been prepared by a dip-coating method. The prepared sol was obtained through the hydrolysis of titanium isopropoxide under the selected pH. The transmission of film as an optical parameter was characterized by spectrophotometer. With respect to other experimental results, a high transmission spectrum without any fluctuation in visible wavelength region has been recorded. According to transmission spectrum of film the refractive index and extinction coefficient has been determined. Experimental result has shown that the prepared film has high transmission and good optical parameters. SEM and AFM have been applied for morphology characterization of the film surface.     

Mesoporous TiO2 thin films embedded with Au nanoparticles for the enhancement of the photocatalytic properties

Mesoporous TiO₂ thin films were prepared by hydrothermal-oxidation of titanium metal thin films, which were obtained by DC magnetron sputtering technique. Gold nanoparticles, which were prepared by reduction of HAuCl₄, were embedded into the holes of the mesoporous TiO₂ films by capillary method followed by annealing in air up to 400 °C. The size of pore of TiO₂ films is about 100 nm and that of Au nanoparticles is about 10 nm in average. The morphology of the films was analyzed by field emission scanning electron microscope (FE-SEM) and scanning probe microscopes (SPMs). Subsequently, the photocatalytic performances of the obtained nanosystems in the decomposition of methylene blue solution are discussed. The obtained results show that the dispersion of Au nanoparticles on the mesoporous TiO2 matrix will help enhancing the photocatalytic activity with respect to pure TiO₂ under visible light irradiation.     

Influence of gas flow during vacuum cold spraying of nano-porous TiO2 film by using strengthened nanostructured powder on performance of dye-sensitized solar cell

Nano-porous TiO₂ films, which can be applied to the flexible dye-sensitized solar cell (DSC), were deposited by vacuum cold spraying at room temperature with the strengthened nanostructured TiO₂ powder as feedstock. The spraying was conducted under different accelerating gas flows resulting in various particle velocities. Results show that the short-circuit photocurrent density of the cell (N719 dye) increases from 8.3 to 9.8 mA/cm² with the increase in gas flow from 3 to 7.5 L/min. A maximum overall energy conversion efficiency of 4.2% was obtained for the DSC with the TiO₂ film deposited at the gas flow of 7.5 L/min. The influence of particle velocity on the electron transport parameters and cell performance was discussed to reveal the important role of particle velocity in the formation of particle connection through high impact pressure during vacuum cold spraying.     

The role of the TiO2 nanotube array morphologies in the dye-sensitized solar cells

Arrays of TiO₂ nanotubes were fabricated by the anodization of Ti foils and then used in assembling dye-sensitized solar cells (DSSCs). The role of the morphologies of the TiO₂ nanotubes in the photovoltaic performances of the DSSCs was studied in terms of the surface topography and the tube length. The necessity of removing the nanoporous films from the surface of the nanotube arrays for good DSSC performance has been demonstrated. Also, it has been shown that appropriately increasing the tube length was an effective measure for enhancing both the short-circuit current density and the conversion efficiency of the DSSCs.     

Sputter deposition and surface treatment of TiO2 films for dye-sensitized solar cells using reactive RF plasma

Sputter deposition followed by surface treatment was studied using reactive RF plasma as a method for preparing titanium oxide (TiO₂) films on indium tin oxide (ITO) coated glass substrate for dye-sensitized solar cells (DSCs). Anatase structure TiO₂ films deposited by reactive RF magnetron sputtering under the conditions of Ar/O₂(5%) mixtures, RF power of 600 W and substrate temperature of 400 °C were surface-treated by inductive coupled plasma (ICP) with Ar/O₂ mixtures at substrate temperature of 400 °C, and thus the films were applied to the DSCs. The TiO₂ films made on these experimental bases exhibited the BET specific surface area of 95 m²/g, the pore volume of 0.3 cm²/g and the TEM particle size of ∼ 25 nm. The DSCs made of this TiO₂ material exhibited an energy conversion efficiency of about 2.25% at 100 mW/cm² light intensity.