Surface acoustic wave properties of proton-exchanged LiNbO3 waveguides with SiO2 film

Surface acoustic wave (SAW) properties of proton-exchanged (PE) z-cut lithium niobate (LiNbO3) waveguides with silicon dioxide (SiO2) film layers were investigated using octanoic acid. The distribution of hydrogen measured by secondary ion mass spectrometry (SIMS) showed a step-like profile, which was assumed to be equal to the waveguide depth (d). The SiO2 film was deposited on z-cut LiNbO3 waveguide by radio frequency (rf) magnetron sputtering. We investigated the important parameters for the design of SAW devices such as phase velocity (Vp), insertion loss (IL) and temperature coefficient of frequency (TCF) by a network analyzer using thin-film aluminum interdigital transducer electrodes on the upper SiO2 film surface. The experimental results showed that the Vp of SAW decreased slightly with the increase of h/lambda, where h was the thickness of SiO2 films and lambda was the wavelength. The IL of SAW increased with increased h/lambda. The TCF of SAW calculated from the frequency change of the output of SAW delay line showed an evident decrease with the increase of h/lambda. The TCF for PE z-cut LiNbO3 was measured to be about -54.72 ppm/degreees C at h/lambda = 0.08. It revealed that the SiO2 films could compensate and improve the temperature stability as compared with the TCF of SAW on PE samples without SiO2 film.     

Ge/SiO2和Ge/ZnO/SiO2薄膜的磁控溅射制备及电学性能

采用射频磁控溅射方法以石英玻璃为衬底分别沉积制备出了Ge/SiO2和Ge/ZnO/SiO2薄膜。X射线衍射表明薄膜展示了明显的ZnO衍射峰和较弱的Ge衍射峰;傅里叶变换红外光谱曲线证明薄膜均具有各自的特征吸收峰;扫描电镜结果显示薄膜为颗粒状团簇结构,并且加入ZnO中间层可以有效的改善Ge层的质量。同时,对所得薄膜材料的电流-电压性能进行了研究,结果发现,Ge/SiO2薄膜的I-V曲线拟合后为斜线,相当于电阻;ZnO/SiO2薄膜为直线,可以认为是绝缘体;Ge/ZnO/SiO2薄膜在-10～10V之间电流电压呈线性关系,其电阻比Ge/SiO2薄膜小,当电压值超过15V之后,电流急剧增加而迅速使薄膜击穿,薄膜导通。     

ZnO/SiO2复合薄膜的制备及其阻隔性能研究

目的为了进一步提高氧化锌(ZnO)沉积复合薄膜对氧气的阻隔能力,探索其应用于食品和药品包装材料的可行性。方法采用射频磁控溅射技术(RF),以ZnO和二氧化硅(SiO2)为靶材,在PET塑料表面同时沉积,制备ZnO/SiO2复合薄膜包装材料,并详细分析SiO2的引入对ZnO沉积膜微观结构和阻隔能力的影响,优化ZnO/SiO2的制备工艺。结果SiO2的引入,使ZnO纳米颗粒的形状由片状燕麦变成了球形,当功率密度比PSiO2/PZnO为0.67,氩气流量为20 mL/min,沉积时间为20 min,工作气压为0.5 Pa时,ZnO/SiO2复合薄膜的氧气透过率降低为0.462 mL/(m^2·d),水蒸气透过率有所增加,为0.367 g/(m^2·d)。结论引入合适比例的SiO2,可有效提升ZnO沉积层对氧气渗入的阻隔能力,但SiO2引入量过高时,会加剧纳米裂纹,对复合薄膜的阻隔能力不利。     

Simulation of characteristics of a SiO2/c-axis-oriented LiNbO3/diamond surface acoustic wave

High-frequency surface acoustic wave (SAW) devices based on diamond that have been realized to date utilize c-axis-oriented ZnO as the piezoelectric thin film. This material, with SiO2 overlay, shows excellent characteristics of a high phase velocity of over 10,000 m/s and a zero temperature coefficient, and it has been successfully applied to high-frequency SAW filters and resonators. To expand on materials used on diamond, the theoretical calculation has been carried out for LiNbO3/diamond, and a high electromechanical coupling coefficient up to 9.0% is expected. In this work, the characteristics of SiO2/LiNbO3/diamond were studied by computer simulation, emphasizing a zero temperature coefficient with a high coupling coefficient. Calculations are carried out for the phase velocity, the electromechanical coupling coefficient, and the temperature coefficient of the Rayleigh wave and its higher mode Sezawa wave. As a result, SiO2/IDT/LiNbO3/diamond is found to offer a zero temperature coefficient with a very high coupling coefficient up to 10.1% in conjunction with a high phase velocity of 12,100 m/s.     

Optical properties of electrochemically deposited ZnO thin films on colloidal crystal film of SiO2 microspheres

The optical properties of electrochemically deposited ZnO thin films on colloidal crystal film of SiO2 microspheres structures were studied. Colloidal crystal film of SiO2 microspheres were self-assembled by evaporation using SiO2 in solution at a constant 0.1 wt%. ZnO in thin films was then electrochemically deposited on to colloidal crystal film of SiO2 microspheres. During electrochemical deposition, the content of Zn(NO3)2 x 6H2O in solution was 5 wt%, and the process's conditions were varied between of 2-4 V and 30-120 s at room temperature, with subsequent heat-treatment between 200 and 400 degrees C. A smooth surface and uniform thickness of 1.8 microm were obtained at 3 V for 90 s. The highest PL peak intensity was obtained in the ZnO thin film heat-treated at 400 degrees C. The double layered ZnO/SiO2 colloidal crystals showed clearly better emission properties than the SiO2/ZnO and ZnO structures.     

氧化锌/二氧化硅复合膜的结构色研究

采用静电自组装技术,以氧化锌（ZnO）和二氧化硅（SiO2）溶胶颗粒为前驱体,通过控制双组分膜层的不同厚度,制备出结构色鲜艳的ZnO/SiO2复合膜,并利用分光测色仪、多角度分光光度仪及扫描电子显微镜等研究复合膜的颜色、微观结构和形态特征。研究结果发现,ZnO/SiO2复合膜的亮度和色度均较单一组分薄膜的高,复合薄膜的颜色仍随厚度和观察角度的变化而变化。通过对薄膜的微观结构分析,结合其厚度随周期数的变化规律,发现复合薄膜的厚度随着自组装循环次数的增加而增加,薄膜中的纳米粒子并没有形成明显的高低折射率交替分布的双层结构,可能形成的是高折射率层（H层）、有效折射率层（eff层）和低折射率层（L层）的多层微观结构。这种特殊的多层结构与光作用发生干涉,形成了鲜亮度和饱和度更高的结构色。     

Ultra temperature-stable bulk-acoustic-wave resonators with SiO2 compensation layer

This paper describes temperature compensated bulk acoustic-wave resonators (BAR) with temperature coefficient of frequency (TCF) less than 1 ppm/degrees C at above 3 GHz. The temperature compensation is produced from the unique physical property of silicon dioxide's positive TCF, unlike most other materials that have negative TCF. Two types of resonators have been explored: film bulk acoustic resonator (FBAR) composed of Al/ZnO/Al/SiO2 on a surface micromachined cantilever that is released by XeF2 vapor etching and high-overtone acoustic resonator (HBAR) composed of an Al/ZnO/Al resonator on a bulk micromachined SiO2/Si/SiO2 supporting substrate.     

Suppression of transverse-mode spurious responses for SAW resonators on SiO2/Al/LiNbO3 structure by selective removal of SiO2

A SiO(2)/Al/LiNbO(3) structure has a large electromechanical coupling factor (K(2)) and good temperature coefficient of frequency (TCF) for applications as a SAW duplexer of the Universal Mobile Telecommunications System (UMTS) Band I. However, the SiO(2)/Al/LiNbO(3) structure also supports two unwanted spurious responses; one is caused by the Rayleigh mode and the other by the transverse mode. As the authors have previously discussed, the Rayleigh-mode spurious response can be suppressed by controlling the cross-sectional shape of a SiO(2) overlay deposited on resonator electrodes. In this paper, a new technique to suppress the transverse-mode spurious responses is proposed. In the technique, the SiO(2) overlay is selectively removed from the dummy electrode region. The spurious responses are analyzed by the laser probe system. The results indicate that the spurious responses in question were hybrid modes caused by the coupling between the main (SH) SAW and another (Rayleigh) SAW with different velocities. The hybrid-mode spurious behavior was dependent on the velocities in the IDT and the dummy regions (v(i) and v(d)). The hybrid-mode spurious responses could be suppressed by selectively removing SiO(2). Furthermore, the SAW energy confinement could be enhanced in the IDT electrode region when v(i) < v(d). The transverse-mode spurious responses were successfully suppressed without degrading the SAW resonator performances.     

Analysis of frequency response of IDT/ZnO/Si SAW filter using the coupling of modes model

A monolithic integration of filters on Si or GaAs substrates is highly desirable to miniaturize the outer dimensions of the cellular phones. But, direct monolithic integration of surface acoustic wave (SAW) filters is impossible with Si, which is nonpiezoelectric, and difficult with GaAs, which is weakly piezoelectric. One alternative is the deposition of a piezoelectric film on the semiconductor substrate. In this paper, we propose a modified coupling-of-modes (COM) approach, which can be used in the practical design of a layered ZnO/Si SAW filter. This is a dispersive SAW-layered filter, and some of the COM parameters become frequency dependent due to the phase velocity dispersion. The frequency response of the 3-step ladder type ZnO/Si SAW filter is analyzed and compared with the experimental results.     

Tribological and Repairing Properties of Combined Nanoparticle SiO2/ZnO

A type of additive-SiO2/ZnO combined nanoparticle were obtained by chemical method. The tribologica land repairing properties as lube additives have been studied by four-ball tester and ring-on-block tribotesters. The morphographies of the worn surfaces were analyzed by means of scanning electron microscopy(SEM). The results show that the additive possesses excellent extreme-pressure( EP), anti-wear(AW) , friction reducion and self-repairing properties. The lubrication and repairing mechanism is inferred that SiO2/ZnO combined nanoparticle is sedimented on the surface of steel, the lower surface film is formed under the high temperature and high pressure. The film possess excellent anti-wear , friction-reducing and repairing properties.     

ZnO films on {001}-cut <110>-propagating GaAs substrates forsurface acoustic wave device applications

A potential application for piezoelectric films on GaAs substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the layered structure is critical for the optimum and accurate design of such devices. The acoustic properties of ZnO films sputtered on {001}-cut 〈110〉-propagating GaAs substrates are investigated in this article, including SAW velocity, effective piezoelectric coupling constant, propagation loss, diffraction, velocity surface, and reflectivity of shorted and open metallic gratings. The measurements of these essential SAW properties for the frequency range between 180 and 360 MHz have been performed using a knife-edge laser probe for film thicknesses over the range of 1.6-4 μm and with films of different grain sizes. The high quality of dc triode sputtered films was observed as evidenced by high K² and low attenuation. The measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metalized ZnO on SiO₂ or Si₃N₄ on {001}-cut GaAs samples are reported using two different techniques: 1) knife-edge laser probe, 2) line-focus-beam scanning acoustic microscope. It was found that near the 〈110〉 propagation direction, the focusing SAW property of the bare GaAs changes into a nonfocusing one for the layered structure, but a reversed phenomenon exists near the 〈100〉 direction. Furthermore, to some extent the diffraction of the substrate can be controlled with the film thickness. The reflectivity of shorted and open gratings are also analyzed and measured. Zero reflectivity is observed for a shorted grating. There is good agreement between the measured data and theoretical values     

DNA immobilization and SAW response in ZnO nanotips grown on LiNbO3 substrates.

DNA immobilization enhancement is demonstrated in a structure consisting of ZnO nanotips on 128 degrees Y-cut LiNbO3. The ZnO nanotips are grown by metalorganic chemical vapor deposition (MOCVD) on the top of a SiO2 layer that is deposited and patterned on the LiNbO3 SAW delay path. The effects of ZnO nanotips on the SAW response are investigated. X-ray diffraction and scanning electron microscopy are used to analyze the ZnO nanotips, which are of single crystalline quality, and they are uniformly aligned with their c-axis perpendicular to the substrate surface. The photoluminescence (PL) spectrum of the ZnO nanotips shows strong near bandedge transition with insignificant deep level emission, confirming their good optical property. DNA immobilization enhancement is experimentally validated by radioactive labeling tests and SAW response changes. The ZnO nanotips enhance the DNA immobilization by a factor of 200 compared to ZnO film with flat surface. DNA hybridization with complementary and noncomplementary second strand DNA oligonucleotides is used to study the selective binding of the structure. This device structure possesses the advantages of both traditional SAW sensors and ZnO nanostructures.     

DNA immobilization and SAW response in ZnO nanotips grown on LiNbO/sub 3/ substrates

DNA immobilization enhancement is demonstrated in a structure consisting of ZnO nanotips on 128/spl deg/ Y-cut LiNbO/sub 3/.The ZnO nanotips are grown by metal-organic chemical vapor deposition (MOCVD) on the top of a SiO/sub 2/ layer that is deposited and patterned on the LiNbO/sub 3/ SAW delay path. The effects of ZnO nanotips on the SAW response are investigated. X-ray diffraction and scanning electron microscopy are used to analyze the ZnO nanotips, which are of single crystalline quality, and they are uniformly aligned with their c-axis perpendicular to the substrate surface. The photoluminescence (PL) spectrum of the ZnO nanotips shows strong near bandedge transition with insignificant deep level emission, confirming their good optical property. DNA immobilization enhancement is experimentally validated by radioactive labeling tests and SAW response changes. The ZnO nanotips enhance the DNA immobilization by a factor of 200 compared to ZnO film with flat surface. DNA hybridization with complementary and noncomplementary second strand DNA oligonucleotides is used to study the selective binding of the structure. This device structure possesses the advantages of both traditional SAW sensors and ZnO nanostructures.     

Enhanced emissions of Eu(3+) by energy transfer from ZnO quantum dots embedded in SiO(2) glass

SiO(2):Eu(3+) based bulk composites containing ZnO quantum dots were synthesized by an in situ sol-gel process. The quantum dots homogeneously distributed among the SiO(2) glass matrix exhibited a broad ultraviolet emission band centered at 385?nm. The ZnO ultraviolet luminescence intensity decreased monotonically with increasing Eu(3+) doping concentration, while the Eu(3+) visible emission was intensified significantly by the precipitation of ZnO quantum dots, ascribed to the energy transfer from ZnO to Eu(3+). The Eu(3+) luminescence at 612?nm for the sample with 20?mol% ZnO was about ten times stronger than that for the sample without ZnO. The influence of ZnO or Eu(3+) concentration on the energy transfer process is discussed.     

水浸腐蚀对SiO_2/Ag/SiO_2复合膜光学特性的影响

用蒸镀法制备了SiO2 Ag SiO2 复合膜 ,探讨了水浸腐蚀和薄膜厚度对该复合膜光学特性的影响。试验结果表明 :适当增加复合膜中SiO2 膜层的厚度不但可以提高SiO2 Ag SiO2 复合膜可见光的透光率 ,而且可以相对有效地防止复合膜进一步被氧化 ,提高SiO2 Ag SiO2 复合膜的抗水浸腐蚀性能     

ZnO nanowire co-growth on SiO2 and C by carbothermal reduction and vapour advection

Vertically aligned ZnO nanowires (NWs) were grown on Au-nanocluster-seeded amorphous SiO(2) films by the advective transport and deposition of Zn vapours obtained from the carbothermal reaction of graphite and ZnO powders. Both the NW volume and visible-to-UV photoluminescence ratio were found to be strong functions of, and hence could be tailored by, the (ZnO+C) source-SiO(2) substrate distance. We observe C flakes on the ZnO NWs/SiO(2) substrates which exhibit short NWs that developed on both sides. The SiO(2) and C substrates/NW interfaces were studied in detail to determine growth mechanisms. NWs on Au-seeded SiO(2) were promoted by a rough ZnO seed layer whose formation was catalysed by the Au clusters. In contrast, NWs grew without any seed on C. A correlation comprising three orders of magnitude between the visible-to-UV photoluminescence intensity ratio and the NW volume is found, which results from a characteristic Zn partial pressure profile that fixes both O deficiency defect concentration and growth rate.     

SiO2/聚（3-羟基丁酸酯-co-4-羟基丁酸酯）薄膜研究

目的研究纳米SiO2对可生物降解聚(3-羟基丁酸酯-co-4-羟基丁酸酯)(P34HB)包装膜结晶行为和力学性能的影响。方法采用溶液浇铸法制备SiO_2/P34HB纳米复合薄膜,利用红外光谱仪(FTIR)、扫描电镜(SEM)、正置热台显微镜(POM)、差示扫描量热仪(DSC)和万能力学试验机等研究纳米SiO_2对P34HB结构、结晶性和力学性能等的影响。结果纳米SiO_2在P34HB中起到异相成核的作用,SiO2/P34HB复合膜的结晶速率和结晶度得到明显改善。相比P34HB包装膜,当纳米SiO_2质量分数为2%时,SiO_2/P34HB复合膜的弹性模量和拉伸强度分别提高了72.7%和60.9%。结论获得了纳米SiO2改善可生物降解聚(3-羟基丁酸酯-co-4-羟基丁酸酯)包装膜结晶度和力学性能的最佳掺杂比例参数。     

低电压驱动微流控芯片二氧化硅绝缘薄膜的研究

采用电子束蒸发法在玻璃基底上制备了二氧化硅薄膜,利用原子力显微镜(AFM)、台阶仪、X射线衍射仪(XRD),分别对不同条件下制备的二氧化硅薄膜的表面形貌、膜厚、结构进行了表征,并采用金属/绝缘膜/金属(MIM)结构对薄膜的I-V电学特性进行了分析。结果表明玻璃基底温度在300℃条件下生长的4μm厚度的二氧化硅薄膜,其表面均匀平整,耐压能力>200V,能够承受500kV/cm以上的场强,满足作为低电压驱动微流控芯片绝缘薄膜的要求,并在样品驱动的应用中得到验证。     

Propagation of boundary acoustic waves along a ZnO layer between two materials

Theoretical and experimental results on boundary acoustic waves propagated along a ZnO layer sandwiched between two materials are presented. It is shown that boundary acoustic waves can exist only when the material constants of the three materials satisfy the particular conditions obtained here. Experiments on SiO(2)/ZnO/SiO(2 ) were performed to verify the theoretical prediction of the existence of boundary waves. Boundary waves were excited and received by interdigital transducers and propagated along the ZnO layer. Propagation loss was practically the same as for Rayleigh waves, indicating a proper mode of the system. The results suggest that future SAW (surface acoustic wave) devices can be made without any package.     

TiNx/SiO2/Ag/SiO2低辐射膜耐H2S气体的腐蚀性能

为了提高玻璃片上SiO2/Ag/SiO2复合膜的耐腐蚀性能,用磁控溅射法在其上制备了TiNx薄膜.采用X射线衍射(XRD)、扫描隧道显微镜(STM)研究了TiNx薄膜的结构及表面形貌;参照GB/T 5137.3-2002电子产品硫化氢腐蚀的检验方法研究了TiNx/SiO2/Ag/SiO2低辐射膜耐H2S气体的腐蚀性能....