卫星间光通信技术

介绍了卫星间激光通信系统的构成,分析与比较了星间非相干的IM/DD系统和相干光通信系统的性能.指出对于同步卫星间这种超长距离的光通信系统,高的接收灵敏度是至关重要的,因而相干光通信技术更有优势;但对于中低轨道卫星光通信系统,由于多普勒效应的影响,采用IM/DD技术更为恰当.     

基于Nyquist脉冲副载波调制的短距离光纤传输技术研究

提出了一种适用于强度调制直接检测(IM/DD) 光系统的信号调制格式。这种基于Nyquist脉冲half cycle副载波调制(SCM)信号能有效提高频谱效率,为了减少传递函数引起的系统的性能 恶化,采 用了数字预均衡和后均衡实现对光纤损伤的补偿;建立了偏振复用(PDM)IM/DD系统 平台, 分析了Nyquist脉冲SCM信号在系统中的PAPR性能,实现了72Gbit/s 64-QAM N yquist脉冲SCM信号经过20km标准单模光纤(SMF)传输后其误码性能 小于前向纠错(FEC)阀值3．8×10－3。     

光OFDM系统中调制器最优偏置的研究

理论分析了强度调制直接检测双边带光正交频分复用系统(IM/DD DSB-00FDM)中电光调制器与光电探测器共同作用产生的非线性干扰.针对不同调制指数,通过改善电光调制器直流偏置,减轻非线性噪声的影响,实现IM/DD DSB-00FDM传输系统性能最优化.仿真结果表明,在调制指数较小时,较高的偏置电压可以在很大程度上改善系统的传输性能,提高接收机的灵敏度.     

一种基于大功率LED照明灯的可见光通信系统

基于强度调制及直接检测(IM/DD)原理,利用18×1 W大功率白光LED照明灯,以开关键控和二进制非归零码(OOK-NRZ)调制方式实现了可见光通信(VLC)系统的室内单向下行通信.为优化LED光源的布局,对光链路视线(LOS)信道损耗进行了理论分析,对LED光源建模并进行光线追迹仿真.系统采用基于TCP/IP的VL...     

Gamma Gamma强海洋湍流下无线光通信系统的平均容量研究

建立了一个采用强度调制/直接检测(intensity modulation/direct detection,IM/DD)和开关键控(on-off keying,OOK)的水下无线光通信(Underwater wireless optical communication,UWOC)系统,通过采用 Gamma Gamma...     

一种基于相关峰统计特征的光纤以太网设备指纹识别系统

针对光纤以太网设备在访问认证中存在安全隐患的问题,首次提出了一种基于相关峰的光纤以太网设备物理指纹提取方法,设计了一个由24个光纤以太网器件组成的强度调制/直接检测(Intensity Modulation/Direct Detection,IM/DD)实验系统。采用一种适应环境条件的混合自适应分类方案,通过进行大量的实验来优化参数设置,并与基于经典统计特征的方法进行了比较。实验结果表明,在0 dB和20 dB的信噪比下,设计的系统分类精度可以达到85.76%和91.11%,显著优于基于经典统计特征的方法。     

突破OCDMA时间域编码的局限性

对于采用时间域编码的光码分复用 (OCDMA)系统而言 ,多址干扰 (OMAl)问题是严重影响系统误码率和同时用户数的主要原因。针对引起强度调制 /直接检测 (IM/DD)光通信系统 OMAI的原因 ,讨论了通过改良码系和检测技术来改善系统性能的方法 ,提出了多脉冲检测方案 ;通过扩展到光域的 Shannon公式 ,简要讨论了时间域以外的编码方法并分析了可能存在的问题 ,提出并讨论了一种通过时分 /波分相结合利用 M系列码的方案 ,指出这种通过码系数学变换在时间域利用电域成熟码系的编码方案是目前解决 OMAI等问题的一种有效出路     

星间相干光通信技术的发展历程与趋势

对星间相干光通信体制和IM/DD体制进行了对比分析,总结了相干体制应用于卫星光通信的优势。介绍了国内外星间相干光通信的研究历程、目前的技术水平和发展趋势。     

FSO通信系统接收性能的仿真研究

通过对自由空间光通信(FSO)系统组成原理的分析,利用OptiSystem光通信软件设计了FSO光传输链路仿真模型.在IM/DD调制方式下,结合眼图分析仪和误码率分析仪,对光链路接收性能进行分析,得到了很低的误码率,验证了无线光信号在较为恶劣天气下传输具有切实可行性.     

光纤通信技术与传输网的发展——第三讲 光纤通信新技术

传统的光纤通信系统采用单一波长的强度调制一直接检测(IM/DD)方式,经光—电—光转换对劣化的信号进行再生中继。随着光电子器件和系统技术的发展,出现了各种延长中继距离、扩大通信容量的新技术,这里主要介绍已实用化的直接光放大技术光波分复用技术和具有良好应用前景的外差式相干光通信技术。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.