An intrinsic luminescence in binary lead silicate glasses

The low-temperature photoluminescence (PL) of xPbO · (1 − x)SiO₂ glasses (x = 0.20-0.75) was studied at Т = 10 K. The recorded PL-spectra are a superposition of three spectral components with maxima located at 1.8 eV (identified as Pb 6p → metal-bridging O2p radiative electron transition, the “R”-band), 2.0 eV (Pb 6p → non-bridging O2p, the “O”-band) and 2.55 eV (Pb 6p → Pb 6s, the “B”-band), respectively. It was found the essential link for “R”, “O” and “B” PL-bands with chemical composition x of the glasses under study. These concentration dependences are expressed as mutual PL-intensity variations for each recorded luminescence band that allowed to determine their origin. The shape of established dependences well coincides with numerical data on NBO- and MBO-density of chemical bonding, reported previously.The overall PL-manner within the temperature range of 10-295 K is described by an empirical Street’s law. It was shown that experimental photoluminescence quenching curves may be precisely approximated as a superposition of Mott relationships for nonequivalent luminescence centers. The obtained distribution of PL-centers on the activation energy for luminescence quenching reflects the essential donation of the low-energy states into the overall PL-process. The width of this energy distribution affects by the type of PL-emission band and the disordering degree in the arrangement of local PL-centers of a certain kind.     

Preparation and properties of radio-frequency-sputtered half-Heusler films for use in solar cells

The class of half-Heusler compounds opens possibilities to find alternatives for II-VI or III-V compound semiconductors. We aim to find suitable substitutes for the cadmium sulphide buffer layer in chalcopyrite-based thin film solar cells, where the buffer layer is located between the p-type chalcopyrite absorber and an n-type transparent window layer. We report here the preparation of radio-frequency-sputtered lithium copper sulphide “LiCuS” and lithium zinc phosphide “LiZnP” films. The optical analysis of these films revealed band gaps between 1.8 and 2.5 eV, respectively. Chemical properties of the film surface and both interfaces between the film and a Cu(In,Ga)Se₂ layer and between the film and an (Zn,Mg)O layer were investigated by in-situ photoelectron spectroscopy. The valence band offsets to the Cu(In,Ga)Se₂ layer were estimated to be (0.4 ± 0.1) eV for “LiCuS”/Cu(In,Ga)Se₂ and (0.5 ± 0.8) eV for “LiZnP”/Cu(In,Ga)Se₂. This leads to positive conduction band offsets of > 1 eV. These rather large offsets are not compatible with efficient solar cell devices.Under atmospheric conditions “LiCuS” and “LiZnP” films show rapid decomposition.     

Microstructures and mechanical properties of heat-resistant HPDC Mg-4Al-based alloys containing cheap misch metal

Mg-4Al-xCe/La-0.3Mn (Ce/La: mixture of Ce and La, x = 1, 2, 4 and 6 wt.%) alloys were prepared by high-pressure die-casting. The microstructures, mechanical properties and thermal stability were investigated. The cross-section of test bar could be divided into the fine skin region and the relatively coarse interior region. Two binary Al-(Ce, La) phases with the former being the dominant one, Al₁₁(Ce, La)₃ and Al₂(Ce, La), are mainly distributed along the dendrite boundaries, and La prefers to exist in Al₁₁(Ce, La)₃. The alloy with 4 wt.% Ce/La exhibits high tensile properties and good heat resistance until 200 °C, which were mainly attributed to the fine dendritic arm spacing and the main strengthening phase Al₁₁(Ce, La)₃, which is present in high volume fraction, and possesses fine rod-like morphology, network or “orderly stack” distribution and good thermal stability. The results of this research provide a basis for further investigation of the new low cost high-pressure die-cast Mg-Al-RE alloys designed to serve at temperature up to 200 °C.     

In-situ magnetic deposition field effect on sheet resistance of Permalloy films

We have measured the real-time in-situ sheet resistance (R_□) of a Permalloy (Py) film during the film-growth period in a vacuum under various magnetic deposition-field (H) conditions: a longitudinal direct-current (dc) field (H = H_x), a transverse dc field (H = H_y), and a rotating field (H = H_r) with the frequency (f) at 0.6, 1.4, 2.5, 10, and 100 Hz, respectively. The results show that R_□(H_y) > R_□(H_x) ? R_□(H = 0) ? R_□(H = H_r), when Py film is just before or near the coalescence stage of the film-growth process. The reason for these phenomena is that a dc field (H = 0, H_x, or H_y) tends to make the structure of the film more anisotropic, while a rotating field (H = H_r) tends to make the film more isotropic. Moreover, based on the quantum tunneling mechanism, the fact that there will be many more tunneling events through which an electron can be transported down a piece-by-piece connected film with an anisotropic than with an isotropic structure should naturally lead to the observed results above. Finally, we also explain why in the R_□ versus f plot (under the condition of film thickness t_f = 1 nm), there exists a minimum R_□ at f = f_min = 2.5 Hz.     

Analytical model of thermal-stress induced cracking in two-component material with anisotropic components

This paper deals with an analytical model of cracking in an anisotropic matrix and anisotropic spherical particles with the radius R which are periodically distributed in the infinite matrix. This model multi-particle-matrix system with the particle volume fraction v ∈ 〈0, π/6〉 is applicable to a two-component material of the precipitate-matrix type with anisotropic components. The cracking which is induced by thermal stresses is investigated within a cubic cell with a central spherical particle. This cubic cell represents such infinite matrix part which is related to one particle. The analytical model of cracking in the spherical particle (q = p) and cell matrix (q = m) includes (1) an analytical determination of the critical particle radius R_qc = R_qc(v) which is a reason of a crack initiation; and (2) an analytical determination of the function f_q = f_q(x, v, R) with the variable x and the parameters v, R > R_qc. This function of the position x in the components describes a crack shape in such plane which is perpendicular to the cracking plane. The analytical determination is based on a curve integral of elastic energy density induced by the thermal stresses. As an illustrative application example, these analytical results are applied to the YBaCuO superconductor which represents a two-component material with the Y₂BaCuO₅ precipitates and the YBa₂Cu₃O₇ matrix.     

Studies on the dielectric and relaxor behavior of sol-gel derived barium strontium zirconate titanate thin films

The dielectric behavior of sol-gel derived Ba_0.80Sr_0.20(Zr_xTi_1−x)O₃ (0.0 ≤ x ≤ 0.50) thin films is studied. A relaxor behavior is observed for x ≥ 0.35. The degree of relaxation increases with Zr content. The frequency dependence of the polar regions follows Vogel-Fulcher relation with a characteristic cooperative freezing at freezing temperature (T_f). Below T_f, a long range polarization ordering is likely to take place. The plausible mechanism of the relaxor behavior of BSZT thin films with Zr contents ≥ 0.35 has been proposed based on the measured temperature as well as frequency dependent dielectric data. The solid solution system is visualized as a mixture of Ti^+ 4 rich polar regions and Zr^+ 4 rich regions; with the increase in Zr content the volume fraction of the polar regions is progressively reduced. At and above 35.0 at.% Zr substitution the polar regions exhibit typical relaxor behavior.     

Fracture behavior and mechanism of 2D C/SiC-BCx composite at room temperature

2D C/SiC composite was modified with partial BC_x matrix by low pressure chemical vapor infiltration technique (LPCVI), which was named as 2D C/SiC-BC_x composite. The flexural fracture behavior, mechanism, and strength distribution of 2D C/SiC-BC_x composite are investigated. The results indicate that the flexural strength, fracture toughness, and fracture work are 442.1 MPa, 22.84 MPa m^1/2, and 19.2 kJ m⁻², respectively. The flexural strength of C/SiC-BC_x composite decrease about 20% than that of C/SiC composite. However, the fracture toughness and fracture work increase about 19% and 18.5%, respectively. The properties varieties between C/SiC-BC_x composite and C/SiC composite can be attributed to the weak-bonding interface between BC_x/SiC matrices according to the results of detailed microstructure analysis. The strength distribution of 2D C/SiC-BC_x composite follows as Normal distribution or Weibull distribution with σ_u = 0, and m = 8.1393. The mean value of flexural strength for 2D C/SiC-BC_x composite is 443 MPa obtained by theory calculation, which is consistent with experiment result (442.1 MPa) very well.     

Microwave dielectric properties of La1−xBix(Mg0.5Sn0.5)O3 ceramics

The La_1−xBi_x(Mg_0.5Sn_0.5)O₃ ceramics were prepared by the conventional solid-state method with various sintering temperatures. The X-ray diffraction patterns of the La_0.97Bi_0.03(Mg_0.5Sn_0.5)O₃ ceramics revealed no significant variation of phase with sintering temperatures. An apparent density of 6.50 g cm⁻³, a dielectric constant (?_r) of 20.2, a quality factor (Q × f) of 58,100 GHz and a temperature coefficient of resonant frequency (τ_f) of −84.2 ppm °C⁻¹ were obtained for La_0.97Bi_0.03(Mg_0.5Sn_0.5)O₃ ceramics that were sintered at 1550 °C for 4 h.     

Effects of complex substitution of La and Nd for Bi on the microwave dielectric properties of BiNbO4 ceramics

La₂O₃ and Nd₂O₃ were used to substitute Bi₂O₃ and the effects of complex substitution on the sintering behavior and the microwave dielectric properties of BiNbO₄ ceramics were studied. With 0.5 wt.% CuO-V₂O₅ mixtures addition, all of the Bi_1−x(La_0.38Nd_0.62)_xNbO₄ ceramics could be densified below 920 °C. The triclinic phases are identified in Bi_1−x(La_0.38Nd_0.62)_xNbO₄ ceramics with x=0.01 sintered at 820 °C and the triclinic intensities increase with increasing the x value and sintering temperature. The saturated bulk density slightly decreases from 7.17 to 7.13 g/cm³ and the ε_r value from 44.24 to 42.76 with increasing x from 0 to 0.07 for Bi_1−x(La_0.38Nd_0.62)_xNbO₄ ceramics. The saturated Q×f value is between 10,300 and 12,400 GHz depending on the x value. The τ_f values of dense Bi_1−x(La_0.38Nd_0.62)_xNbO₄ ceramics decrease from 28.32 to 12.79 ppm/°C with x varying from 0 to 0.01 and remain almost unchanged with further increasing x.     

Structural aspects of adamantine like multinary chalcogenides

The present state of knowledge of structure, phase relations and metal ordering in 2(ZnX)_x(CuBX₂)_1 − x (B = Ga, In and X = S, Se, Te) and Cu₂Zn_xFe_1 − xSnS₄ multinary compounds is discussed. The chemical disorder process in 2(ZnX)_x(CuBX₂)_1 − x alloys leads to a phase separation, i.e. in a certain composition range (2-phase field) two phases, tetragonal domains and a cubic matrix, coexist. Its width depends on the three-valent cation only and is independent from the size of anion. In the subsolidus region of the 2(ZnX)_x(CuBX₂)_1 − x system the stability range of tetragonal mixed crystals as well as the miscibility gap is decreasing, the stability range of cubic mixed crystals is increasing. The process of structural disorder in 2(ZnX)_x(CuBX₂)_1 − x as well as Cu₂Fe_1 − xZn_xSnS₄ alloys is connected to the cation substructure. In tetragonal 2(ZnX)_x(CuInX₂)_1 − x alloys a non-random Zn distribution on the both cation positions of the chalcopyrite-type structure was revealed, whereas a random distribution of Zn and Cu on two different sites of the kesterite type structure was obtained in Cu₂ZnSnS₄ in contradiction to literature. The crossover from stannite (x = 0) to kesterite (x = 1) in Cu₂Fe_1 − xZn_xSnS₄ is considered as a three-stage process of cation restructure involving Cu⁺, Zn²⁺ and Fe²⁺, whereas Sn⁴⁺ does not take part in this process. In tetragonal 2(ZnX)_x(CuInX₂)_1 − x alloys the anion displacement is decreasing with increasing ZnX content in CuInX₂ indicating a decreasing tetragonal distortion. Here the disorder process in the cation substructure and the displacement process in the anion substructure are coupled.     

Dielectric properties of (1 − x)(Mg0.95Zn0.05)TiO3-x(Na0.5Nd0.5)TiO3 ceramic system at microwave frequencies

Ceramics in the system (1 − x)(Mg_0.95Zn_0.05)TiO₃-x(Na_0.5Nd_0.5)TiO₃ were prepared by the conventional mixed oxide route. It shows a two-phase system of an ilmenite structured (Mg_0.95Zn_0.05)TiO₃ and a perovskite structured (Na_0.5Nd_0.5)TiO₃, which were confirmed by XRD and EDX. In addition, (Mg_0.95Zn_0.05)Ti₂O₅ was identified as a second phase. It was also responsible for a rapid drop in the Q × f value. The temperature coefficient of resonant frequency was a function of compositional ratio. Specimen with x = 0.16 possessed an excellent combination of microwave dielectric properties: ε_r ~ 24.27, Q × f ~ 82,000 GHz (at 9 GHz) and τ_f ~ 0 ppm/°C.     

Growth of silicon carbide thin films by hot-wire chemical vapor deposition from SiH4/CH4/H2

Silicon carbide (SiC) thin films were prepared by hot-wire chemical vapor deposition from SiH₄/CH₄/H₂ and their structural properties were investigated by X-ray diffraction, Fourier transform infrared absorption and Raman scattering spectroscopies. At 2 Torr, Si-crystallite-embedded amorphous SiC (a-Si_1 − xC_x:H) grew at filament temperatures (T_f) below 1600 °C and nanocrystalline cubic SiC (nc-3C-SiC:H) grew above T_f = 1700 °C. On the other hand, At 4 Torr, a-Si_1 − xC_x:H grew at T_f = 1400 °C and nc-3C-SiC grew above T_f = 1600 °C. When the intakes of Si and C atoms into the film per unit time are almost the same and H radicals with a high density are generated, which takes place at high T_f, nc-3C-SiC grows. On the other hand, at low T_f the intake of Si atoms is larger than that of C atoms and, consequently, Si-rich a-Si_1 − xC_x:H or Si-crystallite-embedded a-Si_1 − xC_x:H grow.     

New dielectric material system of x(Mg0.95Zn0.05Ti)O3-(1 − x)Ca0.8Sm0.4/3TiO3 at microwave frequency

The microstructures and the microwave dielectric properties of the x(Mg_0.95Zn_0.05)TiO₃-(1 − x) Ca_0.8Sm_0.4/3TiO₃ ceramic system were investigated. In order to achieve a temperature-stable material, we studied a method of combining a positive temperature coefficient material with a negative one. Ca_0.8Sm_0.4/3TiO₃ has dielectric properties of dielectric constant ε_r ~ 120, Q × f value ~ 13,800 GHz and a large positive τ_f value ~ 400 ppm/°C. (Mg_0.95Zn_0.05)TiO₃ possesses high dielectric constant (ε_r ~ 16.21), high quality factor (Q × f value ~ 210,000 at 9 GHz) and negative τ_f value (− 59 ppm/°C). Sintering at 1300 °C with x = 0.9, 0.9(Mg_0.95Zn_0.05Ti)O₃ − 0.1 Ca_0.8Sm_0.4/3TiO₃ has a dielectric constant (ε_r) of 22.7, a Q × f value of 124,000 GHz and a temperature coefficient of resonant frequency (τ_f) of − 6.3 ppm/°C.     

Microwave dielectric properties of (Pb1−3x/2Lax)(Mg1/2W1/2)O3

La modified Pb(Mg_1/2W_1/2)O₃ were prepared by solid-state reaction process, and the sintering behavior, microstructure and microwave dielectric properties were investigated by X-ray powder diffraction (XRD), Raman scattering and HP network analyzer in this paper. A series of single phase perovskite type solid solutions with A-site vacancies (Pb_1−3x/2La_x(Mg_1/2W_1/2)O₃ (0 ≤ x ≤ 2/3)) were formed. The solid solution took cubic perovskite type structure (Fm3m) with random distribution of A-site vacancies when 0 < x < 0.5, and tetragonal or orthorhombic structure with the ordering of A-site vacancies when 0.5 ≤ x ≤ 2/3. The dielectric constant and temperature coefficient of resonant frequency decrease with increasing La content. Relatively good combination microwave dielectric properties were obtained for x = 0.56: ?_r = 28.7; Q × f = 18098; and τ_f = −5.8 ppm/°C.     

Structure and thermal conductivity of Gd2(TixZr1 − x)2O7 ceramics

The Gd₂(Ti_xZr_1 − x)₂O₇ (x = 0, 0.25, 0.50, 0.75, 1.00) ceramics were synthesized by solid state reaction at 1650 °C for 10 h in air. The relative density and structure of Gd₂(Ti_xZr_1 − x)₂O₇ were analyzed by the Archimedes method and X-ray diffraction. The thermal diffusivity of Gd₂(Ti_xZr_1 − x)₂O₇ from room temperature to 1400 °C was measured by a laser-flash method. The Gd₂Zr₂O₇ has a defect fluorite-type structure; however, Gd₂(Ti_xZr_1 − x)₂O₇ (0.25 ≤ x ≤ 1.00) compositions exhibit an ordered pyrochlore-type structure. Gd₂Zr₂O₇ and Gd₂Ti₂O₇ are infinitely soluable. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ increases with increasing Ti content under identical temperature conditions. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ first decreases gradually with the increase of temperature below 1000 °C and then increases slightly above 1000 °C. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ is within the range of 1.33 to 2.86 W m^− 1 K^− 1 from room temperature to 1400 °C.     

Effect of composition on critical current density of Bi2212/Ag round wires

We have fabricated Bi2212/Ag round wires using three kinds of precursor to study the effect of a narrow variation of composition. Slightly different compositions - Bi_2.17Sr_1.94Ca_0.89Cu_2.0O_x(N13), Bi_2.15Sr_1.94Ca_0.89Cu_2.0O_x(N14), and Bi_2.17Sr_1.98Ca_0.89Cu_2.0O_x(N15) - were used and Sr/Ca ratio of them were 2.18, 2.18, and 2.22, respectively. The Ag ratios of the wires were 2.7-2.8 and average filament diameter was 19-21 μm. DTA analysis of the wire showed the peritectic temperature of three wires was very similar value of the range of 880-881 °C. The best engineering critical current density (J_e) of three wires at 4.2 K and 0 T was 414-448 A/mm² at the maximum process temperature range of 884-892 °C. The n-value of N14 showed 13.6, whereas other two wires showed lower n-value, estimating the existence of micro-cracks. Although Bi2212/Ag round wires fabricated by three kinds of composition showed similar J_e value, n-value was quite different. It is likely that the fabrication process such as the drawing as well as the composition of precursor will affect on J_e of Bi2212/Ag round wire.     

Magnetic properties of epitaxial thin films and bulk of Eu(Ni,Mn)O3 perovskites

Magnetic properties of EuNi_xMn_1 − xO₃ were studied in bulk form and, for a specific composition (x = 1/3), as epitaxial thin film. Paramagnetic properties are interpreted as a VanVleck contribution of the ⁷F Eu³⁺ configuration, showing linear decrease of the effective moment and VanVleck susceptibility as x(Ni) increases. The ordered state was studied for three particular compositions which describe different regimes: canted-antiferromagnetism for x(Ni) = 1/4 and ferromagnetism for x(Ni) = 1/2, the composition x(Ni) = 1/3 being at the frontier of both regimes. Nominal composition x(Ni) = 1/3 was chosen for epitaxial films, since it corresponds to a critical concentration for which a maximum number of pairs Mn³⁺-Mn⁴⁺ and optimal double-exchange interactions are found. The coercive field is enhanced, and the field dependence of T_max is reduced as if the coherent ferromagnetic phase is favoured at the boundary of the magnetic domains.     

Parameterization of CuIn1−xGaxSe2 (x = 0, 0.5, and 1) energy bands

Parameterization of the electronic band structure of CuIn_1−xGa_xSe₂ (x = 0, 0.5, and 1) demonstrates that the energy dispersions of the three uppermost valence bands [E_j(k); j = v1, v2, and v3] are strongly anisotropic and non-parabolic even very close to the Γ-point valence-band maximum E_v1(0). Also the lowest conduction band E_c1(k) is anisotropic and non-parabolic for energies ~ 0.05 eV above the band-gap energy. Since the electrical conductivity depends directly on the energy dispersion, future electron and hole transport simulations of CuIn_1−xGa_xSe₂ need to go beyond the parabolic approximation of the bands. We therefore present a parameterization of the energy bands, the k-dependency of the effective electron and hole masses m_j(k), and also an average energy-dependent approximation of the masses m_j(E).     

Dielectric properties of a new ceramic system (1 − x)Mg4Nb2O9-xCaTiO3 at microwave frequency

The microstructures and the microwave dielectric properties of the (1 − x)Mg₄Nb₂O₉-xCaTiO₃ ceramic system were investigated. In order to achieve a temperature-stable material, CaTiO₃ (τ_f ∼ 800 ppm/°C) was chosen as a τ_f compensator and added to Mg₄Nb₂O₉ (τ_f ∼ −70 ppm/°C) to form a two phase system. It was confirmed by the XRD and EDX analysis. By appropriately adjusting the x-value in the (1 − x)Mg₄Nb₂O₉-xCaTiO₃ ceramic system, near-zero τ_f value can be achieved. A new microwave dielectric material, 0.5Mg₄Nb₂O₉-0.5CaTiO₃ applicable in microwave devices is suggested and possesses the dielectric properties of a dielectric constant ?_r ∼ 24.8, a Q × f value ∼82,000 GHz (measured at 9.1 GHz) and a τ_f value ∼−0.3 ppm/°C.     

A Quantum Algorithm Detecting Concentrated Maps

We consider an arbitrary mapping f: {0, …, N − 1} → {0, …, N − 1} for N = 2ⁿ, n some number of quantum bits. Using N calls to a classical oracle evaluating f(x) and an N-bit memory, it is possible to determine whether f(x) is one-to-one. For some radian angle 0 ≤ θ ≤ π/2, we say f(x) is θ − concentrated if and only if e^2πif(x)/N ? e^{i[ψ₀?θ,ψ₀+θ]} for some given ψ₀ and any 0 ≤ x ≤ N − 1. We present a quantum algorithm that distinguishes a θ-concentrated f(x) from a one-to-one f(x) in O(1) calls to a quantum oracle function U_f with high probability. For 0 < θ < 0.3301 rad, the quantum algorithm outperforms random (classical) evaluation of the function testing for dispersed values (on average). Maximal outperformance occurs at θ=12sin−11π≈0.1620 rad.