The modification behaviour for Si implanted PET

Polymeric solids have low density, high ability to form intricate shapes, versatile electronic properties and low manufacturing cost. However their uses are still limited by their inherent softness and unexpected dielectric properties. In order to enhance their electrical and mechanical properties, ion implantation techniques have been explored[1—3]. Recent studies have shown that ion implantation is very effective for improving surface properties of polymers such as surface hardness and wear…     

Influence of Aluminum Ions Implantation on Corrosion Behavior of Zircaloy-2 Alloy in 1M H2SO4

The specimens were implanted with aluminum ions with fluence ranging from 1× 10^16 to 1× 10^17 ions/cm^2 to study the effect of aluminum ion implantation on the aqueous corrosion behavior of zircaloy-2 by metal vapor vacuum arc source （MEVVA） at an extraction voltage of 40 kV. The valence states and depth distributions of elements in the surface layer of the samples were analyzed by X-ray photoelectron spectroscopy （XPS） and Auger electron spectroscopy （AES）, respectively. Transmission electron microscopy （TEM） was used to examine the microstructure of the aluminum-implanted samples. Glancing angle X-ray diffraction （GAXRD） was employed to examine the phase transformation due to the aluminum ion implantation. The potentiodynamic polarization technique was employed to evaluate the aqueous corrosion resistance of implanted zircaloy-2 in a 1 M H2SO4 solution. It is found that a significant improvement was achieved in the aqueous corrosion resistance of zircaloy-2 implanted with aluminum ions. Finally, the mechanism of the corrosion behavior of aluminum- implanted zircaloy-2 was discussed.     

The corrosion behavior of nano-meter embedded phase in Ti implanted H13 steel

On the SEM micrographs of Ti implanted H13 steel, a tree-branch-like structure can be observed. Further investigation with TEM shows that the newly tormed composition is a formation of nann-meter FeTi_2 phase in Ti implanted layer. The layer with a relatively high corrosion resistance has been formed in Ti implanted H13 steel with this structure.The results of electrochemical measurement show that the corrosion current density decreases obviously with an increase of ion dose. The corrosion current density in Ti implanted steel with a dose of 1.3×10~(18)/cm~2 is 8-20 times less than that of Ti implanted steel with a dose of 6×10~(17)/cm~2. The corrosion behavior of Ti implanted steel with a dose of 6×10~(17)/cm~2 could be further improved as the sample was annealed at 500℃ for 20 min and the corrosion current density decreases by 48-80 times compared to that of non-implanted samples. The corrosion trace was not observed on the annealing sample by SEM, after multi-sweep cyclic voltammetry of 40 cycles     

Plasma-enhanced Chemical Vapordeposition SiO2 Film after Ion Implantation Induces Quantum Well Intermixing

A method of QWI ( quantum well intermixing) realizing through plasma-enhanced chemical vapordepositiom (PECVD) SiO2 film following ion implantation was investigated. PECVD 200 nm SiO2 film after 160 keV phosphorus(P) ion implantation was performed to induce InP-based multiple-quantum-well (MQW) laser structural intermixing, annealing process was carried out at 780 ℃ for 30 seconds under N2 flue, the blue shift ofphotoluminescence (PL) peak related to implanted dose: 1 × 1011 , 1 × 1012, 1 × 1013 ,3 × 1013 , 7 × 1013 ion/ cm2 is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. Under the same conditions, by comparing the blue shift of PL peak with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects in the implanting layers generated by ion implantation are much more than those in SiO2 film. So, the blue shift results mainly from ion implantation. However , SiO2 film also may promote the quantum well intermixing.     

Nano-phases and corrosion resistance of C+Mo dual implanted steel

The corrosion resistance of C + Mo dual-implanted HI3 steel was studied using multi-sweep cyclic voltammetry. The phase formation conditions for corrosion resistance and its effects were researched. The super-saturation solid station solution of Mo+ and C+ atoms was formed in Mo + C dual implanted steel. Precipitate phase with nanometer size Fe2Mo, FeMo, MoC, Fe5C3 and Fe7C3 were formed in dual implanted layer. The passivation layer consisted of these nanometer phases. The corrosion resistance of the dual implanted layer was better than that of single Mo implantation. Jp of the Mo implanted sample is 0.55 times that of H13 steel. The corrosion resistance of the dual implantation was enhanced when ion dose increased. When the Mo+ ion dose was 6 × 1017/cm2 in the dual implantation, Jp of the dual implanted sample was only 0.11 times that in H13 steel. What is important is that pitting corrosion properties of dual implanted steel were improved obviously.     

Experimental studies of N~+ implantation into CVD diamond thin films

The effects of N+ implantation under various conditions on CVD diamond films were analyzed with Raman spectroscopy, four-point probe method, X-ray diffraction (XRD), Rutherford backseattering spectroscopy (RBS), ultraviolet photoluminescence spectroscopy (UV-PL), Fourier transformation infrared absorption spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that the N+ implantation doping without any graphitization has been successfully realized when 100 keV N+ ions at a dosage of 2 × 1016 cm-2 were implanted into diamond films at 550℃ . UV-PL spectra indicate that the implanted N+ ions formed an electrically inactive deep-level impurity in diamond films. So the sheet resistance of the sample after N+ implantation changed little. Carbon nitride containing C≡N covalent bond has been successfully synthesized by 100 keV, 1.2×1018 N/cm2 N+ implantation into diamond films. Most of the implanted N+ ions formed C≡N covalent bonds with C atoms. The others were free state nitroge     

The effect of the boron-ions implantation on the performance of RADFETs

In this work, we studied on the boron-ions implantation, including the implant dose and post-annealing temperature on the performance of PMOS radiation field-effect transistors(RADFETs) in experimental. The possible traps and defects induced by ions implantation in the gate-oxide and their further impacting on the sensitivity and dose range of RADFETs were analyzed qualitatively. Our devices had the dry/wet/dry sandwich gate-oxide of 420 nm thick. Different ion-implanting doses and post-annealing temperatures were carried out during the RADFETs fabrication. We built a real time auto-measurement system to realize the auto-state-switch between irradiation and read-out modes, and in-situ measurement of output voltage for ten devices in turn at once of radiation experiment. The threshold voltage, dose range and sensitivity of RADFETs were extracted and analyzed in detail. The results showed that the highest sensitivity of 229 mV/Gy achieved when the implant dose was2.2×1011 cm.2 and the post-annealing temperature was 1000°C, and the dose range of 34 Gy as well.     

Electron Spectroscopy Studies on SiC Films before and after Hydrogen Ion Irradiation

1Introduction Theinteractionbetweenenergetichydrogenandlow Zmaterials,suchasSiC,hasbeenstudiedinseveral groupsbecausecarbidesoflowZelementsareusedfor plasmafacingcomponentsasfirstwallmaterialsin Tokamak[1,2].Hence,itisofinteresttounderstandthe effectsofHp…     

薄层轻掺杂N-GaAs半导体欧姆接触研究

利用Ni/Ge/Au/Ni/Au和Pd/In两种金属结构成功地对体硅掺杂N-GaAs半导体(Nd=10~(18)cm~(-3))和离子注入N-GaAs半导体(dose=8×10~(12)cm~2,注入有源区深度(d=0.2μm)制成低阻欧姆接触。并对实验结果和接触机理进行了讨论。所得合金接触的接触电阻率分别为10~(-6)Ωcm~2(10~(18)cm~(-3)掺杂),和10~(-3)Ωcm~(-2)(8×10~(12)cm~2注入)数量级并具有长期的稳定性。接触制备方法和GaAs工艺相适。     

Effect of metallic phase species on the corrosion resistance of 17M/（10NiO-NiFe2O4） cermet inert anode of aluminum electrolysis

1 INTRODUCTIONThere are many disadvantages in the presentaluminumelectrolysis with carbon anode ,such assevere energy consumption,carbon wasting,envi-ronmental pollution and so on.Inert electrode sys-tem can overcome these disadvantages[1 3]. Re-cently ,the researches of the inert anode materialshave mainly been concentrated on alloys[4]and cer-met materials[5 ,6]. NiFe2O4based cermets , whichpossess not only high electrical conductivity ofmetal but also good corrosion resistance of cera…     

Reduction of deep level defects in unintentionally doped 4H-SiC homo-epilayers by ion implantation

In order to reduce deep level defects, the theory and process design of 4H-SiC homoepitaxial layer implanted by carbon ion are studied. With the Monte Carlo simulator TRIM, the ion implantation range, location of peak concentration and longitudinal straggling of carbon are calculated. The process for improving deep energy level in undoped 4H-SiC homoepitaxial layer by three times carbon ion-implantation is proposed, including implantation energy, dose, the SiO2 resist mask, annealing temperature, annealing time and annealing protection. The deep energy level in 4H-SiC material can be significantly improved by implantation of carbon atoms into a shallow surface layer. The damage of crystal lattice can be repaired well, and the carbon ions are effectively activated after 1 600 ℃ annealing, meanwhile, deep level defects are decreased.     

Effect of copper ions implantation on the corrosion behavior of ZIRLO alloy in 1 mol/L H2SO4

1. IntroductionZIRLO alloy is widely used in the nuclear industrybecause of its low thermal neutron capture cross sec-tion, favorable mechanical properties, and good corro-sion resistance. For example, ZIRLO alloy can serve asfuel cladding, spreaders for …     

Preparation and reaction mechanism of red mud based ceramic simple bricks

In order to utilize solid wastes,ceramic simple bricks with high performances were made from industrial solid wastes such as red mud,fly ash and poor clay shale as main raw materials in this paper.The phase compositions and microstructures were tested by XRD,SEM and EPMA.The experimental results show that the water absorption is 45.64%,the porosity is 58.91%,bulk density is 1.29 g·cm-3,compressive strength is 54.91 MPa,bending strength is 29.52 MPa,freeze-thaw resistance is 29.28 MPa,specific heat capacity at constant pressure is 1.31 J·g-1·K-1,thermal diffusivity is 5.89×10-3 cm2·s-1,and thermal conductivity is 1.15×10-2 W·cm-1·K-1.These effects of additives and preparation process to the properties and microstructures were discussed in detail.The reaction mechanism was also discussed.The results of the reaction mechanism show that there has wollastonite and feldspar generated during the process of firing while Ca gathered around the feldspar,and then Ca would displace K and generated cacoclasite.     

Synthesis of 3D ordered macroporous indium tin oxide using polymer colloidal crystal template

Three-dimensional (3D) ordered macroporous indium tin oxide (ITO) is pre- pared using a polymer colloidal crystal template that is formed by self-assembly of the monodisperse poly(methyl methacrylate) (PMMA) microspheres. The morphologies and BET surface area of the macroporous material is examined by scanning electron micro- scope, transmission electron microscopy and N2 adsorption/desorption. Results indicate that the macroporous material has highly ordered arrays of the uniform pores replicated from the PMMA colloidal crystal template when the polymer colloidal crystal template is removed by calcinations at 500℃. The pore diameter (about 450 nm) of macroporous ITO slightly shrank to the PMMA microspheres. The BET surface area and pore volume of the macroporous material are 389 m2·g-1 and 0.36 cm3·g-1, respectively. Moreover, the macroporous ITO, containing 5 mol% Sn and after annealing under vacuum, shows the minimum resistivity of ρ = 8.2×10-3 Ω· cm. The conductive mechanism of macroporous ITO is discussed, and it is believed that the oxygen vacancies are the major factor for excellent electrical properties.     

Research on Surface Modification of 96 Al2O3 by Ni Ion Implantation

A matrix of 96 Al2O3 ceramics was implanted with Ni ion of different dosages and energies using a MEVVA implanter. Then metallic structures of copper were made on the implanted ceramics, by using selective electroless copper plating. In addition, the characteristics and microstructure of the implanted layer were studied by using the SEM, RBS and XPS. The results show that： 1） the implanted Ni exits as Ni^2, Ni^2＋, and Ni^3＋ in the surface of Al2O3 and metal Ni particles precipitate on ceramics during implantation; 2） the concentration of Ni submits to the Gauss distribution along the direction of implantation on the surface of Al2O3 and high Ni concentration on the surface can be obtained if the Ni is implanted with low energy and a high dosage and 3） Ni ion implantation can activate the surface of Al2O3 and induce electroless copper plating on the ceramics.     

Sulfonic acid modified hollow silica spheres and its application in proton exchange membranes

In order to improve the proton conductivity of hollow silica spheres (HSS)/perfluorosulfonic acid ion-exchange (PFSA) composite membranes as proton exchange membrane, sulfonic acid groups were grafted onto the surfaces of HSS via post grafting methods. TEM images and FT-IR spectra of the obtained sulfonic acid groups modified hollow silica spheres (SAMHSS) illustrated that the sulfonic acid groups were successfully grafted onto the surfaces of HSS. Water uptake and swelling degree of SAMHSS/PFSA composite membranes were found much higher than those of HSS/PFSA membranes due to the introduction of hydrophilic sulfonic acid groups. In a range from 50 °C to 130 °C, the highest conductivity of composite membranes was obtained when 5 wt% SAMHSS was loaded. The maximum conductivity reached 7.5×10⁻² S·cm⁻¹ at 100 °C and 100% relative humidity, even the temperature increased to 130 °C, the conductivity of composite membranes with 5 wt% SAMHSS could reach 3.7×10⁻² S·cm⁻¹ at 100 % relative humidity, while the conductivity of the recast PFSA was only 2.2×10⁻³ S·cm⁻¹.     

Preparation and characteristics of Cu/Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/MgF<Subscript>2</Subscript>/Au tunnel junction

The fabrication process of Cu/Al₂O₃/MgF₂/Au double-barrier metal/insulator/metal junction (DMIMJ) was introduced, and more stable light emission from this junction was successfully observed. The light emission physical mechanism of the junction was discussed. Results show that light emission spectrum of this structure locates at wavelength of 250–700 nm with two peaks at around 460 nm and 640 nm, which moves towards shorter wavelength region in comparison with that of the Al/Al₂O₃/Au junction. The light emission efficiency of this junction ranges from 0.7×10⁻⁵–2.0×10⁻⁵, which is 1 to 2 orders higher than that of the single-barrier Al/Al₂O₃/Au junction. The improved properties of this structure should be due to the electrons resonant tunneling effect in the double-barrier.     

高产植酸酶酵母Candida Krusei WZ-001的等离子束诱变选育

从土壤中筛选得到的 1株高产植酸酶酵母菌CandidaKruseiWZ 0 0 1 ,利用等离子诱变方法对这一菌株进行诱变 ,获得 1株植酸酶高产突变株 ,其酶活性比出发菌株提高了 98%。比较了N+、H+、Zn2 +3种离子注入菌体的诱变效果 ,实验结果表明N+离子注入效果最佳 ,注入最佳剂量为 5 0× 1 0 13N+/cm2 。     

Dopamine detection using a patch-clamp system on a planar microeletrode array electrodeposited by polypyrrole/graphene nanocomposites

To achieve a dopamine(DA)response with high sensitivity and high signal-to-noise ratio(S/N)with a patch-clamp system,polypyrrole/graphene(PPy/GR)nanocomposites were steadily electrodeposited by an electrochemical method on a planar microelectrode array(pMEA)fabricated by a standard micromachining process.The electrodeposition process was carried out by chronopotentimetry measurement scanning from 0.1 to 0.8 C/cm2at the current of 2 mA;0.5 C/cm2was found to be optimal.The pMEA modified by PPy/GR at the 0.5 C/cm2exhibits remarkable properties;for instance,the standard deviation(SD)decreases from 8.4614×10-11to 5.62×10 11A,reduced by 33.52%,and the sensitivity increases from 2566.88 to 76114.65μAmMcm-2,29.65 times higher than the bare Pt(platinum).A good linear relationship between the current and DA concentration in the range of 0.30 to 61.71μm was obtained,with a correlation coefficient of 0.997.The sensor is meaningful for neuroscience research and the treatment of neurological diseases.     

The mechanism study on annealing embrittlement of Al_(88)Ce_2Ni_9Fe_1 metallic glass

The mechanism of annealing embrittlement of Al88Ce2Ni9Fe1 metallic glass is studied by using SAXS. For this alloy the activation energy for embrittlement, Eb=(160±10) kJ·mol-1 is obtained It approaches the value of the activation energy for crystallization, Ec= (170± 10} kJ·mol-1 . The significant change in SAXS intensity is observed as the sample transformed from the ductile to the brittle state. About 0. 1 volume fraction of Al crystalline particle and 60 m2/cm3 of specific inner surface between crystalline and amorphous phase appear as the sam ple transformed from the ductile to the brittle state. The annealing embrittlement is caused by crystallization of this alloy.