Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition

ZnO/Al₂O₃ multilayers were prepared by alternating atomic layer deposition (ALD) at 150°C using diethylzinc, trimethylaluminum, and water. The growth process, crystallinity, and electrical and optical properties of the multilayers were studied with a variety of the cycle ratios of ZnO and Al₂O₃ sublayers. Transparent conductive Al-doped ZnO films were prepared with the minimum resistivity of 2.4 × 10⁻³ Ω·cm at a low Al doping concentration of 2.26%. Photoluminescence spectroscopy in conjunction with X-ray diffraction analysis revealed that the thickness of ZnO sublayers plays an important role on the priority for selective crystallization of ZnAl₂O₄ and ZnO phases during high-temperature annealing ZnO/Al₂O₃ multilayers. It was found that pure ZnAl₂O₄ film was synthesized by annealing the specific composite film containing alternative monocycle of ZnO and Al₂O₃ sublayers, which could only be deposited precisely by utilizing ALD technology.     

Role of vanadium ions,oxygen vacancies,and interstitial zinc in room temperature ferromagnetism on ZnO-V2O5 nanoparticles

In this work, we present the role of vanadium ions (V⁺⁵ and V⁺³), oxygen vacancies (V_O), and interstitial zinc (Zn_i) to the contribution of specific magnetization for a mixture of ZnO-V₂O₅ nanoparticles (NPs). Samples were obtained by mechanical milling of dry powders and ethanol-assisted milling for 1 h with a fixed atomic ratio V/Zn?=?5% at. For comparison, pure ZnO samples were also prepared. All samples exhibit a room temperature magnetization ranging from 1.18?×?10⁻³ to 3.5?×?10⁻³ emu/gr. Pure ZnO powders (1.34?×?10⁻³ emu/gr) milled with ethanol exhibit slight increase in magnetization attributed to formation of Zn_i, while dry milled ZnO powders exhibit a decrease of magnetization due to a reduction of V_O concentration. For the ZnO-V₂O₅ system, dry milled and thermally treated samples under reducing atmosphere exhibit a large paramagnetic component associated to the formation of V₂O₃ and secondary phases containing V⁺³ ions; at the same time, an increase of V_O is observed with an abrupt fall of magnetization to σ?~?0.7?×?10⁻³ emu/gr due to segregation of V oxides and formation of secondary phases. As mechanical milling is an aggressive synthesis method, high disorder is induced at the surface of the ZnO NPs, including V_O and Zn_i depending on the chemical environment. Thermal treatment restores partially structural order at the surface of the NPs, thus reducing the amount of Zn_i at the same time that V₂O₅ NPs segregate reducing the direct contact with the surface of ZnO NPs. Additional samples were milled for longer time up to 24 h to study the effect of milling on the magnetization; 1-h milled samples have the highest magnetizations. Structural characterization was carried out using X-ray diffraction and transmission electron microscopy. Identification of V_O and Zn_i was carried out with Raman spectra, and energy-dispersive X-ray spectroscopy was used to verify that V did not diffuse into ZnO NPs as well to quantify O/Zn ratios.     

Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories

Comparison of resistive switching memory characteristics using copper (Cu) and aluminum (Al) electrodes on GeO_x/W cross-points has been reported under low current compliances (CCs) of 1 nA to 50 μA. The cross-point memory devices are observed by high-resolution transmission electron microscopy (HRTEM). Improved memory characteristics are observed for the Cu/GeO_x/W structures as compared to the Al/GeO_x/W cross-points owing to AlO_x formation at the Al/GeO_x interface. The RESET current increases with the increase of the CCs varying from 1 nA to 50 μA for the Cu electrode devices, while the RESET current is high (>1 mA) and independent of CCs varying from 1 nA to 500 μA for the Al electrode devices. An extra formation voltage is needed for the Al/GeO_x/W devices, while a low operation voltage of ±2 V is needed for the Cu/GeO_x/W cross-point devices. Repeatable bipolar resistive switching characteristics of the Cu/GeO_x/W cross-point memory devices are observed with CC varying from 1 nA to 50 μA, and unipolar resistive switching is observed with CC >100 μA. High resistance ratios of 10² to 10⁴ for the bipolar mode (CCs of 1 nA to 50 μA) and approximately 10⁸ for the unipolar mode are obtained for the Cu/GeO_x/W cross-points. In addition, repeatable switching cycles and data retention of 10³ s are observed under a low current of 1 nA for future low-power, high-density, nonvolatile, nanoscale memory applications.     

Preparation of Al2O3 coating on TiN coating by polymer-assisted deposition to improve oxidation resistance in coking inhibition applications

In order to inhibit the metal catalytic coking and improve oxidation resistance of single TiN coating, the TiN/Al₂O₃ double layer coatings were designed as a chemically inert coating for methylcyclohexane supercritical pyrolysis. Internal TiN coatings were prepared by atmospheric pressure chemical vapor deposition using TiCl₄–H₂–N₂ system. The external Al₂O₃ coatings with different thicknesses were prepared on the TiN surface by polymer-assisted deposition, and the coating with the most suitable thickness was further annealed at different temperatures of 600, 700, 800 and 900 °C. The morphology, elemental and phase composition of TiN/Al₂O₃ coatings were characterized by SEM, EDX and XRD respectively. The chemical state information of the coating elements was based on Ti 2p, Al 2p core level X-ray photoelectron spectroscopy (XPS) spectra. The results indicated that the external Al₂O₃ coating will partially peel off at 900 °C annealing temperature. The thermogravimetric analysis results indicated that all TiN/Al₂O₃ coatings show better oxidation resistance than single-layer TiN coating. The anti-coking test with methylcyclohexane supercritical pyrolysis showed that the TiN/Al₂O₃ coatings can effectively cover the metal catalytic sites and eliminate metal catalytic coking. However, the acid sites of external Al₂O₃ coating slightly promoted coking, so the anti-coking ratios of TiN/Al₂O₃ coatings were smaller than that of TiN. Thus, the addition of external Al₂O₃ coating can greatly improve the oxidation resistance of TiN coatings with little loss of coking resistance.     

Investigation of properties of electric arc ion deposited TiN coating on Al2O3-based ceramic composite

Electric arc ion deposition technique was adopted to deposit TiN coating on Al2O3-based ceramic composite. Scanning electron microscopy and secondary ion mass spectrometry were used to analyze the microstructure, phase constitution, and quality of the TiN coating and the interface. Surface roughness and micro-hardness of the TiN coating were measured to evaluate its quality. Flexural strength of ceramic materials is dependent on both their inherent resistance to fracture and the presence of defects, thus it was used to investigate the effect of electric arc ion deposition technique on the surface modification of Al₂O₃-based ceramic composite. Experimental results show that the higher the deposition bias voltage, the better the coating quality. The TiN coating is homogeneous, with a uniform surface, and free of defects when the deposition bias voltage is 300 V. The TiN coating strongly adheres to the Al₂O₃-based ceramic composite, and the observed elemental interface diffusion strengthens the interface bonding.     

Effect of ZnO:Cs2CO3 on the performance of organic photovoltaics

We demonstrate a new solution-processed electron transport layer (ETL), zinc oxide doped with cesium carbonate (ZnO:Cs₂CO₃), for achieving organic photovoltaics (OPVs) with good operational stability at ambient air. An OPV employing the ZnO:Cs₂CO₃ ETL exhibits a fill factor of 62%, an open circuit voltage of 0.90 V, and a short circuit current density of −6.14 mA/cm² along with 3.43% power conversion efficiency. The device demonstrated air stability for a period over 4 weeks. In addition, we also studied the device structure dependence on the performance of organic photovoltaics. Thus, we conclude that ZnO:Cs₂CO₃ ETL could be employed in a suitable architecture to achieve high-performance OPV.     

Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories

Enhanced resistive switching phenomena of IrO_x/GdO_x/W cross-point memory devices have been observed as compared to the via-hole devices. The as-deposited Gd₂O₃ films with a thickness of approximately 15 nm show polycrystalline that is observed using high-resolution transmission electron microscope. Via-hole memory device shows bipolar resistive switching phenomena with a large formation voltage of -6.4 V and high operation current of >1 mA, while the cross-point memory device shows also bipolar resistive switching with low-voltage format of +2 V and self-compliance operation current of <300 μA. Switching mechanism is based on the formation and rupture of conducting filament at the IrO_x/GdO_x interface, owing to oxygen ion migration. The oxygen-rich GdO_x layer formation at the IrO_x/GdO_x interface will also help control the resistive switching characteristics. This cross-point memory device has also Repeatable 100 DC switching cycles, narrow distribution of LRS/HRS, excellent pulse endurance of >10,000 in every cycle, and good data retention of >10⁴ s. This memory device has great potential for future nanoscale high-density non-volatile memory applications.     

Aluminum-doped ceria-zirconia solid solutions with enhanced thermal stability and high oxygen storage capacity

A facile solvothermal method to synthesize aluminum-doped ceria-zirconia (Ce_0.5Zr_0.5-xAl_xO_2-x/2, x = 0.1 to 0.4) solid solutions was carried out using Ce(NH₄)₂(NO₃)₆, Zr(NO₃)₃·2H₂O Al(NO₃)₃·9H₂O, and NH₄OH as the starting materials at 200°C for 24 h. The obtained solid solutions from the solvothermal reaction were calcined at 1,000°C for 20 h in air atmosphere to evaluate the thermal stability. The synthesized Ce_0.5Zr_0.3Al_0.2O_1.9 particle was characterized for the oxygen storage capacity (OSC) in automotive catalysis. For the characterization, X-ray diffraction, transmission electron microscopy, and the Brunauer-Emmet-Teller (BET) technique were employed. The OSC values of all samples were measured at 600°C using thermogravimetric-differential thermal analysis. Ce_0.5Zr_0.3Al_0.2O_1.9 solid solutions calcined at 1,000°C for 20 h with a BET surface area of 18 m² g⁻¹ exhibited a considerably high OSC of 427 μmol-O g⁻¹ and good OSC performance stability. The same synthesis route was employed for the preparation of the CeO₂ and Ce_0.5Zr_0.5O₂. The incorporation of aluminum ion in the lattice of ceria-based catalyst greatly enhanced the thermal stability and OSC.     

Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures

Thermal atomic layer-deposited (ALD) aluminum oxide (Al₂O₃) acquires high negative fixed charge density (Q_f) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Q_f can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al₂O₃ films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Q_f obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Q_f. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiO_x/Si interface region decreased with increased temperature. Measurement results of Q_f proved that the Al vacancy of the bulk film may not be related to Q_f. The defect density in the SiO_x region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.     

Methanobactin-Mediated Synthesis of Gold Nanoparticles Supported over Al2O3 toward an Efficient Catalyst for Glucose Oxidation

Methanobactin (Mb) is a copper-binding peptide that appears to function as an agent for copper sequestration and uptake in methanotrophs. Mb can also bind and reduce Au(III) to Au(0). In this paper, Au/Al₂O₃ catalysts prepared by a novel incipient wetness-Mb-mediated bioreduction method were used for glucose oxidation. The catalysts were characterized, and the analysis revealed that very small gold nanoparticles with a particle size <4 nm were prepared by the incipient wetness-Mb-mediated bioreduction method, even at 1.0% Au loading (w/w). The influence of Au loading, calcination temperature and calcination time on the specific activity of Au/Al₂O₃ catalysts was systematically investigated. Experimental results showed that decomposing the Mb molecules properly by calcinations can enhance the specific activity of Au/Al₂O₃ catalysts, though they acted as reductant and protective agents during the catalyst preparation. Au/Al₂O₃ catalysts synthesized by the method exhibited optimum specific activity under operational synthesis conditions of Au loading of 1.0 wt % and calcined at 450 °C for 2 h. The catalysts were reused eight times, without a significant decrease in specific activity. To our knowledge, this is the first attempt at the preparation of Au/Al₂O₃ catalysts by Mb-mediated in situ synthesis of gold nanoparticles.     

Nitric Oxide Does Not Inhibit but Is Metabolized by the Cytochrome bcc-aa3 Supercomplex

Nitric oxide (NO) is a well-known active site ligand and inhibitor of respiratory terminal oxidases. Here, we investigated the interaction of NO with a purified chimeric bcc-aa₃ supercomplex composed of Mycobacterium tuberculosis cytochrome bcc and Mycobacterium smegmatis aa₃-type terminal oxidase. Strikingly, we found that the enzyme in turnover with O₂ and reductants is resistant to inhibition by the ligand, being able to metabolize NO at 25 °C with an apparent turnover number as high as ≈303 mol NO (mol enzyme)⁻¹ min⁻¹ at 30 µM NO. The rate of NO consumption proved to be proportional to that of O₂ consumption, with 2.65 ± 0.19 molecules of NO being consumed per O₂ molecule by the mycobacterial bcc-aa₃. The enzyme was found to metabolize the ligand even under anaerobic reducing conditions with a turnover number of 2.8 ± 0.5 mol NO (mol enzyme)⁻¹ min⁻¹ at 25 °C and 8.4 µM NO. These results suggest a protective role of mycobacterial bcc-aa₃ supercomplexes against NO stress.     

Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure

Self-compliance resistive random access memory (RRAM) characteristics using a W/TaO _x /TiN structure are reported for the first time. A high-resolution transmission electron microscope (HRTEM) image shows an amorphous TaO _x layer with a thickness of 7 nm. A thin layer of TiO _x N _y with a thickness of 3 nm is formed at the TaO _x /TiN interface, owing to the oxygen accumulation nature of Ti. This memory device shows 100 consecutive switching cycles with excellent uniformity, 100 randomly picked device-to-device good uniformity, and program/erase endurance of >10³ cycles. It is observed that the 0.6-μm devices show better switching uniformity as compared to the 4-μm devices, which is due to the thinner tungsten (W) electrode as well as higher series resistance. The oxygen-rich TaO _x layer at the W/TaO _x interface also plays an important role in getting self-compliance resistive switching phenomena and non-linear current-voltage (I-V) curve at low resistance state (LRS). Switching mechanism is attributed to the formation and rupture of oxygen vacancy conducting path in the TaO _x switching material. The memory device also exhibits long read endurance of >10⁶ cycles. It is found that after 400,000 cycles, the high resistance state (HRS) is decreased, which may be due to some defects creation (or oxygen moves away) by frequent stress on the switching material. Good data retention of >10⁴ s is also obtained.     

Phase Relationships in the NaPO3–Al2O3 Glass-Forming System

The phase formation is studied in the NaPO₃–Al₂O₃ system (0–25 mol % Al₂O₃). It is shown that two individual compounds, namely, Na₆Al₂(P₂O₇)₃ and Na₃Al₂(PO₄)₃, exist along the studied join. The phase diagram of the NaPO₃–Al₂O₃ system (0–25 mol % Al₂O₃) is constructed. The phase separation phenomena are revealed in the melt.     

Non-isothermal nitridation kinetics of Ti6Al4V in Al2O3-based refractories

To establish a kinetic model of nitridation of Ti6Al4V in Al₂O₃-based refractories, the non-isothermal nitridation of Ti6Al4V–Al₂O₃ composite refractories at various heating rates was investigated using a thermogravimetric (TG) analyzer for large samples. The activation energy (E) and kinetic model (G(α)) for the nitridation of Ti6Al4V were determined using the isoconversional and master plots methods, respectively. The nucleation and growth of nitriding products of the TiN solid solution was the controlling step in the nitridation of Ti6Al4V in Al₂O₃-based refractories. The Avrami-Erofeev kinetic model, depicted by the G(α) = [-ln (1-α)]⁴ equation, is the most rational kinetic model. The values of E and A for the nitridation of Ti6Al4V were calculated to be 214.99 kJ/mol and 1.46 × 10⁷ (S^?1), respectively.     

Improved adhesion of TiN coatings on Al2O3–carbide composites by DFT calculations and experimental arc-PVD synthesis

Electronic and atomic structures of interfaces between TiN coatings and Al₂O₃–WC composites were investigated by Density functional theory (DFT) calculations. As typical examples, interfacial orientation relationships of TiN(001)/Al₂O₃(0001), TiN(001)/WC(0001), TiN(111)/Al₂O₃(0001), and TiN(111)/WC(0001) were chosen. It was found that the TiN(111)/Al₂O₃(0001) and TiN(111)/WC(0001) interfaces have interfacial structural units of six-fold coordinated triangular prisms centered on Ti atoms. In contrast, those of the interfaces with TiN(001) tend to have more distorted structure units due to their larger lattice misfits. Theoretical works of separation showed that interfacial strength is much more increased at the TiN(111) interfaces, as compared to those at the TiN(001) interfaces. Accordingly, experimental controls of TiN-coating orientations on Al₂O₃–WC composites were attempted by using the cathodic arc ion plating method. It was found that orientations of (111) in the TiN coatings can be more enhanced and then interfacial mechanical strengths and hardnesses of the TiN coatings can increase more with rising bias voltages.     

Charge storage characteristics of Au nanocrystal memory improved by the oxygen vacancy-reduced HfO2 blocking layer

This study characterizes the charge storage characteristics of metal/HfO₂/Au nanocrystals (NCs)/SiO₂/Si and significantly improves memory performance and retention time by annealing the HfO₂ blocking layer in O₂ ambient at 400°C. Experimental evidence shows that the underlying mechanism can be effectively applied to reduce oxygen vacancy and suppress unwanted electron trap-assisted tunneling. A memory window of 1 V at an applied sweeping voltage of ±2 V is also shown. The low program/erase voltage (±2 V) and the promising retention performances indicate the potential application of NCs in low-voltage, non-volatile memory devices.     

Activity enhancement of copper-containing oxide catalysts by addition of cesium in the reduction of nitric oxide

Catalytic reduction of nitric oxide in the presence of propylene and oxygen over alumina and copper-containing oxide catalysts has been studied. The optimum temperature for this reaction is dependent upon the composition of the catalysts: 640 K on Cu-Cs/Al₂O₃, 680 K on Cu/Al₂O₃, and 780 K on Al₂O₃. IR spectroscopic measurements show that an isocyanate (–NCO) intermediate formed on Cu-Cs/Al₂O₃ is more reactive with NO to give N₂ than the intermediate produced on Al₂O₃ and Cu/Al₂O₃. Electron donation from Cs to Cu may activate the intermediate.     

A highly efficient Cu/ZnO/Al2O3 catalyst via gel-coprecipitation of oxalate precursors for low-temperature steam reforming of methanol

The impact of preparation methods on the structure and catalytic behavior of Cu/ZnO/Al₂O₃ catalysts for H₂ production from steam reforming of methanol (SRM) has been reported. The results show that the nanostructured Cu/ZnO/Al₂O₃ catalyst obtained by a novel gel-coprecipitation of oxalate precursors has a high specific surface area and high component dispersion, exhibiting much higher activity in the SRM reaction as compared to the catalysts prepared by conventional coprecipitation techniques. It is suggested that the superior catalytic performance of the oxalate gel-coprecipitation-derived Cu/ZnO/Al₂O₃ catalyst could be attributed to the generation of “catalytically active” copper material with a much higher metallic copper specific surface as well as a stronger Cu–Zn interaction due to an easier incorporation of zinc species into CuC₂O₄ · x H₂O precursors as a consequence of isomorphous substitution between copper and zinc in the oxalate gel-precursors.     

Memory characteristics of multi-stacked thin films using La2O3 and LaAlO3 as charge trap layer

Al₂O₃/La₂O₃/Al₂O₃ (ALA) and Al₂O₃/LaAlO₃/Al₂O₃ (A/LAO/A) multi-stacked films were deposited on Si substrates by MOCVD. No interfacial layers (Al_xSi_yO_z) were observed in TEM images, and the thickness ratio of the tunnel oxide (bottom oxide), trap layer (middle oxide), and blocking oxide (top oxide) was about (1:1.3:3) in both films. Memory windows of the (ALA) and (A/LAO/A) films were 1.31 V and 3.13 V, respectively. Each value in the program/erase cycle test was maintained for up to 10⁴ cycles.     

Si-rich Al2O3 films grown by RF magnetron sputtering: structural and photoluminescence properties versus annealing treatment

Silicon-rich Al₂O₃ films (Si_x(Al₂O₃)_1−x) were co-sputtered from two separate silicon and alumina targets onto a long silicon oxide substrate. The effects of different annealing treatments on the structure and light emission of the films versus x were investigated by means of spectroscopic ellipsometry, X-ray diffraction, micro-Raman scattering, and micro-photoluminescence (PL) methods. The formation of amorphous Si clusters upon the deposition process was found for the films with x ≥ 0.38. The annealing treatment of the films at 1,050°C to 1,150°C results in formation of Si nanocrystallites (Si-ncs). It was observed that their size depends on the type of this treatment. The conventional annealing at 1,150°C for 30 min of the samples with x = 0.5 to 0.68 leads to the formation of Si-ncs with the mean size of about 14 nm, whereas rapid thermal annealing of similar samples at 1,050°C for 1 min showed the presence of Si-ncs with sizes of about 5 nm. Two main broad PL bands were observed in the 500- to 900-nm spectral range with peak positions at 575 to 600 nm and 700 to 750 nm accompanied by near-infrared tail. The low-temperature measurement revealed that the intensity of the main PL band did not change with cooling contrary to the behavior expected for quantum confined Si-ncs. Based on the analysis of PL spectrum, it is supposed that the near-infrared PL component originates from the exciton recombination in the Si-ncs. However, the most intense emission in the visible spectral range is due to either defects in matrix or electron states at the Si-nc/matrix interface.