非线性网络存储系统高可用性的解决之道:双存储架构

媒体数据是电视台生存的依赖,存储系统的高可用性对整个非线性网络系统来说是关键指标.本文分析了非线性网络存储系统面临的安全问题,主要有硬盘故障、存储系统故障、系统带宽不能满足节目制作的需求等,指出几种常见的存储高可用性技术的缺陷,重点分析了双存储架构在应用层、系统层及物理层实现的方式及特点以及双存储架构的几种典型应用,最后分析了双存储架构的缺陷及建设问题.     

基于RAID-5的机载阵列存储技术

在现有的机载环境下,对空中复杂环境的电磁信号的采集记录信息量巨大,往往无法在一次的飞行试验中实时分析所获取的信息.大容量实时信息采集存储的必要性越来越得到重视,在复杂环境中,各个波段的信号混叠预处理之后的数据需要在地面恢复重演.介绍了一种基于COM-E模块+Xilinx K7系列FPGA+RAID控制器+XMC存储模块架构的存储系统,模块化的设计更容易维护和日后升级使用.通过RAID-5的阵列管理方式灵活控制工作模式,提高存储速率.系统的实时写入带宽大于3 GB/s,可以作为机载环境下采集设备后端的高速存储设备广泛应用.     

Infiniband在高清高端非编制作中的应用探索

高清电视节目的高端非编制作具有数据量大、带宽要求高、文件要求共享等特点,对存储系统要求特别高,本文介绍了常用非编制作存储系统架构及优缺点、Infiniband的发展及技术特点、InfiniBand的技术结构、基于Infiniband的存储发展状况,以及Infiniband在高端非编制作中的系统架构及优势。     

带应急烧毁功能的高速存储模块设计与实现

针对当前人们对存储系统大容量、高速率、数据安全性的新要求,文章提出了一种带应急烧毁功能的高速大容量存储模块的设计方案。系统采用NAND型Flash实现大容量存储阵列,以PCI总线为通信接口,以FPGA为控制核心,通过对多片NAND Flash的逻辑控制实现数据的高速大容量存储。文章提出了NAND Flash芯片并行操作、流水线技术等关键技术,以确保存储系统能够满足高带宽、高速率读写需求;给出了应急数据自烧毁的电路设计,可从物理上烧毁存储核心关键数据的存储芯片,以保证系统数据的安全。测试结果表明,模块工作性能稳定,可以满足高速率和应急烧毁功能的要求。     

浅谈非编存储网络系统架构及其共享文件系统

本文结合浙江广电集团非编制播全台网系统建设,介绍了该非编网特点和对存储系统带宽的要求,并对存储网络架构和网络共享文件系统等关键技术进行了详细阐述,最后还对本网的非编存储实施进行说明。     

一种无中心的云存储架构分析

云存储是云计算的基础和支撑,它通过多种技术将存储设备抽象为虚拟的存储资源池,相对于传统存储而言具有高可靠、高可用、高扩展、低成本等优势。云存储系统基于不同的技术架构有着不同的特点,从是否存在元数据节点的角度,对有中心和无中心的典型云存储系统做了简要介绍,并对一种开源的无中心系统Gluster从系统组成、体系架构、工作原理、系统特点等几方面做了重点分析,并认为这是一种很有发展前景的云存储系统。     

分布式集群存储架构在电视台非编网中的应用

非编网系统中，存储系统的容量决定了非编网可以存储的节目素材总量，存储系统的带宽瓶颈决定了非编网可以支持的非编客户端数量，更重要的是，存储系统的安全性和稳定性对非编网络的安全性影响较大。本文所述的非编网存储系统采用分布式集群存储架构，在安全性、性能及可扩展性方面都得到了很大提高，对电视台非编网、融媒体系统、媒资系统的建设具有一定的借鉴价值。     

基于NAND Flash的海量存储器的设计

针对存储系统中对存储容量和存储带宽的要求不断提高,设计了一款高性能的超大容量数据存储器。该存储器采用NAND Flash作为存储介质,单板载有144片芯片,分为3组,每组48片,降低了单片的存储速度,实现了576 Gbyte的海量存储。设计采用FPGA进行多片NAND Flash芯片并行读写来提高读写带宽,使得大容量高带宽的存储器得以实现。针对NAND Flash存在坏块的缺点,提出了相应的管理方法,保证了数据的可靠性。     

中央电视台新址在线存储系统架构设计

在电视技术朝高清化、网络化、文件化方向发展的大背景下，中央电视台新址在线存储系统需要高效、稳定地存储和管理海量的媒体数据。在存储架构层面，在线存储系统面临FC存储架构和IP存储架构的选择。本文从系统的业务需求出发，对两种存储架构进行分析研究，并根据分析结果完成系统架构设计。     

现代数据中心网络存储量猛增 新一代网络存储系统渐成主流

SAN作为一种全新的网络存储方式,其技术的先进性决定了它将成为现代数据中心存储应用的发展趋势。随着网络技术的发展,企业网络数据存储量迅速增加,具有集中性和高效性的网络存储系统将代替传统的直接附加存储方式,成为网络存储系统的主体。基于SAN架构的数据中心网络存储系统,不仅能够解决数据中心大容量数据存放及传输的问题,     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.