铜铟铝硒薄膜离子束溅射制备与表征

采用离子束溅射方法,在玻璃衬底上沉积Cu,In,Al和Se,在同一真空环境下进行退火处理,制备得到铜铟铝硒(CIAS)太阳电池吸收层薄膜。利用扫描电镜、X射线衍射仪、能谱仪、四探针系统、分光光度计分别对薄膜的表面形貌、物相结构、晶粒尺寸、元素含量、电阻率和禁带宽度等特性进行分析。结果表明:通过控制铜铟、Cu、Al、Se各靶材的镀膜时间,实现在Cu In Se2薄膜上掺杂Al元素,制备的CIAS薄膜呈现黄铜矿结构。薄膜(112)衍射峰峰位,表面电阻率和禁带宽度随着铝含量的增加而增加,调节Al元素的含量可以使薄膜表面均匀。当Al的原子分数比X(Al)=14.47%时,(112)衍射峰最强,半高宽最小,结晶最好。当X(Al)=11.8%,N(Al)/(N(In)+N(Al))=0.37,禁带宽度为2.12 e V,薄膜表面形貌最均匀。     

Cu/Sn比率对Cu2SnSe3薄膜若干物理性质的影响

利用射频(RF)磁控溅射在玻璃基片上共溅射沉积Cu-Sn预制膜。采用固态硒化法,制备Cu/Sn化学计量比在1.87～2.22之间的Cu2SnSe3薄膜。研究了Cu/Sn比率对Cu2SnSe3薄膜的晶体结构、微结构、光学性能以及电学性能的影响。X射线衍射(XRD)结果表明,所制备的Cu2SnSe3薄膜为立方晶体结构,具有(111)择优取向;贫铜的Cu2SnSe3薄膜光学带隙Eg随着Cu/Sn比率增大而增大;富铜的Cu2SnSe3薄膜光学带隙Eg随着Cu/Sn比率增大而不变。薄膜电阻率为1.67～4.62mΩ.cm。     

热处理对CuInS2薄膜导电类型及光学特性的影响

真空蒸发在载玻片上沉积CuInS2薄膜(Cu、In、S原子配比为1∶0.1∶1.2).摸索CuInS2薄膜发生导电类型转换最有效的热处理条件,研究不同热处理工艺对CuInS2薄膜的结构、表面形貌、化学成分比和光学性能的影响.实验给出:沉积的薄膜进行360℃热处理30 min后,得到黄铜矿结构的CuInS2薄膜;SEN分析显示薄膜表面呈颗粒状较平整致密性略差,导电类型为N型,薄膜的本征吸收限为1.46eV,直接光学带隙Eg=1.38 eV.对薄膜进行370℃热处理20 min同样可得到N型CuInS2但含有少量的CuS2成分,薄膜表面致密性变好但粗糙度增大,本征吸收限发生红移为1.42 eV,Eg=1.40 eV.370℃,30 min热处理后可得到P型CuInS2薄膜,Eg=1.37 eV.制备的三种CuInS2薄膜的光吸收系数都在104 cm-1数量级以上.CuInS2薄膜中In或Cu元素含量大小,对薄膜的导电类型的变化起着决定性的作用,而薄膜中S和In元素的变化直接取决于热处理的条件.     

共溅射法制备Cu掺杂ZnO薄膜结构及性能的研究

采用直流与射频双靶共溅射的方法在玻璃衬底上制备Cu掺杂的ZnO薄膜,并研究了Cu的溅射功率以及氧分压对薄膜结构和光电性能的影响,利用X射线衍射仪(XRD)、紫外可见光分光光度计(UV-VIS)以及霍尔测试仪(HALL8800)分别对样品的结构、光学特性以及电学特性进行表征,结果表明,薄膜的结晶质量随Cu溅射功率的增大有所提高,超过一定范围开始降低,而透过率则一直减小,增大氧分压可以改善样品的透过率。Cu的掺入使薄膜发生了由n型向p型的转变,且富氧条件下有利于这种转变。     

前驱膜中Ga含量对CIGS吸收层性能的影响

采用中频交流磁控溅射方法制备了CuInGa(CIG)前驱膜,并采用固态硒化法进行处理,获得了Cu(In1-xGax)Se2(CIGS)吸收层薄膜.采用扫描电子显微镜和X射线衍射观察和分析了薄膜的成分、组织结构和表面形貌.着重分析了CIG前驱膜中的Ga含量对CIGS吸收层薄膜成分、晶体结构的影响.结果表明,通过调节CIG前驱膜的Ga含量可制备得到Cu/(In+Ga)原子比接近1,且Ga/(In+Ga)比例可调的成分分布均匀的CIGS薄膜.CIGS薄膜由Cu(In1-xGax)Se2固溶体相组成,Ga主要是以替代In的固溶形式存在.在CuIn和CuGa合金靶的功率密度分别为0.24和0.30W/cm2条件下制备的CIG前驱膜经固态硒化处理可获得Ga/(In+Ga)比高达0.2701的CIGS薄膜.     

Cu(In,Al)(S,Se)_2薄膜的三靶共溅射制备与性能表征

采用磁控三靶共溅射的方法在玻璃衬底上沉积出了Cu-In-Al预制膜,后经硫硒化工艺得到了Cu(In,Al)(S,Se)2(CIASSe)薄膜吸收层,并利用XRD、EDAX、紫外-可见分光光度计等对薄膜样品结构、成分和光电性能进行了表征。研究了溅射功率、硫硒化温度及时间等工艺参数对CIASSe薄膜的结构、成分及光电性能的影响。结果表明:在CIA30W,Al60W,Cu50W三靶共溅的组合功率下,在540℃热处理,20 min后所得薄膜为贫铜的黄铜矿结构,晶体的晶化较好,晶粒沿着(112)晶向择优生长,薄膜成分接近理想的化学计量比,表面致密均匀,且其光学带隙约为1.40 eV,是性能较为良好的太阳能吸收层薄膜。     

Cu/In原子比及硫化温度对于CuInS2薄膜性能影响

采用中频交流磁控溅射方法,在玻璃基底上沉积Cu-In预制膜,采用固态硫化法制备获得了CuInS2(CIS)吸收层薄膜.考察了预制膜Cu/In原子比及硫化温度对于CIS薄膜结构及禁带宽度影响.通过XRD及Raman光谱分析了薄膜结构,通过近红外透过曲线得出薄膜禁带宽度.结果表明,随着预制膜中Cu与In原子比(Cu/In)及硫化温度不断升高,薄膜CuAu(CA)相含量逐渐降低,黄铜矿(CH)相逐渐升高,薄膜结晶性逐渐改善.600℃以上硫化时薄膜中主要存在CH相CuInS2.薄膜禁带宽度随着预制膜中Cu/In原子比及硫化温度不断升高而升高,Cu/In原子比为1.05,硫化温度为500℃时薄膜禁带宽度可达1.40eV.     

硒化温度对铜铟镓硒太阳能电池吸收层性能的影响

用预制膜硒化法制备铜铟硒系太阳能电池的吸收层CIGSe薄膜,用X射线荧光分析(XRF)、扫描电子显微镜(SEM)、X射线衍射分析(XRD)和拉曼谱分析(Raman)以及基于霍尔效应分别测定或观测CIGSe薄膜的成分、表面形貌、结构以及电阻率和少数载流子迁移率,研究了在近玻璃软化点520-560℃区间硒化温度对薄膜成分、表面形貌、结构和电学性能的影响。结果表明:当硒化温度在520-560℃时,CIGSe薄膜的成分和表面形貌保持不变,但是随着硒化温度的升高CIGSe薄膜中有序缺陷相(ODC)和Cu-Se短路相增加,提高了薄膜内的缺陷浓度,使薄膜的少数载流子迁移率降低、电阻率增大。     

单源共蒸法制备CuInS2薄膜及特性分析

将单质Cu、In和S粉末按一定比例均匀混合,单源共蒸发沉积CuInS2薄膜.氮气保护对薄膜进行热处理.研究不同热处理条件对薄膜表面形貌、化学组分及电学特性的影响.XRD分析给出直接沉积的CuInS2薄膜为黄铜矿结构,整体性能较差.经400℃、20 min热处理后,CuInS2薄膜特性得到明显的改善,导电类型呈P型,体内元素化学计量比Cu:In:S=1:0.9:1.5接近标准值,Cu含量略多,电阻率为4.8× 10-2 Ω·cm,薄膜的直接光学带隙1.42 eV,光吸收系数105 cm-1.440℃、10 min热处理的薄膜,晶相结构没变但导电类型转为N型,元素化学计量比Cu:In:S=1:2.3:0.8,In元素过量,电阻率为1.3×10-2 Ω ·cm,光吸收系数104 cm-1,直接光学带隙1.39 eV.     

铜对双靶共溅制备热电薄膜输运性能的影响(英文)

采用双靶共溅法制备了铜掺杂的碲化铋锑热电薄膜,铜与碲化铋锑共溅的方法有利于形成沿c轴方向择优生长的碲化铋锑薄膜。结果表明,铜原子均匀的掺杂在碲化铋锑薄膜材料中。由于铜原子有利于提高载流子迁移率,薄膜材料的电导率随着铜掺杂比例的提高得到了极大的提升。当铜靶的溅射功率为20 W时,可以得到最高的电导率,同时功率因子的最佳值可提升到20μW/(cm·K2)。     

靶功率对溅射沉积CIGS薄膜的结构与光学性能的影响

采用单靶磁控溅射方法分别在玻璃和镀有Mo背电极的Soda-lime玻璃衬底上沉积Cu(In0.7Ga0.3)Se2(CIGS)薄膜。研究了靶功率变化对CIGS薄膜的晶体结构、表面形貌和光学性能的影响。采用XRD表征薄膜的组织结构,SEM和EDS观察和分析薄膜的表面形貌和成分,紫外-可见光分光光度计测试薄膜的透过率光谱。结果表明,在不同功率下制备的CIGS薄膜均具有(112)面择优取向。当溅射功率为300W时,CIGS薄膜的表面形貌最平整,结晶最均匀,n(Cu):n(In):n(Ga):n(Se)=30.00:15.01:3.97:51.03组分符合高效吸收层的要求。溅射沉积的CIGS薄膜对可见光的平均透过率低于2%,光学带隙约为1.4eV。     

Influence of radio frequency power on structure and ionic conductivity of LiPON thin films

Lithium phosphorus oxynitride (LiPON) thin films as solid electrolytes were prepared by radio frequency magnetron sputtering of a Li₃PO₄ target in ambient nitrogen atmosphere. The influence of radio frequency (rf) power on the structure and the ionic conductivity of LiPON thin films has been investigated. The morphology, composition, structure and ionic conductivity of thin films were characterized by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy and a.c. impedance measurement. It was found that ionic conductivity of LiPON thin films increases with N content in thin films. XPS measurements reveal that ionic conductivity also keeps relativity with the structure of thin films. Higher the N _t/N _d ratio, higher will be the ionic conductivity of LiPON thin films. And both of them can be improved by increasing rf power from 1·5 W/cm² to 5·5 W/cm².     

Deposition process,microstructure and mechanical behaviours of RF magnetron sputtered (Ti,Al)N thin films

Abstract

Thin films of (Ti,Al)N with different Al contents were co-deposited using one Ti and one Al targets by radio frequency (RF) pulsed magnetron sputtering. Their composition, microstructure, nanohardness, surface morphology and deposition process were investigated by energy dispersive spectrometer system, X-ray diffraction, nanoindentation, atomic force microscopy and optical emission spectrum. A face cubic centred (fcc) TiN (B1) structure was found in the thin films when Al target power was low. When Al target power was increased, an additional hexagonal AlN (B4) structure appeared. With increasing Al content, the resulting films gradually changed from B1 structure to that of B4, accompanying with decrease of the lattice constant of B1 structure. Simultaneously, the preferred orientation of B4 structural thin films gradually transformed from (111) to (200). The mode of thin films transformed from island to fibre, subsequently to column with increasing Al target power. Optical emission spectrum analysis indicated that Al target surface reached non-metal sputtering mode earlier than that of Ti target under the same deposition parameters, which resulted in a lower sputtering rate of Al target than Ti target and loss of Al content in (Ti,Al)N thin films.     

Evaluation of hafnium nitride thin films sputtered from a hafnium nitride target

Hafnium nitride (HfN) thin films were prepared on Si (100) substrates by radio frequency magnetron sputtering with a compound target. Nitrogen composition, work function and electrical resistivity were investigated to evaluate thin film properties. Nitrogen composition and work function had little dependence on argon gas pressure and radio frequency power. Electrical resistivity showed strong correlation with the substrate temperature. When thin films were fabricated at room temperature, the electrical resistivity was 100 μΩ cm, and it became lower with an increase in the substrate temperature. When the films were fabricated at 600 °C, the resistivity became less than 50 μΩ cm.     

Deposition and heat treatment of CuAlNi shape memory thin films

CuAlNi thin films were fabricated by magnetron sputtering process. After heat treatment, the thin films presented a shape memory effect. Calowear method was used to measure the thickness of the thin films. SEM, XRD and TEM were used to characterize the thin films. The phase transformation in the thin films was examined by DSC. The deposition rate increased with increasing sputtering power and decreased with increasing Ar pressure. Compared to the composition of the target, both the content of Al and the content of Ni increased a little. The sputtering conditions had little influence on the content of Ni. The content of Al varied slightly with sputtering power, while decreased with increasing Ar pressure. The deposited thin films were columnar. The grain size was very fine. The phases were α‐Cu and α₂. After heat treatment at 800 ^oC/ 60 min + 300 ^oC/ 60 min in vacuum, CuAlNi shape memory thin films were obtained. The phase in the heat‐treated thin films was β₁’ martensite. Martensite transformation was observed and a two‐way shape memory effect could be shown.     

Optical characterization of BCN films deposited at various N2/Ar gas flow ratios by RF magnetron sputtering

We present the deposition and optical characterization of amorphous thin films of boron carbonitride (BCN). The BCN thin films were deposited in a radio frequency magnetron sputtering system using a B₄C target. Films of different compositions were deposited by varying the ratio of argon and nitrogen gas in the sputtering ambient. X-ray photoelectron spectroscopy was used to perform surface characterization of the deposited films and a change in composition with nitrogen flow ratio was observed. The effect of gas flow ratios on the optical properties of the films was also investigated. It was found that the transmittance of the films increases with nitrogen incorporation. The optical band gap of the films ranged from 2.0 eV to 3.1 eV and increased with N₂/Ar gas flow ratio except at the highest ratio.     

Electrical and optical properties of Zn-In-Sn-O transparent conducting thin films

Indium tin oxide (ITO) is one of the widely used transparent conductive oxides (TCO) for application as transparent electrode in thin film silicon solar cells or thin film transistors owing to its low resistivity and high transparency. Nevertheless, indium is a scarce and expensive element and ITO films require high deposition temperature to achieve good electrical and optical properties. On the other hand, although not competing as ITO, doped Zinc Oxide (ZnO) is a promising and cheaper alternative. Therefore, our strategy has been to deposit ITO and ZnO multicomponent thin films at room temperature by radiofrequency (RF) magnetron co-sputtering in order to achieve TCOs with reduced indium content. Thin films of the quaternary system Zn-In-Sn-O (ZITO) with improved electrical and optical properties have been achieved.The samples were deposited by applying different RF powers to ZnO target while keeping a constant RF power to ITO target. This led to ZITO films with zinc content ratio varying between 0 and 67%. The optical, electrical and morphological properties have been thoroughly studied. The film composition was analysed by X-ray Photoelectron Spectroscopy. The films with 17% zinc content ratio showed the lowest resistivity (6.6 × 10^− 4 Ω cm) and the highest transmittance (above 80% in the visible range). Though X-ray Diffraction studies showed amorphous nature for the films, using High Resolution Transmission Electron Microscopy we found that the microstructure of the films consisted of nanometric crystals embedded in a compact amorphous matrix. The effect of post deposition annealing on the films in both reducing and oxidizing atmospheres were studied. The changes were found to strongly depend on the zinc content ratio in the films.     

RF magnetron sputtered TiNiCu shape memory alloy thin film

Shape memory alloys (SMAs) offer a unique combination of novel properties, such as shape memory effect, super-elasticity, biocompatibility and high damping capacity, and thin film SMAs have the potential to become a primary actuating mechanism for micro-actuators. In this study, TiNiCu films were successfully prepared by mix sputtering of a Ti₅₅Ni₄₅ target with a separated Cu target. Crystalline structure, residual stress and phase transformation properties of the TiNiCu films were investigated using X-ray diffraction (XRD), differential scanning calorimeter (DSC), and curvature measurement methods. Effects of the processing parameters on the film composition, phase transformation and shape-memory effects were analyzed. Results showed that films prepared at a high Ar gas pressure exhibited a columnar structure, while films deposited at a low Ar gas pressure showed smooth and featureless structure. Chemical composition of TiNiCu thin films was dependent on the DC power of copper target. DSC, XRD and curvature measurement revealed clearly the martensitic transformation of the deposited TiNiCu films. When the free-standing film was heated and cooled, a ‘two-way’ shape-memory effect can be clearly observed.     

溅射工艺参数对Ba0.5Sr0.5TiO3薄膜沉积速率和介电性能的影响

铁电/介电BST(BaxSr1-xTiO3)薄膜在微电子学、集成光学和光电子学等新技术领域有广泛的应用前景.用射频磁控溅射方法制备了厚约700 nm的Ba0.5Sr0.5TiO3薄膜,采用Al/BST/ITO结构研究了溅射功率、溅射气压、O2/(Ar O2)比和基片温度对上述BST薄膜沉积速率和介电性能的影响,并根据这些结果分析了较优的工艺条件,同时用XRD、XPS和SEM研究了薄膜的晶相、组成和显微结构.     

The electrical properties of resistive and dielectric thin films prepared by reactive sputtering from a tantalum-titanium composite target

Resistive thin films of TaTiN and dielectric thin films of TaTiO prepared by reactive co-sputtering in ArN₂ or ArO₂ mixtures from a TaTi composite target were investigated in an effort to extend the data on the electrical properties of films prepared by reactive sputtering from tantalum targets. The composition of the thin films was controlled by changing the ratio of the tantalum area to the titanium area on the composite target surface.For the TaTiN films the resistivity, the temperature coefficient of resistance and the Hall coefficient were investigated as functions of the nitrogen partial pressure and the composition of the films.The dielectric constant, the temperature coefficient of capacitance and tan δ were studied as functions of composition in films of the TaTiO system.The resistivities of TaTiN films sputtered at a nitrogen partial pressure of 4 × 10^?4 Torr varied linearly from 50 to 270 μω cm as the tantalum weight percentage of the films increased from 10 to 90%. The temperature coefficient of resistance for these films decreased, again linearly, from 1000 to ?50 ppm °C^?1 over the same range of tantalum weight percentage.As the titanium weight percentage of the films increased from 10 to 90%, the dielectric constant and tan δ for the TaTiO films varied linearly from 30 to 70 and from 0.008 to 0.025 respectively.It is believed that these resistive and dielectric thin films will be valuable for producing thin film passive elements in hybrid integrated circuits.