Storage capacity of complex Hopfield model

ＳｔｏｒａｇｅｃａｐａｃｉｔｙｏｆｃｏｍｐｌｅｘＨｏｐｆｉｅｌｄｍｏｄｅｌＳＨＵＡＩＪＷ；ＣＨＥＷＺＸ；ＬＩＵＲＴ；ＷＵＢＸ（Ｄｅｐｔ．ｏｆＰｈｙｓｉｃｓ，ＸｉａｍｅｎＵｎｉｖｅｒｓｉｔｙ，Ｘｉａｍｅｎ３６１００５，ＣＨＮ）Ａｂｓｔｒａｃｔ：ＴｈｅＤ...     

Fabrication of Organic/Polymeric Superlattice Structure and Its Use for Electroluminescent Device

ＦａｂｒｉｃａｔｉｏｎｏｆＯｒｇａｎｉｃ／ＰｏｌｙｍｅｒｉｃＳｕｐｅｒｌａｔｉｃｅＳｔｒｕｃｔｕｒｅａｎｄＩｔｓＵｓｅｆｏｒＥｌｅｃｔｒｏｌｕｍｉｎｅｓｃｅｎｔＤｅｖｉｃｅ①②ＣＨＥＮＢａｉｊｕｎ，ＨＯＵＪｉｎｇｙｉｎｇ，ＨＵＡＮＧＪｉｎｇｓｏｎｇ，...     

Structural Damage Assessment by an Embedded Fiberoptic Sensor Array and Its ANN Signal Processor

ＳｔｒｕｃｔｕｒａｌＤａｍａｇｅＡｓｓｅｓｓｍｅｎｔｂｙａｎＥｍｂｅｄｄｅｄＦｉｂｅｒｏｐｔｉｃＳｅｎｓｏｒＡｒｒａｙａｎｄＩｔｓＡＮＮＳｉｇｎａｌＰｒｏｃｅｓｓｏｒ￥ＺＨＡＯＴｉｎｇｃｈａｏ；ＨＵＡＮＧＳｈａｎｇｌｉａｎ；ＣＨＥＮＷｅｉｍｉｎ（Ｃｈ...     

Microstructural Study of Zinc Sulfide Thin Films

ＭｉｃｒｏｓｔｒｕｃｔｕｒａｌＳｔｕｄｙｏｆＺｉｎｃＳｕｌｆｉｄｅＴｈｉｎＦｉｌｍｓ①②ＣＨＥＮＭｏｕｚｈｉ，ＬＩＵＺｈａｏｈｏｎｇ，ＷＡＮＧＹｕｊｉａｎｇＷＡＮＧＨｕｉ，ＤＥＮＧＣｈｏｎｇｈｕｉ（ＸｉａｍｅｎＵｎｉｖｅｒｓｉｔｙ，Ｘｉａｍｅｎ３６１...     

A Novel Voice Coder At 4800BPS(HSEV)

ＡＮｏｖｅｌＶｏｉｃｅＣｏｄｅｒＡｔ４８００ＢＰＳ（ＨＳＥＶ）ＷａｎｇＸｉａｏｆｅｎｇＡＮＤＺｈａｏＥｒｙｕａｎ（ＤｅｐａｒｔｍｅｎｔｏｆＴｅｌｅｃｏｍｒｎｕｎｉｃａｔｉｏｎＥｎｇｉｎｅｅｒｉｎｇ，ＢｅｉｊｉｎｇＵｎｉｖｅｒｓｉｔｙｏｆＰｏｓｔｓ＆Ｔ...     

Photoconductivity Characteristics of Porous Si

ＰｈｏｔｏｃｏｎｄｕｃｔｉｖｉｔｙＣｈａｒａｃｔｅｒｉｓｔｉｃｓｏｆＰｏｒｏｕｓＳｉ①ＣＨＡＯＺｈａｎｙｕｎ，ＷＡＮＧＫａｉｙｕａｎ（ＤｅｐａｒｔｍｅｎｔｏｆＥｌｅｃｔｒｏｎｉｃＥｎｇｉｎｅｒｉｎｇ，ＳｏｕｔｈｅａｓｔＵｎｉｖｅｒｓｉｔｙ，Ｎａｎｊｉ...     

《红外与毫米波学报》第五届编辑委员会

Ｅｄｉｔｏｒ ｉｎ Ｃｈｉｅｆ (主编 )ＣＨＵＪｕｎ Ｈａｏ(褚君浩 )ＳｈａｎｇｈａｉＩｎｓｔｉｔｕｔｅｏｆＴｅｃｈｎｉｃａｌＰｈｙｓｉｃｓ ,ＣｈｉｎｅｓｅＡｃａｄｅｍｙｏｆＳｃｉｅｎｃｅｓ4 2 0ＺｈｏｎｇＳｈａｎＢｅｉＹｉＲｄ ,Ｓｈａｎｇｈａｉ 2 0 0 0 83,ＣｈｉｎａＥｘｅｃｕｔｉｖｅＥｄｉｔｏｒ ｉｎ Ｃｈｉｅｆ (执行主编 )ＭＩＺｈｅｎｇ Ｙｕ(糜正瑜 )ＳｈａｎｇｈａｉＩｎｓｔｉｔｕｔｅｏｆＴｅｃｈｎｉｃａｌＰｈｙｓｉｃｓ ,ＣｈｉｎｅｓｅＡｃａｄｅｍｙｏｆＳｃｉｅｎｃｅｓ4 2 0ＺｈｏｎｇＳｈａｎＢｅｉＹｉＲｄ ,Ｓｈａｎｇｈａｉ 2 0 0 0 83,ＣｈｉｎａＨｏｎｏｒａｒｙＡｄｖｉｓｏｒｓ (名誉顾问 )ＴＡＮＧＤｉｎｇ Ｙｕａｎ(汤定元 ) ,Ｓｈａｎｇｈａｉ,Ｃｈｉｎａ ＫＵＡＮＧＤｉｎｇ Ｂｏ(匡定波 ) ,Ｓｈａｎｇｈａｉ,ＣｈｉｎａＥｄｉｔｏｒｉａｌＢｏａｒｄ (编委 )Ｃ .Ｒ .Ｂｅｃｋｅｒ ,Ｗ櫣ｒｚｂｕｒｇ ,ＧｅｒｍａｎｙＣＨＥＮＣｈｅｎ Ｊｉａ(陈辰嘉 ) ,Ｂｅｉｊｉｎｇ ,ＣｈｉｎａＤＯＵＸｉａｏ Ｍｉｎｇ(窦晓鸣 ) ,Ｓｈａｎｇｈａｉ,...     

Magneto－optic Current Sensor Based on Total Reflections in a Quadrangular Bulk Glass

Ｍａｇｎｅｔｏ－ｏｐｔｉｃＣｕｒｒｅｎｔＳｅｎｓｏｒＢａｓｅｄｏｎＴｏｔａｌＲｅｆｌｅｃｔｉｏｎｓｉｎａＱｕａｄｒａｎｇｕｌａｒＢｕｌｋＧｌａｓｓ￥ＣＨＥＮＸｉｋｕｎ；ＱＩＵＪｉｎｇｈｅ；ＺＨＵＱｉｂｉａｏ；ＤＡＩＬａｉｆａ（ＳｈａｎｇｈａｉＵｎｉｖ...     

Depletion Mode HEMT with Refractory Metal Silicide WSi Gate

ＤｅｐｌｅｔｉｏｎＭｏｄｅＨＥＭＴｗｉｔｈＲｅｆｒａｃｔｏｒｙＭｅｔａｌＳｉｌｉｃｉｄｅＷＳｉＧａｔｅ￥ＣＨＥＮＤｉｎｇｑｉｎ；ＺＨＯＵＦａｎ（ＩｎｓｔｉｔｕｔｅｏｆＳｅｍｉｃｏｎｄｕｃｔｏｒｓ，ＡｃａｄｅｍｉａＳｉｎｉｃａ，Ｂｅｉｊｉｎｇ１０００８...     

Linear Polarization Components of Scattered 90°

ＬｉｎｅａｒＰｏｌａｒｉｚａｔｉｏｎＣｏｍｐｏｎｅｎｔｓｏｆＳｃａｔｅｒｅｄ９０°①ＣＨＥＮＹＲ，ＷＡＮＧＪＷ（Ｄｅｐｔ．ｏｆＯｐｔｉｃａｌＥｎｇ．，ＮａｎｊｉｎｇＵｎｉｖｅｒｓｉｔｙｏｆＳｃｉｅｎｃｅａｎｄＴｅｃｈｎｏｌｏｇｙ，Ｎａｎｊｉｎｇ２１０...     

Moiecuiar Doped Poiymer Light Emitting Diodes with Air—stabie Aluminum as Cathode

By using air-stable alumminum as cathode,molecular doped polymer (MDP)blue light emitting diodes(LEDs)were constructed.Poly(N-vinylcarbazole(PVK)doped with,1,1,4,4-tetrapheny 1-1,3-butadiens(TPB)was used as the light-emitting layer,a layer of 2-(4-biphenylyl)-5-(4-terbutypheny)1-3,4-oxadiazole(PBD) as hole-blocking,electron-transporting layer and a layer of tris(8-quinolinolate)-Aluminum(Alq3)film also worked as an electron-transporting layer.The device with structure of ITO/PVK;TPB/PBD/Alq3/Al was fabricated.Blue emis-sion began at about 4V,more than 1000 cd/m^2 was achieved at 14V.This is the lowest turn-on voltage for polymeric lgiht-emitting diodes(PLEDS)used air-stable elec-trodes.Such low-operating voltage,especially using air-stable aluminum as cathode,may be helpful for the devices to be used in commercially viable displays.     

有机／聚合物双异质结发光二极管

报道了用有机／聚合物薄膜材料制备的双异质结发光二极管。器件结构为：玻璃衬底／ＩＴＯ／ＰＶＫ／ＡｌｑＰＢＤ／Ａｌｑ３／Ａｌ电极。在这种结构器件中，电子和空穴分别从Ａｌ负电极和ＩＴＯ正电极中注入，产在ＰＢＤ及ＰＶＫ中传输注入到Ａｌｑ３发光层中。器件在正向偏压为４Ｖ时有绿色光输出；在正向偏压为１０Ｖ，最大亮度可达３０００ｃｄ／ｍ＾２以上。经光谱测试，电致发光峰值波长为５２３ｎｍ。     

Effect of different processing methods for the hole transporting layer on the performance of double layer organic light-emitting devices

The hole transporting layer （HTL） of organic light-emitting device （OLED） was processed by vacuum deposition and spin coating method, respectively, where N,N＇-biphenyl-N, N＇-bis（3-methylphenyl）- 1, l＇-biphenyl-4,4＇ -diamine （TPD） and poly （vinylcarbazole） （PVK） acted as the hole-transport materials. Tris-（8-hydroxyquinoline）- aluminum （Alq3） was utilized as both the light-emitting layer and the electron transporting layer. The basic structure of the device cell was： indium-tin-oxide （1TO）/PVK ： TPD/Alq3/Mg：Ag. The electroluminescent （EL） characteristics of devices were characterized. The results showed that the peak of EL spectra was located at 530 nm, which conformed to the characterizing spectrum of Alq3. Compared with using vacuum deposition method, the green emission with a maximum luminance up to 26135 cd/m2 could be achieved at a drive voltage of 15 V by selecting proper solvent using spin-coating technique, and its maximum lumi nance efficiency was 2.56 lm/W at a drive voltage of 5.5 V.     

Energy transfer in organic multilayer quantum well structure and its application to OLEDs

We fabricate a series of samples and OLEDs with organic multilayer quantum well structure, which consist of alternate PBD and Alq3. Both PBD and Alq3 are electron-transporting materials, and PBD is used as potential barrier layer, while Alq3 is used as potential well layer and emitting layer. Compared with double-layer structure, the luminescent characteris- tics of organic samples and diodes with quantum well structure are investigated and the quantum well structure helps the energy transfer between well layer and barrier layer. The quantum well structure makes carriers disperse in the different well layers and then increases the number of excitons to enhance the efficiency of the recombination.     

双层电极有机电致发光器件

主要讨论了在有机双层电致发光器件 Ｉ Ｔ Ｏ／ Ｔ Ｐ Ｄ／ Ａｌｑ３／ Ａｌ 的 Ａｌｑ３／ Ａｌ 界面处引入绝缘材料 Ａｌ２ Ｏ３ 薄层对器件性能的影响。实验发现具有双层电极 Ａｌ２ Ｏ３／ Ａｌ 的器件发光效率比单层电极 Ａｌ 的器件效率提高了六倍多,这是由于 Ａｌ２ Ｏ３ 薄层的引入,降低了界面的表面态密度,提高电子的注入能力,有效地提高了激子的辐射复合几率所致     

Electroluminescence and Photoluminescence from a Fluorescent Cobalt Porphyrin Grafted on Graphene Oxide

A new graphene oxide–cobalt porphyrin (GO–CoTPP) hybrid material has been used as an emissive layer in organic light-emitting diodes (OLEDs). Devices with fundamental structure of indium-doped tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS, 45 nm)/polyvinylcarbazole (PVK):2-(4-biphenyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole (PBD):GO–CoTPP (70 nm)/1,3,5-tris(N-phenylbenzimidazol-2-yl)-benzene (TPBI, 20 nm)/Al (150 nm) were fabricated. A red electroluminescence (EL) was obtained from thin-film PVK:PBD:CoTPP at 70 nm thickness. When CoTPP was covalently grafted on graphene oxide (GO) sheets, near-white EL was obtained. The white emission, which was composed of bluish green and red, is attributed to electroplex formation at the GO–CoTPP/PBD interface. Such electroplex emission between electrons and holes is a reason for the low turn-on voltage of the GO–CoTPP-based OLED. Maximum luminance efficiency of 1.43 cd/A with Commission International de l’Eclairage coordinates of 0.33 and 0.40 was achieved at current of 0.02 mA and voltage of 14 V.     

有机电致发光器件中复合发光区域的移动

采用在OLED有机层中夹入与主发光材料不同的发光材料薄层标记发光区域，介绍了复合发光区域位置随电压变化而移动的现象。在以Alq为发光材料的单层器件中夹入0．5nm厚的红光材料DCJTB层，或在两个位置分别夹入0．5nm厚的橙光材料QA层和红光材料DCJTB层，研究分析了电压升高时发光颜色的变化。结果表明，复合发光区域位置随电压升高由阳极一侧有机层向阴极方向移动；在有空穴阻挡层BCP层的器件中。在电子传输层与BCP层之间夹入10nm厚的DCJTB掺杂发光层，研究了不同电压时器件的发光颜色，发光区域位置在较低的电压范围内被BCP层限定，但发光区域在驱动电压很高时可越过BCP层进入电子传输层。     

不同空穴阻挡材料对白色OLED性能的影响

采用Alq3、TPBi和BCP分别作为电子传输材料和空穴阻挡材料,制备了三种器件,研究了用不同的空穴阻挡材料对器件性能的影响。实验结果表明:只采用30nm Alq3作电子传输层的器件的电流效率最大值为7.84cd/A(9V),而采用10nm Alq3作电子传输层,插入20nm的BCP和TPBi作空穴阻挡层的器件获得的电流效率最大值分别为9.72cd/A和12.21cd/A(9V)。这些结果说明空穴阻挡材料能改善器件的性能,TPBi比以BCP作为空穴阻挡层的器件性能有了很大的改善,制备的白色OLED的最大亮度和电流效率分别为22400cd/m2(17V)和12.21cd/A(9V)。     

以Liq:rubrene为单发光层的白色OLED的制备与研究

以ITO玻璃基片为衬底,8-羟基喹啉锂(Liq)掺杂红荧烯 (Rubrene)作为单一发光层,制备结构为ITO/PTV:TPD/Liq:Rubrene/Alq3/Al的白色有机电致发光器件(OLED),其量度达到3 120 cd/m2.对4种不同掺杂浓度器件进行比较,分析了掺杂剂对器件发光亮度的影响,并对上述器件的发光和电学性能进行了研究和探讨.     

掺杂发光体对红色有机电致发光的影响(英文)

为了研究掺杂发光体对红色有机电致发光二极管的增强效果,将DCJTB和C545T分别掺入Alq3,制备了双发光层的OLED器件,器件结构为玻璃/ITO/4 ,4′,4″-tris[2-naphthylphenyl-1-phenylamino]triphenyla-mine (2T-NATA)/N,N′-di (naphthalene-1-yl)-N,N′-diphenyl benzidine ( NPB)/tris-(8-hydroxyquinoline)aluminum ( Alq3):4-(dicyanomethylene)-2-tert-butyl-6 (1 ,7 ,7 ,7-tetramethyljulolidin-4-yl-vinyl)-4 H-pyran(DCJTB)/Alq3:10-(2-benzothiazolyl)-2 ,3 ,6 ,7-tetrahydro-1 ,1 ,7 ,7 ,-tetramethyl-1 H,5 H,11 H-(1)-benzopy-ropyrano-(6 ,7-8-i ,j)quinolizin-11-one (C545T)/Alq3/LiF/Al ,并且将其与单发光层的红、绿光器件相比较。实验结果表明,与单发光层的红光器件相比,加入绿光发光层的红光器件的发光特性被增强了,这种双发光层器件的最优掺杂比例为[Alq3:(2 .5 %)C545T]/[ Alq3:(1 .5 %)DCJTB](质量分数) ,在电压为11 .5 V时得到最大发光亮度为6 830 cd/ m2,在11 V电压时能得到4 .59 cd/A的最大电流效率。但是,这种方法的缺点是削弱了红光的色纯度。