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1.
最近十年来纳米磁性材料已经获得了广泛的应用.本文详细论述了由两个铁磁相组成的新型纳米晶软磁合金在理论研究和实际应用方面所取得的重要成果.重点介绍了随机各向异性模型在解释这类纳米晶软磁合金的微结构特征和磁性能方面的成功应用,以及各种纳米晶软磁合金,包括Fe-Si-B-Cu-Nb纳米晶合金、Fe (Co)-Zr-B-(Cu)纳米晶合金、Fe-M-N, C (M = Zr, Hf, Ta, Nb)薄膜、软磁颗粒膜、双相非晶态薄膜和磁性多层膜作为高频软磁材料应用的最新进展情况.  相似文献   

2.
The influence of grain boundaries on the dielectric properties of ferroelectric ceramics and polycrystalline thin films is described theoretically by the method of effective medium. Grain boundaries are modeled by low-permittivity (dead) layers, which do not exhibit ferroelectric instability. The effective permittivity of a polycrystalline material is calculated in the paraelectric regime above the transition temperature. The calculations are based on the solution of electrostatic problem for a spherical dielectric inclusion separated from the surrounding dissimilar matrix by a low-permittivity interface layer. For isotropic bulk ceramics, an analytic expression is derived for the effective permittivity as a function of the grain size, dead-layer thickness, and its permittivity. Temperature dependence of the aggregate dielectric response is calculated for BaTiO3 (BT) ceramics of different grain sizes and found to be in good agreement with measurements. It is shown that grain boundaries not only renormalize the Curie-Weiss temperature and constant, but may also cause deviations from the Curie-Weiss law. For BT polycrystalline thin films grown on dissimilar substrates, numerical calculations of the effective dielectric constants are performed, taking into account both the grain-boundary and substrate effects on the film anisotropic dielectric response. Theoretical predictions are compared with the grain size dependence of the permittivity of BT films grown on Pt-coated Si.  相似文献   

3.
The electrical conductivity of Bi3Zn2Sb3O14 pyrochlore was studied as a function of temperature and partial pressure of oxygen. Conductivity measurements by ac complex impedance analysis and ionic transference number measurements show this pyrochlore to be a mixed ionic-electronic conductor with an energy band gap of 3.15 ± 0.9 eV. A defect model in which Frenkel defects on the oxygen lattice are dominant is confirmed. Enthalpies of reduction, oxidation and the sum of oxygen vacancy formation and migration were found to be 4.82 ± 0.8 eV, 1.48 ± 1.0 eV and 1.67 ± 1.0 eV respectively.  相似文献   

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