新型压电晶体Li2B4O7的性能、生长和应用

本文详细介绍了我们在Ｌｉ２Ｂ４Ｏ７晶体坩埚下降法生长方面的研究进展，报道φ３、φ４无芯区、无孪晶、无云层、无开裂和无散射的Ｌｉ２Ｏ４Ｏ７晶体的生长条件与缺陷消除，包括高纯原料的制备与成型、缓慢的生长速率、微凸和平的固液界面形状和适当的自退火工序，同时还简要介绍了该晶体的基本性能，综述了近年来的研究进展以及该晶体在ＳＡＷ器件方面的应用。     

Si3N4晶体的压电性能第一性原理研究

Si3N4是一种具有多种优越物化性能的多功能材料.采用基于密度泛函理论(DFT)的第一性原理计算对Si3N4的高低温相(β、α)进行了对比研究.对于α相,计算得晶格常数a=0.7678nm、c=0.5566nm,弹性刚度系数c11=4.232×1011N/m2、c33=4.615×1011N/m2,压电应变常量d33=0.402pC/N;而对于β相,a=0.7536nm、c=0.2874nm,弹性刚度系数c11=4.241×1011N/m2、c33=5.599×1011N/m2,压电应变常量则几乎为零.分析表明Si3N4的α、β两相均为高硬高强材料,这与其结构由四面体组成的网络架构有关.而Si3N4高低温相的压电性能都很差,特别是β相的压电系数几乎为零,这与其结构的对称性有关,高温相结构的对称性更高,形变引起的离子位移响应抵消更多.     

近化学计量比In:Fe:LiNbO3晶体光学性能的研究

采用助溶剂法以TSSG技术生长近化学计量比SInFeLiNbO3晶体.测试S InFeLiNbO3晶体的晶格常数,SInFeLiNbO3晶体的晶格常数既小于LiNbO3晶体也小于InFeLiNbO3晶体.晶格常数的变化是由于Li+取代反位铌NbLi4+和占据锂空位引起的.测试SInFeLiNbO3晶体的红外光谱,OH-吸收峰移到3503.cm-1,测试SInFeLiNbO3晶体的指数增益系数Γ,SInFeLiNbO3晶体的Γ值达到28cm-1,高于InFeLiNbO3晶体.     

NbO3-LiNbO3无铅压电陶瓷的烧结特性和压电性能研究

采用传统陶瓷烧结工艺制备了（1-x）（K0．5Na0．5）NbO3-xLiNbO3无铅压电陶瓷，研究了陶瓷的结构、烧结特性及电性能特征．制备的（K0．5Na0．5）NbO3-LiNbO3陶瓷为单一的钙钦矿结构，室温下其相结构随LiNbO3含量增加逐渐由正交相向四方相转变，显微结构也由于LiNbO3含量的不同而表现出很大差异．与（K0．5Na0．5）NbO3陶瓷相比，（K0．5Na0．5）NbO3-LiNbO3陶瓷的烧结温度降低，烧结特性得到改善．（K0．5Na0．5）NbO3-LiNbO3陶瓷表现出优越的压电性能，其中0．94（K0．5Na0．5）NbO3—0．06LiNbO3（x=0．06）陶瓷的压电常数d33达到205pC／N，机电耦合系数kp为40．3％，kt达到49．8％．     

LiSbO3含量对BiMnO3掺杂K0.5Na0.5NbO3陶瓷的结构与压电性能的影响研究

采用传统陶瓷常压烧结工艺制备(0.996–x)KNN-0.004BM-xLS(x=0、0.01、0.02、0.03、0.04、0.05、0.06)无铅压电陶瓷,着重研究了LS的含量对(0.996–x)KNN-0.004BM-xLS陶瓷相结构和压电性能的影响。结果表明,当x≤0.02时,陶瓷具有单一的正交相结构;当0.03≤x≤0.05时,陶瓷具有正交相与四方相共存的过渡结构;当x=0.06时,陶瓷具有单一的四方相结构。陶瓷的MPB成分范围在0.03≤x≤0.05。随着LS含量的增加,陶瓷材料的d33和kp均先增加后减小,当x=0.05时,均达到最大值,分别为230 pC/N和0.42;陶瓷的To-t和Tc均向低温方向移动;当x=0时,陶瓷的To-t和Tc分别为455和215℃;当x=0.02时,陶瓷的To-t和Tc分别为385和150℃;当x=0.06时,To-t和Tc分别降至370℃和75℃。     

Sm2O3掺杂(Ba0.7Ca0.3)TiO3-Ba(Zr0.2Ti0.8)O3无铅压电陶瓷的制备与性能

采用固相合成法制备了Sm2O3掺杂的(Ba0.7Ca0.3)TiO3-Ba(Zr0.2Ti0.8)O3(BCZT)无铅压电陶瓷.借助XRD、SEM等手段对该陶瓷的显微结构与电性能进行了研究.结果表明,Sm2O3的掺杂降低了BCZT无铅压电陶瓷的烧结温度并使居里温度点Tc从85℃提高到95℃.当Sm2O3掺杂量为0.02wt%～0.1wt%时,样品具有典型ABO3型钙钛矿结构.Sm2O3掺杂量为0.02wt%时,所得陶瓷样品具有最优综合电性能,其压电常数d33、机电耦合系数kp、机械品质因子Qm、介电损耗tanδ和介电常数εr分别为590 pC/N、0.52、43、1.3%和3372.     

La2O3、Y2O3掺杂对(Na0.5Bi0.5)0.94Ba0.06TiO3无铅压电陶瓷性能的影响

以(Na0.5Bi0.5)0.94Ba0.06TiO3为基体,研究了单、双组分掺杂La2O3、Y2O3对BNBT6陶瓷的压电和介电性能及微观结构的影响。XRD分析表明:掺杂La2O3、Y2O3均得到钙钛矿结构。SEM分析表明,分别掺杂0.2%La2O3和0.2%Y2O3使得陶瓷晶粒增大,压电常数提高,双组分掺杂La2O3、Y2O3在掺杂量0.12%La2O3+0.08%Y2O3时,压电常数d33增大到最大值144.6×10-12C/N,介质损耗降低到最小值0.039。     

高质量自调Q激光晶体Cr4+,Nd3+:Gd3Ga5O12的生长

用固相合成、共沉淀等方法合成了Cr4+,Nd3+GGG晶体的单相多晶材料.讨论了共沉淀法和固相合成法合成GGG单相的技术参数.用合成的单相多晶原料生长了高质量的Cr4+,Nd3+GGG单晶.通过测晶体的光谱性质发现Cr4+,Nd3+GGG晶体在400nm和520nm附近存在Cr3+离子的强的吸收峰.在808nm附近存在Nd3+离子宽的吸收带,能与InGa二极管激光有效的耦合;在1100附近有Cr4+的较强的吸收带,可实现对Nd3+的自调Q输出.Cr4+,Nd3+GGG晶体的荧光光谱与NdGGG晶体的一样,发光中心也位于1062nm,但其强度约为NdGGG的1/5～1/6.Cr4+,Nd3+GGG晶体是一种非常有潜力的自调Q激光晶体,可以实现大功率激光器的小型化和全固化.     

织构化BaTiO3压电陶瓷材料的制备研究进展

BaTiO₃陶瓷作为一种无铅压电陶瓷有着广泛的应用前景,但常规方法制备的该类陶瓷压电性能通常不如铅基压电陶瓷。织构化是在不改变材料组分的前提下,提高压电陶瓷材料性能的重要手段。制备织构化的BaTiO₃压电陶瓷来取代铅基压电陶瓷,成为该领域近些年的研究热点之一。本文总结了BaTiO₃基压电陶瓷织构化制备技术的进展,其中除一些常见的制备技术外,还有近几年重新发展起来的电泳辅助技术以及新发展起来的电泳与强磁场辅助技术,主要介绍了这些制备技术制备织构化的BaTiO₃陶瓷的优劣,并对该领域的发展趋势进行了展望。     

TiO2包覆上转换发光材料Pr3+∶Y2SiO5的制备及其可见光催化性能的研究

为了提高TiO2对可见光的利用率,通过溶胶-凝胶法制备了TiO2包覆上转换发光材料Pr3+∶Y2SiO5的复合材料,并借助XRD、TEM、紫外-可见吸收光谱等对制备的样品进行了表征和研究。同时,研究了不同条件下制备的复合粉体对罗丹明B光降解效率。结果表明,该方法制备出的Pr3+∶Y2SiO5/TiO2复合材料较纯TiO2和简单机械混合两种粉体在可见光下具有较强的光催化效果。验证了Pr3+∶Y2SiO5作为上转换发光材料,可吸收可见光发射紫外线,从而满足TiO2光催化降解的要求。文中最后对Pr3+∶Y2SiO5/TiO2复合材料的光催化机理进行了研究。     

Growth and piezoelectric properties of Al-substituted langasite-type La3Nb0.5Ga5.5O14 crystals

The influences of aluminum substitution for gallium in the langasite-type La₃Nb_0.5Ga_5.5O₁₄ (LNG) crystals on their growth and electric properties were investigated. Al-substituted LNG (La₃Nb_0.5Ga_5.5−xAl_xO₁₄; LNGAx) single crystals up to the solubility limit x = 0.2 have been grown by the conventional Czochralski technique. The electric properties of the LNGAx crystals were investigated and compared to those of LNG. With Al substitution, the piezoelectric constants, d₁₁ and d₁₄, were slightly higher. The LNGAx crystals showed a temperature dependence of d₁₁ similar to that of the LNG crystal.     

X-ray diffraction study of La3Ga5.5Ta0.5O14 and La3Ga5.5Nb0.5O14 langasite-type single crystals

The structure of langatate (as-grown and vacuum-annealed: LGT-I and LGT-II, respectively) and langanite (seed- and tail-end portions: LGN-III and LGN-IV, respectively) single crystals grown by the Czochralski technique from charges of nominal composition La₃Ga_5.5M_0.5O₁₄ = La₃(Ga_0.5M_0.5)(1)Ga₃(2)Ga₂(3)O₁₄ (M=Ta⁵⁺, Nb⁵⁺) is studied by x-ray diffraction. The LGT-I and LGT-II crystals are shown to differ in the Ga and Ta distributions over crystallographic sites: La₃(Ga_0.52)Ta_0.48(2) ⁵⁺Ga₃(Ga_0.94Ta_0.06(1) ³⁺)₂O₁₄ in LGT-I (Ta⁵⁺ in the octahedral site Ga(1) and Ta³⁺ in the trigonal-pyramidal site Ga(3)) and La₃(Ga_0.55Ta_0.45(2) ⁵⁺)Ga₃Ga₂O_13.93(2)0.07 in LGT-II (Ta⁵⁺ in the octahedral site Ga(1) and oxygen vacancies in O(1)). The increased Ta content is responsible for the lower structural perfection of LGT-I. LGN-III and LGN-IV have essentially identical compositions, La₃(Ga_0.47Nb_0.53(1) ⁵⁺)Ga₅O₁₄ and La₃(Ga_0.48Nb_0.52(1) ⁵⁺)Ga₅O₁₄, respectively, but differ in polarity.__________Translated from Neorganicheskie Materialy, Vol. 41, No. 4, 2005, pp. 485–492.Original Russian Text Copyright © 2005 by Kuzmicheva, Tyunina, Domoroshchina, Rybakov, Dubovskii.     

Grain boundary effect on electron-beam-induced current in La3Ga5.5Ta0.5O14 crystal

La₃Ga_5.5Ta_0.5O₁₄ crystal recently attracted more attention due to its superior electromechanical properties and high Q × f product. We report that the first electron-beam-induced current experiment on La₃Ga_5.5Ta_0.5O₁₄ single crystal. This method is employed to study the effect of the crystal's grain boundary on the incident electron beam. The experimental results clearly show that when the electron beam scans over the grain boundary of the crystal, a fraction of the carriers recombine at the grain boundary and is unavailable for the current generation. This recombination rate will be enhanced when the electron beam was close to the boundary and cause a dip in the collected current. Although the crystal is an insulator, this effect still can be observed if the coating metal is proper to be chosen. It is also pointed out that the different diffusion lengths of the crystal might be due to the tilted grain boundary.     

La0.9Sr0.1Ga0.8Mg0.2O3-α的柠檬酸盐法制备和表征

采用柠檬酸盐法制备了La     

Cr-Tm ion pairs in Gd3Ga5O12 garnet

A study is presented about Cr³⁺→Tm³⁺ energy transfers in Gd₃Ga₅O₁₂ garnet at 10 K. By time-resolved spectroscopy and analysis of decay kinetics we determine the nature of the interaction and we show the existence of chromium-thulium pairs in which the chromium emission wavelength is shifted from 693.6 to 694 nm.     

Growth and luminescent properties of Lu2SiO5 and Lu2SiO5:Ce single crystalline films

Single crystalline films (SCF) of Lu₂SiO₅ (LSO) and Lu₂SiO₅:Ce (LSO:Ce) silicates with thickness of 2.5-15 μm were crystallized by liquid phase epitaxy method onto undoped LSO substrates from melt-solution based on PbO-B₂O₃ flux. The scintillation and luminescence properties of LSO:Ce SCF were compared with the properties of LSO:Ce single crystal. The peculiarities of luminescence properties of LSO:Ce SCF in comparison with crystal analog can be due to different distribution of Ce³⁺ over the Lu1 and Lu2 positions of LSO host and are further influenced by Pb²⁺ flux-originated contamination.     

Time-resolved spectroscopy of intrinsic luminescence of Y3Ga5O12 and (LaLu)3Lu2Ga3O12 single crystals

The nature of intrinsic luminescence of Y₃Ga₅O₁₂ (YGG) and (LaLu)₃Lu₂Ga₃O₁₂ (LLGG) single crystals grown from a melt was determined. In the case of a YGG single crystal containing Y_Ga antisite defects with a concentration of 0.25–0.275 at.% the intrinsic luminescence was considered as a superposition of luminescence of self-trapped excitons (STE), luminescence of excitons localized near antisite defects (LE(AD) centers) and luminescence caused by a recombination of an electron with a hole captured at Y_Ga antisite defects. Due to a large (2–3%) concentration of Lu_La antisite defects in LLGG single crystals the intrinsic luminescence was a superposition mainly of the LE(AD) center emission and the recombination luminescence of Lu_La antisite defects. The energy structure of the mentioned centers in YGG and LGGG hosts was determined from the excitation spectra of their luminescence under excitation by synchrotron radiation in the range of the fundamental absorption edge of these garnets.     

Crystal growth and characterization of Yb-doped Gd3Ga5O12

Single crystals of (Yb_xGd_1−x)₃Ga₅O₁₂ (0.0 ≤ x ≤ 1.0) have been grown by the micro-pulling-down method. Formation of continuous solid solutions with a garnet structure was confirmed. Composition dependence of the lattice constant, thermal diffusivity, specific heat capacity and thermal conductivity was investigated. Assignment of the Yb³⁺-energy levels in Gd₃Ga₅O₁₂-host lattice has been performed by using absorption, emission and Raman spectroscopy measurements at both, room temperature and at 12 K.     

Metallization of La1/3NbO3 by lithium incorporation

Lithium ion was successfully introduced into La_1/3NbO₃ with an A-site-deficient perovskite-type structure. The crystal structure and transport properties of La_1/3Li_xNbO₃ were investigated as a function of Li content (x = 0-0.59). The lattice parameters of La_1/3Li_xNbO₃ with an orthorhombic cell were enlarged with increasing Li content for x ≤ 0.3, and the structure was transformed to a pseudo-tetragonal cell for x = 0.44. The temperature dependence of electrical resistivity gradually changed from insulating to metallic with increasing x, and thermoelectric power measurement indicated that the carriers were electrons. In X-ray photoelectron spectra of the incorporated samples, Nb_3d⁴⁺ peaks appeared in addition to Nb_3d⁵⁺ peaks, which was consistent with the change of the transport properties. In spite of the success of metallization, no diamagnetic signal indicative of supercondcutivity was observed in La_1/3Li_0.59NbO₃ down to 1.8 K.     

Magnetic coupling in La0.67Ca0.33MnO3/La0.67Sr0.33CoO3/La0.67Ca0.33MnO3 sandwiches

La_0.67Ca_0.33MnO₃ (LCMO)/La_0.67Sr_0.33CoO₃ (LSCO)/LCMO trilayer films are fabricated on single-crystal substrates NdGaO₃ (110) and the interlayer coupling are investigated. Compared with LCMO single layer, sandwiches showed the enhanced metal-insulator transition temperature of LCMO layers. The magnetoresistance is dependent on spacer thickness and the peak value dramatically decreases when LSCO layer is thick enough because of shorting by the LSCO layer. The magnetic coercivity H_C shows a nonmonotonic behavior with changing spacer layer thickness and the waist-like hysteresis indicates that there is an indirect exchange coupling between the top and bottom LCMO layers across the spacer layer.