Correlating drain-current with strain-induced mobility in nanoscale strained CMOSFETs

The correlation between channel mobility gain (/spl Delta//spl mu/), linear drain-current gain (/spl Delta/I/sub dlin/), and saturation drain-current gain (/spl Delta/Idsat) of nanoscale strained CMOSFETs are reported. From the plots of /spl Delta/I/sub dlin/ versus /spl Delta/I/sub dsat/ and ballistic efficiency (Bsat,PSS), the ratio of source/drain parasitic resistance (R/sub SD,PSS/) to channel resistance (R/sub CH,PSS/) of strained CMOSFETs can be extracted. By plotting /spl Delta//spl mu/ versus /spl Delta/I/sub dlin/, the efficiency of /spl Delta//spl mu/ translated to /spl Delta/I/sub dlin/ is higher for strained pMOSFETs than strained nMOSFETs due to smaller RSD,PSS-to-RCH,PSS ratio of strained pMOSFETs. It suggests that to exploit strain benefits fully, the RSD,PSS reduction for strained nMOSFETs is vital, while for strained pMOSFETs the /spl Delta/I/sub dlin/-to-/spl Delta//spl mu/ sensitivity is maintained until R/sub SD,PSS/ becomes comparable to/or higher than R/sub CH,PSS/.     

Super compact optical add-drop multiplexer for FTTH applications based on low-loss polymer waveguide materials

Four- and eight-channel arrayed-waveguide grating (AWG) and fixed optical add-drop multiplexer (OADM) devices with channel spacing of 1200 and 600 GHz have been fabricated using super-high refractive index contrast (/spl Delta/n=0.020) triazine containing polymers. Accordingly, the size of the four-channel AWG was only 10/spl times/3 mm and the insertion loss was 3 dB.     

Optical and electrical properties of nanostructured metal-silicon-metal photodetectors

We report an experimental evaluation of the performance of silicon (Si) photodetectors incorporating one-dimensional (1-D) arrays of rectangular and triangular-shaped nanoscale structures within their active regions. A significant (/spl sim/2/spl times/) enhancement in photoresponse is achieved in these devices across the 400- to 900-nm spectral region due to the modification of optical absorption properties that results from structuring the Si surface on physical optics scales smaller than the wavelength, which both reduces the reflectivity and concentrates the optical field closer to the surface. Both patterned (triangular and rectangular lineshape) and planar Ni-Si back-to-back Schottky barrier metal-semiconductor-metal photodetectors on n-type (/spl sim/5/spl times/10/sup 14/ cm/sup -3/) bulk Si were studied. 1-D /spl sim/50-250-nm linewidth, /spl sim/1000-nm depth, grating structures were fabricated by a combination of interferometric lithography and dry etching. The nanoscale grating structures significantly modify the absorption, reflectance, and transmission characteristics of the semiconductor: air interface. These changes result in improved electrical response leading to increased external quantum efficiency (from /spl sim/44% for planar to /spl sim/81% for structured devices at /spl lambda/=700 nm). In addition, a faster time constant (/spl sim/1700 ps for planar to /spl sim/600 ps for structured at /spl lambda/=900 nm) is achieved by increasing the absorption near the surface where the carriers can be rapidly collected. Experimental quantum efficiency and photocurrents results are compared with a theoretical photocurrent model based on rigorous coupled-wave analysis of nanostructured gratings.     

Refractive index change induced by ultraviolet laser irradiations in erbium-doped tellurite glasses

A large change of refractive index, /spl Delta/n, induced by ultraviolet excimer laser irradiations in Er/sub 2/O/sub 3/-doped tellurite-based glass, which is a promising material for fibre amplifiers, has been obtained. The value of /spl Delta/n/n larger than 5% was successfully achieved, and amplitude of /spl Delta/n depending on Er/sub 2/O/sub 3/-concentrations has been found.     

Abrupt breakdown in dielectric/metal gate stacks: a potential reliability limitation?

In downscaled poly-Si gate MOSFET devices reliability margin is gained by progressive wearout. When the poly-Si gate is replaced with a metal gate, the slow wearout phase observed in ultrathin SiON and HfSiON dielectrics with poly-Si gate disappears, and with it, the reliability margin. We demonstrate for several combinations of dielectric and gate materials that the large abrupt current increase (/spl Delta/I) as compared to poly-Si is not likely due to process issues, but is an intrinsic property of the dielectric/metal gate stack. The occurrence of large /spl Delta/I is a potential limitation for the reliability of metal gate devices.     

A time-delay jitter-insensitive continuous-time bandpass /spl Delta//spl Sigma/ modulator architecture

In this paper, we present a new continuous-time bandpass delta-sigma (/spl Delta//spl Sigma/) modulator architecture with mixer inside the feedback loop. The proposed bandpass /spl Delta//spl Sigma/ modulator is insensitive to time-delay jitter in the digital-to-analog conversion feedback pulse, unlike conventional continuous-time bandpass /spl Delta//spl Sigma/ modulators. The sampling frequency of the proposed /spl Delta//spl Sigma/ modulator can be less than the center frequency of the input narrow-band signal.     

Design for high-power single-mode operation from 2-D surface-emitting ROW-DFB lasers

Stable single-mode single-lobe operation to high powers is predicted for two-dimensional surface-emitting lasers, if second-order distributed feedback/distributed Bragg reflector (DFB/DBR) gratings are preferentially placed in the elements of a resonant-optical-waveguide array. Beside their usual functions (i.e., feedback and outcoupling), the gratings act as an effective array-mode selector due to different interaction with the gratings of different array modes. The in-phase array mode is strongly favored to lase around its (lateral) resonance due to better field overlap with DFB region and lower interelement absorption loss than for nonresonant array modes. For 20-element arrays with 700/600 /spl mu/m DFB/DBR gratings, emitting at /spl lambda/=0.98 /spl mu/m, high (/spl sim/100 A/cm/sup 2/) intermodal discrimination /spl Delta/J/sub th/ is obtained. /spl Delta/J/sub th/ is enhanced to /spl sim/225 A/cm/sup 2/ by introducing free-carrier absorption in the array-interelement regions.     

Almost security of cryptographic Boolean functions

The propagation criterion, PC(/spl lscr/) of order k, is one of the most general cryptographic criteria of secure Boolean functions f. In this paper, we formalize its /spl epsiv/-almost version. The new definition requires that f(X)+f(X+/spl Delta/) is almost uniformly distributed while in the original definition, it must be strictly uniformly distributed. Better parameters are then obtained than the strict PC(/spl lscr/) of order k functions. To construct /spl epsiv/-almost PC(/spl lscr/) of order k functions, we introduce a notion of domain distance.     

The tiling phenomenon in /spl Sigma//spl Delta/ modulation

The theoretical error signal analysis of a sigma-delta (/spl Sigma//spl Delta/) modulator is a difficult problem due to the presence of a nonlinear operation (the amplitude quantization) in a feedback loop. In this paper, new deterministic knowledge on the transfer function of a /spl Sigma//spl Delta/ modulator is established, thanks to some recently observed properties of its state variables. For a large class of typical /spl Sigma//spl Delta/ modulators with constant inputs, the state variables appear to remain in a tile. We show what characteristics in a /spl Sigma//spl Delta/ modulator are specifically responsible for this property and give some initial proof of it. Under a constant input, the tiling phenomenon has as fundamental consequence that the output is a fixed and memoryless modulo function of n successive integrated versions of the input. This gives the theoretical knowledge that the modulator has an equivalent feedforward circuit expression. We give some immediate theoretical consequences on error analysis including the case of time-varying inputs.     

Finite-difference beam propagation method based on the generalized Douglas scheme for a nonuniform grid

The finite-difference beam propagation method based on the Douglas scheme is extended to a nonuniform grid. The truncation error is reduced to O(/spl Delta/x)/sup 4/, provided the grid growth factor is r=1+O(/spl Delta/x), while maintaining a tridiagonal matrix. The numerical results show that the accuracy is improved as compared with that obtained from the conventional nonuniform Crank-Nicholson scheme.     

Adaptive order reduction scheme for high-order single-bit /spl Delta//spl Sigma/ Modulators

A scheme for achieving adaptive reduction in the order of the loop filter of usual high-order, single-stage, single-bit Delta-Sigma (/spl Delta//spl Sigma/) modulators is proposed in order to improve their performance. The resulting /spl Delta//spl Sigma/ modulators can recover from instability effectively, having also an extended input signal range in comparison to that of the corresponding conventional /spl Delta//spl Sigma/ modulators.     

On the threshold Voltage of strained-Si-Si/sub 1-x/Ge/sub x/ MOSFETs

The threshold voltage shifts (/spl Delta/V/sub t(SS)/ relative to V/sub t/ of Si-control devices) in strained-Si-Si/sub 1-x/Ge/sub x/ (SS) CMOS devices are carefully examined in terms of the shifted two-dimensional energy subbands and the modified effective conduction- and valance-band densities of states. Increased electron affinity as well as bandgap narrowing in the SS layer are shown to be the predominant components of /spl Delta/V/sub t(SS)/, whereas the density-of-state terms tend to be relatively small but not insignificant. The study reveals, for both n-channel and p-channel SS MOSFETs, important physical insights on the varied surface potential at threshold, defined by energy quantization as well as the strain, and on the shifted flat-band voltage that is also part of /spl Delta/V/sub t(SS)/. Models for /spl Delta/V/sub t(SS)/ dependent on the Ge content (x), with comparisons to published data, are presented and used to show that redesign of channel doping in the SS nMOSFET to increase the significantly reduced V/sub tn(SS)/ for off-state current control tends to substantively diminish the inherent SS CMOS relative speed enhancement, e.g., by more than 40% for x=0.20. Interestingly, the SS pMOSFET model predicts small increases in the magnitude of V/sub tp(SS)/.     

Optical frequency conversion device with asymmetric κ-DBRstructure

An optical-frequency conversion device is fabricated, using monolithically integrated distributed Bragg reflector (DBR) mirrors with different coupling coefficients at the outer sides of the active and the saturable absorber regions. The input-end DBR mirror has a higher coupling coefficient than that of the output-end DBR mirror. The converted light is reflected by the input-end DBR mirror and is emitted only from the output end of the device. This device successfully performs optical frequency conversion when the input TM-polarized light has a wavelength within the wavelength range for which the reflection of the input-end DBR mirror is fairly high for TE-polarized light. The ratio of the converted-light output power for TE-polarized light from the input end to that from the output end is less than -30 dB     

基于各向异性介质的多通道平顶偏振滤波器的设计

以含各向异性介质的中心对称膜层结构为对象,通过对光束入射角及各介质层结构参数的分析,设计了一种应用于密集波分复用(DWDM)系统的TM和TE偏振光均透射的平顶多通道偏振滤波器。给出了100GHz信道间隔的平顶偏振滤波器设计实例,其TM、TE偏振光的透射率均在99.999%以上,半高全宽(FWHM)分别为17.70GHz和19.14GHz,截止度分别约为35.74dB和33.40dB,且两偏振光的各透射窗口的中心频率均符合ITU-T标准。利用光学薄膜设计软件TFCalc对本文设计的结构进行了性能模拟,所得结果与利用传输矩阵法的理论结果几乎完全一致,验证设计此结构的可行性。最后,讨论了各介质膜层折射率对滤波器性能参数的影响。本文设计结构简单,用较少的膜层数就能实现高透射率的偏振滤波。     

Statistical characterisation of adaptive antenna performance in WCDMA scenarios

Performance of an adaptive antenna array is usually expressed in terms of the average signal-to-interference plus noise ratio increase with respect to a conventional sectored antenna (/spl Delta/SINR). A complete statistical characterisation of the /spl Delta/SINR performance is provided, obtained with different adaptive antennas in real WCDMA scenarios by means of cumulative distribution functions. It is shown that /spl Delta/SINR depends not only on the beamforming algorithm but also on the spatial user distribution and service profile.     

A comparison of floating-body potential in H-gate ultrathin gate oxide partially depleted SOI pMOS and nMOS devices based on 90-nm SOI CMOS process

Based on a 90-nm silicon-on-insulator (SOI) CMOS process, the floating-body potential of H-gate partially depleted SOI pMOS and nMOS devices with physical gate oxide of 14 /spl Aring/ is compared. For pMOS devices, because the conduction-band electron (ECB) tunneling barrier is lower (/spl cong/3.1 eV), the ECB direct-tunneling current from the n/sup +/ poly-gate beside the body terminal will contribute to a large amount of electron charges into the neutral region and dominate the floating-body potential under normal operations. Conversely, owing to the higher valence-band hole tunneling barrier (/spl cong/4.5 eV), the floating-body potential of nMOS devices is dominated by the band-to-band-tunneling mechanism at the drain-body junction, not the direct-tunneling mechanism.     

Path to the measurement of positive gain on the 1315-nm transition of atomic iodine pumped by O/sub 2/(a/sup 1//spl Delta/) produced in an electric discharge

Laser action at 1315 nm on the I(/sup 2/P/sub 1/2/)/spl rarr/I(/sup 2/P/sub 3/2/) transition of atomic iodine is conventionally obtained by a near-resonant energy transfer from O/sub 2/(a/sup 1//spl Delta/) which is produced using wet-solution chemistry. The system difficulties of chemically producing O/sub 2/(a/sup 1//spl Delta/) have motivated investigations into gas phase methods to produce O/sub 2/(a/sup 1//spl Delta/) using low-pressure electric discharges. We report on the path that led to the measurement of positive gain on the 1315-nm transition of atomic iodine where the O/sub 2/(a/sup 1//spl Delta/) was produced in a flowing electric discharge. Atomic oxygen was found to play both positive and deleterious roles in this system, and as such the excess atomic oxygen was scavenged by NO/sub 2/ to minimize the deleterious effects. The discharge production of O/sub 2/(a/sup 1//spl Delta/) was enhanced by the addition of a small proportion of NO to lower the ionization threshold of the gas mixture. The electric discharge was upstream of a continuously flowing supersonic cavity, which was employed to lower the temperature of the flow and shift the equilibrium of atomic iodine more in favor of the I(/sup 2/P/sub 1/2/) state. A tunable diode laser system capable of scanning the entire line shape of the (3,4) hyperfine transition of iodine provided the gain measurements.     

Analysis of a Microwave Resonator-Feedback Oscillator (Correspondence)

The temperature stability of the oscillation frequency, (/spl Delta//spl omega/ / /spl omega/)/ /spl Delta/T, of an S-band feedback oscillator is derived in terms of the temperature stability of the stable resonator and that of the circuits external to the resonator. Conditions have been established for the optimum external circuit to achieve temperature stability of the oscillation frequency.     

Ultra-low-loss polymer waveguides

Single-mode perfluoropolymer waveguide structures exhibiting a polarization-independent ultra low loss of <0.05 dB/cm at 1310 nm and <0.07 dB/cm at 1550 nm with a /spl Delta/n of 1.6% have been fabricated for the first time. These new low-loss structures indicate relatively high-power-handling reliability at 1310 and 1550 nm. Based on this, a highly efficient arrayed-waveguide grating multi-demultiplexer with a crosstalk of 30/spl plusmn/2 dB and an insertion loss of 2.8/spl plusmn/0.3 dB is realized.