铭达胆机新旗舰：MC-2A3前级＆MC300845-AB单声道后级

美星电子是一个专业制造真空管立体声功率放大器的厂家，位于广东南海市黄岐工业区，自1991年建厂以来，主要是面向国际市场，为美欧、东南亚十几个国家和地区的经销商，加工制作胆机。1998年以后，工厂调整了经营策略，本着立足于国内市场，创立企业品牌，放眼国际市场，争取更大占有份额的精神，以“铭达”为品牌向国内市场推出了系列机型。美星所生产的真空管放大器，内部结构均采取搭棚式纯手工焊接，电子管、电容、电阻、电位器、接插件、电源线、机内排线、硅钢片、漆包线等零部件，也采用目前市场上进口的名牌产品或国内有国际质量认证的产品。美星电子厂还聘用几十年从事电子管应用技术的工程师，反复研究、论证、改进、独家制造出超频输出变压器，纯手工绕制，音域宽广，定位准确，层次分明。     

吉林省移动通信发展与展望

吉林省位于我国东北地区中部，人口2465万，面积187400平方公里，是我国著名的农业大省，玉米、大豆、水稻是主要作物，商品率极高，林区的人参、鹿茸、貂皮久负盛名，山区的铁矿、煤矿、页岩油及金、铜、锌、钼等地下资源丰富。工业已有一定基础，长春汽车和光学机械，吉林化工、石砚新闻纸著称全国，铁路发达，公路、民航发展迅速。随著改革开放的不断深入，     

酒店完美联盟——重庆

重庆位于青藏高原与长江中下游平原的过渡地带，幅员辽阔，域内江河纵横，峰峦叠翠。北有大巴山，东有巫山，东南有武陵山，南有大娄山，地形大势由南北向长江河谷倾斜，起伏较大。地貌以丘陵、山地为主．坡地面积较大，成层性明显．分布着典型的石林、峰林、溶洞、峡谷等喀斯特景观。主要河流有长江、嘉陵江、乌江、涪江、綦江、大宁河等。长江干流自西向东横贯全境，流程长达665公里，横穿巫山三个背斜，形成著名的瞿塘峡、巫峡、西陵峡．即举世闻名的长江三峡。嘉陵江自西北而来，三折入长江．有沥鼻峡、温塘峡、观音峡．即嘉陵江小三峡。重庆中心城区为长江、嘉陵江所环抱．夹两江、拥群山，山清水秀，风景独特，各类建筑依山傍水，鳞次栉比，错落有致，素以美丽的“山城”、“江城”著称于世。     

驰名商标是国家和民族的骄傲

一、名牌──民族经济强盛的象征品牌是企业的无形资产，特别是名牌商标，代表着企业的实力，代表着国家的形象。名牌产品多，是民族经济繁荣的体现，驰名商标是国家和民族的骄傲。美国作为世界超级经济大国、拥有最多的世界名牌，它在１９９４年世界排名前１０个价值最高的商标品牌中占了８名；其中可口可乐３５９．５亿美元，万宝路３３０．４５亿美元，柯达１００．２亿美元，微软９８．４２亿美元，摩托罗拉９２，９３亿美元。日本丰田、日立、松下、东芝、索尼、佳能、富士通、任天堂、德国奔驰、西门子，法国汤姆逊，荷兰飞利浦，瑞典…     

计算机应用软件开发技术的研究

软件开发具有完整的生命周期，特别是在需求分析、技术经济分析、系统设计、调试与测试、维护与升级等领域，文中探讨了计算机软件开发技术的应用实践及发展前景。计算机软件开发技术在学术研究、企业、网络中被广泛应用，其能提高对网络通信技术的利用率，强化计算机软件的服务化功能，实现资源共享，发挥新媒体技术的作用。未来，计算机软件开发技术将朝着网络化、服务化、智能化、多样化、开放化、融合化的方向发展。计算机软件开发的核心是创新，开发计算机软件应明确目标，遵循流程，注意后期维护；而开发人员要顺应时代潮流，提高自身的软件开发技术水平，学习和研究各种开发技术。     

湖北 挺直中部崛起的脊梁

茫茫九派流中国，沉沉一线穿南北”。天骄伟人的诗句点明湖北地理独一无二的特点。湖北省，位于我国中部，长江中游，北靠河南，南接江西、湖南，东邻安徽，西依四川、重庆，西北与陕西接壤，长江、汉水流贯全境，国家京九、京广焦柳、汉昌、汉渝铁路干线和公路干线316、318、106、107、207、209国道汇交于此，素有“九省通衢”之誉，在我国经济发展中占据重要的战略地位。但随着历史车轮运转，信息时代降临。湖北却在沉沦，中部更在塌陷。如今，东部凭改革开放政策和滨临沿海区位优势策马当先，西部借国家大开发战略和地区资源优势迎头赶上，只有中部的发展不温不火。昔日辉煌已逝，区位优势不再，这是中部最真实的写照。     

世界移动通信发展趋势

在全球电信日新月异的今天，移动通信的发展更加令人振奋，它以通信质量高，容量大和使用方便而进入了一个全新的时代。在日内瓦举行的第七届世界电信展览会上，移动通信产品可谓琳琅满目，美不胜收。从个人通信，卫星移动通信，蜂窝移动电话到寻呼业务；从GSM、DCS 1800，PCS、PCN，DECT、PHS、CDMA技术产品到Iridium Inmarsat-P、Odyssey卫星系统，再到FLEX、APOC、ERMES、高速寻呼产品，无不使人感到世界移动通信发展的巨大潜力。     

我国大地测量仪器的发展现状及展望

大地测量仪器是供测绘，建筑、交通、民航、铁道、地质、矿山、冶金、能源、环保、国防、科研和教学等领域用作各种测绘作业的一类光学仪器。随着科学技术的高速发展，大地测量仪器已进入光学，精密机构械，电子和计算机结合的光电子技术新时代，光电子技术形成仪器许多新的功能和良好的技术性能，使大地测量仪器从单一传统产品发展成为多功能，高效率的光机电算一体化的光电子产品，及其系统，测绘技术手段自动化，数字化，获取数据     

我国信息产业自主创新体系研究（上）

近20年来，我国信息产业发展迅速，对国民经济增长做出了突出贡献，而且在其推动下，交通、能源、金融、旅游等国民经济传统产业和社会活动各领域的信息化水平也得到了显著提升。目前，以信息化带动工业化，推进传统产业的改造，转变社会生产、工作、决策、生活等方式，提高社会劳动生产效率，实现社会生产力的跨越式发展，已经成为业内外的共识和各行业努力的目标。     

移动通信中选择第三方参与维护与优化的必然趋势

由于移动通信网络出乎意料的快速发展，出现了规划、建设、质量、评估之间的矛盾。移动通信的第一方：设备供应商，出于设备的销售目的，往往不考虑运营商投入与回报的关系，盲目加大投入，容易造成设备资源的浪费。移动通信的第二方：运营商，出于自身的利益目的，隐瞒了一些网络问题，或避重就轻，影响了网络建设。移动通信的第三方：服务商，以服务为宗旨，质量为性命，没有第一方的立场，能实事求是、长期全方位、高效、节省、专业地为网络服务。所以选择第三方参与移动通信网络的建设、维护、优化已成为一种必然趋势。     

织构对铟凸点剪切强度的影响

制作了2种形式的铟凸点：即直接蒸发沉积的铟柱和将铟柱回流得到的铟球。同时对比了铟柱和铟球2种凸点的剪切强度，测试结果表明铟球剪切强度为5.6MPa，铟柱的剪切强度为1.9MPa，前者约为后者的2.9倍。对铟凸点微观结构的X光衍射分析发现：铟柱剪切强度低是织构弱化所致；铟球剪切强度高是由于回流破坏了铟柱的理想（101）丝织构模式，从而提高了铟球的剪切强度。     

CIGS薄膜(InGa)2Se3-富Cu-富In(Ga)的演变

采用三步共蒸发工艺顺序沉积铜铟镓硒(CuInGaSe2,CIGS)薄膜.薄膜的厚度、组份、晶相结构分别由台阶仪、X射线荧光光谱仪(XRF)和X射线衍射仪(XRD)来表征.在(In,Ga)2Se3预制层-富Cu相的演变过程中,依次发生以下相变:Cu(In,Ga)5Se8、Cu(In,Ga)3Se5、Cu2(In,Ga)4Se7(或Cu(In,Ga)2Se3.5)、Cu(In,Ga)Se2(液相CuxSe).在富Cu相-富In(Ga)相的演变过程中,依次发生以下相变:Cu(In,Ga)Se2(液相CuxSe)、Cu2(In,Ga)4Se7(或Cu(In,Ga)2Se3.5)、Cu(In,Ga)3Se5、Cu(In,Ga)5Se8.对这两个演变过程中薄膜的生长机理和结构特性进行了讨论.     

Structural and electrical properties of co-evaporated In, Ga-rich CIGS thin films

The CIGS thin films are prepared by co-evaporation of elemental In, Ga and Se on the substrates of Mo-coated glasses at400℃ followed by co-evaporation of elemental Cu and Se at 550℃. We study the structural and electrical properties usingXRD, XRF and Hall effect measurements. In general, Cu(In,Cra)5Se8 phase exists when Cu/(In Ga) ratio is from 0.17 to0.27, Cu(In,Ga)3Se5 phase exists for Cu/(In Ga) ratio between 0.27 and 0.41, Cu2(In,Ga)4Se7 and Cu(In,Ga)2Se3.5 phasesexist for Cu/(In Ga) ratio between 0.41 and 0.61, and OVC(or ODC) and CuIn0.7Ga0.3 Se2 phases exist when Cu/(In Ga)ratio is from 0.61 to 0.88. With the increase of Cu/(In Ga) ratio, the carrier concentrations of the films gradually increase,but the electrical resistivity gradually decreases.     

Indium out-diffusion from silicon during rapid thermal annealing

The out-diffusion of indium (In) from In-implanted silicon (Si) samples that includes bare Si, samples with an oxide-cap layer, nitride-cap layer, and nitride/oxide/Si sandwiched samples, is investigated. The dose loss of In with respect to different implant energies, doses, and soak times during rapid thermal annealing (RTA) is quantified. Experimental results of bare Si samples show that over 90% of In out-diffusion happens within 1 sec of soak time in the RTA process. In the capped samples, In rapidly diffuses through the oxide layer and stops at the nitride/oxide interface. In gets piled up at the interface of Si/oxide and oxide/nitride, and nitride very efficiently prevents In out-diffusion from the oxide layer out to the nitride layer. In addition, In gets more segregated in the Si surface in the presence of boron.     

Boron retarded diffusion in the presence of indium or germanium

Experimental results of germanium (Ge) and indium (In) preamorphization by ion-implantation show that the diffusion of boron (B) is retarded by the presence of Ge or In and that this retardation is more important than the preamorphization (dechanneling) effect. Result shows that In retards B diffusion more than Ge and the retardation effect due to In becomes greater with increasing retained dose of In. Larger In doses cause larger strain, which results in more B being tied up in immobile clusters near the surface. In order to achieve adequate retained dose of In, the implanted dose of In must be increased to 5/spl times/10/sup 15/ cm/sup -2/. After anneal, the junction depth (at 10/sup 18/ cm/sup -3/) is reduced from 628 /spl Aring/ in the control wafer (no In co-implant) to 480 /spl Aring/.     

Soldering reactions between In49Sn and Ag thick films

The interfacial reactions between In49Sn solders and Ag thick films at temperatures ranging from 200°C to 350°C have been studied. The intermetallic compound formed at the Ag/In49Sn interface is Ag₂In enveloped in a thin layer of AgIn₂. Through the measurement of the thickness decrease of Ag thick films, it has been determined that the reaction kinetics of Ag₂In has a linear relation to reaction time. Morphology observations indicated that the linear reaction of Ag₂In was caused by the floating of Ag₂In into the In49Sn solder as a result of the In49Sn solder penetrating into the porous Ag thick film. A sound joint can be obtained when a sufficient thickness of the Ag thick film (over 19.5 μm) reacts with the In49Sn solder. In this case, the tensile tested specimens fracture in the In49Sn matrix.     

Microstructural Evolution of Sn-Ag-Sb Solder with Indium Additions

The effects of 1 wt.%, 5 wt.%, and 10 wt.% additions of indium (In) on the microstructure and compound morphology of Sn-Ag-Sb lead-free solder joints␣were examined. The results showed that In prompts the formation of Ag₃(Sn,In), Ag₂(In,Sn), and InSb compounds within the solder matrix. As the amount of In was increased, the Sn atoms in the Ag₃Sn compound were gradually replaced by In atoms, prompting a transformation from Ag₃Sn to Ag₃(Sn,In) and finally to Ag₂(In,Sn). This transformation occurs more readily under high-temperature conditions. The Ag₂(In,Sn) compound formed in Sn-Ag-Sb-xIn/Cu solder joints was found to have either a leaf-like morphology or an antler-like morphology. Finally, with In additions greater than 5 wt.%, the Cu₆Sn₅ interfacial compounds in the solder/Cu joints transformed into Cu₆(Sn,In)₅.     

CdO对In2O3电导和气敏性能的影响

为探索新型CdO-In2O3材料的气敏性能,用化学共沉淀法制备了CdO掺杂的In2O3微粉,研究了CdO掺杂对In2O3电导和气敏效应的影响。结果表明CdO和In2O3间能形成有限固溶体In2-CdxO3(0≤x≤0.02);In1.98Cd0.02O3x的电导比纯In2O3小得多;900℃下热处理4h所得的x(CdO)为2%的In2O3传感器在183℃工作温度下,对45μmol·L–1C2H5OH的灵敏度达276、响应–恢复时间只有3s和180s。有望开发为一类新型酒敏材料。     

MOOC制作技术标准研究

本文对MOOC的发展现状做出了介绍.针对MOOC中存在的问题,本文提出了课程评定、课程监督和课程反馈这三种解决方案.除此之外,本文还对影响课程的小细节做出了介绍.     

Characterizations of GaN films grown with indium surfactant by RF-plasma assisted molecular beam epitaxy

A small indium flux was used as a surfactant during the growth of gallium nitride by rf-plasma assisted molecular beam epitaxy. The effects of the In surfactant on the optical and structural properties of undoped GaN were studied by photoluminescence (PL), X-ray diffraction, atomic force microscopy (AFM), and Rutherford backscattering spectrometry (RBS). PL studies show that the use of In surfactant is beneficial to the reduction of deep-level defects. The X-ray rocking curves demonstrate a 20% decrease in the full width at half maximum value for the films grown with In surfactant. AFM studies show that the root mean squared surface roughness for films grown with and without In surfactant are 5.86 and 6.99 nm respectively indicating significant improvement in surface morphology. The improved surface morphology is attributed to the enhanced 2-dimensional growth promoted by the application of In surfactant. RBS studies show that the χ_min values along [0 0 0 1] direction are 2.06% and 2.16% for the samples grown with and without In surfactant respectively. Off-normal ion channeling studies were performed to further investigate the effects of In surfactant on the crystallinity. It is found that the number density of stacking faults is smaller for the sample grown with In surfactant compared to the one grown without In surfactant. However, defect analysis shows that dislocations are found in the sample grown with In surfactant in contrary to the one grown without In surfactant. We speculate that there is a thickness limit of GaN grown with In surfactant and the thickness of our samples exceed this limit, leading to the presence of dislocation.