Intimate monolithic integration of chip-scale photonic circuits

In this paper, we introduce a robust monolithic integration technique for fabricating photonic integrated circuits comprising optoelectronic devices (e.g., surface-illuminated photodetectors, waveguide quantum-well modulators, etc.) that are made of completely separate epitaxial structures and possibly reside at different locations across the wafer as necessary. Our technique is based on the combination of multiple crystal growth steps, judicious placement of epitaxial etch-stop layers, a carefully designed etch sequence, and self-planarization and passivation steps to compactly integrate optoelectronic devices. This multigrowth integration technique is broadly applicable to most III-V materials and can be exploited to fabricate sophisticated, highly integrated, multifunctional photonic integrated circuits on a single substrate. As a successful demonstration of this technique, we describe integrated photonic switches that consume only a 300 /spl times/300 /spl mu/m footprint and incorporate InGaAs photodetector mesas and InGaAsP/InP quantum-well modulator waveguides separated by 50 /spl mu/m on an InP substrate. These switches perform electrically-reconfigurable optically-controlled wavelength conversion at multi-Gb/s data rates over the entire center telecommunication wavelength band.     

Analysis of Hybrid Dielectric Plasmonic Waveguides

Future ultracompact photonic integrated circuits (PICs) will rely on high-index-contrast dielectric materials, which permit a strong confinement of the optical field in the diffraction limit as well as low propagation losses. This is the case of PICs implemented on a silicon-on-insulator (SOI) platform. To achieve confinement beyond the diffraction limit, plasmonic waveguides (based on metal–dielectric interfaces) have been recently proposed. This new kind of waveguide provides a strong enhancement of the field in the metal–dielectric interface, which is of paramount importance for nonlinear functionalities or sensing. Plasmonic waveguides can also be built on SOI wafers. Thus, it can be reasonably thought that high index contrast as well as plasmonic waveguides can coexist in future ultradense PICs. In this paper, a theoretical and numerical study on the performance of several dielectric and plasmonic waveguides is presented. Thanks to their plasmon-coupled supported modes, ultracompact devices as hybrid ring resonators can be devised and integrated with silicon photonic circuits.      

Silicon Microtoroidal Resonators With Integrated MEMS Tunable Coupler

A single crystalline silicon microtoroidal resonator with integrated MEMS-actuated tunable optical coupler is demonstrated for the first time. It is fabricated by combining hydrogen annealing and wafer bonding processes. The device operates in all three coupling regimes: under-, critical, and over-coupling. We have also developed a comprehensive model based on time-domain coupling theory. The experimental and theoretical results agree very well. The quality factor (Q) is extracted by fitting the experimental curve with the model. The unloaded Q is as high as 110 000, and the loaded Q is continuously tunable from 110 000 to 5400. The extinction ratio of the transmittance is 22.4 dB. This device can be used as a building block of resonator-based reconfigurable photonic integrated circuits     

Hybrid integration of smart pixels by using polyimide bonding:demonstration of a GaAs p-i-n photodiode/CMOS receiver

The fabrication procedure of smart pixels based on a hybrid integration of compound semiconductor photonic devices with silicon CMOS circuits is described. According to the 0.8-μm design rule, CMOS receiver/transmitter circuits are designed for use in vertical-cavity surface-emitting laser (VCSEL)-based smart pixels, and 16×16 and 2×2 Banyan-switch smart-pixel chips are also designed. By using our polyimide bonding technique, we integrated GaAs pin-photodiodes hybridly on the CMOS circuits. The photodetector (PD)/CMOS hybrid receiver operated error free at up to 800 Mb/s. Successful optical/optical (O/O) operation (a bit rate up to 311 Mbit/s) of the 2×2 Banyan-switch smart-pixel chip implemented with another VCSEL chip is also demonstrated     

Development of an electrothermal simulation tool for integrated circuits: Application to a two-transistor circuit

In this paper a methodology for performing electrothermal analyses on integrated circuits is introduced. Using the relaxation method, standard electrical and thermal simulators, which are often used in the design process, are coupled through an efficient interface program. The simulator is capable of performing steady-state and transient analysis at device and chip levels. A variable-time-step technique has been implemented to reduce the computational time for a given set of computational resources. The simulator has been validated on different structures such as the bipolar junction transistor to predict the temperature distribution and the device performance in an amplifier circuit and an integrated current-mirror circuit. The simulation results are compared to experimental results to verify the performance of the electrothermal simulator and the accuracy of the thermal model. Simulation results demonstrate that the approach is suitable to model the thermal effects of integrated circuits in a more time-efficient, accurate and user-friendly fashion.     

Wavelength Division Multiplexing Based Photonic Integrated Circuits on Silicon-on-Insulator Platform

We review recent advances in the development of silicon photonic integrated circuits for high-speed and high-capacity interconnect applications. We present detailed design, fabrication, and characterization of a silicon integrated chip based on wavelength division multiplexing. In such a chip, an array of eight high-speed silicon optical modulators is monolithically integrated with a silicon-based demultiplexer and a multiplexer. We demonstrate that each optical channel operates at 25 Gb/s. Our measurements suggest the integrated chip is capable of transmitting data at an aggregate rate of 200 Gb/s. This represents a key milestone on the way for fabricating terabit per second transceiver chips to meet the demand of future terascale computing.      

An optical fiber sensor for biofilm measurement using intensitymodulation and image analysis

The development of an online sensor to determine the fouling properties of aqueous process fluids is described. A plastic optical fiber with its cladding removed over a sensitized length measures the growth of biofilms in a closed loop water process system by evanescent field attenuation and intensity modulation. The sensor detects material build-up at the core-cladding interface by means of refractive index modulation. A theoretical model is developed showing that an increase in cladding refractive index reduces the intensity of light propagating in the fiber and attenuates the high order modes. The modulation mechanism of the sensor is demonstrated using a CCD camera and frame grabber to record the far field modal distribution of the fiber, when the outer modes are excited. The intensity distribution changes spatially in response to the biofilm deposit on the sensor, indicating evanescent field attenuation     

Analysis of unbounded and bounded circuits considering finite substrate extent and inhomogeneous dielectric layer

A generalized method of lines algorithm is presented for characterizing unbounded and bounded circuits. Finite substrate extent and inhomogeneous dielectric layers are rigorously considered in this field‐based model. Radiating properties of unbounded regular and irregular microstrip patch resonators and arrays are studied with emphasis on effects of mutual coupling and finite dielectric extent on complex resonant frequencies. In addition, unbounded loss effects for microstrip open‐end and 90° angular bend deposited on finite substrate as well as chip‐to‐chip discontinuities are also investigated. Our developed algorithm incorporates an absorbing boundary condition using the Padé approximation to simulate any potential radiation and leakage losses for resonator structures while an improved lossy absorbing boundary condition (LABC) that can handle both propagating and evanescent waves is used to determine the unbounded effects for waveguiding structures. Results indicate interesting properties of the finite extent of dielectric substrate on resonance and radiation characteristics, and also on unbounded radiation and leakage losses. Copyright © 2000 John Wiley & Sons, Ltd.     

Monolithically integrated active components: a quantum-well intermixing approach

As the demand for bandwidth increases, the communications industry is faced with a paradigm shift. Photonic integration is a key technology that will facilitate this shift. Monolithic integration allows for the realization of highly functional optical components, called photonic integrated circuits. Herein, we discuss the advantages and potential applications of photonic integration, and after a brief overview of various integration techniques, provide a detailed look at our work using a novel quantum well intermixing processing platform.     

Design of high-Q microcavities for proposed two-dimensional electrically pumped photonic crystal lasers

Electrically pumped photonic crystal lasers are of practical importance for future integrated photonic circuit systems. This paper proposes a methodology for achieving high quality (Q) factor photonic crystal defect cavities that allow current injection into their active regions. It is shown that by combining certain high Q-factor photonic crystal cavity designs with the technique of wet oxidation of (Al,Ga)As layers, Q factors of up to /spl sim/10/sup 4/ can be obtained within the scope of existing semiconductor planar process technology. The proposed device structures can be optimized through use of finite-difference time-domain methods to obtain optimal separation of the high refractive index substrate from the active core; furthermore, the effects of the top ohmic contact layer, the top and bottom cladding layers of the structure, and the current injection opening can be taken into account to achieve an optimal Q factor in electrically pumped lasers.     

Focused ion beam nanopatterning for optoelectronic device fabrication

Recent photonic device structures, including distributed Bragg reflectors (DBRs), one-dimensional (1-D) or two-dimensional (2-D) photonic crystals, and surface plasmon devices, often require nanoscale lithography techniques for their device fabrication. Focused ion beam (FIB) etching has been used as a nanolithographic tool for the creation of these nanostructures. We report the use of FIB etching as a lithographic tool that enables sub-100-nm resolution. The FIB patterning of nanoscale holes on an epitaxially grown GaAs layer is characterized. To eliminate redeposition of sputtered materials during FIB patterning, we have developed a process using a dielectric mask and subsequent dry etching. This approach creates patterns with vertical and smooth sidewalls. A thin titanium layer can be deposited on the dielectric layer to avoid surface charging effects during the FIB process. This FIB nanopatterning technique can be applied to fabricate optoelectronic devices, and we show examples of 1-D gratings in optical fibers for sensing applications, photonic crystal vertical cavity lasers, and photonic crystal defect lasers.     

Near-field optical studies of semiconductor heterostructures andlaser diodes

Near-field optical microscopy and spectroscopy is emerging as a powerful tool for the investigation of semiconductor structures. Tunable excitation combined with sub-wavelength resolution is providing an unprecedented level of detail on the local optical properties of semiconductor structures. Recent near-field optical studies have addressed issues of laser diode mode profiling, minority carrier transport, near-field photocurrent response of quantum-well structures and laser diodes, imaging of local waveguide properties, and location and studies of dislocations in semiconductor thin films. We present results on the intrinsic resolution limitations of near-field photoconductivity in quantum-well heterostructures and demonstrate that the resolution depends strongly on the amount of evanescent and propagating field components in the semiconductor. Spectroscopic mode-profiling of high-power laser diode emission details the spatial dependence of multiple spectral modes. This paper presents an overview of NSOM techniques for semiconductor systems, its limitations, and present status     

Modelling of printed discontinuities on open microstrip lines by mode matching techniques

The dynamic analysis of discontinuities in printed circuits has been performed using the mode matching technique. This study concerns the open end of microstrip lines and suspended microstrip lines. The fields on either side of the discontinuity are described by means of the continuous (radiated and evanescent) and guided modes of the structure. The conditions of continuity of the electromagnetic fields are then applied in the plane of the discontinuity. By taking into account the relations of orthogonality of the modes of the same region, a system of coupled Fredholm integral equations is obtained and solved by the iterative method of Neumann's series. The study calls for the use of the continuous spectrum of microstrip lines, which can be obtained analytically only after a great amount of calculation and CPU time. Thus, the first approach consists in neglecting this continuous spectrum. This gives accurate results for the reflection coefficient but it is not sufficient for the derivation of the radiation pattern. So, two simple models for the continuous spectrum, both based on the physical behaviour of such discontinuities, are considered and discussed. © 1997 John Wiley & Sons, Ltd.     

Advances in silicon-on-insulator optoelectronics

Recent developments in silicon based optoelectronics relevant to fiber optical communication are reviewed. Silicon-on-insulator photonic integrated circuits represent a powerful platform that is truly compatible with standard CMOS processing. Progress in epitaxial growth of silicon alloys has created the potential for silicon based devices with tailored optical response in the near infrared. The deep submicrometer CMOS process can produce gigabits-per-second low-noise lightwave electronics. These trends combined with economical incentives will ensure that silicon-based optoelectronics will be a player in future fiber optical networks and systems     

A quantum-well-intermixing process for wavelength-agile photonic integrated circuits

Wavelength-agile photonic integrated circuits are fabricated using a one-step ion implantation quantum-well intermixing process. In this paper, we discuss, the issues in processing optimized widely tunable multisection lasers using this technique and present the results achieved using this process. This quantum-well intermixing process is general in its application and can be used to monolithically integrate a wide variety of optoelectronic components with widely tunable lasers.     

Active integrated antennas

Even with microwave techniques, however, signal losses in materials and decreased gain and power from solid-state devices become significant obstacles to creating low-cost, high-frequency wireless systems. Perhaps the most dramatic effect occurs when a circuit component becomes a significant fraction of a wavelength. At this point it may begin to function well as an antenna. For microwave and mm-wave signals, this can occur with circuits that are only centimetres in size. With conventional circuit techniques, this radiation may cause drastic signal losses, spurious coupling between circuit elements, and radio interference with other. However, with new techniques, it is possible to create circuits that use these effects to advantage. Known as active integrated antennas, these circuits have sparked interest as possible solutions to problems in designing the next-generation wireless systems. Active integrated antennas are a combination of solid-state devices and circuits with printed antenna structures. They comprise integrated radio-system elements that are fabricated using inexpensive printed-circuit techniques     

A high-speed 32-channel CMOS VCSEL driver with built-in self-testand clock generation circuitry

This paper describes the design, electrical, and optical test results for a high-speed 32-channel CMOS vertical-cavity surface emitting laser (VCSEL) driver integrated circuits with built-in self-test and clock generation circuitry. The circuit design and silicon parts are available to the research community through the Consortium for Optical and Optoelectronic Technologies in Computing (CO-OP) and the Optoelectronics Industry Association (OIDA). This device is specifically targeted at users building VCSEL-based smart photonic system demonstrators. A ten-channel version of this driver chip is also available with the same functionality and performance     

Modelling Photonic Band-Gap Structures having Multiple Defects

A powerful and efficient method based on the Bloch theorem, widely used in solid state physics to model electrons running into a periodic lattice, and recently applied by the authors to model defect-free optical periodic structures, is used to characterize photonic bandgap (PBG) structures incorporating multiple defects, having arbitrary shape and dimensions. The importance of the defect-mode characterization in PBG materials is due to the intensive use of defects for light localization to design optical and microwave devices giving high performances.     

Plasma-induced quantum well intermixing for monolithic photonic integration

Plasma-induced quantum well intermixing (QWI) has been developed for tuning the bandgap of III-V compound semiconductor materials using an inductively coupled plasma system at the postgrowth level. In this paper, we present the capability of the technique for a high-density photonic integration process, which offers three aspects of investigation: 1) universality to a wide range of III-V compound material systems covering the wavelength range from 700 to 1600 nm; 2) spatial resolution of the process; and 3) single-step multiple bandgap creation. To verify the monolithic integration capability, a simple photonic integrated chip has been fabricated using Ar plasma-induced QWI in the form of a two-section extended cavity laser diode, where an active laser is integrated with an intermixed low-loss waveguide.