低有效模场面积的高双折射PCF的优化设计

设计了一种高双折射低有效模场面积的光子晶体光纤(PCF)。利用有限元法依次研究了三层椭圆孔光子晶体光纤在纤芯中引入矩形排列的四个小椭圆孔,及其基础上再引入一个中心椭圆缺陷孔的五个小椭圆孔情况下的双折射和有效模场面积。研究表明:纤芯区域矩形排列的小椭圆孔主导了光子晶体光纤的双折射,中心椭圆缺陷空气孔中填充高折射率的材料可以获得更高的双折射和更低的有效模场面积,且波长1.55μm处光纤双折射达到了5.49×10-2,x与y偏振有效模场面积分别低至3.05μm2、2.42μm2。     

高对称性模场分布的高双折射光子晶体光纤

设计了一种具有高对称性模场分布的高双折射光子晶体光纤(PCF)结构,由尺寸相同的椭圆空气孔菱形排列组成。利用全矢量有限元法对该种结构光子晶体光纤的基模场分布、有效模场面积、双折射和色散进行数值分析,所得结果与相同结构参数的圆形空气孔光子晶体光纤进行比较。这两种光纤的模场均具有高对称性,近似圆形,并且易于与光器件中其他光纤耦合。椭圆空气孔光子晶体光纤的双折射可达10-3。     

双孔单元四边形晶格光子晶体光纤特性的研究

为了获得双空气孔单元四边形晶格排列光子晶体光纤的光学特性，采用有限元分析法对该型光纤进行了数值模拟计算，得到了该型光纤的双折射、限制损耗、偏振拍长及色散特性结果。结果表明，与椭圆空气孔方形晶格排列光子晶体光纤相比，在相同的空气占空比条件下，双空气孔单元方形晶格排列光子晶体光纤可以获得更高的双折射特性，达到10-2量级；该型光纤两偏振模的限制损耗差可达103量级。该型光纤易于制造，在光纤通信及光纤传感等领域有一定的应用前景。     

宽带色散平坦光子晶体光纤的优化设计与特性分析

设计了一种第一层为椭圆空气孔缺陷的宽带色散平坦光子晶体光纤,借助全矢量有限元法对这种结构的光子晶体光纤的色散特性、模场面积、双折射和限制损耗特性进行了数值模拟.结果表明改进的光子晶体光纤的色散曲线可以在很宽的波长范围内保持色散平坦并具有较低的色散值,其模场面积较未改进光子晶体光纤的模场面积要大,光纤的限制损耗变小且双折射也相当小.主要分析了这种光纤的结构参数的优化后,光纤的色散特性、有效模面积、双折射以及限制损耗特性的变化规律,最终设计了在1 200～1 800 nm波长范围内超平坦色散的光子晶体光纤.     

椭圆芯扁六角聚合物光子晶体光纤的偏振特性

采用全矢量定域基函数模型,以聚合物PMMA为基材,研究了椭圆芯三角点阵扁六角结构光子晶体光纤(Photonic crystal fibers,PCFs)的偏振特性,分析了其相位模双折射和群模双折射与相对孔间隔比的依赖关系,并与椭圆芯三角点阵正六角结构PCFs的研究结论进行比较;研究发现,椭圆芯扁六角结构PCF的偏振特性强烈的依赖于光纤的结构参数,由于色度色散的存在,在短波长段,群双折射远远高于相位模双折射,通过适当调节光纤的相对孔径和相对孔间隔比,有望在给定波长实现高双折射和零偏振模色散单模运行.该研究为高双折射聚合物光子晶体保偏光纤的制备提供了理论依据.     

椭圆孔正方形点阵聚合物光子晶体光纤偏振特性

以聚合物为基材,设计了一种单模零走离参数的高双折射光子晶体光纤,该光纤具有椭圆孔正方形点阵,基于全矢量平面波方法,对其传输模场和偏振特性进行了数值模拟。结果发现,与传统的光子晶体光纤相比,该光纤具有更大的模式双折射和走离参数,当增长光纤结构参数椭圆孔长短轴之比η时,双折射明显增强并高达3.5×10-2,走离参数在低频区出现零走离点,这为在该光纤中即保持高双折射又实现零走离单模运转提供了可能。     

椭圆孔正方形点阵单偏振单模光子晶体光纤的设计

设计了一种椭圆空气孔正方形点阵单偏振单模光子晶体光纤,并以聚甲基丙烯酸甲酯为基材,利用基于棱边/节点混合元的全矢量有限元法对该光纤进行了数值模拟。结果发现,其偏振模场、快轴模和慢轴模截止波长完全依赖于光纤的结构参数;通过优化光纤的结构参数,发现该光纤传输基模的一个偏振态（慢轴模）在0.62μm至0.70μm可见光波长范围内;若调整该光纤结构具有9圈椭圆空气孔时,其偏振模约束损耗在波长0.65μm处可以降至0.13dB/m。该聚合物基低损耗单偏振单模光子晶体光纤可以有效消除传统保偏光纤固有的偏振串扰和偏振模色散。     

椭圆孔微纤芯光子晶体光纤的数值模拟

提出了一种在纤芯引入四个近矩形排列的椭圆空气孔,包层空气孔呈阶梯结构的高双折射光子晶体光纤,采用全矢量有限元方法,对光纤基模的模场分布、双折射、色散、限制损耗、有效模面积及非线性系数等特性进行了数值模拟.这种设计为获得高双折射光子晶体光纤提供了一种新的方法,为改善光子晶体光纤其他性能(如色散、非线性特性)提供了一种新的...     

一种近红外波段的高双折射高非线性光子晶体光纤

提出了一种具有中心缺陷孔的新型非对称椭圆光子晶体光纤,采用全矢量有限元法研究了其双折射、色散和非线性等特性。通过改变第一层椭圆孔的角度,加强了结构的双折射性能,同时还能改善结构的色散表现。分析计算结果得出,设计合适的结构参数可在波长1.55μm处获得3.05×10~(-2)的高双折射,同时在X和Y偏振方向获得较高非线性系数。此外,在保持高双折射的同时,此PCF也可获得1 000~1 550 nm近550 nm的负色散平坦区。该新型近红外波段的高双折射高非线性负平坦色散的光子晶体光纤在偏振控制、非线性光学及光纤通信等领域具有广泛的应用前景。     

一种新型混合包层结构高双折射光子晶体光纤

针对光子晶体光纤中高双折射的应用需求,提出了一种基于全内反射导光机制的新型混合包层结构光子晶体光纤,采用全矢量有限元法分析了结构参数对该光纤双折射的影响,以及采用全矢量有限元软件对该光纤结构进行了仿真。仿真结果表明,通过调整包层椭圆孔的椭圆率和孔间距等参数,该结构的光子晶体光纤在1.55 μm波长处可实现10-2量级的高双折射。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.