镍-磷（Ni—P）电阻器的电阻变化的定量分析

在PCB上镀复形成电阻器的电阻性镍-磷（Ni-P）合金可以制造嵌入电阻器。这样沉积的Ni-P合金电阻器具有不良的电阻公差,要求采用旨在满足规格的昂贵的激光修整进行调节。如果无须激光调整即可降低公差,则可降低电阻器成本。本文中,变化影响图形精度、镀层和薄膜电阻率的一组参数,以评价它们对化学镀Ni-P电阻器的电阻公差的影响。还表征了基材对薄膜电阻率变化的影响。还讨论了无须激光调整可以获得低公差的Ni-P电阻器的设计指南。     

Quantitative Analysis of Resistance Tolerance of Polymer Thick Film Printed Resistors

Low cost methodologies of resistor fabrications are needed for cost effective embedding of resistors into polymeric substrates. Polymer thick film resistors (PTFRs) are low temperature processable, low cost resistors with a wide resistivity range. The electrical resistance variation of these resistors is in the range of around plusmn20% after deposition and trimming procedure is employed to tune the resistances to meet specifications. This adds to the cost and complicates the fabrication process when the resistors are embedded. In this study, the influences of PTFRs geometries on the resistance tolerances were investigated. Results indicated that the resistance accuracy of stencil printed resistors was markedly higher than that of the screen-printed resistors. The screen-printed resistor edge geometries were observed to be rough. Finite element method analyses revealed that the resistance tolerances were associated with edge roughness. Remedies to reduced variations were proposed and the relationship between resistance tolerances and aperture orientations was also outlined     

硅制电晶体管取代硫化镉(CdS)光敏电阻器

北京信威通信技术股份有限公司在其最新的McWiLL基站设计中，选用了比克奇公司（picoChip Design Limited）的PC203作为基带处理器。McWiLL（多载波无线信息本地环路）是由中国自主研发的移动宽带接入（BWA）标准，专门针对特别广域的网络覆盖而进行了优化。McWiLL将为2008年北京奥运会部署。     

RuO_2厚膜电阻体的阻值与TCR的关系

ＲｕＯ_２厚膜电阻体方阻Ｒ_ｓ、基片的热膨胀系数ａ_（ｓｕｂ）与ＲｕＯ_２厚膜电阻体的电阻温度系数ＴＣＲ间有一定的关系，讨论了从电阻体的Ｒ_ｓ计算其ＴＣＲ之方法。     

Nonlinear Biasing Resistors for Microwave Tunnel-Diode Oscillators (Correspondence)

By using a nonlinear rather than a linear stabilizing resistor in tunnel-diode oscillator and amplifier circuits, the dc power dissipation in the resistor may be reduced by a factor of 3 for typical germanium tunnel diodes, and by a factor of 6 for typical gallium arsenide tunnel diodes. At the same time ac loading by the resistor is reduced. Such nonlinear stabilizing resistors may consist of reverse- or forward-biased heavily doped pn junctions.     

外接电阻法求单口网络的等效电阻

以具体电路为例，介绍一种求单口网络等效电阻的新方法，即外接电阻法。并在理论上对其正确性予以证明。     

Resistance Changes on Absorption and Desorption of Hydrogen from Evanohm Resistors

Hydrogen gas, the foaming agent in RTV-5370 silicone foam encapsulating plastic, caused resistance increases in thin-film Evanohm resistors. The hydrogen is a byproduct of the polymerization of hydrosiloxane groups with polymeric hydroxy functional siloxanes. The hydrogen gas is produced over an extended time period and trapped in the sealed circuit box. The gas then diffuses through the silicone resin coating and protective vinyl shrink tubing surrounding the metal film, with a rate that increases with pressure and temperature. The polymerization reaction of the foam can be driven to completion by heating in air at 100° C for 24 hours. Out-diffusion of the hydrogen gas from the affected resistors will occur on heating in air at 100° C for 48 hours or more. By fitting analytic solutions of the diffusion equation to the observed in- and out-diffusion data, the diffusion coefficient for the encapsulant surrounding the resistor film was found to be D = 3 x 10-?4 exp (?0.28 eV/kT) cm2/s. The resistance increase is caused by the high solubility of hydrogen in nickel. The hydrogen increases the residual resistivity but not the thermal coefficient of resistance (TCR) of the film. The sensitivity of nickel-containing resistor materials, such as Evanohm or Nichrome, to hydrogen suggests that hydrogen-producing encapsulants should not be used with nonhermetic devices and that no hydrogen should be included in the protective atmosphere of hermetically sealed devices.     

电容器绝缘电阻测量的瞬态定量分析

在电容器未经研究充电和预充电两种超始条件下，对绝缘电阻的测量值进行瞬态分析，定量地导出两种起始条件下测量值与仪器内阻、电容器固有特性之间的关系。为分析测量结果和制定标准提供依据。     

电源电子滤波电阻作用的定量分析

通过定量分析分析电源电子滤波电阻的作用,得到了该电阻应选定在最佳值上才能获得最好综合滤波效果的结论,从而为电源电子滤波电路的设计等提供了又一指导依据。     

Environmental Qualification Testing and Failure Analysis of Embedded Resistors

Embedding passive components (capacitors, resistors, and inductors) within printed wiring boards (PWBs) is one of a series of technology advances enabling performance increases, size and weight reductions, and potentially economic advantages in electronic systems. This paper explores the reliability testing and subsequent failure analysis for laser-trimmed Gould subtractive nickel chromium and MacDermid additive nickel phosphorous embedded resistor technologies within a PWB. Laser-trimmed resistors that have been “reworked” using an inkjet printing process to add material to their surface to reduce resistance have also been considered. Environmental qualification testing performed included: thermal characterization, stabilization bake, temperature cycling, thermal shock and temperature/humidity aging. In addition, a pre/post-lamination analysis was performed to determine the effects of the board manufacturing process on the embedded resistors. A failure analysis consisting of optical inspection, scanning acoustic microscope (SAM) and environmental scanning electron microscope (ESEM) imaging, and PWB cross-sectioning was employed to determine failure mechanisms. All the embedded resistors were trimmed and the test samples included resistors fabricated both parallel and perpendicular to the weave of the board dielectric material. Material stability assessment and a comparison with discrete resistor technologies was performed.     

战场电磁兼容定量分析研究

战场上各种无线电电子设备的大量增加,发射的功率不断提高,使占用的频谱不断扩展与无线电电子设备的密度增大,因此战场上无线电设备(系统)间的电磁干扰问题越来越严重,解决战场电磁兼容问题已经刻不容缓。通过对干扰的3个要素模型,对战场电磁兼容情况进行定量分析,得到战场电磁兼容性的结论,为战场电磁兼容控制提供数据基础。     

Improvement of Temperature Coefficient of Resistance by Co-Implantation of Argon or Xenon or Fluorine in Boron Implanted Polysilicon Resistors

This paper proposes a new method to decrease the absolute value of temperature coefficient of resistance (TCR) in P-type boron implanted polysilicon resistors, at a given intermediate sheet resistance values, by selecting an optimized combination of boron doping implant conditions with co-implantation conditions. The co-implantation ion species that were investigated are fluorine, argon and xenon. Each of the co-implantation species was studied at three different co-implantation conditions and two different boron doping implant conditions of dose and energy.      

用电阻补偿效应分析RTD表观正阻产生的物理机制

表观正阻是RTDI-V特性上峰值电压VP大于谷值电压VV的现象。以前的观念认为它来源于RTD和其负载电阻RL构成的锁定单元,但未阐明负载电阻产生的物理过程。对表观正阻现象产生的物理机制进行了更进一步的研究,发现了RTD串联电阻增大时形成RL/RTD锁定单元的物理过程,为建立APR的物理模型奠定了基础。     

基于有限元法的激光横向刻蚀路径对片阻阻值影响的研究

应用激光对片阻阻值进行修调时,垂直于电流方向的横向刻蚀对片阻的阻值影响较大,合理设计横向刻蚀的起刻位置和刻蚀长度能够以较低成本提高激光调阻精度及调阻效率.应用有限元法可得激光横向刻蚀长度和横向起刻位置对片阻阻值影响的定性、定量结论.经实验验证:应用有限元法得到的横向刻蚀路径对阻值影响的定性结论与实验结论一致、定量结论的计算偏差不大于2%,能够为提高调阻精度和调阻效率提供控制依据.     

碱性条件下硬盘NiP基板抛光速率正交试验分析

利用单面抛光机和SiO2碱性抛光液进行了以硬盘NiP基板CMP去除速率为考核指标的工艺试验.针对抛光速率是受各个工艺因素共同影响这一特性,应用正交试验方法分析了CMP中5个重要工艺参数(抛光压力、抛光液流量、抛光盘转速、抛光液浓度,氧化剂质量分数)对硬盘NiP基板抛光去除速率的影响规律,并结合抛光机理对其进行了分析.试验分析表明,抛光压力为0.2 MPa,抛光液流量为500 mL/min,抛光盘转速为50 r/min,磨料质量分数为20%,氧化剂体积分数为0.3%时,可以得到较高的抛光速率,为740 nm/min.     

单片集成电路中镍—铬电阻的制作

本文介绍单片集成电路中采用高精度、高可靠性和低温度系数镍-铬金属薄膜电阻代替扩散电阻的情况,详细论述镍-铬电阻的制作工艺、操作过程及工艺中的注意事项。实验表明,严格控制工艺条件是保证制取优值镍-铬电阻的关键。     

Nighttime Variations of Extremely Low Frequency (ELF) Signal Strengths in Connecticut

A limited amount of extremely low frequency (ELF) horizontal magnetic field strength measurements have been taken in Connecticut during the past 3 years. The transmission source for these 1.6 Mm range measurements was the U. S. Navy ELF Wisconsin Test Facility. The principal result obtained from these measurements is that there are considerable variations in the ELF nighttime propagation parameters.     

片式膜电阻器的典型失效模式、机理及原因分析

首先,对片式膜电阻器的结构和工艺流程进行了简单的介绍;然后,对片式膜电阻器典型的失效模式和失效机理进行了总结;最后,通过案例,对片式膜电阻器两种典型的失效现象的原因进行了分析,对于相关工作人员了解片式膜电阻器的失效原因和机理,从而改善其工艺过程具有一定的参考价值.     

镍铬和氮化钽膜电阻在通信应用中的比较

通信产业的成功依赖于通信服务的可靠性,然而,通信设备制造商却容易忽视无源器件的可靠性,镍铬和氮化钽两种使用较多的片状电阻具有不同的性能。