Schottky barrier-based silicon nanowire pH sensor with live sensitivity control

We demonstrate a pH sensor based on ultrasensitive nanosize Schottky junctions formed within bottom-up grown dopant-flee arrays of assembled silicon nanowires. A new measurement concept relying on a continuous gate sweep is presented, which allows the straightforward determination of the point of maximum sensitivity of the device and allows sensing experiments to be performed in the optimum regime. Integration of devices into a portable fluidic system and an electrode isolation strategy affords a stable environment and enables long time robust FET sensing measurements in a liquid environment to be carried out. Investigations of the physical and chemical sensitivity of our devices at different pH values and a comparison with theoretical limits are also discussed. We believe that such a combination of nanofabrication and engineering advances makes this Schottky barrier-powered silicon nanowire lab-on-a-chip platform suitable for efficient biodetection and even for more complex biochemical analysis.     

Large-energy-shift photon upconversion in degenerately doped InP nanowires by direct excitation into the electron gas

Realizing photon upconversion in nanostructures is important for many next- generation applications such as biological labelling, infrared detectors and solar cells. In particular nanowires are attractive for optoelectronics because they can easily be electrically contacted. Here we demonstrate photon upconversion with a large energy shift in highly n-doped InP nanowires. Crucially, the mechanism responsible for the upconversion in our system does not rely on multi-photon absorption via intermediate states, thus eliminating the need for high photon fluxes to achieve upconversion. The demonstrated upconversion paves the way for utilizing nanowires--with their inherent flexibility such as electrical contactability and the ability to position individual nanowires--for photon upconversion devices also at low photon fluxes, possibly down to the single photon level in optimised structures.     

Bottom-up synthesis of ultrathin straight platinum nanowires: Electric field impact

We present a study of the electric field effect on electrochemically grown ultrathin, straight platinum nanowires with minimum diameter of 15 nm and length in the micrometer range, synthesized on a silicon oxide substrate between metal electrodes in H₂PtCl₆ solution. The influence of the concentration of the platinumcontaining acid and the frequency of the applied voltage on the diameter of the nanowires is discussed with a corresponding theoretical analysis. We demonstrate for the first time that the electric field profile, provided by the specific geometry of the metal electrodes, dramatically influences the growth and morphology of the nanowires. Finally, we provide guidelines for the controlled fabrication and contacting of straight, ultrathin metal wires, eliminating branching and dendritic growth, which is one of the main shortcomings of the current bottom-up nanotechnology. The proposed concept of self-assembly of thin nanowires, influenced by the electric field, potentially represents a new route for guided nanocontacting via smart design of the electrode geometry. The possible applications reach from nanoelectronics to gas sensors and biosensors.      

Polymer nanowire vertical transistors

By utilizing poly（3-hexylthiophene） （P3HT） polymer nanowires with diameters of -15 nm as the vertical channel material, a polymer nanowire vertical transistor has been demonstrated for the first time. The P3HT nanowires were characterized by absorption spectroscopy and scanning electron microscopy. A saturated output current was created by increasing the thickness of the polymer layers between the electrodes through several spin-coating cycles of the polymer nanowires prepared in a marginal solvent. The carrier mobility was also increased through utilization of polymer nanowires with strong interchain interactions. By introducing a small hole injection barrier between the emitter and semiconducting polymer, an on/off current ratio of 1,500 was obtained. The operating voltage is less than 2 V.     

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-induced by means of Ni seeds. Under identical growth conditions of temperature and V/III ratio, both types of GaN nanowires are of wurtzite structure elongated in the Ga-polar direction and are constricted by M-plane facets. However, the catalyst-induced nanowires contain many more basal-plane stacking faults and their photoluminescence is weaker. These differences can be explained as effects of the catalyst Ni seeds.      

Ultraviolet photoconductance of a single hexagonal WO3 nanowire

The ultraviolet (UV) photoconductance properties of a single hexagonal WO₃ nanowire have been studied systematically. The conductance of WO₃ nanowires is very sensitive to ultraviolet B light and a field-effect transistor (FET) nanodevice incorporating a single WO₃ nanowire exhibits excellent sensitivity, reversibility, and wavelength selectivity. A high photoconductivity gain suggests that WO₃ nanowires can be used as the sensing element for UV photodetectors. Measurements under UV light in vacuum show that the adsorption and desorption of oxygen molecules on the surface of the WO₃ nanowire can significantly influence its photoelectrical properties. The WO₃ nanowires have potential applications in biological sensors, optoelectronic devices, optical memory, and other areas.      

A comparative study of the effect of gold seed particle preparation method on nanowire growth

Highly controlled particle-assisted growth of semiconductor nanowires has been performed for many years, and a number of novel nanowire-based devices have been demonstrated. Full control of the epitaxial growth is required to optimize the performance of devices, and gold seed particles are known to provide the most controlled growth. Successful nanowire growth from gold particles generated and deposited by various different methods has been reported, but no investigation has yet been performed to compare the effects of gold particle generation and deposition methods on nanowire growth. In this article we present a direct comparative study of the effect of the gold particle creation and deposition methods on nanowire growth characteristics and nanowire crystal structure, and investigate the limitations of the different generation and deposition methods used.      

Graphene-CdSe nanobelt solar cells with tunable configurations

We have combined two planar nanostructures, graphene and CdSe nanobelts, to construct Schottky junction solar cells with open-circuit voltages of about 0.5 V and cell efficiencies on the order of 0.1%. By covering transparent graphene or carbon nanotube (CNT) films on selected positions along macroscopically long CdSe nanobelts, we have demonstrated the fabrication of active solar cells with many different configurations and parallel connections from individual or multiple assembled nanobelts. The graphene-CdSe nanobelt solar cells reported here show a great flexibility in creating diverse device architectures, and might be scaled up for cell integration based on assembled nanobelt arrays and patterned graphene (or CNT) films.      

Structural and optical verification of residual strain effect in single crystalline CdTe nanowires

Single crystalline CdTe nanowires have been synthesized using Au-catalyzed chemical vapor deposition. X-ray diffraction reveals the existence of non- negligible inhomogeneous compressive strain in the nanowires along the 〈111〉 growth direction. The effect of the strain on the electronic structure is manifested by the blue-shifted and broadened photoluminescence spectra involving shallow donor/acceptor states. Such residual strain is of great importance for a better understanding of the optical and electrical behaviors of various semiconductor nanomaterials as well as for device design and applications.     

Bivariate-continuous-tunable interface memristor based on Bi2S3 nested nano-networks

A memristor that can emulate biological synapses is a promising basic-processing unit in neural-network computation. Here we propose a new-conceptual memristor based on a memoristive interface composed of two types of non-memristive materials, successfully realizing continuously tunable resistance controlled by both voltage （current） and applied time of a single pulse with a swift response comparable with synapses. The brain-like memorizing capability of the memristor is demonstrated. The memoristive mechanism in the interface is thought to be dominated by a Schottky barrier tuned by the capture/release of the carriers in interface traps with dispersive energy.     

Synthesis and purification of long copper nanowires. Application to high performance flexible transparent electrodes with and without PEDOT:PSS

We demonstrate the hydrothermal synthesis of long copper nanowires based on a simple protocol. We show that the purification of the nanowires is very important and can be achieved easily by wet treatment with glacial acetic acid. Fabrication of random networks of purified copper nanowires leads to flexible transparent electrodes with excellent optoelectronic performances （e.g., 55 Ω/sq. at 94% transparency）. The process is carried out at room temperature and no post-treatment is necessary. Hybrid materials with the conductive polymer PEDOT：PSS show similar properties （e.g., 46 Ω/sq, at 93% transparency）, with improved mechanical properties. Both electrodes were integrated in capacitive touch sensors.     

Reliability tests and improvements for Sc-contacted n-type carbon nanotube transistors

Scandium (Sc) contacted n-type carbon nanotube (CNT) field-effected transistors (FETs) with back and top-gate structure have been fabricated, and their stability in air were investigated. It was shown that oxygen and water molecules may affect both the nanotube channel and Sc/nanotube contacts, leading to deteriorated contact quality and device performance. These negative effects associated with the instability of n-type carbon nanotube FETs can be eliminated through passivating the CNT devices by a thin layer of atomic-layer-deposition grown Al₂O₃ insulator. After passivation, the n-type carbon nanotube FETs are shown to exhibit excellent atmosphere stability even after being tested and exposed to air for over 146 days, and then much smoother output characteristics and reduced gate voltage hysteresis from 1 to 0.1 V were demonstrated when compared with devices without passivation. Lasting power-on tests were also performed on the passivated CNT FETs under large gate stress and high drain current in air for at least 10 h, revealing null device degradation and sometimes even improved performance. These results promise that passivated CNT devices are reliable in air and may be used in practical applications.      

Growth of silicon nanowires in aqueous solution under atmospheric pressure

A new method for growing silicon nanowires is presented. They were grown in an aqueous solution at a temperature of 85℃ under atmospheric pressure by using sodium methylsiliconate as a water-soluble silicon precursor. The structure, morphology, and composition of the as-grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray spectrometry. It was also confirmed by X-ray powder diffraction and Raman spectroscopy that the silicon nanowire has a hexagonal structure. It was possible to grow the crystalline silicon nanowires at low temperature under atmospheric pressure because potassium iodide, which was used as a gold etchant, sufficiently increased the surface energy and reactivity of gold as a metal catalyst for the reaction of the Si precursor even at low temperature.     

Optical haze of transparent and conductive silver nanowire films

Contemporary nanostructured transparent electrodes for use in solar cells require high transmittance and high conductivity, dictating nanostructures with high aspect ratios. Optical haze is an equally important yet unstudied parameter in transparent electrodes for solar cells that is also determined by the geometry of the nanostructures that compose the electrode. In this work, the effect of the silver nanowire diameter on the optical haze values in the visible spectrum was investigated using films composed of wires with either small diameters (～60 nm) or large diameters (～150 nm). Finite difference time domain (FDTD) simulations and experimental transmittance data confirm that smaller diameter nanowires form higher performing transparent conducting electrode (TCE) films according to the current figure of merit. While maintaining near constant transmittance and conductivity for each film, however, it was observed experimentally that films composed of silver nanowires with larger diameters have a higher haze factor than films with smaller diameters. This confirms the FDTD simulations of the haze factor for single nanowires with similarly large and small diameters. This is the first record of haze properties for Ag NWs that have been simulated or experimentally measured, and also the first evidence that the current figure of merit for TCEs is insufficient to evaluate their performance in solar cell devices.      

Cotunneling transport in ultra-narrow gold nanowire bundles

We investigate the charge transport in close-packed ultra-narrow （1.5 nm diameter） gold nanowires stabilized by oleylamine ligands. We give evidence of charging effects in the weakly coupled one-dimensional （1D） nanowires, monitored by the temperature and the bias voltage. At low temperature, in the Coulomb blockade regime, the current flow reveals an original cooperative multi-hopping process between 1D-segments of Au-NWs, minimising the charging energy cost. Above the Coulomb blockade threshold voltage and at high temperature, the charge transport evolves into a sequential tunneling regime between the nearest- nanowires. Our analysis shows that the effective length of the Au-NWs inside the bundle is similar to the 1D localisation length of the electronic wave function （of the order of 120 nm _＋ 20 nm）, but almost two orders of magnitude larger than the diameter of the nanowire. This result confirms the high structural quality of the Au-NW segments.     

Piezotronic effect enhanced Schottky-contact ZnO micro/nanowire humidity sensors

A ZnO micro/nanowire has been utilized to fabricate Schottky-contacted humidity sensors based on a metal-semiconductor-metal （M-S-M） structure. By means of the piezotronic effect, the signal level, sensitivity and sensing resolution of the humidity sensor were significantly enhanced when applying an external strain. Since a higher Schottky barrier markedly reduces the signal level, while a lower Schottky barrier decreases the sensor sensitivity due to increased ohmic transport, a 0.22% compressive strain was found to optimize the performance of the humidity sensor, with the largest responsivity being 1,240%. The physical mechanism behind the observed mechanical-electrical behavior was carefully studied by using band structure diagrams. This work provides a promising way to significantly enhance the overall performance of a Schottky-contact structured micro/nanowire sensor.     

Fabrication of high-quality all-graphene devices with low contact resistances

All-graphene devices are new class of graphene devices with simple layouts and low contact resistances. Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. The as-fabricated graphene is free of contamination and retains the quality of pristine graphene. The contact resistance at room temperature (RT) between a bilayer graphene channel and a multilayer graphene electrode can be as low as ～5 Ω·μm, the lowest ever achieved experimentally. Our results suggest the feasibility of employing such all-graphene devices in high performance carbon-based integrated circuits.      

Repair and stabilization in confined nanoscale systems — inorganic nanowires within single-walled carbon nanotubes

Repair is ubiquitous in biological systems, but rare in the inorganic world. We show that inorganic nanoscale systems can however possess remarkable repair and reconfiguring capabilities when subjected to extreme confinement. Confined crystallization inside single-walled carbon nanotube (SWCNT) templates is known to produce the narrowest inorganic nanowires, but little is known about the potential for repair of such nanowires once crystallized, and what can drive it. Here inorganic nanowires encapsulated within SWCNTs were seen by high-resolution transmission electron microscopy to adjust to changes in their nanotube template through atomic rearrangement at room temperature. These observations highlight nanowire repair processes, supported by theoretical modeling, that are consistent with atomic migration at fractured, ionic ends of the nanowires encouraged by long-range force fields, as well as release-blocking mechanisms where nanowire atoms bind to nanotube walls to stabilize the ruptured nanotube and allow the nanowire to reform. Such principles can inform the design of nanoscale systems with enhanced resilience.      

Linear strain-gradient effect on the energy bandgap in bent CdS nanowires

Although possible non-homogeneous strain effects in semiconductors have been investigated for over a half century and the strain-gradient can be over 1% per micrometer in flexible nanostructures, we still lack an understanding of their influence on energy bands. Here we conduct a systematic cathodoluminescence spectroscopy study of the strain-gradient induced exciton energy shift in elastically curved CdS nanowires at low temperature, and find that the red-shift of the exciton energy in the curved nanowires is proportional to the strain-gradient, an index of lattice distortion. Density functional calculations show the same trend of band gap reduction in curved nanostructures and reveal the underlying mechanism. The significant linear strain-gradient effect on the band gap of semiconductors should shed new light on ways to tune optical-electronic properties in nanoelectronics.