磁场退火对FePt/Ag薄膜磁性能的影响

采用磁控溅射法室温沉积获得FePt/Ag薄膜,然后在500℃下,于真空磁退火炉中对薄膜进行退火处理。利用XRD和振动样品磁强计(VSM),研究了磁场退火对薄膜结构和磁性能的影响。结果表明,500℃零磁场退火获得了矫顽力为0.763 4 MA.m–1、平均晶粒尺寸21 nm的L10-FePt薄膜。磁场提供了FePt成核生长的驱动力,0.8 MA.m–1磁场退火后FePt的平均晶粒尺寸为26 nm,矫顽力增大至0.804 3 MA.m–1。非磁性Ag的掺杂可有效抑制磁性FePt晶粒的团聚生长。     

C/FePt/Fe纳米薄膜的微结构和磁特性

利用超高真空磁控溅射方法制备了一系列不同C层厚度的C/FePt/Fe纳米薄膜,然后进行原位高温退火。应用X射线衍射仪(XRD)分析了样品的晶体结构,利用扫描探针显微镜(SPM)观测了表面形貌和磁畴结构,通过振动样品磁强计(VSM)测量了磁性。结果表明,薄膜的微结构和磁特性随C覆盖层厚度的变化有着非常显著的变化。C的加入使样品表面更加光滑,使10 nm厚的C覆盖层样品获得了0.3 nm的粗糙度和3.8 nm的颗粒尺寸。C覆盖层减弱了磁性颗粒间的磁偶极作用,同时减弱了磁性颗粒间的交换耦合作用,提高了L10织构的有序化程度,进而增大了样品的矫顽力,矫顽力达到了987 kA/m。     

磁控溅射法制备ITO薄膜的结构及光电性能 磁控溅射法制备ITO薄膜的结构及光电性能

本文采用直流磁控溅射法在基板温度100 ℃、100%Ar气氛中制备了光电性能优良的铟锡氧化物（In2O3:SnO2= 90:10, 质量百分比）薄膜。利用XRD、AFM、SEM、多功能光栅光谱仪和四探针电阻测试仪对薄膜的结构、表面形貌、透光率和方阻进行了测定和分析,研究了溅射功率对薄膜透光率的影响。结果表明：ITO薄膜的方阻随溅射功率的增加而下降;经过热处理,ITO薄膜可见光透光率从60.4%增加到88.3%;ITO薄膜在360 nm到380 nm的紫光区域透光率最低,760 nm到800 nm的红光区域透光率达到最高。     

射频磁控溅射制备Mn掺杂ZnO薄膜的结构和铁磁性能研究

采用射频磁控溅射法制备了Mn掺杂ZnO(Zn1-x Mnx O,其中x=0,0.03,0.06)薄膜.通过X射线衍射(XRD)、拉曼光谱(Raman)、原子力显微镜(AFM)和超导量子干涉磁强计(SQUID)对薄膜结构和磁性能进行了研究.XRD和Raman研究表明,不同浓度Mn掺杂ZnO薄膜均为ZnO的六角纤锌矿结构,...     

射频磁控溅射法制备ZnO:Cu薄膜的磁性研究

ZnO films and ZnO：Cu diluted magnetic semiconductor films were prepared by radio frequency mag-netron sputtering on Si （111） substrates, with targets of ZnO and Zn0.99Cu0.01O, respectively. The plasma emission spectra were analyzed by using a grating monochromator during sputtering. The X-ray photoelectron spectroscopy measurements indicate the existence of Zni defect in the films, and the valence state of Cu is 1＋. The X-ray diffraction measurements indicate that the thin films have a hexagonal wurtzite structure and have a preferred orientation along the c-axis. The vibrating sample magnetometer measurements indicate that the sample is ferromagnetic at room temperature, and the origin of the magnetic behavior of the samples is discussed.     

纳米复合材料NiCuZn铁氧体/SiO2的结构和磁性能

以正硅酸乙酯和硝酸盐为原料,采用sol-gel法制备了Ni0.25Cu0.25Zn0.5Fe2O4/SiO2纳米复合材料。利用TGA/DTA,XRD,TEM和VSM,研究了热处理过程中,干凝胶的变化及样品的结构、晶粒尺寸和磁性。结果表明:由于样品中SiO2在高温下晶化,随着热处理温度的升高,样品的比饱和磁化强度和矫顽力先增大后减小。经900℃热处理后,样品中Ni0.25Cu0.25Zn0.5Fe2O4粒径约为30nm,比饱和磁化强度Ms为50Am2·kg–1,矫顽力Hc为4.22kA·m–1。     

磁控溅射法制备ITO薄膜的结构及光电性能

本文采用直流磁控溅射法在基板温度1OO℃、100%Ar气氛中制备了光电性能优良的铟锡氧化物(In2O3:SnO2=90:10,质量百分比)薄膜.利用XRD、AFM、SEM、多功能光栅光谱仪和四探针电阻测试仪对薄膜的结构、表面形貌、透光率和方阻进行了测定和分析,研究了溅射功率对薄膜透光率的影响.结果表明:ITO薄膜的方阻随溅射功率的增加而下降;经过热处理,ITO薄膜可见光透光率从60.4%增加到88.3%;ITO薄膜在360 nm到380 nm的紫光区域透光率最低,760 nm到800nm的红光区域透光率达到最高.     

磁控溅射法制备Ag掺杂p型ZnO薄膜的研究

采用磁控溅射法在石英玻璃基片上生长ZnO和ZnO:Ag薄膜。借助于SEM、XRD、霍尔测试、透射谱测试等方法,分析了O2气氛下退火温度对薄膜结构和电学性能的影响。霍尔测试结果表明,Ag掺杂ZnO薄膜经过600℃的O2气氛中热处理转变为p型电导。薄膜的XRD测试表明晶粒大小随退火温度升高而增大,所有薄膜样品只出现(002)衍射峰,呈现c轴取向生长。薄膜对可见光的透过率大于83%,其吸收限为378nm。     

射频磁控溅射制备的ZnMgO薄膜结构和光学性能

采用射频磁控溅射法,在石英衬底上制备了Zn1-xMgxO(x=0.00～0.16)薄膜。利用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外-可见分光光度计和光致发光(PL)光谱等分析了薄膜的结构、形貌和光学特性。结果表明:当x≤0.10时薄膜保持六角纤锌矿结构,而x=0.16时已出现MgO立方相;所有薄膜晶粒大小均匀,在100～150 nm之间;透光率在80%以上;薄膜带隙Eg与Mg含量呈线性关系;薄膜PL谱由较弱的紫外发光峰和较强的可见发光带组成,随Mg含量的增加紫外发光峰蓝移。     

DC磁控溅射制备的TiNx薄膜组分及性能分析

利用DC磁控溅射法在p-Si(111)衬底上制备了TiNx薄膜.利用X射线能谱仪(EDX)、X射线衍射(XRD)、紫外/可见分光光度计、四探针电阻率测试仪等分析了薄膜的组分、结构和光电特性.结果表明,薄膜中N/Ti原子比接近于1;衬底温度对薄膜的择优取向影响显著,240℃附近是TiNx薄膜结晶择优取向由(111)向(200)转变的临界点;薄膜在近红外波段平均反射率随衬底温度的升高,先增大后减小;薄膜的电阻率随着衬底温度的升高而显著降低.     

Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering

ZnO films and ZnO:Cu diluted magnetic semiconductor films were prepared by radio frequency magnetron sputtering on Si (111) substrates, with targets of ZnO and Zn0.99Cu0.01 O, respectively. The plasma emission spectra were analyzed by using a grating monochromator during sputtering. The X-ray photoelectron spectroscopy measurements indicate the existence of Zni defect in the films, and the valence state of Cu is 1. The X-ray diffraction measurements indicate that the thin films have a hexagonal wurtzite structure and have a preferred orientation along the c-axis. The vibrating sample magnetometer measurements indicate that the sample is ferromagnetic at room temperature, and the origin of the magnetic behavior of the samples is discussed.     

磁控溅射C/W纳米多层膜的微观结构分析

利用非平衡磁控溅射离子镀技术以纯钨靶和纯石墨靶作为溅射源制备了C/W纳米多层膜。采用X射线衍射（XRD）、X射线光电子能谱（XPS）和高分辨透射电子显微镜（HRTEM）对薄膜相组成及其微观组织结构进行了分析。结果表明：W含量约为9 at.%的C/W薄膜具有周期厚度约为6.5 nm的多层结构;沉积的W元素不以单质态存在,而是与碳元素反应生成了WC纳米晶;薄膜中的碳为非晶态,碳主要以sp2键类石墨态存在。     

磁控溅射Fe-N薄膜的微结构研究

采用薄膜技术制备的磁头具有较高的灵敏度 ,同时还可有效地缩小磁头尺寸 ,提高磁记录密度。良好的磁头材料要有较高的饱和磁化强度和较低的矫顽力。Ｆｅ Ｎ薄膜具有较好的磁学性能及比纯Ｆｅ高的耐腐蚀性和耐磨损性 ,因而近年来得到了广泛的研究。但研究者们大都致力于Ｆｅ Ｎ薄膜的制备及性能的研究[1,2 ] ,对其微观结构的研究则较少。本文利用透射电镜研究了Ｆｅ Ｎ薄膜的微观结构 ,为进一步优化性能提供依据。采用反应射频磁控溅射沉积技术合成Ｆｅ Ｎ薄膜。Ｆｅ靶纯度为 99 99%。 (10 0 )单晶Ｓｉ片作为衬底 ,表面有一氧化层存在。沉积…     

Characteristics of ZnO thin films prepared by radio frequency magnetron sputtering

We investigated in this study structural and nanomechanical properties of zinc oxide (ZnO) thin films deposited onto Langasite substrates at 200 °C through radio frequency magnetron sputtering with an radio frequency power at 200 W in an O₂/Ar gas mixture for different deposition time at 1, 2, and 3 h. Surface morphologies and crystalline structural characteristics were examined using X-ray diffraction, scanning electron microscopy, and atomic force microscopy. The deposited film featured a polycrystalline nature, with (1 0 0), (0 0 2), and (1 0 1) peaks of hexagonal zinc oxide at 31.75°, 34.35°, and 36.31°. As the deposition time increased, the ZnO film became predominantly oriented along the c-axis (0 0 2) and the surface roughness decreased. Through Berkovich nanoindentation following a continuous stiffness measurement technique, the hardness and Young’s modulus of ZnO thin films increased as the deposition time increased, with the best results being obtained for the deposition time of 3 h. In addition, surface acoustic wave properties of ZnO thin films were also presented.     

Electronic properties of zinc oxide thin films prepared by RF magnetron sputtering for varistor applications

ZnO thin films for varistor applications have been prepared by RF magnetron sputtering at a power of 0-1 kW using an argon pressure of 05 Pa. The films were polycrystalline with mean grain size typically 13 nm, and were preferentially oriented in the [002] direction. Optical absorption studies revealed a fundamental absorption edge at a wavelength of approximately 360 nm with a direct bandgap of 3.36 eV. van der Pauw measurements showed a decrease in resistivity from approximately 12ωm at thickness 50 nm to 0-5 ωm at thickness greater than 500 nm. Below 350 K the resistivity was essentially constant, while at higher temperatures an activation energy of approximately 0-2eV was observed, which was attributed to the effects of oxygen vacancies.     

MoNb薄膜直流磁控溅射制备及性能研究

以Mo-10%Nb(10%为粒子数分数)合金为靶材,采用直流磁控溅射法在钠钙玻璃基板上制备了MoNb薄膜。采用台阶仪、四探针电阻仪和AFM分别测试了Mo Nb薄膜的厚度、方块电阻及表面形貌。研究了功率密度、工艺气压及衬底温度对MoNb薄膜性能及其生长特性的影响。实验结果表明:功率密度增加2倍时,MoNb薄膜的沉积速率提升1.8倍,而电阻率降低2.3倍;工艺气压增大4倍时,MoNb薄膜的沉积速率提升1.5倍,其电阻率增大13倍。同时发现:衬底温度增加了135℃时,MoNb薄膜的表面粗糙度增加0.567nm,颗粒大小增加3.36nm。