Size-Dependent Lattice Thermal Conductivity of Nanostructured Bulk Semiconductors

Recently, nanostructuring of bulk semiconductors has emerged as an effective approach to develop high-efficiency thermoelectric materials for large-scale device applications, where the thermal conductivity reduction predominates in the enhanced figure of merit of these materials. In this work, a quantitative nanothermodynamic model was established to calculate the lattice thermal conductivity of semiconductor nanocomposites considering the interface scattering effects. It is found that the lattice thermal conductivity can be significantly reduced in nanostructured bulk semiconductors compared with their bulk counterparts. The findings in this work may provide new insights into the fundamental understanding of phonon transport in nanocomposites and also the development of high-performance thermoelectric materials.     

Two-Photon Exciton Absorption in CdSe/CdS Nanoplatelets Colloidal Solution

Semiconductors - This work devotes to investigation of two-photon absorption in a colloidal solution of nanoplatelets CdSe/CdS (3.5 and 2 monolayers of CdSe core and CdS shell respectively) in the...     

Significant Exciton Brightening in Monolayer Tungsten Disulfides via Fluorination: n‐Type Gas Sensing Semiconductors

Monolayer transition‐metal dichalcogenides (TMDCs) have recently emerged as promising candidates for advanced photonic and valleytronic applications due to their unique optoelectronic properties. However, the low luminescence efficiency of monolayer TMDCs has significantly hampered their use in these fields. Here it is reported that the photoluminescence efficiency of monolayer WS₂ can be remarkably enhanced up to fourfold through the fluorination, surpassing the reported performance of molecular and/or electrical doping methods. Its degree is easily controlled by changing the fluorine plasma duration time and can also be reversibly tuned via additional hydrogen plasma treatment, allowing for its versatile tailoring for interfacial band alignment and customized engineering. The striking photoluminescence improvement occurs via a substantial transition of trions to excitons as a result of the strong electron affinity of fluorine dopants, and the fluorination enables unprecedented detection of n‐type NH₃ gas in WS₂ due to changed excitonic dynamics showing excellent sensitivity (at least down to 1.25 ppm). This work provides valuable strategies and insights into exciton physics in monolayer TMDCs, opening up avenues toward highly‐efficient 2D light emitters, photovoltaics, nanosensors, and optical interconnects.     

多量子阱光开关器件的激子吸收及光调制特性

我们分析了 Ga As/Al Ga As半导体多量子阱 (MQW)光开关器件的室温激子吸收行为及光调制特性 ,优化设计了多量子阱结构 ,研制出常通型和常关型两种类型光开关器件 ,并对器件的光调制特性进行了测量与研究。实验得出的结论与理论计算相符合 ,常通型器件对比度约为 10∶ 1;常关型器件对比度约为 4∶ 1。     

Competitive Absorption and Inefficient Exciton Harvesting: Lessons Learned from Bulk Heterojunction Organic Photovoltaics Utilizing the Polymer Acceptor P(NDI2OD‐T2)

Organic solar cells utilizing the small molecule donor 7,7′‐(4,4‐bis(2‐ethylhexyl)‐4H‐silolo[3,2‐b:4,5‐b′]dithiophene‐2,6‐diyl)bis(6‐fluoro‐4‐(5′‐hexyl‐[2,2′‐bithiophen]‐5‐yl)benzo[c][1,2,5] thiadiazole) (p‐DTS(FBTTh₂)₂ and the polymer acceptor poly{[N,N′‐bis(2‐octyldodecyl)‐1,4,5,8‐naphthalenedicarboximide‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)}(P(NDI2OD‐T2)) are investigated and a power conversion efficiency of 2.1% is achieved. By systematic study of bulk heterojunction (BHJ) organic photovoltaic (OPV) quantum efficiency, film morphology, charge transport and extraction and exciton diffusion, the loss processes in this blend is revealed compared to the blend of [6,6]‐phenyl‐C71‐butyric acid methyl ester (PC₇₁BM) and the same donor. An exciton diffussion study using Förster resonant energy transfer (FRET) shows the upper limit of the P(NDI2OD‐T2) exciton diffusion length to be only 1.1 nm. The extremely low exciton diffusion length of P(NDI2OD‐T2), in combination with the overlap in donor and acceptor absorption, is then found to significantly limit device performance. These results suggest that BHJ OPV devices utilizing P(NDI2OD‐T2) as an acceptor material will likely be limited by its low exciton diffusion length compared to devices utilizing functionalized fullerene acceptors, especially when P(NDI2OD‐T2) significantly competes with the donor molecule for photon absorption.     

Magneto－optic Current Sensor Based on Total Reflections in a Quadrangular Bulk Glass

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Magneto—optic Current Sensor Based on Total Reflections in a Quadrangular Bulk Glass

A novel optical device of a bulk glass Faraday current sensor in presented,which has a accuracy of 0.5 in the current region of 1000-8000A and over a tempe-rature range from-30℃ to 40℃.The new sensing device can compensate the phase difference heteween p and s components of the incident light caused by total internal re-flections in a glass.The self-correction,auto-correlation and auto-ampification tech-niques are used in the signal treatment with the help of a computer.     

PDLC膜光透射率温度特性的研究

用相互独立、大小相同的球形液晶微摘均匀分散在聚合物基质中形成的聚合物分散液晶（ＰＤＬＣ）膜的物理模型,计算了ＰＤＬＣ膜光透射率随温度的变化。结果表明在各向同性相时透射率随温度变化较缓慢,在向列相时透射率有一峰值。理论结果与实验值相符。     

Formation of Methanofullerene Cation in Bulk Heterojunction Polymer Solar Cells Studied by Transient Absorption Spectroscopy

Photogenerated charge carriers for blend films of poly[2‐methoxy‐5‐(3,7‐dimethyloctyloxy)‐1,4‐phenylenevinylene] (MDMO‐PPV) and [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PCBM) have been investigated by transient absorption spectroscopy. The blend film with a low PCBM fraction (<10 wt %) exhibits a wide absorption that ranges from 900 to 1000 nm, which is characteristic of the MDMO‐PPV hole polaron and PCBM radical anion. On the other hand, the blend film with a higher PCBM fraction (> 30 wt %) exhibits a major absorption band at ∼900 nm, which is characteristic of the PCBM radical cation. For identification of charge carriers, the absorption spectrum and molar absorption coefficient of each charged species have been evaluated separately using various combinations of electron donor and acceptor materials. Consequently, the MDMO‐PPV hole polaron has been found to have a broad absorption at ∼950 nm and the PCBM radical anion and cation show a distinct absorption at 1020 and 890 nm, respectively. On the basis of these absorption spectra, the transient spectra observed for the blend films have been simulated. The spectrum for a low PCBM fraction is well reproduced by superposition of the absorption spectra of the MDMO‐PPV hole polaron and PCBM radical anion. On the other hand, the spectrum for a high PCBM fraction is well reproduced by superposition of the absorption spectra of the MDMO‐PPV hole polaron, PCBM radical anion, and PCBM radical cation, which indicates that the PCBM radical cation is formed in the blend films with PCBM at a high concentration. Possible mechanisms for the formation of the PCBM radical cation in the blend are also discussed.     

GaN基量子阱激子结合能和激子光跃迁强度

采用变分法,计算了GaN基量子阱中激子结合能和激子光跃选强度。计算结果表明,GaN基量子阱中激子结合能为10－55meV,大于体材料中激子结合能,并随着阱宽减小而增加,在临界阱宽处达到最大。结间带阶同样对激子结合能有着较大的影响,更大带阶对应更大的结合能。同时量子限制效应增加了电子空穴波函数空间重叠,因此加强了激子光跃迁振子强度,导致GaN/AlN量子阱中激子光吸收明显强于体材料中激子光吸收。     

22 nm体硅nFinFET总剂量辐射效应研究

通过^(60)Coγ射线辐照试验,研究了22 nm工艺体硅nFinFET的总剂量辐射效应,获得了总剂量辐射损伤随辐照偏置和器件结构的变化规律及损伤机理。研究结果表明,经过开态(ON)偏置辐照后器件阈值电压正向漂移,而传输态(TG)和关态(OFF)偏置辐照后器件阈值电压负向漂移;鳍数较少的器件阈值电压退化程度较大。通过分析陷阱电荷作用过程,揭示了产生上述试验现象的原因。     

三维半导体GaAs量子阱微腔中的腔极化激元

半导体微腔中腔模和激子模耦合形成腔极化激元,三维微腔中由于横向限定腔模和激子模形成离散化的本征模式.本文计算了远离截止近似下,三维半导体微腔中空腔腔模的能量与微腔半径的关系;及腔模和激子模耦合后,三维半导体柱型微腔中具有相同角量子数和径向量子数的两个低阶腔模、重空穴激子模、轻空穴激子模耦合形成的腔极化激元能量随微腔半径变化的情况.结果表明随着微腔半径的减小腔模能量蓝移,腔模与相应的重空穴激子模、轻空穴激子模耦合形成的腔极化激元的三支随着微腔半径的减小存在明显的反交叉行为.随着微腔半径的变化,极化激元的三支所体现的模     

Quantitative Analysis of Bulk Heterojunction Films Using Linear Absorption Spectroscopy and Solar Cell Performance

A fundamental understanding of the relationship between the bulk morphology and device performance is required for the further development of bulk heterojunction organic solar cells. Here, non‐optimized (chloroform cast) and nearly optimized (solvent‐annealed o‐dichlorobenzene cast) P3HT:PCBM blend films treated over a range of annealing temperatures are studied via optical and photovoltaic device measurements. Parameters related to the P3HT aggregate morphology in the blend are obtained through a recently established analytical model developed by F. C. Spano for the absorption of weakly interacting H‐aggregates. Thermally induced changes are related to the glass transition range of the blend. In the chloroform prepared devices, the improvement in device efficiency upon annealing within the glass transition range can be attributed to the growth of P3HT aggregates, an overall increase in the percentage of chain crystallinity, and a concurrent increase in the hole mobilities. Films treated above the glass transition range show an increase in efficiency and fill factor not only associated with the change in chain crystallinity, but also with a decrease in the energetic disorder. On the other hand, the properties of the P3HT phase in the solvent‐annealed o‐dichlorobenzene cast blends are almost indistinguishable from those of the corresponding pristine P3HT layer and are only weakly affected by thermal annealing. Apparently, slow drying of the blend allows the P3HT chains to crystallize into large domains with low degrees of intra‐ and interchain disorder. This morphology appears to be most favorable for the efficient generation and extraction of charges.