新型脉冲激光能量计用无铅(Na_(1-x)K_x)_(0.5)Bi_(0.5)TiO_3铁电薄膜的制备及其激光感生热电电压信号的研究

采用脉冲激光沉积(PLD)技术,分别在LaA lO3(LAO)、(La,Sr)(A l,Ta)O3(LAST)及SrTiO3(STO)三种不同的单晶衬底上制备了一系列无铅(Na1-xKx)0.5B i0.5TiO3(x=0.00,0.08,0.19,0.30,NKBT)铁电薄膜材料。利用X射线衍射(XRD)仪对薄膜结构进行了分析,结果表明在单晶平衬底上生长的薄膜都是单取向生长的外延膜,其中摇摆曲线的半高宽(FWHM)显示在(La,Sr)(A l,Ta)O3单晶衬底上生长的薄膜结晶质量最好。另外,在20°倾斜的(La,Sr)(A l,Ta)O3单晶衬底上生长的(Na1-xKx)0.5B i0.5TiO3铁电薄膜中还首次观察到了激光感生热电电压(LITV)信号。发现在能量为0.48mJ/pulse的紫外脉冲激光辐照下,其最大激光感生热电电压为31mV,完全满足了制作脉冲激光能量计探测元件的要求,有望开发出可集成的新型脉冲激光能量计。     

新型脉冲激光能量计用无铅(Na1-χKχ)0.5Bi0.5TiO3铁电薄膜的制备及其激光感生热电电压信号的研究

采用脉冲激光沉积(PLD)技术,分别在LaAlO3(LAO)、(La,Sr)(Al,Ta)O3(LAST)及SrTiO3(STO)三种不同的单晶衬底上制备了一系列无铅(Na1-χKχ)0.5Bi0.5TiO3(x=0.00,0.08,0.19,0.30,NKBT)铁电薄膜材料.利用X射线衍射(XRD)仪对薄膜结构进行了...     

电沉积FeS2(Pyrite)薄膜的制备与性能研究

采用含铁和硫元素的水溶液电沉积制备了FeS2 薄膜,并在硫氛围中退火获得样品。研究了样品的微结构和光吸收以及电学性质。结果表明薄膜样品晶相单一,晶粒尺寸约为100nm,光吸收系数随沉积时间增加略有增大,电阻率随薄膜沉积时间的增加而减小。为防止薄膜脱落,在沉积过程中使用了阳离子表面活性剂,得到了均匀且粘附性较强的膜。     

Pb（Zr_（0．52）Ti_（0．48））O_3铁电薄膜的脉冲准分子激光沉积

用ＡｒＦ脉冲准分子激光在ＳＯＩ和Ｐｔ／ＳＯＩ衬底上沉积了Ｐｂ（Ｚｒ，Ｔｉ）Ｏ＿３铁电薄膜，并用快速退火进行热处理。ｘ射线衍射、卢瑟辐背散射等分析表明：所结晶的薄膜是以（１００）和（１１０）为主要取向的多晶膜，且结晶情况与热处理温度和时间密切相关；ＰＺＴ薄膜呈现铁电性，其剩余极化Ｐｒ＝１５μｃ／ｃｍ￣２，矫顽电场Ｅｃ＝５０ｋＶ／ｃｍ；并且具有较高的介电常数和较高的电阻率。     

基片温度对脉冲激光沉积CNx薄膜的组织结构和摩擦学性能的影响

采用脉冲激光烧蚀氮化碳薄膜靶,在室温至450℃基片温度下制备了CNx薄膜.利用扫描电镜、X射线衍射仪、X射线光电子谱仪和拉曼光谱仪等对薄膜的形貌、结晶性和结合键状态进行了表征.采用球-盘式摩擦仪测试了薄膜在大气中(相对湿度60％～62％)的摩擦磨损性能.结果表明:所得CNx薄膜均呈非晶状态,表面形貌与基片温度无关.随着基片温度的升高,薄膜含氮量由原子分数25.3％下降至21.2％,膜中sp3C-C键的含量增加且在300℃时达到最高,N-sp3C键的含量下降且在150℃时最高;拉曼谱中ID/IG比值上升,G峰蓝移且半高宽下降,薄膜结构有序度升高-石墨化程度增加;薄膜的摩擦系数从0.23下降至0.13,磨损率从3.0× 10-15 m3N-1m-1上升至9.3×10-15 m3N-1m-1.     

二氧化钛过渡层对脉冲激光沉积钛酸锶钡薄膜微结构和介电性质的影响

选取极薄Ti02作为过渡层,采用脉冲激光沉积法分别在Si(100)和Pt(111)/Ti/SiO2/Si(100)基底上制备了Bao.6Sro.4TiO3(BST)薄膜,研究过渡层对BST薄膜微结构及电学性质的影响.发现厚度20纳米以内的锐钛矿相结晶TiO2过渡层可使BST薄膜由无规则取向转变为(111)择优取向,而非晶和较厚TiO2过渡层对BST薄膜的取向无影响.结晶的TiO2过渡层也使薄膜的表面颗粒变细.还研究了不同厚度TiO2对BST薄膜电学性质的影响,结果表明BST薄膜在Pt(111)底电极上加入极薄的结晶TiO2过渡层后电学性质有明显改善,薄膜的介电常数和可调谐度提高,而介电损耗降低.加入膜厚约5nm的TiO2过渡层后,测试频率为10 kHz时薄膜相应介电常数、介电损耗及可调谐度分别为513、0.053和36.7%.     

脉冲激光沉积制备外延Ni_(0.8)Zn_(0.2)Fe_2O_4薄膜的应变与磁性能研究

用脉冲激光沉积设备,分别在SrTiO3(001)(STO)和MgO(001)基片上外延生长了单层Ni0.8Zn0.2Fe2O4(NZF)薄膜。经X射线衍射分析,在STO和MgO基片上制备的NZF薄膜均为单一c取向的外延薄膜,由PHI扫描可知薄膜均为四重对称结构。由NZF薄膜的倒易空间图可以计算得到在STO和MgO基片上应变分别为0.0704和-0.0124。分别对不同基片上的NZF薄膜进行磁强计测量可得,在STO基片上沉积的NZF薄膜的面内和面外饱和磁化强度分别为269.6和224.78 emu/cm3,面内和面外的矫顽场分别为2.68×104和4.78×104A/m,在MgO基片上沉积的NZF薄膜的面内和面外饱和磁化强度分别为219.11和180.75 emu/cm3,面内和面外的矫顽场分别为3.46×104和5.32×104A/m。     

不同衬底上Ba0.4Sr0.6TiO3铁电薄膜的制备及外延生长的研究

利用脉冲激光沉积( PLD)技术,通过一系列实验成功地制备出了近外延生长的Ba0.4Sr0.6TiO3铁电薄膜.研究了衬底对Ba0.4Sr0.6TiO3铁电薄膜外延质量的影响.从摇摆曲线的半高宽(FWHM)及原子力显微镜(AFM)图谱中可以看出,在铝酸锶钽镧(LAST)衬底上生长的薄膜,外延质量明显比失配度更小的钛酸锶...     

紫外激光脉冲沉积法制备高温超导（Bi,Pb）2Sr2CaCu2O8薄膜的研究

用紫外脉冲激光沉积技术在单晶衬底上制备高温超导(Bi,Pb)2Sr2CaCu2O8薄膜,系统研究了不同镀膜参数对薄膜结晶质量的影响,获得了优化的镀膜工艺。并在较低温沉积、高温退火,以及高温沉积两种工艺下均获得了具有c轴取向、无杂相及无挥发(分解)的(Bi,Pb)2Sr2CaCu2O8薄膜。相比于高温沉积,低温沉积、高温退火制备的薄膜结晶质量更好。     

脉冲激光沉积法制备的Ge(S90Se10)2硫系薄膜中的光致漂白效应研究

运用激光脉冲沉积法（PLD）制备了Ge（S90Se10）2薄膜，通过运用紫外汞灯对制备的薄膜进行不同时间的辐照，我们确定了达到饱和状态所需要的辐照时间（90分钟）。当薄膜处于饱和状态时，巨大的光致漂白效应被观察到了（△E=0．36ev）。此外，在本文中，我们也对光致漂白效应的机理进行了阐述，一种新型的光电子材料被发现了。     

A parametric study of AlN thin films grown by pulsed laser deposition

High quality AlN thin films were grown at 200–450°C on sapphire substrates by laser ablation of Al targets in nitrogen reactive atmosphere. The nitrogen pressure was varied between 10⁻³ and 10⁻¹ mbar. The reactive gas pressure during irradiation and the temperature of the substrate were found to essentially influence the quality of the layers. X-ray diffraction analysis evidenced the formation of highly orientated layers for a very restrictive set of parameters. Other analysis techniques, like X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, optical transmission spectroscopy have been used to evidence the good stoichiometry and purity of the films. The characteristics of these films were compared with those of AlN thin films deposited in similar experimental conditions, on Si (100) and Si (111) substrates.     

Controlled growth and characteristics of single-phase Cu2O and CuO films by pulsed laser deposition

Copper oxide, Cu₂O and CuO, thin films have been synthesized on Si (100) substrates using pulsed laser deposition method. The influences of substrate temperature and oxygen pressure on the structural properties of copper oxide films were discussed. The X-ray diffraction results show that the structure of the films changes from Cu₂O to CuO phase with the increasing of the oxygen pressure. It is also found that the (200) and (111) preferred Cu₂O films can be modified by changing substrate temperature. The formation of Cu₂O and CuO films are further identified by Fourier transform infrared spectroscopy. For the Cu₂O films, X-ray photoelectron spectroscopic studies indicate the presence of CuO on the surface. In addition, the optical gaps of Cu₂O and CuO films have been determined by measuring the transmittance and reflectance spectra.     

A study of microstructural and optical properties of nanocrystalline ceria thin films prepared by pulsed laser deposition

Thin films of cerium oxide (CeO₂) have been deposited on (100) Si substrates using pulsed laser deposition technique at various substrate temperatures from room temperature (RT) to 973 K at an optimized oxygen partial pressure of 3 Pa. Structural, morphological and optical properties have been carried out using X-ray diffraction (XRD), Raman, ellipsometry and atomic force microscopy techniques. XRD results showed that the deposited films are polycrystalline with cubic structure. At room temperature, the film showed preferred orientation along (111) plane, while at higher temperatures, it exhibited preferred orientation along (200). The crystallite sizes were calculated and were found to be in the range 17-52 nm. The texture coefficient for (200) reflection increased until 573 K, and then decreased in the temperature range 673-973 K. The Raman peak appeared at 463 cm^− 1 due to the F_2g active mode also confirmed the formation of CeO₂ with a cubic structure. There was a systematic variation in the Raman peak intensity, frequency shift and line broadening with the increase of temperature. The ellipsometry studies showed that the refractive index and band gap increased from 2.2 to 2.6 and 3.4 to 3.6 eV, respectively with increasing substrate temperature from RT to 973 K.     

Study of manganese oxide thin films grown by pulsed laser deposition

In this paper, we report on the growth of manganese oxides thin films by Pulsed Laser Deposition using an MnO target at various oxygen pressures and substrate temperatures ranging from 550 to 800 °C. Grazing Incidence X-Ray Diffraction measurements on the grown films revealed that, at low deposition temperature, the dominant phase is Mn₂O₃, but as the deposition temperature was raised above 700 °C, a phase transformation occurred leading to the formation of Mn₃O₄. In a qualitative comparison, in the temperature range of 500-850 °C, and at a pressure below 13 Pa, the phase diagram of bulk manganese oxides and our grown films show a fair correlation. The films grown near the transition temperature (T = 700 °C) were found to be very thin compared to those grown at lower or higher temperatures, but the surface roughness was found to increase with temperature, as determined by Atomic Force Microscopy.     

Structural properties of cobalt ferrite thin films deposited by pulsed laser deposition: Effect of the reactive atmosphere

Cobalt ferrite thin films have been elaborated by pulsed laser ablation of a CoFe₂ metallic target on Si (100) substrates. The films were deposited at low temperature (300 °C) in various pressures of two different reactive atmospheres (O₂/N₂, 20:80 and O₂). We present the influence of the nature of the reactive gas and of the deposition pressure on the crystallisation. It has been shown that a strong (111) preferential orientation is obtained for intermediate pressures of the O₂/N₂ reactive gas. The degree of orientation is higher for the O₂/N₂ mixture than for pure O₂. This behaviour is explained in terms of kinetic energy of the deposited species.     

Effect of growth temperature on the structural and transport properties of magnetite thin films prepared by pulse laser deposition on single crystal Si substrate

Magnetite (Fe₃O₄) thin films are prepared by pulsed laser deposition using an α-Fe₂O₃ target on silicon (111) substrate in the substrate temperature range of 350 °C to 550 °C. X-ray diffraction (XRD) measurement shows that the film deposited at 450 °C is a single phase Fe₃O₄ film oriented along [111] direction. However, the film grown at 350 °C reveals mixed oxide phases (FeO and Fe₃O₄), while the film deposited at 550 °C is a polycrystalline Fe₃O₄. X-ray photoelectron spectroscopy study confirms the XRD findings. Raman measurements reveal identical spectra for all the films deposited at different substrate temperatures. We observe abrupt increase in the resistivity behavior of all the films around Verwey transition temperature (T_V) (125 K-120 K) though the transition is broader in the film deposited at 350 °C. We observe that the optimized temperature for the growth of Fe₃O₄ film on Si is 450 °C. The electrical transport behavior follows Shklovskii and Efros variable range hopping type conduction mechanism below T_V for the film deposited at 450 °C possibly due to the granular growth of the film.     

Growth of polycrystalline InP thin films by the pulsed laser deposition technique

The growth of polycrystalline InP films on glass substrates by the pulsed laser deposition technique is reported. Optimal growth conditions as high vacuum and relatively low substrate temperature were necessary to obtain stoichiometric InP layers. Structural and morphological characterizations of the samples are shown. X-ray diffraction shows that the stoichiometric InP films were face-centered cubic with preferred orientation of the crystallites over the (111) plane and mean grain size of about 60 nm. We also discuss the consequences of adverse growth conditions as bad vacuum and high substrate temperature on the film stoichiometry.     

Microstructure and magnetic properties of zinc ferrite thin films produced by pulsed laser deposition

Zinc ferrite thin films were deposited from a target of zinc ferrite onto a MgO substrate using XeCl excimer laser operating at 308 nm and frequency of 30 Hz. The crystallographic characterizations of the films were performed using X-ray diffraction (XRD). Microstructure, surface morphology, chemical composition and grain size, as well as surface roughness were obtained from scanning electron microscope (SEM), energy dispersive spectroscopy (EDS) and atomic force microscopy (AFM). The magnetic properties of the thin films were studied in the temperature range 5–300 K and in fields of up to 5 T using SQUID magnetometry. Data on temperature and field dependence of magnetization provide a strong evidence for superparamagnetism. Paper presented at 8 AGM of MRSI, BARC, Mumbai, 1997.     

Effect of deposition temperature on chemical composition and electronic properties of amorphous carbon nitride (a-CNx) thin films grown by plasma assisted pulsed laser deposition

The effect of deposition temperature and nitrogen inclusion in amorphous carbon (a-C) films, deposited by plasma enhanced pulsed laser deposition, on chemical composition and electronic transport has been studied. a-CNx films were deposited on Si (100) by pulsed ArF laser ablation of a graphite target, under N₂ atmosphere. A radiofrequency (13.56 MHz RF) apparatus was used to generate plasma of excited nitrogen species, and its effect on nitrogen uptake and CNx film formation has been studied. Chemical and micro-structural changes associated to increased deposition temperature and nitrogen incorporation were examined by x-ray photoelectron spectroscopy; electrical properties were analyzed by the four-point-probe methods. Temperature-dependent conductivity measurements are tentatively interpreted and discussed in reference to chemical composition.