Analysis of diodes with a relatively low barrier in the microwave planar mixer

Diodes with a relatively low barrier are investigated in 1D mixer at frequencies of about 94 GHz at a low power of heterodyne. A planar antenna that contains diodes whose differential resistance ranges from 2 to 9 kΩ at zero bias is used for the frequency conversion. The optimal signal output at an intermediate frequency of 700 MHz is reached using transforming circuits that close the diode with respect to direct current and provide the matching of the signal source with an internal resistance of 1 or 2.2 kΩ and a transmission line with an impedance of 50 Ω. The minimum conversion loss (12.5–16 dB) corresponds to the heterodyne power 10–40 μW.     

Gate-controlled negative differential resistance in drain currentcharacteristics of AlGaAs/InGaAs/GaAs pseudomorphic MODFETs

The observation of negative differential resistance (NDR) and negative transconductance at high drain and gate fields in depletion-mode AlGaAs/InGaAs/GaAs MODFETs with gate lengths L _g ~0.25 μm is discussed. It is shown that under high bias voltage conditions, V_ds>2.5 V and V_gs>0 V, the device drain current characteristic switches from a high current state to a low current state, resulting in reflection gain in the drain circuit of the MODFET. The decrease in the drain current of the device corresponds to a sudden increase in the gate current. It is shown that the device can be operated in two regions: (1) standard MODFET operation for V_gs<0 V resulting in f_max values of >120 GHz, and (2) a NDR region which yields operation as a reflection gain amplifier for V_gs >0 V and V_ds>2.5 V, resulting in 2 dB of reflection gain at 26.5 GHz. The NDR is attributed to the redistribution of charge and voltage in the channel caused by electrons crossing the heterobarrier under high-field conditions. The NDR gain regime, which is controllable by gate and drain voltages, is a new operating mode for MODFETs under high bias conditions     

Temperature dependence of the conversion loss and response time of InSb mixers

The performance of bulk InSb mixers is investigated, A heterodyne experiment has been performed at 69 GHz with IF's varying from 0.4 to 20 MHz. In this experiment the conversion loss was measured as a function of the intermediate frequency (IF) for ambient temperatures in the range 1.5 to 20°K. The IF at which the conversion loss increased by 3 dB determined the response time. Using an electron temperature model, expressions for the conversion loss and the response time are derived by making a small-signal expansion of an energy balance equation. Good agreement between theory and experiment is shown. In this theory the InSb mixer is viewed as a bolometer mixer. An evaluation of mixer performance, stressing operation at ambient temperatures in the 1.5 to 20°K range, is presented. The available tradeoffs between conversion loss and response time as a function of ambient temperature and applied fields are given. Values as low as 11 dB for the minimum conversion loss can be obtained at 1.5°K, where the maximum useable IF is 1 MHz. To obtain a substantially higher IF, such as 10 MHz, the temperature must be increased to 16°K. However, the optimum conversion loss increases at a rate of 1 dB/°K and is 27 dB at 16°K. It is also shown that the device performance of InSb mixers can be predicted satisfactorily from static I-V characteristics and that the best mixer material can be determined by making simple dc measurements.     

Analysis and implementation of a CMOS even harmonic mixer with current reuse for heterodyne/direct conversion receivers

This paper presents a novel topology for the even harmonic mixer (EHM). The proposed mixer employs a current reuse circuit in the RF input stage to improve its linearity, and uses the double frequency technique in the LO input stage to overcome the leakage and dc offset problems for heterodyne and direct conversion receivers, respectively. In addition, the proposed topology also has the advantages of low power consumption and high conversion gain. In order to demonstrate the benefits of the proposed mixer, theoretical analyses of linearity, conversion gain, and noise performance have been described in detail. The measured results reveal that the proposed mixer has a single-end conversion gain of 9.17 dB, third-order input intercept point (IIP/sub 3/) of -5.01 dBm, and IIP/sub 3//dc of -6.31 dB, under the supply voltage of 1.8 V, power consumption of 1.35 mW, and LO power of 5 dBm at 900 MHz.     

A compact 220 GHz heterodyne receiver module with planar Schottky diodes

This letter presents the development of a compact 220 GHz heterodyne receiver module for radars application in which a novel low pass wide stop band intermediate frequency (IF) filter is integrated. The planar Schottky anti-parallel mixing diode based subharmonic mixer (SHM) is used as the receiver’s first stage. The diode is flip-chip mounted on a 50 μm thick quartz substrate. The accurate modeling of the self and mutual inductance of the diode’s air-bridges are discussed. The measured conversion loss (CL) of the SHM has a minimum value of 6.2 dB at 210.5 GHz, and is lower than 8.4 dB in the frequency range 209.4–219.6 GHz with a 10 mW input power from a local oscillator (LO). The LO chain consists of a 110 GHz passive tripler, two Ka-band amplifiers and a Ka-band active tripler. The tested minimum double side band (DSB) noise temperature of the integrated 220 GHz heterodyne receiver is 725 K at 205.2 GHz and lower than 1550 K in the frequency range 199–226 GHz.     

新型恒压控制型负阻HBT的研制进展

研究了HBT产生负阻的可能机制,通过对材料结构和器件结构的特殊设计,采用常规台面HBT工艺,先后研制出3类高电流峰谷比的恒压控制型负阻HBT.超薄基区HBT的负阻特性是由超薄基区串联电阻压降调制效应造成的,在GaAs基InGaP/GaAs和AlGaAs/GaAs体系DHBT中均得到了验证.双基区和电阻栅型负阻HBT均为复合型负阻器件.双基区负阻HBT通过刻断基区,电阻栅负阻HBT通过在集电区制作基极金属形成集电区反型层,构成纵向npn与横向pnp的复合结构,由反馈结构(pnp)的集电极电流来控制主结构(npn)的基极电流从而产生负阻特性.3类负阻HBT与常规HBT在结构和工艺上兼容,兼具HBT的高速高频特性和负阻器件的双稳、自锁、节省器件的优点.     

A low noise SIS receiver covering the frequency range 215–250 GHz

We have developed a heterodyne receiver incorporating an SIS mixer for use on a radiotelescope operating at 1.3 mm wavelength. The mixer has a minimum conversion loss of <2 dB and contributes less than 60 K to a total double side band receiver noise temperature of about 80 K at 220 GHz and 230 GHz. To our knowledge this represents the lowest receiver noise ever reported in this frequency range.     

与HBT工艺兼容的新型负阻器件的研制与分析

在HBT工艺基础上,通过对器件结构的特殊设计,研制出了一类新型三端负阻器件,其恒压控制型负阻的PVCR大于800,并伴有恒流控制型负阻。通过atlas器件模拟软件进行模拟后对其物理机制进行了解释。该器件既能保持HBT高频、高速的特点,又具有负阻、双稳、自锁等特性,同时与普通台面HBT工艺兼容,易于集成,是一种具有研究和应用价值的新型负阻器件。     

Novel SiC/Si heterostructure negative-differential-resistance diodefor use as switch with high on/off current ratio and low powerdissipation

A novel p-SiC/n-Si heterostructure negative-differential-resistance (NDR) diode with special current-voltage (I-V) characteristics is reported. Under reverse biases, the I-V curve of this device possesses an N-shaped NDR with a high peak-to-valley current ratio (PVCR) and a broad high-impedance valley region. For use as a switch, it can easily achieve a very low off-state current and a high on/off current ratio, as compared to the conventional N-shaped NDR devices. Hence, performance with a more effective switching action and lower power dissipation can be expected. Furthermore, obvious NDR's can even be obtained at a temperature up to 300°C, indicating this device is also potential for high-temperature applications     

High-efficiency wavelength conversion using FWM in an SOAintegrated DFB laser

A wavelength converter that uses four-wave mixing (FWM) in an SOA-integrated distributed-feedback (DFB) laser was demonstrated. Lossless conversion up to 300-GHz detuning and a conversion efficiency of -5 dB at 1-THz detuning was achieved. The device exhibited low ASE (noise) level, and noise figure (NF) characteristics of 24 dB for 16-nm wavelength conversion was observed. This high-efficiency FWM wavelength conversion provided by a single device is promising for optical wavelength shifters in large-scale optical communication systems     

High Current Responsivity and Wide Modulation Bandwidth Terahertz Detector Using High-Electron-Mobility Transistor for Wireless Communication

A high-current-responsivity terahertz (THz) detector was fabricated using a broadband bow-tie antenna and an InAlAs/InGaAs high-electron-mobility transistor (HEMT) with a short gate length. High-current responsivity can be achieved by using a short gate length; the resulting high transconductance exhibited ballistic transport in the channel. We fabricated the HEMT detector with a 50-nm-long channel; the transconductance was 1.2 S/mm and the subthreshold slope was 120 mV/dec, yielding a high-current responsivity (～5 A/W) and a cutoff frequency of 460 GHz. We also measured the modulation bandwidth of the THz detector using a heterodyne mixing technique with a uni-traveling carrier photodiode (UTC-PD) for providing the radio frequency (RF) and a frequency multiplier as a local oscillator. The intensity of the intermediate signal (IF) was measured by changing the frequency of the UTC-PD; very high bandwidths of up to 26 GHz were obtained. The experimental results agree well with electromagnetic simulations, which indicate that the bandwidth is determined by the external circuit. The conversion gain from RF to IF was ?2 dB in the heterodyne mixing by using the HEMT detector.     

A unidirectional output optical frequency conversion device with anasymmetric-κ DBR structure

A novel optical frequency conversion device that successfully demonstrates optical frequency conversion and unidirectional transmission of optical signals has been designed and fabricated. The device is composed of a gain region and saturable absorber region with monolithically integrated distributed Bragg reflector (DBR) mirrors with different coupling coefficients. The device structure is optimized to achieve three functions: 1) unidirectional light output, 2) converted-light wavelength tuning, and 3) optically triggered optical frequency conversion. The output power of converted light from the light input-end facet of the device is 30 dB smaller than that from the output-end facet, and the converted light wavelength can be scanned over 4 nm without a bias current to the input-end DBR region, and it is widened to 7.8 nm by injecting current to that region. The device emits converted light only when light input is injected and optical signals are unidirectionally transmitted, and its response frequency is estimated to be 0.8 GHz     

激光外差干涉中声光器件非互易特性研究

针对声光器件存在的非互易现象导致光强衰减影响衍射效率并降低激光外差干涉效率的问题,进行了一种基于声光驱动100MHz时声光器件非互易效应对激光外差干涉影响的研究。以光束衍射实验为主体,结合光阑、TeOa晶体对声光器件非互易值进行测量,利用光功率计获得测量过程中的器件非互易数值,在不同驱动频率下分析衍射效率分布情况;并利...     

Noise and mixing properties of high-Tc Josephson junctions at W-band frequencies

We report on the noise and Josephson mixing properties of high-T_c superconductor (HTS) Josephson junctions. Direct radiation measurements and heterodyne mixing experiments in the frequency range 45–141 GHz have been performed by using YBa₂Cu₃O_7−x (YBCO) step-edge junctions (SEJ) on LaAlO₃ and MgO and bicrystal junctions (BCJ) on MgO substrates. Junctions with current voltage characteristics (CVC) close to predictions of the resistivity shunted junction (RSJ) model were mounted into a high sensitive radiometer system. From linewidth measurements we calculated an effective noise temperature of our junctions. In heterodyne mixing experiments we obtained conversion efficiencies around −14 dB in the 11 GHz intermediate frequency (IF) band under the radiation of two monochromatic signals. In the fundamental mixing regime we observed response at IF at working temperatures up to 72 K. The measured receiver and mixer noise temperature of the Josephson mixer at 94 GHz local oscillator (LO) frequency, an IF of 1.4 GHz and at a working temperature of 10 K was 4700 and 3400 K, respectively.     

负阻异质结晶体管的模拟与实验

采用MBE方法生长了8nm基区的InGaP/GaAs双异质结材料,研制成具有负阻特性的异质结晶体管.在恒压恒流条件下均观察到了负阻特性并对其物理机制进行了讨论.推导出集电极电流Ic与VCE的关系表达式,讨论了负阻与器件结构和参数的关系.使用PSPICE模拟软件建立电路网表模型,代入推导出的IC-VCE公式进行模拟,模拟结果与器件的测量结果十分接近.     

负阻异质结晶体管的模拟与实验

采用MBE方法生长了8nm基区的InGaP/GaAs双异质结材料,研制成具有负阻特性的异质结晶体管.在恒压恒流条件下均观察到了负阻特性并对其物理机制进行了讨论.推导出集电极电流Ic与VCE的关系表达式,讨论了负阻与器件结构和参数的关系.使用PSPICE模拟软件建立电路网表模型,代入推导出的IC-VCE公式进行模拟,模拟结果与器件的测量结果十分接近.     

A novel InP/InAlGaAs negative-differential-resistanceheterojunction bipolar transistor (NDR-HBT) with interestingtopee-shaped current-voltage characteristics

A new and interesting negative-differential-resistance heterojunction bipolar transistor (NDR-HBT) based on the InP/InAlGaAs material system is fabricated successfully and demonstrated. Due to the employment of narrow base and δ-doped sheet at the emitter-base (E-B) heterojunction, the significant and interesting topee-shaped current-voltage (I-V) characteristics are observed in the low current regime. A peak-to-valley current ratio (PVCR) up to 11 in the NDR loci is found. In the higher current regimes, on the other hand, NDR phenomena disappear and the device acts as a normal bipolar transistor. These interesting properties are believed to be attributed mainly to the modulation of potential spike resulting from the specified device structure     

Improved design of tuned optical receivers

We present new design principles for improved heterodyne tuned optical receivers where several tuning inductances reduce the influence of thermal receiver noise over a broad frequency range. A theoretical example for a 600 MHz tuning bandwidth shows a reduction of thermal receiver noise (and thus in required local oscillator power) of up to 13dB. The example is tested experimentally for the so-called mixed tuning configuration. We obtain good agreement with the theoretical predictions. The experimental RMS noise current is <5pA/?(Hz) over a 580 MHz bandwidth with the lowest value of 3-5 pA/?(Hz) at 950MHz.     

Thermal and free carrier concentration mapping during ESD event in smart Power ESD protection devices using an improved laser interferometric technique

Spatial distribution of temperature and free-carrier concentration during high-current stress is studied in smart power electrostatic discharge (ESD) protection devices using a backside laser interferometric technique. The method is based on detecting changes in the refractive index of silicon due to thermo-optical and plasma-optical effects. We use a modified version of a heterodyne interferometer, where the reference beam is reflected from an external mirror outside the sample chip, which allows one to perform measurements without any restriction to the size of the scanning area. We have found two pronounced heat dissipating regions due to a vertical and a lateral current flow path in the device. In addition, two regions with increased current density due to carrier injection related to the two current paths have been found. These temperature and carrier concentration distributions found by the experiment agree very well with the results of 2D device simulation.     

A 850-GHz waveguide receiver employing a niobium SIS junctionfabricated on a 1-μm Si3N4 membrane

We report on a 850-GHz superconducting-insulator-superconducting (SIS) heterodyne receiver employing an RF-tuned niobium tunnel junction with a current density of 14 kA/cm², fabricated on a 1-μm Si₃N₄ supporting membrane. Since the mixer is designed to be operated well above the superconducting gap frequency of niobium (2Δ/h≈690 GHz), special care has been taken to minimize niobium transmission-line losses. Both Fourier transform spectrometer (FTS) measurements of the direct detection performance and calculations of the IF output noise with the mixer operating in heterodyne mode, indicate an absorption loss in the niobium film of about 6.8 dB at 822 GHz. These results are in reasonably good agreement with the loss predicted by the Mattis-Bardeen theory in the extreme anomalous limit. From 800 to 830 GHz, we report uncorrected receiver noise temperatures of 518 or 514 K when we use Callen and Welton's law to calculate the input load temperatures. Over the same frequency range, the mixer has a 4-dB conversion loss and 265 K±10 K noise temperature. At 890 GHz, the sensitivity of the receiver has degraded to 900 K, which is primarily the result of increased niobium film loss in the RF matching network. When the mixer was cooled from 4.2 to 1.9 K, the receiver noise temperature improved about 20% 409-K double sideband (DSB). Approximately half of the receiver noise temperature improvement can be attributed to a lower mixer conversion loss, while the remainder is due to a reduction in the niobium film absorption loss. At 982 GHz, we measured a receiver noise temperature of 1916 K