SnO2的含量对ITO透明导电薄膜结构和光电特性的影响

阐述了射频磁控溅射方法制备的柔性衬底ITO透明导电膜的结构和光电特性与靶材中SnO2含量的关系.ITO靶材中In2O3掺杂SnO2最佳比例(质量比)为7.5%,制备薄膜的霍耳迁移率为89.3 cm2/(V·s),电阻率为6.3×10-4Ω·cm,在可见光范围内相对透过率为85%左右,随着靶材中SnO2含量增大,薄膜的光学带隙展宽.用不同掺杂比例的靶材制备的薄膜均为多晶纤锌矿结构,掺杂比例增大,样品的晶格常数变大,晶格畸变明显.     

轻掺杂氢化非晶硅的制备与光电性能研究

采用等离子体化学气相沉积(PECVD)法,以高纯度硅烷(SiH4)为反应气体,硼烷(B2H6)为掺杂气体,在ITO玻璃衬底上制备出硼轻掺杂浓度的氢化非晶硅(a-Si∶H)半导体薄膜。测量了样品的光暗电导率、折射率、消光系数、禁带宽度随掺杂浓度的变化。结果表明:随着硼掺杂浓度的增加,薄膜的暗电导率先减小后增大。消光系数、禁带宽度等都随着掺杂浓度的增加而变化。在不同工艺条件下,改变硼掺杂浓度,确定了最佳掺杂比(光暗电导率之比最大),制备出适合器件级轻掺杂氢化非晶硅薄膜光敏层。     

以Liq:rubrene为单发光层的白色OLED的制备与研究

以ITO玻璃基片为衬底,8-羟基喹啉锂(Liq)掺杂红荧烯 (Rubrene)作为单一发光层,制备结构为ITO/PTV:TPD/Liq:Rubrene/Alq3/Al的白色有机电致发光器件(OLED),其量度达到3 120 cd/m2.对4种不同掺杂浓度器件进行比较,分析了掺杂剂对器件发光亮度的影响,并对上述器件的发光和电学性能进行了研究和探讨.     

锡掺杂对ITO膜方阻和结构的影响

以铟、锡氯化物为前驱物,采用溶胶-凝胶法在玻璃基体上制备不同锡掺杂的ITO膜,在热处理温度为450℃条件下制备不同锡掺杂(质量分数11%~33%)的ITO膜,研究锡掺杂对ITO膜方阻和结构特性的影响。用四探针法测量ITO膜的方阻并对样品进行X射线衍射分析,结果表明:锡掺杂量在20%时ITO膜的方阻最小,不同锡掺杂的ITO膜均为立方铁锰矿结构,锡掺杂会影响ITO膜晶粒尺寸、晶格常数和晶面取向等结构特性,ITO膜的晶粒较大、晶格畸变小、择优取向小时薄膜方阻较小。     

Tb配合物TbY(o-MOBA)6(phen)2·2H2O的电致发光器件

合成了一类新型稀土配合物TbY(o-MOBA)6(phen)2·2H2O,将其掺杂到导电聚合物聚乙稀咔唑(PVK)中获得了纯正、明亮的绿光发射.用这种掺杂体系分别制作了2类器件:1) ITO/PVK:TbY(o-MOBA)6(phen)2·2H2O/LiF/Al;2) ITO/PVK:TbY(o-MOBA)6(phen)2·2H2O/BCP/AlQ/LiF/Al.器件1的起亮电压为13 V,在21 V时最大亮度为18.2 cd/m2;结构优化的器件2,在23 V 时最大亮度可达124.5 cd/m2.将这种材料的发光性能与另一种稀土配合物Tb(o-MOBA)3phen·H2O相比较,并分别讨论了其光致发光(PL)和电致发光(EL)机理.     

Gd掺杂BiFeO3薄膜的溶胶-凝胶法制备和电性能研究

利用溶胶-凝胶工艺在ITO/玻璃衬底上制备了Bi1-xGdxFeO3(x=0.00、0.05、0.10和0.15)薄膜.研究了Gd掺杂对薄膜的结构、形貌、漏电流性能和介电性能的影响.结果显示,未掺Gd和Gd掺杂为5％的样品为菱方结构,当Gd掺杂量达到10％和15％时,样品变为四方结构.掺10％Gd的薄膜样品表面光滑、平整,晶粒大小均匀.Gd的掺入大大降低了BiFeO3(BFO)薄膜的漏电流,其中掺Gd量为10％和15％的薄膜的漏电流几乎为零.在整个测试频率范围内,掺10％Gd的样品的介电常数较大且能保持恒定,同时其介电损耗最小.     

纳米硅层状薄膜及其p-i-n太阳能电池的研制

通过等离子体增强化学气相沉积(PECVD)法分别制备了本征、掺磷和掺硼的氢化纳米硅薄膜(nc-Si:H),并制备出纳米硅复合层状薄膜.对薄膜样品进行了喇曼(Raman)散射谱,X射线衍射等分析测试.结果表明:掺杂元素对纳米硅薄膜的晶态比和晶粒大小存在不同程度的影响;通过薄膜表面衍射(XRD)可得到硅的(111),(220)和(311)三个晶面衍射峰;并在制得的纳米硅复合层状薄膜的基础上,制备了结构为Al/ITO/n+-nc-Si:H/i-nc-Si:H/p-c-Si/Al/Ag的太阳能电池.该电池的开路电压、短路电流和填充因子与非晶硅太阳电池相比,均得到很大的提高.     

纳米硅层状薄膜及其p-i-n太阳能电池的研制

通过等离子体增强化学气相沉积(PECVD)法分别制备了本征、掺磷和掺硼的氢化纳米硅薄膜(nc-Si:H),并制备出纳米硅复合层状薄膜.对薄膜样品进行了喇曼(Raman)散射谱,X射线衍射等分析测试.结果表明:掺杂元素对纳米硅薄膜的晶态比和晶粒大小存在不同程度的影响;通过薄膜表面衍射(XRD)可得到硅的(111),(220)和(311)三个晶面衍射峰;并在制得的纳米硅复合层状薄膜的基础上,制备了结构为Al/ITO/n -nc-Si:H/i-nc-Si:H/p-c-Si/Al/Ag的太阳能电池.该电池的开路电压、短路电流和填充因子与非晶硅太阳电池相比,均得到很大的提高.     

ITO薄膜光学特性的研究

ITO薄膜是一种透明的导电膜,属于N型简并氧化物半导体,它能透过可见光,但反射红外辐射。ITO被广泛用作半导体器件的透明电极和作为形成异质结势垒的半导体材料。本文作者采用喷涂热解法制备ITO薄膜,发现其光学特性和电学特性受掺杂,环境气氛成膜温度和退火温度的影响。ITO的分子式为In_(2-x)Sn_xO_(3-y),作者利用PHI-550型俄歇能谱仪,用原子相对百分比浓度的方法来确定In_(2-x)Sn_xO_(3-y)中x和y值,改变掺杂量和环境气氛来控制x和y值变化。     

平板显示器中ITO透明电极制备的研究

利用光刻技术和湿法刻蚀技术制备ITO透明电极,借助视频显微仪和台阶仪观测电极形状和表面形貌.比较了不同溶液的刻蚀效果,指出采用盐酸加三氯化铁溶液刻蚀效果最佳,分别讨论了HCl含量和ReCl3含量变化对ITO膜刻蚀速率的影响.最后指出在25士2℃的环境下,刻蚀液HCl、H20和FeCl3·6H2O的配比满足3 L:1 L:(20～30 g)时,ITO膜的刻蚀速率能达到1 nm/s,所制备的透明电极边缘整齐无钻蚀,适合于制备平板显示器中的透明精细电极.     

掺杂聚合物薄膜黄绿发光二极管

在具有电致发光的有机聚合物薄膜ｐｏｌｙ(２－ｍｅｔｈｙｏｘｙ－５－ｅｔｈｙｌｏｘｙ)－４－ｄｉ－(２－ｍｅｔｈｙｏｘｙ－５－ｏｃｔａｏｘｙ)－ｐｈｅｎｙｌｏｎｅ－ｖｉｎｙｌｅｎｅ(简称 ＭＥＭＯ－ＰＰＶ)中掺入一种高荧光量子效率的染料罗丹明６Ｇ(Ｒ６Ｇ),用旋转涂敷的方法获得了发光层,同时将其作为空穴传输层,以８－羟基＠$铝(８－Ａｌｑ３)作为电子传输层,得到了多层有机发光二极管ＩＴＯ/ＰＰＶ:Ｒ６Ｇ/Ａｌｑ３/Ａｌ．该器件峰值波长为５５０ｎｍ,发黄绿光．研究结果表明:不同掺杂浓度对器件发光光谱产生较大影响;通过掺杂,可显著提高器件的稳定性．在１８Ｖ下,器件的亮度达到３６００ｃｄ/ｍ２,外量子效率达３．２%．     

Moiecuiar Doped Poiymer Light Emitting Diodes with Air—stabie Aluminum as Cathode

By using air-stable alumminum as cathode,molecular doped polymer (MDP)blue light emitting diodes(LEDs)were constructed.Poly(N-vinylcarbazole(PVK)doped with,1,1,4,4-tetrapheny 1-1,3-butadiens(TPB)was used as the light-emitting layer,a layer of 2-(4-biphenylyl)-5-(4-terbutypheny)1-3,4-oxadiazole(PBD) as hole-blocking,electron-transporting layer and a layer of tris(8-quinolinolate)-Aluminum(Alq3)film also worked as an electron-transporting layer.The device with structure of ITO/PVK;TPB/PBD/Alq3/Al was fabricated.Blue emis-sion began at about 4V,more than 1000 cd/m^2 was achieved at 14V.This is the lowest turn-on voltage for polymeric lgiht-emitting diodes(PLEDS)used air-stable elec-trodes.Such low-operating voltage,especially using air-stable aluminum as cathode,may be helpful for the devices to be used in commercially viable displays.     

Molecular Doped Polymer Light Emiting Diodes with Air－stable Aluminum as Cathode

ＭｏｌｅｃｕｌａｒＤｏｐｅｄＰｏｌｙｍｅｒＬｉｇｈｔＥｍｉｔｉｎｇＤｉｏｄｅｓｗｉｔｈＡｉｒ－ｓｔａｂｌｅＡｌｕｍｉｎｕｍａｓＣａｔｈｏｄｅ①②ＣＨＥＮＢａｉｊｕｎ，ＨＯＵＪｉｎｇｙｉｎｇ．ＸＵＥＳｈａｎｈｕａ，ＬＩＵＳｈｉｙｏｎｇ（ＳｔａｔｅＫｅｙ...     

掺杂发光体对红色有机电致发光的影响(英文)

为了研究掺杂发光体对红色有机电致发光二极管的增强效果,将DCJTB和C545T分别掺入Alq3,制备了双发光层的OLED器件,器件结构为玻璃/ITO/4 ,4′,4″-tris[2-naphthylphenyl-1-phenylamino]triphenyla-mine (2T-NATA)/N,N′-di (naphthalene-1-yl)-N,N′-diphenyl benzidine ( NPB)/tris-(8-hydroxyquinoline)aluminum ( Alq3):4-(dicyanomethylene)-2-tert-butyl-6 (1 ,7 ,7 ,7-tetramethyljulolidin-4-yl-vinyl)-4 H-pyran(DCJTB)/Alq3:10-(2-benzothiazolyl)-2 ,3 ,6 ,7-tetrahydro-1 ,1 ,7 ,7 ,-tetramethyl-1 H,5 H,11 H-(1)-benzopy-ropyrano-(6 ,7-8-i ,j)quinolizin-11-one (C545T)/Alq3/LiF/Al ,并且将其与单发光层的红、绿光器件相比较。实验结果表明,与单发光层的红光器件相比,加入绿光发光层的红光器件的发光特性被增强了,这种双发光层器件的最优掺杂比例为[Alq3:(2 .5 %)C545T]/[ Alq3:(1 .5 %)DCJTB](质量分数) ,在电压为11 .5 V时得到最大发光亮度为6 830 cd/ m2,在11 V电压时能得到4 .59 cd/A的最大电流效率。但是,这种方法的缺点是削弱了红光的色纯度。     

掺杂聚乙烯咔唑的有机二极管的伏安特性

本文提出了一种掺杂具有空穴导电特性的聚合物来改变有机二极管伏安特性的新方法。在导电玻璃上利用甩胶法分别制得两类有机薄膜层:聚烷基噻吩和掺杂不同量聚乙烯咔唑的聚烷基噻吩。将铝沉积在这些有机薄膜上作为有机二极管的负极。实验发现,掺杂聚合物的有机二极管电流电压非线性特性得到增强,经幂函数曲线拟合,若掺杂量适中,幂指数存在着一个最大值。     

透明导电膜及靶材

透明导电膜在电气及光学领域的应用日益广泛。近年来以掺杂Ｓｎ的Ｉｎ２Ｏ３（简称ＩＴＯ）开发和应用受到重视。用ＩＳＯ靶通过溅射法制备ＩＴＯ透明导电膜。由金属铟制取氧化铟粉末，后与氧化锡混合、压制烧结制出相对密度达９５％的ＩＴＯ靶材。     

硫化镉纳米微晶掺杂Na2O—B2O3—SiO2系统玻璃的制备及光学性质 …

本文采用Ｓｏｌ－ｇｅｌ方法制备了掺杂ＣｄＳ纳米微晶的Ｎａ２Ｏ－Ｂ２Ｏ３－ＳｉＯ２系统玻璃,研究了这种玻璃材料的合成反应机理和结构特性。利用各种温度下玻璃中掺杂纳米尺寸ＣｄＳ半导体微晶的光致发光光谱,研究了其光致发光带的峰值能量和线宽对温度的信赖关系,拟合了其带隙发光带的线宽随温度的变化曲线,获得样品的非均匀线宽。ＣｄＳ微晶的非均匀线宽主要是由于微晶的尺寸分布引起的,可以利用ＣｄＳ微晶的非均匀宽化系     

硫化镉纳米微晶掺杂Na2O-B2O3-SiO2系统玻璃的制备及光学性质的研究

本文采用Sol－gel方法制备了掺杂CdS纳米徽晶的Na2O－B2O3－SiO2系统玻璃,研究了这种玻璃材料的合成反应机理和结构特性．利用各种温度下玻璃中掺杂纳米尺寸CdS半导体微晶的光致发光光谱,研究了其光致发光带的峰值能量和线宽对温度的依赖关系,拟合了其带隙发光带的线宽随温度的变化曲线,获得样品的非均匀线宽．CdS微晶的非均匀线宽主要是由于微晶的尺寸分布引起的,可以利用CdS微晶的非均匀宽化系数来评价微晶的尺寸分布．报道了此种玻璃的三阶非线性极化率X（3）＝6.5×10－12esu．简要分析了影响这种材料三阶非线性极化率的因素．     

Patterning of transparent conducting oxide thin films by wet etching for a-Si:H TFT-LCDs

The patterning characteristics of the indium tin oxide (ITO) thin films having different microstructures were investigated. Several etching solutions (HC1, HBr, and their mixtures with HNO₃) were used in this study. We have found that ITO films containing a larger volume fraction of the amorphous phase show higher etch rates than those containing a larger volume fraction of the crystalline phase. Also, the crystalline ITO films have shown a very good uniformity in patterning, and following the etching no ITO residue (unetched ITO) formation has been observed. In contrast, ITO residues were found after the etching of the films containing both amorphous and crystalline phases. We have also developed a process for the fabrication of the ITO with a tapered edge profile. The taper angle can be controlled by varying the ratio of HNO₃ to the HC1 in the etching solutions. Finally, ITO films have been found to be chemically unstable in a hydrogen containing plasma environment. On the contrary, aluminum doped zinc oxide (AZO) films, having an optical transmittance and electrical resistivity comparable to ITO films, are very stable in the same hydrogen containing plasma environment. In addition, a high etch rate, no etching residue formation, and a uniform etching have been found for the AZO films, which make them suitable for a-Si:H TFT-LCD applications.     

Work‐Function Engineering of Graphene Anode by Bis(trifluoromethanesulfonyl)amide Doping for Efficient Polymer Light‐Emitting Diodes

Graphene has been considered to be a potential alternative transparent and flexible electrode for replacing commercially available indium tin oxide (ITO) anode. However, the relatively high sheet resistance and low work function of graphene compared with ITO limit the application of graphene as an anode for organic or polymer light‐emitting diodes (OLEDs or PLEDs). Here, flexible PLEDs made by using bis(trifluoromethanesulfonyl)amide (TFSA, [CF₃SO₂]₂NH) doped graphene anodes are demonstrated to have low sheet resistance and high work function. The graphene is easily doped with TFSA by means of a simple spin‐coating process. After TFSA doping, the sheet resistance of the TFSA‐doped five‐layer graphene, with optical transmittance of ≈88%, is as low as ≈90 Ω sq^?1. The maximum current efficiency and power efficiency of the PLED fabricated on the TFSA‐doped graphene anode are 9.6 cd A^?1 and 10.5 lm W^?1, respectively; these values are markedly higher than those of the PLED fabricated on pristine graphene anode and comparable to those of an ITO anode.