MBEGaAs1—xSbx的喇曼光谱

在比较宽的组份范围内首次报道了MBE GaAs_(1-x)Sb_x混晶的喇曼光谱。发现声子频移强烈地依赖于Sb的组份x,而光学声子的双模行为仅仅在x>0.15时才发现,用远红外傅里叶光谱已证实这一结果。类GaAs LO模的线形分析表明本文的GaAs_(1-x)Sb_x质量较好。用质量缺陷模型和渗流理论讨论实验结果,用团聚效应解释x>0.15时声子的双模行为并估算了平均团聚尺寸。理论与实验结果符合得很好。     

GaAs/Al_xGa_(1-x)As超晶格中的纵光学声子模

本文报道GaAs/Al_xGa_(1-x)As短周期超晶格结构中的纵光学声子模的室温Raman散射测量结果。除了限制在GaAs层中的GaAs LO限制模外,我们还首次观测到限制在Al_xGa_(1-x)As混晶层中的类AlAs LO限制模。根据线性链模型,我们把测量到的LO限制模的频率按照q=m/(n+1)(a_0/(2π))展开,给出了Al_xGa_(1-x)As混晶的类AlAs LO声子色散曲线。     

Ga_(1-x)Al_xP混晶的长波长光学声子谱

本文报道Ga_(1-x)Al_xP混晶的室温喇曼散射测试结果。所用的样品用液相外延方法生长在〈111〉晶向的GaP衬底上。混晶组分x值在0.16—0.65之间。实验结果表明,Ga_(1-x)Al_xP混晶的长波长光学声子谱呈现双模行为,具有类GaP和类AIP两个光学支。     

GaP1-xNx混晶的喇曼散射谱

在室温下测试了GaP1-xNx(x=0.05%～3.1%)混晶的喇曼散射谱.在一级喇曼散射谱中观测到了GaP的LO(Γ)模和强度较弱的禁戒TO(Γ)模以及N的局域模(495cm-3).在N组分较高的一组样品(x=1.3%～3.1%)中,还观察到了位于GaP的LO(Γ)模和TO(Γ)模之间的由N导致的LO(N)模的喇曼频移(387cm-1),其强度随着N浓度的增加而增强.在二级喇曼散射谱中,除了观测到布里渊区中心的声子散射峰2LO(Γ)外,还观测到了布里渊区边界的声子散射峰2LO(L)、2TO(X)以及LO(L)+TO(X).且边界散射峰的强度比中心散射峰更强.另外在组分x=0.6%和x=0.81%的样品中,还得到了诸如来自不同NNi对或N原子簇团的局域模和由N导致的新的散射峰.     

In_xGa_(1-x)As/InP混晶的长波长光学声子谱

本文报道In_xGa_(1-x)As/InP混晶的室温喇曼散射测试结果。所用的样品用MOCVD方法生长在〈100〉晶向的InP衬底上,混晶组分x值在0.17-0.5之间。实验结果表明,In_xGa_(1-x)AS混晶的年波长光学声子谱呈现双模行为,具有类GaAs和类InAs两个光学支,同时探索了晶体应力对LO声子模线型的影响。     

GaP1-xNx混晶的光致发光谱

通过GaP1-xNx(x=0.05%～3.1%)混晶的低温光致发光(PL)谱,探讨了N在不同组分GaNxP1-x混晶的发光特性中所起的作用.在低组分(x=0.05%～0.81%)下,GaNxP1-x的PL谱由NNi对及其声子伴线的发光组成;在高组分(x≥1.3%)下,NNi对之间相互作用形成的与N有关的杂质带导致了GaNxP1-x混晶的带隙降低.同时,在x=0.12%的GaNxP1-x中,得到了清晰的NN3零声子线及其声子伴线,从而直接证实了NN3具有与孤立N中心完全相似的声子伴线.     

Cd_(1-x)Mn_xS高压吸收光谱

采用流体静压力,在室温和低温下测量了三元混晶半磁半导体Cd_(1-x)Mn_xS的吸收光谱.室温下获得了Cd_(1-x)Mn_xS光吸收边的一阶和二阶压力系数,并且在吸收边尾部发现一个大的吸收带尾,随着组分x增加,压力系数下降,带尾增强,同时在高压下观察了Cd_(1-x)Mn_xS的压力相变过程.在77K下,高组分混晶Cd_0.67Mn_0.33S吸收光谱中出现两个Mn~(2+)吸收峰,测量了它们的压力系数,并用晶体场理论讨论了实验结果.     

砷化氢和磷化氢汽相淀积外延InAs_(1-x)P_x 的制备和性能

已用汽相生长技术制备了单晶InAs_(1-x)P_x层,这种技术以前曾用于制备很高质量的GaAs_(1-x)P_x。InAs_(1-x)P_x合金的电子迁移率,与到目前为止所报导的该系的最高电子迁移率相等。对在77°K时合金的电子迁移率数据已作了广泛的报导。在该温度下,所测得的InAs迁移率值是120,000厘米~2/伏-秒,比以前报导的稍高。整个组分范围都符合废伽定律。n-型和P-型掺杂均在汽相生长时完成,提供了范围宽的电阻率和P-n结。     

无序系统的次级光散射

本文试从无序系统的发光及喇曼散射中的几个问题出发,阐述次级光发射中的无序效应。Wolford研究了三元系GaAs_(1-x)P_x:N中束缚激子的发光,发现随着组份x值的变小,电-声子耦合增强,激子的半径变小。张新夷等人对三元系Ga_xIn_(1-x)P:N的束缚激子发光的研究也得到了同样的结论。在三元化合物中,束缚激子趋于局域,激子中电子和空穴的交换能增大。     

Cd_(1-x)Mn_xTe基本吸收边的研究

报道了用透射法在10～300K温度范围内测量不同组分(x=0.007、0.20、0.30和0.45)Cd_(1-x)Mn_xTe的基本吸收边,结果表明,能隙随温度线性变化,能隙的温度系数为负并显著地随Cd_(1-x)Mn_xTe混晶的组分变化。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first